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BCM856SH6327 BCM856SH6327 INFINEON TECHNOLOGIES BCM856SH6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
на замовлення 2125 шт:
термін постачання 21-30 дні (днів)
30+13.92 грн
45+ 9 грн
100+ 7.26 грн
130+ 6.53 грн
355+ 6.17 грн
Мінімальне замовлення: 30
IRFB7534PBF IRFB7534PBF INFINEON TECHNOLOGIES irfs7534pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 186nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
на замовлення 88 шт:
термін постачання 21-30 дні (днів)
4+112.58 грн
10+ 76.95 грн
12+ 73.32 грн
32+ 68.97 грн
Мінімальне замовлення: 4
BFP460H6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343
Collector-emitter voltage: 4.5V
Current gain: 90...160
Collector current: 70mA
Type of transistor: NPN
Power dissipation: 0.23W
Polarisation: bipolar
Kind of package: reel; tape
Technology: SIEGET™
Kind of transistor: RF
Mounting: SMD
Case: SOT343
Frequency: 22GHz
товар відсутній
FP100R12KT4B11BOSA1 INFINEON TECHNOLOGIES Infineon-FP100R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a3043156fd57301161a6b3faf1e18 Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 515W
Collector current: 100A
Pulsed collector current: 200A
Power dissipation: 515W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO3-3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
товар відсутній
IRFP4332PBF IRFP4332PBF INFINEON TECHNOLOGIES irfp4332pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 57A
Power dissipation: 360W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
2+338.52 грн
5+ 191.65 грн
13+ 181.49 грн
Мінімальне замовлення: 2
BCR196WH6327 BCR196WH6327 INFINEON TECHNOLOGIES BCR196.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 70mA; 0.25W; SOT323; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 70mA
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 150MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
на замовлення 210 шт:
термін постачання 21-30 дні (днів)
210+1.45 грн
Мінімальне замовлення: 210
BCR402WH6327XTSA1 INFINEON TECHNOLOGIES bcr402w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT343
Mounting: SMD
Output current: 20...60mA
Topology: single transistor
Operating voltage: 1.2...18V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming
Kind of integrated circuit: current regulator; LED driver
товар відсутній
BFP183WH6327XTSA1 BFP183WH6327XTSA1 INFINEON TECHNOLOGIES bfp183w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142672e8cd0613 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 65mA; 0.45W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.45W
Case: SOT343
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
на замовлення 2765 шт:
термін постачання 21-30 дні (днів)
40+9.07 грн
100+ 8.06 грн
120+ 7.19 грн
325+ 6.82 грн
Мінімальне замовлення: 40
BFP193WH6327 BFP193WH6327 INFINEON TECHNOLOGIES BFP193WH6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
товар відсутній
BFP196WH6327 BFP196WH6327 INFINEON TECHNOLOGIES BFP196WH6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.15A; 0.7W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 5GHz
на замовлення 2154 шт:
термін постачання 21-30 дні (днів)
16+25.8 грн
20+ 19.09 грн
22+ 17.21 грн
28+ 13.36 грн
100+ 11.03 грн
152+ 5.59 грн
416+ 5.3 грн
Мінімальне замовлення: 16
BFR181WH6327XTSA1 BFR181WH6327XTSA1 INFINEON TECHNOLOGIES BFR181WH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
на замовлення 3545 шт:
термін постачання 21-30 дні (днів)
18+22.67 грн
23+ 16.26 грн
34+ 10.82 грн
50+ 8.93 грн
100+ 7.55 грн
156+ 5.52 грн
428+ 5.23 грн
500+ 5.08 грн
3000+ 5.01 грн
Мінімальне замовлення: 18
IRF6216TRPBF IRF6216TRPBF INFINEON TECHNOLOGIES irf6216pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -2.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
KP236-PS2GO-KIT KP236-PS2GO-KIT INFINEON TECHNOLOGIES Category: Development kits - others
Description: Dev.kit: ARM Infineon; pin strips,USB micro; prototype board
Application: for pressure sensors
Kind of architecture: Cortex M0
Type of development kit: ARM Infineon
Family: XMC1100
Components: XMC1100; XMC4200
Number of add-on connectors: 1
Kind of connector: pin strips; USB micro
Kit contents: prototype board
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+2470.47 грн
IPD600N25N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD600N25N3G_-DS-v02_03-en.pdf?fileId=db3a3043243b5f17012496b03c67195b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 18A; Idm: 100A; 136W
Power dissipation: 136W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Drain-source voltage: 250V
Drain current: 18A
On-state resistance: 60mΩ
товар відсутній
TD320N16SOFHPSA1 INFINEON TECHNOLOGIES TD320N16SOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; BG-PB50SB-1; Ufmax: 1.47V
