IPB60R099C6ATMA1 Infineon Technologies
на замовлення 950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 221.4 грн |
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Технічний опис IPB60R099C6ATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 37.9A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.21mA, Supplier Device Package: PG-TO263-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V.
Інші пропозиції IPB60R099C6ATMA1 за ціною від 219.95 грн до 429.57 грн
| Фото | Назва | Виробник | Інформація |
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IPB60R099C6ATMA1 | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 600V 37.9A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.21mA Supplier Device Package: PG-TO263-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IPB60R099C6ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 600V 37.9A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.21mA Supplier Device Package: PG-TO263-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V |
на замовлення 2833 шт: термін постачання 21-31 дні (днів) |
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IPB60R099C6ATMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK T/R |
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IPB60R099C6ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 37.9A Power dissipation: 278W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPB60R099C6ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 37.9A Power dissipation: 278W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |