Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136441) > Сторінка 2252 з 2275
| Фото | Назва | Виробник | Інформація |
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| AUIPS7081RTRL | INFINEON TECHNOLOGIES |
 Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 5A; Ch: 1; N-Channel; SMD; DPAK5; reel Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: DPAK5 On-state resistance: 70mΩ Kind of package: reel Technology: Classic PROFET Operating temperature: -40...150°C Power dissipation: 2.5W Application: automotive industry |
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IRFR120NTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.1A Power dissipation: 39W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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BSC0910NDIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 40A Power dissipation: 2.5W Case: PG-TISON-8 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Kind of channel: enhanced |
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IPD65R250C6XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 16.1A Power dissipation: 208.3W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Kind of channel: enhanced |
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IPS65R950C6AKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; 37W; IPAK SL Mounting: THT Case: IPAK SL Power dissipation: 37W Polarisation: unipolar Technology: CoolMOS™ Drain current: 4.5A Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET On-state resistance: 0.95Ω Gate-source voltage: ±20V |
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IPA60R450E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; 30W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ E6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.2A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPB65R420CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 310W; PG-TO263-3 Technology: CoolMOS™ Case: PG-TO263-3 Mounting: SMD On-state resistance: 0.42Ω Power dissipation: 310W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V Drain current: 8.7A Type of transistor: N-MOSFET |
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IPB65R660CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO263-3 Technology: CoolMOS™ Case: PG-TO263-3 Mounting: SMD On-state resistance: 0.66Ω Power dissipation: 62.5W Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Polarisation: unipolar Drain current: 6A |
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IPI200N25N3GAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 88A; 300W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 250V Drain current: 88A Power dissipation: 300W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: THT Kind of channel: enhanced |
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BSC046N10NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 156W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Kind of channel: enhanced |
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IRL40B209 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 293A; Idm: 1707A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 293A Pulsed drain current: 1707A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.25mΩ Mounting: THT Kind of channel: enhanced |
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IRL40B212 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 179A; 231W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 179A Power dissipation: 231W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: THT Gate charge: 91nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRL40B215 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 116A; 143W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 116A Power dissipation: 143W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRL60B216 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 215A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 215A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: THT Gate charge: 172nC Kind of channel: enhanced Features of semiconductor devices: logic level |
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| TLS805B1LDVXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷13.2V; 0.05A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.3V Output voltage: 1.2...13.2V Output current: 0.05A Case: PG-TSON-10 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Input voltage: 2.75...42V |
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BCR573E6433HTMA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ Type of transistor: PNP Mounting: SMD Case: SOT23 Power dissipation: 0.33W Frequency: 150MHz Polarisation: bipolar Base-emitter resistor: 10kΩ Collector-emitter voltage: 50V Collector current: 0.5A Kind of transistor: BRT Base resistor: 1kΩ |
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IRFB4615PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 35A Power dissipation: 144W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhanced |
на замовлення 62 шт: термін постачання 21-30 дні (днів) |
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IDB30E120ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3 Type of diode: rectifying Features of semiconductor devices: fast switching Mounting: SMD Case: TO263-3 Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode |
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IDB30E60ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 30A; TO263-3 Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO263-3 |
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IRF9321TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -15A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -15A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhanced |
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IRF9328TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhanced |
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IRF9332TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -9.8A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -9.8A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhanced |
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IRF9335TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.4A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF9410TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFML8244TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 5.8A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 5.4nC Kind of channel: enhanced |
на замовлення 130 шт: термін постачання 21-30 дні (днів) |
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BSS316NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23 Mounting: SMD Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 1.4A On-state resistance: 0.28Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Case: SOT23 |
на замовлення 12710 шт: термін постачання 21-30 дні (днів) |