Case: BG-PB50SB-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Max. off-state voltage: 1.6kV
Max. load current: 320A
Max. forward voltage: 1.47V
Load current: 320A
Semiconductor structure: double series
Gate current: 150mA
Max. forward impulse current: 9.5kA
товар відсутній
TD320N18SOF INFINEON TECHNOLOGIES TT320N18SOF_TD320N18SOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; BG-PB50SB-1; Ufmax: 1.47V
Case: BG-PB50SB-1
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 320A
Max. forward voltage: 1.47V
Load current: 320A
Max. forward impulse current: 9.5kA
Type of module: diode-thyristor
товар відсутній
SPD04N80C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
SPP04N80C3 SPP04N80C3 INFINEON TECHNOLOGIES SPP04N80C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
BSM50GD120DN2 BSM50GD120DN2 INFINEON TECHNOLOGIES BSM50GD120DN2.pdf description Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: ECONOPACK 2K
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 350W
Mechanical mounting: screw
товар відсутній
IPW60R125C6FKSA1 IPW60R125C6FKSA1 INFINEON TECHNOLOGIES IPW60R125C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IFF600B12ME4PB11BPSA1 INFINEON TECHNOLOGIES IFF600B12ME4PB11.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: AG-ECONOD-6
Application: for UPS; Inverter; motors; photovoltaics
Technology: EconoDUAL™ 3
Collector current: 600A
Gate-emitter voltage: ±20V
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Pulsed collector current: 1.2kA
товар відсутній
IRFB7530PBF IRFB7530PBF INFINEON TECHNOLOGIES irfs7530pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 274nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
на замовлення 68 шт:
термін постачання 21-30 дні (днів)
3+156.81 грн
8+ 119.78 грн
20+ 113.25 грн
Мінімальне замовлення: 3
IRFP7530PBF IRFP7530PBF INFINEON TECHNOLOGIES irfp7530pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Mounting: THT
Drain-source voltage: 60V
Drain current: 281A
On-state resistance: 2mΩ
Type of transistor: N-MOSFET
Power dissipation: 341W
Polarisation: unipolar
Kind of package: tube
Gate charge: 274nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Trade name: StrongIRFET
Case: TO247AC
на замовлення 353 шт:
термін постачання 21-30 дні (днів)
2+227.5 грн
5+ 172.05 грн
14+ 162.61 грн
25+ 158.98 грн
50+ 156.08 грн
Мінімальне замовлення: 2
STT2200N16P55XPSA1 INFINEON TECHNOLOGIES STT2200N16P55.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 2.2kA; BG-PS55-1; Ufmax: 1.38V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.6kV
Load current: 2.2kA
Case: BG-PS55-1
Max. forward voltage: 1.38V
Max. forward impulse current: 17.5kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
IPA60R330P6XKSA1 IPA60R330P6XKSA1 INFINEON TECHNOLOGIES IPA60R330P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Power dissipation: 32W
Polarisation: unipolar
Technology: CoolMOS™ P6
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
товар відсутній
IPP60R330P6XKSA1 IPP60R330P6XKSA1 INFINEON TECHNOLOGIES IPP60R330P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 93W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 93W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPW60R330P6FKSA1 IPW60R330P6FKSA1 INFINEON TECHNOLOGIES IPW60R330P6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 93W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPD60R600C6ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R600C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eef7f5937259b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 19A; 63W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 19A
Power dissipation: 63W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPD60R600P7ATMA1 IPD60R600P7ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R600P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be5a5523cc4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
On-state resistance: 0.6Ω
Drain current: 4A
Drain-source voltage: 600V
Power dissipation: 30W
Polarisation: unipolar
Case: PG-TO252-3
Features of semiconductor devices: ESD protected gate
Gate charge: 9nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 16A
товар відсутній
IPD60R600P7SAUMA1 IPD60R600P7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d50d9fe4c403c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
On-state resistance: 0.6Ω
Drain current: 4A
Drain-source voltage: 600V
Power dissipation: 30W
Polarisation: unipolar
Case: PG-TO252-3
Features of semiconductor devices: ESD protected gate
Gate charge: 9nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 16A
на замовлення 2396 шт:
термін постачання 21-30 дні (днів)
10+39.87 грн
13+ 30.2 грн
25+ 26.5 грн
37+ 22.58 грн
102+ 21.34 грн
Мінімальне замовлення: 10
