Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136441) > Сторінка 2253 з 2275
| Фото | Назва | Виробник | Інформація |
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TLE4266GHTMA1 | INFINEON TECHNOLOGIES |
 Category: LDO unregulated voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SOT223-4 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.15A Case: PG-SOT223-4 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Input voltage: 5.5...45V |
на замовлення 4185 шт: термін постачання 21-30 дні (днів) |
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TLE4268GXUMA2 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD Kind of package: reel; tape Case: PG-DSO-20 Output voltage: 5V Output current: 0.15A Voltage drop: 0.25V Type of integrated circuit: voltage regulator Input voltage: 5.5...45V Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...150°C |
на замовлення 419 шт: термін постачання 21-30 дні (днів) |
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TLE4269GXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.1A Case: PG-DSO-8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Input voltage: 5.5...45V |
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TLE4291EXUMA2 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-SSOP-14-EP Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.45A Case: PG-SSOP-14-EP Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Input voltage: 3.3...42V |
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TLE42962GV33HTSA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 30mA; PG-SCT595 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 3.3V Output current: 30mA Case: PG-SCT595 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±4% Input voltage: 4...45V |
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TLE42962GV50HTSA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 30mA; PG-SCT595; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 30mA Case: PG-SCT595 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±4% Input voltage: 5.5...45V |
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TLE4296GV50HTSA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 30mA; PG-SCT595; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 30mA Case: PG-SCT595 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±4% Input voltage: 5.5...45V |
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TLE42994EXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SMD Kind of package: reel; tape Input voltage: 4.4...45V Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...150°C Case: PG-SSOP-14-EP Output voltage: 3.3V Output current: 0.15A Type of integrated circuit: voltage regulator |
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TLE7257SJXUMA1 | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8 Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 5.5...18V DC Interface: LIN Mounting: SMD Case: PG-DSO-8 Number of receivers: 1 Operating temperature: -40...150°C DC supply current: 3mA Kind of package: reel; tape Number of transmitters: 1 |
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TLE7258DXUMA1 | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8 Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 5.5...18V DC Interface: LIN Mounting: SMD Case: PG-TSON-8 Number of receivers: 1 Operating temperature: -40...150°C DC supply current: 3mA Kind of package: reel; tape Number of transmitters: 1 |
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| TLE7268LCXUMA1 | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14 Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 5.5...40V DC Interface: LIN Mounting: SMD Case: PG-TSON-14 Number of receivers: 2 Operating temperature: -40...150°C Kind of package: reel; tape Number of transmitters: 2 |
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TLE7268SKXUMA1 | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14 Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 5.5...40V DC Interface: LIN Mounting: SMD Case: PG-DSO-14 Number of receivers: 2 Operating temperature: -40...150°C Kind of package: reel; tape Number of transmitters: 2 |
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AIKP20N60CTAKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 156W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 389 шт: термін постачання 21-30 дні (днів) |
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FP06R12W1T4B3BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A Case: AG-EASY1B-1 Max. off-state voltage: 1.2kV Collector current: 6A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 1B Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Pulsed collector current: 12A Power dissipation: 94W |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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IRLR7807ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 40W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 43A Power dissipation: 40W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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| BSM25GD120DN2E3224BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Collector current: 25A Power dissipation: 200W Case: ECONOPACK 2K Gate-emitter voltage: ±20V Pulsed collector current: 50A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Application: Inverter Electrical mounting: Press-in PCB Topology: IGBT three-phase bridge Mechanical mounting: screw Type of module: IGBT |
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AIKB20N60CTATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 156W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode |
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| IKQ120N60TXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 120A Power dissipation: 833W Case: PG-TO247-3-46 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 703nC Kind of package: tube Turn-on time: 76ns Turn-off time: 343ns Features of semiconductor devices: integrated anti-parallel diode |
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IKQ120N60TAXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 120A Power dissipation: 833W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 772nC Kind of package: tube Turn-on time: 76ns Turn-off time: 343ns Features of semiconductor devices: integrated anti-parallel diode |
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AIKQ120N60CTXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 120A Power dissipation: 833W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 772nC Kind of package: tube Turn-on time: 76ns Turn-off time: 343ns Features of semiconductor devices: integrated anti-parallel diode |
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IRFR3910TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPP037N08N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 214W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 32 шт: термін постачання 21-30 дні (днів) |
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DD261N20K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; double series; 2kV; If: 261A; BG-PB50-1; Ufmax: 1.42V Max. off-state voltage: 2kV Max. forward voltage: 1.42V Load current: 261A Semiconductor structure: double series Max. forward impulse current: 9.5kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: BG-PB50-1 |
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TT122N22KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw Type of module: thyristor Max. off-state voltage: 2.2kV Max. forward voltage: 1.95V Load current: 122A Semiconductor structure: double series Gate current: 200mA Max. forward impulse current: 3.3kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Case: BG-PB34-1 |