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BSD214SNH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.5A Power dissipation: 0.5W Case: SOT363 Gate-source voltage: ±12V On-state resistance: 0.25Ω Mounting: SMD Kind of channel: enhanced |
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BSD316SNH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT363 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.4A Power dissipation: 0.5W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of channel: enhanced |
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BSS205NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.5A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 85mΩ Mounting: SMD Kind of channel: enhanced |
на замовлення 6197 шт: термін постачання 21-30 дні (днів) |
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BSS306NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.3A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 93mΩ Mounting: SMD Kind of channel: enhanced |
на замовлення 7555 шт: термін постачання 21-30 дні (днів) |
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BSS806NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23 Mounting: SMD Case: SOT23 Power dissipation: 0.5W On-state resistance: 82mΩ Type of transistor: N-MOSFET Polarisation: unipolar Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: 20V Drain current: 2.3A |
на замовлення 7206 шт: термін постачання 21-30 дні (днів) |
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BSL214NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.5A; 0.5W; TSOP6 Mounting: SMD Case: TSOP6 Polarisation: unipolar Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: 20V Drain current: 1.5A On-state resistance: 0.25Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.5W |
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BCR185WH6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Mounting: SMD Frequency: 200MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
на замовлення 2330 шт: термін постачання 21-30 дні (днів) |
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IPB024N08N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3 Mounting: SMD Power dissipation: 375W Polarisation: unipolar Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-3 Drain-source voltage: 80V Drain current: 120A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET |
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IDW10G65C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 65W; PG-TO247-3 Technology: CoolSiC™ 5G; SiC Power dissipation: 65W Case: PG-TO247-3 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 650V Max. forward voltage: 1.8V Load current: 10A Leakage current: 2µA Type of diode: Schottky rectifying Max. forward impulse current: 46A |
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XC878CM16FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART; 3÷5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 26.7MHz Interface: CAN x2; SPI; UART Supply voltage: 3...5V DC Case: PG-LQFP-64 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 10 Memory: 64kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 2 Number of input capture channels: 2 |
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IRF135B203 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 135V Drain current: 91A Pulsed drain current: 512A Power dissipation: 441W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhanced |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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| IRF135S203 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 135V Drain current: 91A Pulsed drain current: 512A Power dissipation: 441W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: SMD Gate charge: 0.27µC Kind of channel: enhanced |
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SPP80P06PHXKSA1 | INFINEON TECHNOLOGIES |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3 Mounting: THT Type of transistor: P-MOSFET Power dissipation: 340W Polarisation: unipolar Kind of package: tube Technology: SIPMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO220-3 Drain-source voltage: -60V Drain current: -80A On-state resistance: 23mΩ |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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BSP77E6433 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2.17A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 70mΩ Technology: HITFET® Output voltage: 42V |
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IRS2186PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -4...4A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 192ns Turn-off time: 188ns |
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IRS2186STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -4...4A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 192ns Turn-off time: 188ns |
на замовлення 2390 шт: термін постачання 21-30 дні (днів) |
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TLS850D0TAV50ATMA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD Input voltage: 3...40V Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...150°C Case: PG-TO263-7 Tolerance: ±2% Output voltage: 5V Output current: 0.5A Voltage drop: 70mV Type of integrated circuit: voltage regulator |
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TLS850F0TAV33ATMA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; PG-TO263-7 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 80mV Output voltage: 3.3V Output current: 0.5A Case: PG-TO263-7 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Input voltage: 3...40V |
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| TLS850F2TAV50ATMA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.425V Output voltage: 5V Output current: 0.5A Case: PG-TO263-7 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Input voltage: 3...40V |
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| IPZ65R095C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO247-4 Case: PG-TO247-4 Mounting: THT Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolMOS™ C7 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V Drain current: 24A On-state resistance: 95mΩ Type of transistor: N-MOSFET Power dissipation: 128W Polarisation: unipolar |
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IPP093N06N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 71W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 9.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| DD340N18S | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; double series; 1.8kV; If: 330A; BG-PB50SB-1; screw Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 330A Case: BG-PB50SB-1 Max. forward voltage: 1.31V Max. forward impulse current: 10kA Electrical mounting: screw Mechanical mounting: screw |