IPD60R600PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed61c45f839e9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 4A; Idm: 14A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 14A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.219Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
BC846SH6327XTSA1 BC846SH6327XTSA1 INFINEON TECHNOLOGIES BC846UE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
товар відсутній
BC847SH6327XTSA1 BC847SH6327XTSA1 INFINEON TECHNOLOGIES BC847SH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
на замовлення 1788 шт:
термін постачання 21-30 дні (днів)
23+17.2 грн
29+ 12.63 грн
34+ 10.96 грн
50+ 7.65 грн
100+ 6.69 грн
192+ 4.4 грн
527+ 4.16 грн
Мінімальне замовлення: 23
IAUC120N04S6L008ATMA1 IAUC120N04S6L008ATMA1 INFINEON TECHNOLOGIES IAUC120N04S6L008.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
XMC4700E196F1536AAXQMA1 XMC4700E196F1536AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-LFBGA-196
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Memory: 276kB SRAM; 1.5MB FLASH
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
товар відсутній
XMC4700E196K2048AAXQMA1 XMC4700E196K2048AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 352kBSRAM,2048kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LFBGA-196
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Memory: 352kB SRAM; 2MB FLASH
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
товар відсутній
XMC4700F144F1536AAXQMA1 XMC4700F144F1536AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 276kBSRAM,1536kBFLASH
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Number of inputs/outputs: 119
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Memory: 276kB SRAM; 1.5MB FLASH
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
товар відсутній
XMC4700F144F2048AAXQMA1 XMC4700F144F2048AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 352kBSRAM,2048kBFLASH
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Number of inputs/outputs: 119
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Memory: 352kB SRAM; 2MB FLASH
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
товар відсутній
XMC4700F144K2048AAXQMA1 XMC4700F144K2048AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 352kBSRAM,2048kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Number of inputs/outputs: 119
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Memory: 352kB SRAM; 2MB FLASH
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
товар відсутній
IPB017N06N3GATMA1 IPB017N06N3GATMA1 INFINEON TECHNOLOGIES IPB017N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPB017N08N5ATMA1 IPB017N08N5ATMA1 INFINEON TECHNOLOGIES IPB017N08N5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
AUIRFN7107TR AUIRFN7107TR INFINEON TECHNOLOGIES auirfn7107.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 300W; PQFN5X6
Mounting: SMD
Drain-source voltage: 75V
Drain current: 53A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: reel
Gate charge: 51nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PQFN5X6
товар відсутній
STT3300N16P76XPSA1 INFINEON TECHNOLOGIES Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 3.3kA; BG-PS55-1; screw; screw
Mechanical mounting: screw
Electrical mounting: screw
Type of module: thyristor
Case: BG-PS55-1
Max. off-state voltage: 1.6kV
Load current: 3.3kA
Semiconductor structure: opposing
товар відсутній
TLE9201SGAUMA1 TLE9201SGAUMA1 INFINEON TECHNOLOGIES TLE9201SG.pdf Category: Motor and PWM drivers
Description: IC: driver; H-bridge; IMC,motor controller; SPI; PG-DSO-12-17; 6A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: IMC; motor controller
Interface: SPI
Case: PG-DSO-12-17
Output current: 6A
Number of channels: 2
Integrated circuit features: current monitoring; fault detection; internal temperature sensor
Mounting: SMD
On-state resistance: 0.1Ω
Operating temperature: -40...150°C
Operating voltage: 5...28V
Frequency: 0...20kHz
Kind of package: reel; tape
товар відсутній
IPP50R399CPXKSA1 IPP50R399CPXKSA1 INFINEON TECHNOLOGIES IPP50R399CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
6+63.88 грн
Мінімальне замовлення: 6
BSC098N10NS5ATMA1 BSC098N10NS5ATMA1 INFINEON TECHNOLOGIES BSC098N10NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IAUZ18N10S5L420ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ18N10S5L420-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a629e850dd5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 72A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Pulsed drain current: 72A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IPU95R2K0P7AKMA1 IPU95R2K0P7AKMA1 INFINEON TECHNOLOGIES IPU95R2K0P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 2.4A; 37W; IPAK
Type of transistor: N-MOSFET
Case: IPAK
Mounting: THT
Power dissipation: 37W
Technology: CoolMOS™ P7
Features of semiconductor devices: ESD protected gate