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IRFR3504ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 77A Power dissipation: 90W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPP80R360P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.6A Power dissipation: 84W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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IRF3805PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 220A Power dissipation: 130W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced |
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IPP50R190CEXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 127W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 18.5A Power dissipation: 127W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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IRFR15N20DTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK Mounting: SMD Case: DPAK Polarisation: unipolar Drain-source voltage: 200V Drain current: 17A Type of transistor: N-MOSFET Power dissipation: 140W Kind of package: reel Technology: HEXFET® Kind of channel: enhanced |
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BSC360N15NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 74W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 74W Polarisation: unipolar Drain current: 33A Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 36mΩ Drain-source voltage: 150V |
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BSZ520N15NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TSDSON-8 Case: PG-TSDSON-8 Mounting: SMD Drain-source voltage: 150V Drain current: 21A On-state resistance: 52mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V |
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BSZ900N15NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 13A; 38W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 13A Power dissipation: 38W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Kind of channel: enhanced |
на замовлення 4060 шт: термін постачання 21-30 дні (днів) |
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IPA075N15N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 39W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 43A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 48 шт: термін постачання 21-30 дні (днів) |
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| IPB048N15N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 118A; Idm: 480A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 150V Drain current: 118A Pulsed drain current: 480A Power dissipation: 300W Case: PG-TO 263-3 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Kind of channel: enhanced |
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IPB048N15N5LF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 115A; 313W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 150V Drain current: 115A Power dissipation: 313W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Kind of channel: enhanced |
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IPB073N15N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Power dissipation: 214W Polarisation: unipolar Gate charge: 49nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 150V Drain current: 81A On-state resistance: 7.3mΩ Type of transistor: N-MOSFET |
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IPB083N15N5LF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 66A; 179W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Power dissipation: 179W Polarisation: unipolar Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 150V Drain current: 66A On-state resistance: 8.3mΩ Type of transistor: N-MOSFET |
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IPB108N15N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO263-3 Technology: OptiMOS™ 3 Case: PG-TO263-3 Mounting: SMD On-state resistance: 10.8mΩ Power dissipation: 214W Drain-source voltage: 150V Drain current: 83A Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V |
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IPB530N15N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Technology: OptiMOS™ 3 Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 53mΩ Power dissipation: 68W Polarisation: unipolar Drain current: 21A Kind of channel: enhanced |
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IPI075N15N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 100A Power dissipation: 300W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: THT Kind of channel: enhanced |
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IPI111N15N3GAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 83A Power dissipation: 214W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 11.1mΩ Mounting: THT Kind of channel: enhanced |
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IPI530N15N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO262-3 Case: PG-TO262-3 Mounting: THT Technology: OptiMOS™ 3 Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 53mΩ Power dissipation: 68W Polarisation: unipolar Drain current: 21A Kind of channel: enhanced |
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| IPP051N15N5AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 115A; Idm: 480A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 150V Drain current: 115A Pulsed drain current: 480A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: THT Kind of channel: enhanced |
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IPP076N15N5AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 79A; 214W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 150V Drain current: 79A Power dissipation: 214W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhanced |
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IPP111N15N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO220-3 Mounting: THT Drain-source voltage: 150V Drain current: 83A On-state resistance: 11.1mΩ Type of transistor: N-MOSFET Power dissipation: 214W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO220-3 |
на замовлення 228 шт: термін постачання 21-30 дні (днів) |
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IPP530N15N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO220-3 On-state resistance: 53mΩ Type of transistor: N-MOSFET Power dissipation: 68W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: PG-TO220-3 Drain-source voltage: 150V Drain current: 21A |
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IPT059N15N3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 110A; Idm: 620A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 110A Pulsed drain current: 620A Power dissipation: 375W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: SMD Gate charge: 69nC Kind of package: tape Kind of channel: enhanced |
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BCR10PNH6327 | INFINEON TECHNOLOGIES |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 130MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
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XMC1202T016X0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-16 Memory: 16kB SRAM; 32kB FLASH Number of inputs/outputs: 14 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: GPIO; USIC x2 Integrated circuit features: ACMP x2; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 6 Kind of architecture: Cortex M0 Family: XMC1200 |