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BSC340N08NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 23A Power dissipation: 32W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Kind of channel: enhanced |
на замовлення 598 шт: термін постачання 21-30 дні (днів) |
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AIGW50N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 116nC Kind of package: tube Manufacturer series: H5 Turn-on time: 33ns Turn-off time: 184ns |
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IRFR3410TRPBF | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 31A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7946TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 198A Power dissipation: 96W Case: DirectFET Mounting: SMD Kind of channel: enhanced |
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IRFR825TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 119W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 500V Drain current: 6A Power dissipation: 119W Case: DPAK Mounting: SMD Kind of channel: enhanced |
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IRF7580MTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 116A; 115W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 116A Power dissipation: 115W Case: DirectFET Mounting: SMD Kind of channel: enhanced |
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IRFH7084TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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| BGS12SN6E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz Type of integrated circuit: RF switch Case: TSNP6 Mounting: SMD Number of channels: 2 Application: telecommunication Supply voltage: 1.8...3.5V DC Output configuration: SPDT Bandwidth: 0.1...6GHz |
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TLE4207GXUMA2 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: IMC; motor controller Case: PG-DSO-14 Output current: 0.8A Number of channels: 2 Integrated circuit features: fault detection Mounting: SMD Operating temperature: -40...150°C Operating voltage: 8...18V Kind of package: reel; tape |
на замовлення 2466 шт: термін постачання 21-30 дні (днів) |
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TLE42502GHTSA1 | INFINEON TECHNOLOGIES |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷36V; 0.05A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.3V Output voltage: 2.5...36V Output current: 50mA Case: PG-SCT595 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Input voltage: 4...40V |
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TLE42642GHTSA2 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SOT223-4 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.22V Output voltage: 5V Output current: 0.15A Case: PG-SOT223-4 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Input voltage: 5.5...45V |
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| TLE4264GHTSA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4 Operating temperature: -40...150°C Output voltage: 5V Output current: 0.16A Voltage drop: 0.25V Type of integrated circuit: voltage regulator Input voltage: 5.5...45V Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: PG-SOT223-4 Tolerance: ±2% |
товар відсутній |
| AUIPS7081RTRL |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5A; Ch: 1; N-Channel; SMD; DPAK5; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
On-state resistance: 70mΩ
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 2.5W
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5A; Ch: 1; N-Channel; SMD; DPAK5; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
On-state resistance: 70mΩ
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 2.5W
Application: automotive industry
товар відсутній
| IRFR120NTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| BSC0910NDIATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPD65R250C6XTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.1A
Power dissipation: 208.3W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.1A
Power dissipation: 208.3W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPS65R950C6AKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; 37W; IPAK SL
Mounting: THT
Case: IPAK SL
Power dissipation: 37W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 4.5A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
On-state resistance: 0.95Ω
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; 37W; IPAK SL
Mounting: THT
Case: IPAK SL
Power dissipation: 37W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 4.5A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
On-state resistance: 0.95Ω
Gate-source voltage: ±20V
товар відсутній
| IPA60R450E6XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPB65R420CFDATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 310W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.42Ω
Power dissipation: 310W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 8.7A
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 310W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.42Ω
Power dissipation: 310W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 8.7A
Type of transistor: N-MOSFET
товар відсутній
| IPB65R660CFDATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.66Ω
Power dissipation: 62.5W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.66Ω
Power dissipation: 62.5W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 6A
товар відсутній
| IPI200N25N3GAKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 88A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 88A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
| BSC046N10NS3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRL40B209 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 293A; Idm: 1707A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 293A
Pulsed drain current: 1707A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.25mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 293A; Idm: 1707A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 293A
Pulsed drain current: 1707A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.25mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IRL40B212 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 179A; 231W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 179A
Power dissipation: 231W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 179A; 231W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 179A
Power dissipation: 231W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IRL40B215 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 116A; 143W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 116A
Power dissipation: 143W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 116A; 143W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 116A