Kind of package: tube
Gate charge: 10nC
Polarisation: unipolar
Drain current: 2.4A
Kind of channel: enhanced
Drain-source voltage: 950V
On-state resistance: 2Ω
Gate-source voltage: ±20V
на замовлення 1271 шт:
термін постачання 21-30 дні (днів)
8+53.16 грн
10+ 36.3 грн
24+ 34.12 грн
25+ 33.39 грн
66+ 31.94 грн
Мінімальне замовлення: 8
IPU95R750P7AKMA1 IPU95R750P7AKMA1 INFINEON TECHNOLOGIES IPU95R750P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK
Mounting: THT
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Technology: CoolMOS™ P7
Case: IPAK
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
IPW60R165CPFKSA1 IPW60R165CPFKSA1 INFINEON TECHNOLOGIES IPW60R165CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
BCR135SH6327 BCR135SH6327 INFINEON TECHNOLOGIES bcr135.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
товар відсутній
IPP410N30NAKSA1 IPP410N30NAKSA1 INFINEON TECHNOLOGIES IPP410N30N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 44A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IRFHS8342TRPBF IRFHS8342TRPBF INFINEON TECHNOLOGIES irfhs8342pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 9.9A; 2.1W; PQFN2X2
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 9.9A
Power dissipation: 2.1W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IPZ60R017C7XKSA1 IPZ60R017C7XKSA1 INFINEON TECHNOLOGIES IPZ60R017C7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 69A; 446W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 240nC
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 600V
Drain current: 69A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
товар відсутній
IPZ60R040C7XKSA1 IPZ60R040C7XKSA1 INFINEON TECHNOLOGIES IPZ60R040C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Mounting: THT
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO247-4
Drain-source voltage: 600V
Drain current: 50A
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
1+997.57 грн
3+ 876.22 грн
10+ 868.96 грн
IPZ65R019C7XKSA1 INFINEON TECHNOLOGIES IPZ65R019C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; 446W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 75A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
товар відсутній
IPZ65R045C7XKSA1 INFINEON TECHNOLOGIES IPZ65R045C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 46A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
товар відсутній
IPZ65R065C7XKSA1 INFINEON TECHNOLOGIES IPZ65R065C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 171W
Polarisation: unipolar
товар відсутній
IPZA60R037P7XKSA1 IPZA60R037P7XKSA1 INFINEON TECHNOLOGIES IPZA60R037P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 121nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 48A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 255W
Polarisation: unipolar
товар відсутній
IPZA60R060P7XKSA1 IPZA60R060P7XKSA1 INFINEON TECHNOLOGIES IPZA60R060P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
BCM856SH6327 BCM856SH6327.pdf
BCM856SH6327
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
на замовлення 2125 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
30+13.92 грн
45+ 9 грн
100+ 7.26 грн
130+ 6.53 грн
355+ 6.17 грн
Мінімальне замовлення: 30
IRFB7534PBF irfs7534pbf.pdf
IRFB7534PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 186nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
на замовлення 88 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+112.58 грн
10+ 76.95 грн
12+ 73.32 грн
32+ 68.97 грн
Мінімальне замовлення: 4
BFP460H6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343
Collector-emitter voltage: 4.5V
Current gain: 90...160
Collector current: 70mA
Type of transistor: NPN
Power dissipation: 0.23W
Polarisation: bipolar
Kind of package: reel; tape
Technology: SIEGET™
Kind of transistor: RF
Mounting: SMD
Case: SOT343
Frequency: 22GHz
товар відсутній
FP100R12KT4B11BOSA1 Infineon-FP100R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a3043156fd57301161a6b3faf1e18
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 515W
Collector current: 100A
Pulsed collector current: 200A
Power dissipation: 515W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO3-3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
товар відсутній
IRFP4332PBF description irfp4332pbf.pdf
IRFP4332PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 57A
Power dissipation: 360W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+338.52 грн
5+ 191.65 грн
13+ 181.49 грн
Мінімальне замовлення: 2
BCR196WH6327 BCR196.pdf
BCR196WH6327
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 70mA; 0.25W; SOT323; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 70mA
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 150MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
на замовлення 210 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