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XMC1202T028X0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,32kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-28 Memory: 16kB SRAM; 32kB FLASH Number of inputs/outputs: 26 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: GPIO Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 10 Kind of architecture: Cortex M0 Family: XMC1200 |
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XMC1202T028X0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,64kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-28 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 26 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: GPIO Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 10 Kind of architecture: Cortex M0 Family: XMC1200 |
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AIHD10N60RATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Turn-on time: 24ns Turn-off time: 331ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
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IPB60R099CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO263-3-2 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Power dissipation: 255W Case: PG-TO263-3-2 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Kind of channel: enhanced |
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| FS50R12KE3BPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 50A; 270W Case: AG-ECONO2B Application: Inverter Power dissipation: 270W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoPACK™ 2 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A |
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IPP023N08N5AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 375W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IRFB4228PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 83A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 12mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 91 шт: термін постачання 21-30 дні (днів) |
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IRFB4610PBF | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 73A Power dissipation: 190W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced |
на замовлення 131 шт: термін постачання 21-30 дні (днів) |
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IRFB4620PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB Mounting: THT Case: TO220AB Kind of package: tube Drain-source voltage: 200V Drain current: 25A On-state resistance: 72.5mΩ Type of transistor: N-MOSFET Power dissipation: 144W Polarisation: unipolar Gate charge: 25nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V |
на замовлення 471 шт: термін постачання 21-30 дні (днів) |
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IRFB5620PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB Mounting: THT Case: TO220AB Kind of package: tube Gate charge: 25nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 200V Drain current: 25A On-state resistance: 72.5mΩ Type of transistor: N-MOSFET Power dissipation: 144W Polarisation: unipolar |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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BCM846SH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 250MHz |
товар відсутній |
| TLE4266GHTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.15A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.15A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...45V
на замовлення 4185 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 124.31 грн |
| 5+ | 102.36 грн |
| 10+ | 85.66 грн |
| 27+ | 81.31 грн |
| 500+ | 78.4 грн |
| 4000+ | 77.68 грн |
| TLE4268GXUMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Kind of package: reel; tape
Case: PG-DSO-20
Output voltage: 5V
Output current: 0.15A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 5.5...45V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...150°C
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Kind of package: reel; tape
Case: PG-DSO-20
Output voltage: 5V
Output current: 0.15A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 5.5...45V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...150°C
на замовлення 419 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 116.49 грн |
| 5+ | 98 грн |
| 10+ | 86.39 грн |
| 28+ | 82.03 грн |
| 250+ | 78.4 грн |
| TLE4269GXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...45V
товар відсутній
| TLE4291EXUMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-SSOP-14-EP
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.45A
Case: PG-SSOP-14-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 3.3...42V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-SSOP-14-EP
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.45A
Case: PG-SSOP-14-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 3.3...42V
товар відсутній
| TLE42962GV33HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 30mA; PG-SCT595
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 3.3V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 4...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 30mA; PG-SCT595
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 3.3V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 4...45V
товар відсутній
| TLE42962GV50HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 30mA; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 5.5...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 30mA; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 5.5...45V
товар відсутній
| TLE4296GV50HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 30mA; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 5.5...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 30mA; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 5.5...45V
товар відсутній
| TLE42994EXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SMD
Kind of package: reel; tape
Input voltage: 4.4...45V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...150°C
Case: PG-SSOP-14-EP
Output voltage: 3.3V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SMD
Kind of package: reel; tape
Input voltage: 4.4...45V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...150°C
Case: PG-SSOP-14-EP
Output voltage: 3.3V
Output current: 0.15A
Type of integrated circuit: voltage regulator
товар відсутній
| TLE7257SJXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
DC supply current: 3mA
Kind of package: reel; tape
Number of transmitters: 1
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
DC supply current: 3mA
Kind of package: reel; tape
Number of transmitters: 1
товар відсутній
| TLE7258DXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Interface: LIN
Mounting: SMD
Case: PG-TSON-8
Number of receivers: 1
Operating temperature: -40...150°C
DC supply current: 3mA
Kind of package: reel; tape
Number of transmitters: 1
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Interface: LIN
Mounting: SMD
Case: PG-TSON-8
Number of receivers: 1
Operating temperature: -40...150°C
DC supply current: 3mA
Kind of package: reel; tape
Number of transmitters: 1
товар відсутній
| TLE7268LCXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...40V DC
Interface: LIN
Mounting: SMD
Case: PG-TSON-14
Number of receivers: 2
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...40V DC
Interface: LIN
Mounting: SMD
Case: PG-TSON-14
Number of receivers: 2
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
товар відсутній
| TLE7268SKXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...40V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-14
Number of receivers: 2