Power dissipation: 143W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IRL60B216 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 172nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 172nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| TLS805B1LDVXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷13.2V; 0.05A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.2...13.2V
Output current: 0.05A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 2.75...42V
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷13.2V; 0.05A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.2...13.2V
Output current: 0.05A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 2.75...42V
товар відсутній
| BCR573E6433HTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Type of transistor: PNP
Mounting: SMD
Case: SOT23
Power dissipation: 0.33W
Frequency: 150MHz
Polarisation: bipolar
Base-emitter resistor: 10kΩ
Collector-emitter voltage: 50V
Collector current: 0.5A
Kind of transistor: BRT
Base resistor: 1kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Type of transistor: PNP
Mounting: SMD
Case: SOT23
Power dissipation: 0.33W
Frequency: 150MHz
Polarisation: bipolar
Base-emitter resistor: 10kΩ
Collector-emitter voltage: 50V
Collector current: 0.5A
Kind of transistor: BRT
Base resistor: 1kΩ
товар відсутній
| IRFB4615PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 62 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.09 грн |
| 10+ | 87.11 грн |
| 15+ | 60.25 грн |
| 39+ | 56.62 грн |
| IDB30E120ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: SMD
Case: TO263-3
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: SMD
Case: TO263-3
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
товар відсутній
| IDB30E60ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; TO263-3
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263-3
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; TO263-3
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263-3
товар відсутній
| IRF9321TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRF9328TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRF9332TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.8A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.8A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRF9335TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.4A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.4A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF9410TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFML8244TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhanced
на замовлення 130 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 9.38 грн |
| 45+ | 8.2 грн |
| 100+ | 7.62 грн |
| BSS316NH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 1.4A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 1.4A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Case: SOT23
на замовлення 12710 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 18.76 грн |
| 29+ | 12.92 грн |
| 50+ | 8.23 грн |
| 100+ | 6.64 грн |
| 226+ | 3.78 грн |
| 620+ | 3.58 грн |
| 1500+ | 3.48 грн |
| 2500+ | 3.44 грн |
| BSD214SNH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSD316SNH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT363
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT363
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSS205NH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 6197 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 28.93 грн |
| 19+ | 19.75 грн |
| 27+ | 13.65 грн |
| 50+ | 11.66 грн |
| 100+ | 10 грн |
| 214+ | 3.99 грн |
| 588+ | 3.77 грн |
| BSS306NH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 7555 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.44 грн |
| 60+ | 6.53 грн |
| 100+ | 5.81 грн |
| 175+ | 4.94 грн |
| 470+ | 4.65 грн |
| BSS806NH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.5W
On-state resistance: 82mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 2.3A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.5W
On-state resistance: 82mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 2.3A
на замовлення 7206 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 29.71 грн |
| 19+ | 19.31 грн |
| 32+ | 11.4 грн |
| 100+ | 8.28 грн |
| 152+ | 5.59 грн |
| 419+ | 5.3 грн |
| BSL214NH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.5A; 0.5W; TSOP6
Mounting: SMD
Case: TSOP6
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.5W
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.5A; 0.5W; TSOP6
Mounting: SMD
Case: TSOP6
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.5W
товар відсутній
| BCR185WH6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 2330 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 81+ | 4.85 грн |
| 100+ | 4.04 грн |
| 250+ | 3.57 грн |
| 272+ | 3.13 грн |
| 745+ | 2.95 грн |
| IPB024N08N5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Mounting: SMD
Power dissipation: 375W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Mounting: SMD
Power dissipation: 375W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
товар відсутній
| IDW10G65C5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 65W; PG-TO247-3
Technology: CoolSiC™ 5G; SiC
Power dissipation: 65W
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 10A
Leakage current: 2µA
Type of diode: Schottky rectifying
Max. forward impulse current: 46A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 65W; PG-TO247-3
Technology: CoolSiC™ 5G; SiC
Power dissipation: 65W
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 10A
Leakage current: 2µA
Type of diode: Schottky rectifying
Max. forward impulse current: 46A
товар відсутній
| XC878CM16FFI5VACFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.7MHz
Interface: CAN x2; SPI; UART
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 10
Memory: 64kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 2
Number of input capture channels: 2
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.7MHz
Interface: CAN x2; SPI; UART
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 10
Memory: 64kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 2
Number of input capture channels: 2
товар відсутній
| IRF135B203 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 135V
Drain current: 91A
Pulsed drain current: 512A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 135V
Drain current: 91A
Pulsed drain current: 512A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 130.67 грн |
| 9+ | 99.46 грн |
| 24+ | 94.37 грн |
| IRF135S203 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 135V
Drain current: 91A
Pulsed drain current: 512A
Power dissipation: 441W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 0.27µC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 135V
Drain current: 91A
Pulsed drain current: 512A
Power dissipation: 441W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 0.27µC
Kind of channel: enhanced
товар відсутній