210+1.45 грн
Мінімальне замовлення: 210
BCR402WH6327XTSA1 bcr402w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT343
Mounting: SMD
Output current: 20...60mA
Topology: single transistor
Operating voltage: 1.2...18V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming
Kind of integrated circuit: current regulator; LED driver
товар відсутній
BFP183WH6327XTSA1 bfp183w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142672e8cd0613
BFP183WH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 65mA; 0.45W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.45W
Case: SOT343
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
на замовлення 2765 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
40+9.07 грн
100+ 8.06 грн
120+ 7.19 грн
325+ 6.82 грн
Мінімальне замовлення: 40
BFP193WH6327 BFP193WH6327-dte.pdf
BFP193WH6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
товар відсутній
BFP196WH6327 BFP196WH6327-dte.pdf
BFP196WH6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.15A; 0.7W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 5GHz
на замовлення 2154 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
16+25.8 грн
20+ 19.09 грн
22+ 17.21 грн
28+ 13.36 грн
100+ 11.03 грн
152+ 5.59 грн
416+ 5.3 грн
Мінімальне замовлення: 16
BFR181WH6327XTSA1 BFR181WH6327.pdf
BFR181WH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
на замовлення 3545 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
18+22.67 грн
23+ 16.26 грн
34+ 10.82 грн
50+ 8.93 грн
100+ 7.55 грн
156+ 5.52 грн
428+ 5.23 грн
500+ 5.08 грн
3000+ 5.01 грн
Мінімальне замовлення: 18
IRF6216TRPBF irf6216pbf.pdf
IRF6216TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -2.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
KP236-PS2GO-KIT
KP236-PS2GO-KIT
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; pin strips,USB micro; prototype board
Application: for pressure sensors
Kind of architecture: Cortex M0
Type of development kit: ARM Infineon
Family: XMC1100
Components: XMC1100; XMC4200
Number of add-on connectors: 1
Kind of connector: pin strips; USB micro
Kit contents: prototype board
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2470.47 грн
IPD600N25N3GATMA1 Infineon-IPD600N25N3G_-DS-v02_03-en.pdf?fileId=db3a3043243b5f17012496b03c67195b
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 18A; Idm: 100A; 136W
Power dissipation: 136W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Drain-source voltage: 250V
Drain current: 18A
On-state resistance: 60mΩ
товар відсутній
TD320N16SOFHPSA1 TD320N16SOF.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; BG-PB50SB-1; Ufmax: 1.47V
Case: BG-PB50SB-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Max. off-state voltage: 1.6kV
Max. load current: 320A
Max. forward voltage: 1.47V
Load current: 320A
Semiconductor structure: double series
Gate current: 150mA
Max. forward impulse current: 9.5kA
товар відсутній
TD320N18SOF TT320N18SOF_TD320N18SOF.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; BG-PB50SB-1; Ufmax: 1.47V
Case: BG-PB50SB-1
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 320A
Max. forward voltage: 1.47V
Load current: 320A
Max. forward impulse current: 9.5kA
Type of module: diode-thyristor
товар відсутній
SPD04N80C3ATMA1 Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
SPP04N80C3 SPP04N80C3.pdf
SPP04N80C3
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
BSM50GD120DN2 description BSM50GD120DN2.pdf
BSM50GD120DN2
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: ECONOPACK 2K
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 350W
Mechanical mounting: screw
товар відсутній
IPW60R125C6FKSA1 IPW60R125C6-DTE.pdf
IPW60R125C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IFF600B12ME4PB11BPSA1 IFF600B12ME4PB11.pdf
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: AG-ECONOD-6
Application: for UPS; Inverter; motors; photovoltaics
Technology: EconoDUAL™ 3
Collector current: 600A
Gate-emitter voltage: ±20V
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Pulsed collector current: 1.2kA
товар відсутній
IRFB7530PBF irfs7530pbf.pdf
IRFB7530PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 274nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
на замовлення 68 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+156.81 грн
8+ 119.78 грн
20+ 113.25 грн
Мінімальне замовлення: 3
IRFP7530PBF irfp7530pbf.pdf
IRFP7530PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Mounting: THT
Drain-source voltage: 60V
Drain current: 281A
On-state resistance: 2mΩ
Type of transistor: N-MOSFET
Power dissipation: 341W
Polarisation: unipolar
Kind of package: tube
Gate charge: 274nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Trade name: StrongIRFET
Case: TO247AC
на замовлення 353 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+227.5 грн