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...40V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-14
Number of receivers: 2
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
товар відсутній
| AIKP20N60CTAKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 156W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 156W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 389 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 289.26 грн |
| 3+ | 237.39 грн |
| 5+ | 206.17 грн |
| 12+ | 194.55 грн |
| 250+ | 187.3 грн |
| FP06R12W1T4B3BOMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Case: AG-EASY1B-1
Max. off-state voltage: 1.2kV
Collector current: 6A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Power dissipation: 94W
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Case: AG-EASY1B-1
Max. off-state voltage: 1.2kV
Collector current: 6A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Power dissipation: 94W
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2439.2 грн |
| IRLR7807ZTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 40W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 40W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| BSM25GD120DN2E3224BOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 25A
Power dissipation: 200W
Case: ECONOPACK 2K
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Application: Inverter
Electrical mounting: Press-in PCB
Topology: IGBT three-phase bridge
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 25A
Power dissipation: 200W
Case: ECONOPACK 2K
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Application: Inverter
Electrical mounting: Press-in PCB
Topology: IGBT three-phase bridge
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| AIKB20N60CTATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 156W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 156W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IKQ120N60TXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: PG-TO247-3-46
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 703nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: PG-TO247-3-46
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 703nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IKQ120N60TAXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| AIKQ120N60CTXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IRFR3910TRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPP037N08N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 32 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 152.45 грн |
| 8+ | 116.88 грн |
| 20+ | 110.34 грн |
| DD261N20K |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 261A; BG-PB50-1; Ufmax: 1.42V
Max. off-state voltage: 2kV
Max. forward voltage: 1.42V
Load current: 261A
Semiconductor structure: double series
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB50-1
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 261A; BG-PB50-1; Ufmax: 1.42V
Max. off-state voltage: 2kV
Max. forward voltage: 1.42V
Load current: 261A
Semiconductor structure: double series
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB50-1
товар відсутній
| TT122N22KOFHPSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw
Type of module: thyristor
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.95V
Load current: 122A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 3.3kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: BG-PB34-1
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw
Type of module: thyristor
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.95V
Load current: 122A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 3.3kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: BG-PB34-1
товар відсутній
| IRFR3504ZTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPP80R360P7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 200.14 грн |
| 3+ | 164.79 грн |
| 6+ | 153.9 грн |
| 10+ | 148.82 грн |
| 16+ | 145.92 грн |
| IRF3805PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPP50R190CEXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 127W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.5A
Power dissipation: 127W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 127W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.5A
Power dissipation: 127W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.9 грн |
| IRFR15N20DTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK
Mounting: SMD
Case: DPAK
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Type of transistor: N-MOSFET
Power dissipation: 140W
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK
Mounting: SMD
Case: DPAK
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Type of transistor: N-MOSFET
Power dissipation: 140W
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
товар відсутній
| BSC360N15NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 74W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Drain current: 33A
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Drain-source voltage: 150V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 74W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Drain current: 33A
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Drain-source voltage: 150V
товар відсутній
| BSZ520N15NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 150V
Drain current: 21A
On-state resistance: 52mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 150V
Drain current: 21A
On-state resistance: 52mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| BSZ900N15NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 13A; 38W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 13A
Power dissipation: 38W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 13A; 38W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 13A
Power dissipation: 38W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 4060 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 62.93 грн |
| 8+ | 48.06 грн |
| 24+ | 34.85 грн |
| 65+ | 33.39 грн |
| IPA075N15N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 48 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 451.09 грн |
| 3+ | 361.52 грн |
| 4+ | 265.7 грн |
| 9+ | 250.45 грн |
| IPB048N15N5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 118A; Idm: 480A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 118A
Pulsed drain current: 480A
Power dissipation: 300W
Case: PG-TO 263-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 118A; Idm: 480A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 118A
Pulsed drain current: 480A
Power dissipation: 300W
Case: PG-TO 263-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPB048N15N5LF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 115A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 115A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPB073N15N5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Power dissipation: 214W
Polarisation: unipolar
Gate charge: 49nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 81A
On-state resistance: 7.3mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Power dissipation: 214W
Polarisation: unipolar
Gate charge: 49nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 81A
On-state resistance: 7.3mΩ
Type of transistor: N-MOSFET
товар відсутній
| IPB083N15N5LF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 66A; 179W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Power dissipation: 179W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 66A