| SPP80P06PHXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Mounting: THT
Type of transistor: P-MOSFET
Power dissipation: 340W
Polarisation: unipolar
Kind of package: tube
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO220-3
Drain-source voltage: -60V
Drain current: -80A
On-state resistance: 23mΩ
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Mounting: THT
Type of transistor: P-MOSFET
Power dissipation: 340W
Polarisation: unipolar
Kind of package: tube
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO220-3
Drain-source voltage: -60V
Drain current: -80A
On-state resistance: 23mΩ
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 305.68 грн |
| 3+ | 254.81 грн |
| 5+ | 196.01 грн |
| 12+ | 185.12 грн |
| BSP77E6433 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
товар відсутній
| IRS2186PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
товар відсутній
| IRS2186STRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
на замовлення 2390 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 104.76 грн |
| 5+ | 87.84 грн |
| 13+ | 68.24 грн |
| 35+ | 64.61 грн |
| TLS850D0TAV50ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD
Input voltage: 3...40V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...150°C
Case: PG-TO263-7
Tolerance: ±2%
Output voltage: 5V
Output current: 0.5A
Voltage drop: 70mV
Type of integrated circuit: voltage regulator
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD
Input voltage: 3...40V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...150°C
Case: PG-TO263-7
Tolerance: ±2%
Output voltage: 5V
Output current: 0.5A
Voltage drop: 70mV
Type of integrated circuit: voltage regulator
товар відсутній
| TLS850F0TAV33ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; PG-TO263-7
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 80mV
Output voltage: 3.3V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; PG-TO263-7
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 80mV
Output voltage: 3.3V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
товар відсутній
| TLS850F2TAV50ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 5V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 5V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
товар відсутній
| IPZ65R095C7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
Power dissipation: 128W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
Power dissipation: 128W
Polarisation: unipolar
товар відсутній
| IPP093N06N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| DD340N18S |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 330A; BG-PB50SB-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 330A
Case: BG-PB50SB-1
Max. forward voltage: 1.31V
Max. forward impulse current: 10kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 330A; BG-PB50SB-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 330A
Case: BG-PB50SB-1
Max. forward voltage: 1.31V
Max. forward impulse current: 10kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| BSC340N08NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 598 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 39.87 грн |
| 17+ | 22.5 грн |
| 46+ | 18.66 грн |
| 124+ | 17.64 грн |
| 250+ | 17.35 грн |
| 500+ | 16.99 грн |
| AIGW50N65H5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 33ns
Turn-off time: 184ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 33ns
Turn-off time: 184ns
товар відсутній
| IRFR3410TRPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF7946TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Power dissipation: 96W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Power dissipation: 96W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRFR825TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 119W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 119W
Case: DPAK
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 119W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 119W
Case: DPAK
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRF7580MTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 116A; 115W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 116A
Power dissipation: 115W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 116A; 115W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 116A
Power dissipation: 115W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRFH7084TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| BGS12SN6E6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Case: TSNP6
Mounting: SMD
Number of channels: 2
Application: telecommunication
Supply voltage: 1.8...3.5V DC
Output configuration: SPDT
Bandwidth: 0.1...6GHz
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Case: TSNP6
Mounting: SMD
Number of channels: 2
Application: telecommunication
Supply voltage: 1.8...3.5V DC
Output configuration: SPDT
Bandwidth: 0.1...6GHz
товар відсутній
| TLE4207GXUMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Case: PG-DSO-14
Output current: 0.8A
Number of channels: 2
Integrated circuit features: fault detection
Mounting: SMD
Operating temperature: -40...150°C
Operating voltage: 8...18V
Kind of package: reel; tape
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Case: PG-DSO-14
Output current: 0.8A
Number of channels: 2
Integrated circuit features: fault detection
Mounting: SMD
Operating temperature: -40...150°C
Operating voltage: 8...18V
Kind of package: reel; tape
на замовлення 2466 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 146.98 грн |
| 5+ | 121.96 грн |
| 8+ | 107.44 грн |
| 22+ | 101.63 грн |
| TLE42502GHTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷36V; 0.05A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.5...36V
Output current: 50mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 4...40V
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷36V; 0.05A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.5...36V
Output current: 50mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 4...40V
товар відсутній
| TLE42642GHTSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 5V
Output current: 0.15A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Input voltage: 5.5...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 5V
Output current: 0.15A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Input voltage: 5.5...45V
товар відсутній
| TLE4264GHTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4
Operating temperature: -40...150°C
Output voltage: 5V
Output current: 0.16A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 5.5...45V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-SOT223-4
Tolerance: ±2%
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4
Operating temperature: -40...150°C
Output voltage: 5V
Output current: 0.16A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 5.5...45V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-SOT223-4
Tolerance: ±2%
товар відсутній