5+ 172.05 грн
14+ 162.61 грн
25+ 158.98 грн
50+ 156.08 грн
Мінімальне замовлення: 2
STT2200N16P55XPSA1 STT2200N16P55.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 2.2kA; BG-PS55-1; Ufmax: 1.38V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.6kV
Load current: 2.2kA
Case: BG-PS55-1
Max. forward voltage: 1.38V
Max. forward impulse current: 17.5kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
IPA60R330P6XKSA1 IPA60R330P6-DTE.pdf
IPA60R330P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Power dissipation: 32W
Polarisation: unipolar
Technology: CoolMOS™ P6
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
товар відсутній
IPP60R330P6XKSA1 IPP60R330P6-DTE.pdf
IPP60R330P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 93W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 93W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPW60R330P6FKSA1 IPW60R330P6.pdf
IPW60R330P6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 93W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPD60R600C6ATMA1 Infineon-IPD60R600C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eef7f5937259b
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 19A; 63W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 19A
Power dissipation: 63W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPD60R600P7ATMA1 Infineon-IPD60R600P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be5a5523cc4
IPD60R600P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
On-state resistance: 0.6Ω
Drain current: 4A
Drain-source voltage: 600V
Power dissipation: 30W
Polarisation: unipolar
Case: PG-TO252-3
Features of semiconductor devices: ESD protected gate
Gate charge: 9nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 16A
товар відсутній
IPD60R600P7SAUMA1 Infineon-IPD60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d50d9fe4c403c
IPD60R600P7SAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
On-state resistance: 0.6Ω
Drain current: 4A
Drain-source voltage: 600V
Power dissipation: 30W
Polarisation: unipolar
Case: PG-TO252-3
Features of semiconductor devices: ESD protected gate
Gate charge: 9nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 16A
на замовлення 2396 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
10+39.87 грн
13+ 30.2 грн
25+ 26.5 грн
37+ 22.58 грн
102+ 21.34 грн
Мінімальне замовлення: 10
IPD60R600PFD7SAUMA1 Infineon-IPD60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed61c45f839e9
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 4A; Idm: 14A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 14A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.219Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
BC846SH6327XTSA1 BC846UE6327.pdf
BC846SH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
товар відсутній
BC847SH6327XTSA1 BC847SH6327.pdf
BC847SH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
на замовлення 1788 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
23+17.2 грн
29+ 12.63 грн
34+ 10.96 грн
50+ 7.65 грн
100+ 6.69 грн
192+ 4.4 грн
527+ 4.16 грн
Мінімальне замовлення: 23
IAUC120N04S6L008ATMA1 IAUC120N04S6L008.pdf
IAUC120N04S6L008ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
XMC4700E196F1536AAXQMA1 XMC4700-4800-DTE.pdf
XMC4700E196F1536AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-LFBGA-196
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Memory: 276kB SRAM; 1.5MB FLASH
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
товар відсутній
XMC4700E196K2048AAXQMA1 XMC4700-4800-DTE.pdf
XMC4700E196K2048AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 352kBSRAM,2048kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LFBGA-196
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Memory: 352kB SRAM; 2MB FLASH
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
товар відсутній
XMC4700F144F1536AAXQMA1 XMC4700-4800-DTE.pdf
XMC4700F144F1536AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 276kBSRAM,1536kBFLASH
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Number of inputs/outputs: 119
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Memory: 276kB SRAM; 1.5MB FLASH
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
товар відсутній
XMC4700F144F2048AAXQMA1 XMC4700-4800-DTE.pdf
XMC4700F144F2048AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 352kBSRAM,2048kBFLASH
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Number of inputs/outputs: 119
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Memory: 352kB SRAM; 2MB FLASH
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
товар відсутній
XMC4700F144K2048AAXQMA1 XMC4700-4800-DTE.pdf
XMC4700F144K2048AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 352kBSRAM,2048kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Number of inputs/outputs: 119