On-state resistance: 8.3mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 66A; 179W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Power dissipation: 179W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 66A
On-state resistance: 8.3mΩ
Type of transistor: N-MOSFET
товар відсутній
| IPB108N15N3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO263-3
Technology: OptiMOS™ 3
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 10.8mΩ
Power dissipation: 214W
Drain-source voltage: 150V
Drain current: 83A
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO263-3
Technology: OptiMOS™ 3
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 10.8mΩ
Power dissipation: 214W
Drain-source voltage: 150V
Drain current: 83A
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| IPB530N15N3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ 3
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Power dissipation: 68W
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ 3
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Power dissipation: 68W
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
товар відсутній
| IPI075N15N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IPI111N15N3GAKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IPI530N15N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO262-3
Case: PG-TO262-3
Mounting: THT
Technology: OptiMOS™ 3
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Power dissipation: 68W
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO262-3
Case: PG-TO262-3
Mounting: THT
Technology: OptiMOS™ 3
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Power dissipation: 68W
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
товар відсутній
| IPP051N15N5AKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; Idm: 480A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 115A
Pulsed drain current: 480A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; Idm: 480A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 115A
Pulsed drain current: 480A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IPP076N15N5AKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 79A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 79A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 79A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 79A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPP111N15N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO220-3
Mounting: THT
Drain-source voltage: 150V
Drain current: 83A
On-state resistance: 11.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO220-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO220-3
Mounting: THT
Drain-source voltage: 150V
Drain current: 83A
On-state resistance: 11.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO220-3
на замовлення 228 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 281.45 грн |
| 3+ | 235.21 грн |
| 4+ | 226.5 грн |
| 10+ | 219.24 грн |
| 11+ | 214.16 грн |
| 50+ | 206.17 грн |
| IPP530N15N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO220-3
On-state resistance: 53mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 150V
Drain current: 21A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO220-3
On-state resistance: 53mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 150V
Drain current: 21A
товар відсутній
| IPT059N15N3ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; Idm: 620A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Pulsed drain current: 620A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; Idm: 620A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Pulsed drain current: 620A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: tape
Kind of channel: enhanced
товар відсутній
| BCR10PNH6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 130MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 130MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
товар відсутній
| XMC1202T016X0032ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x2; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1200
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x2; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1200
товар відсутній
| XMC1202T028X0032ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-28
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 26
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 10
Kind of architecture: Cortex M0
Family: XMC1200
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-28
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 26
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 10
Kind of architecture: Cortex M0
Family: XMC1200
товар відсутній
| XMC1202T028X0064ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-28
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 26
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 10
Kind of architecture: Cortex M0
Family: XMC1200
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-28
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 26
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 10
Kind of architecture: Cortex M0
Family: XMC1200
товар відсутній
| AIHD10N60RATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Turn-on time: 24ns
Turn-off time: 331ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Turn-on time: 24ns
Turn-off time: 331ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
товар відсутній
| IPB60R099CPATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO263-3-2
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO263-3-2
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| FS50R12KE3BPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 50A; 270W
Case: AG-ECONO2B
Application: Inverter
Power dissipation: 270W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 50A; 270W
Case: AG-ECONO2B
Application: Inverter
Power dissipation: 270W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
товар відсутній
| IPP023N08N5AKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFB4228PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 91 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 261.9 грн |
| 6+ | 159.71 грн |
| 15+ | 151 грн |
| IRFB4610PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 131 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 151.67 грн |
| 10+ | 117.6 грн |
| 13+ | 64.61 грн |
| 36+ | 60.98 грн |
| IRFB4620PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Drain-source voltage: 200V
Drain current: 25A
On-state resistance: 72.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 144W
Polarisation: unipolar
Gate charge: 25nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Drain-source voltage: 200V
Drain current: 25A
On-state resistance: 72.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 144W
Polarisation: unipolar
Gate charge: 25nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
на замовлення 471 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 157.53 грн |
| 7+ | 122.69 грн |
| 20+ | 116.15 грн |
| 50+ | 112.52 грн |
| IRFB5620PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Gate charge: 25nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 25A
On-state resistance: 72.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 144W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Gate charge: 25nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 25A
On-state resistance: 72.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 144W
Polarisation: unipolar
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 180.59 грн |
| 9+ | 103.81 грн |
| 23+ | 98 грн |
| BCM846SH6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
товар відсутній