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Memory: 352kB SRAM; 2MB FLASH
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
товар відсутній
IPB017N06N3GATMA1 IPB017N06N3G-DTE.pdf
IPB017N06N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPB017N08N5ATMA1 IPB017N08N5-DTE.pdf
IPB017N08N5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
AUIRFN7107TR auirfn7107.pdf
AUIRFN7107TR
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 300W; PQFN5X6
Mounting: SMD
Drain-source voltage: 75V
Drain current: 53A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: reel
Gate charge: 51nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PQFN5X6
товар відсутній
STT3300N16P76XPSA1
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 3.3kA; BG-PS55-1; screw; screw
Mechanical mounting: screw
Electrical mounting: screw
Type of module: thyristor
Case: BG-PS55-1
Max. off-state voltage: 1.6kV
Load current: 3.3kA
Semiconductor structure: opposing
товар відсутній
TLE9201SGAUMA1 TLE9201SG.pdf
TLE9201SGAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; IMC,motor controller; SPI; PG-DSO-12-17; 6A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: IMC; motor controller
Interface: SPI
Case: PG-DSO-12-17
Output current: 6A
Number of channels: 2
Integrated circuit features: current monitoring; fault detection; internal temperature sensor
Mounting: SMD
On-state resistance: 0.1Ω
Operating temperature: -40...150°C
Operating voltage: 5...28V
Frequency: 0...20kHz
Kind of package: reel; tape
товар відсутній
IPP50R399CPXKSA1 IPP50R399CP-DTE.pdf
IPP50R399CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
6+63.88 грн
Мінімальне замовлення: 6
BSC098N10NS5ATMA1 BSC098N10NS5-DTE.pdf
BSC098N10NS5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IAUZ18N10S5L420ATMA1 Infineon-IAUZ18N10S5L420-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a629e850dd5
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 72A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Pulsed drain current: 72A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IPU95R2K0P7AKMA1 IPU95R2K0P7.pdf
IPU95R2K0P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 2.4A; 37W; IPAK
Type of transistor: N-MOSFET
Case: IPAK
Mounting: THT
Power dissipation: 37W
Technology: CoolMOS™ P7
Features of semiconductor devices: ESD protected gate
Kind of package: tube
Gate charge: 10nC
Polarisation: unipolar
Drain current: 2.4A
Kind of channel: enhanced
Drain-source voltage: 950V
On-state resistance: 2Ω
Gate-source voltage: ±20V
на замовлення 1271 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+53.16 грн
10+ 36.3 грн
24+ 34.12 грн
25+ 33.39 грн
66+ 31.94 грн
Мінімальне замовлення: 8
IPU95R750P7AKMA1 IPU95R750P7.pdf
IPU95R750P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK
Mounting: THT
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Technology: CoolMOS™ P7
Case: IPAK
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
IPW60R165CPFKSA1 IPW60R165CP-DTE.pdf
IPW60R165CPFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
BCR135SH6327 bcr135.pdf
BCR135SH6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
товар відсутній
IPP410N30NAKSA1 IPP410N30N-DTE.pdf
IPP410N30NAKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 44A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IRFHS8342TRPBF irfhs8342pbf.pdf
IRFHS8342TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 9.9A; 2.1W; PQFN2X2
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 9.9A
Power dissipation: 2.1W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IPZ60R017C7XKSA1 IPZ60R017C7.pdf
IPZ60R017C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 69A; 446W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 240nC
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 600V
Drain current: 69A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
товар відсутній
IPZ60R040C7XKSA1 IPZ60R040C7-DTE.pdf
IPZ60R040C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Mounting: THT
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO247-4
Drain-source voltage: 600V
Drain current: 50A
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+997.57 грн
3+ 876.22 грн
10+ 868.96 грн
IPZ65R019C7XKSA1 IPZ65R019C7-DTE.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; 446W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 75A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
товар відсутній
IPZ65R045C7XKSA1 IPZ65R045C7-DTE.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 46A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
товар відсутній
IPZ65R065C7XKSA1 IPZ65R065C7-DTE.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 171W
Polarisation: unipolar
товар відсутній
IPZA60R037P7XKSA1 IPZA60R037P7.pdf
IPZA60R037P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 121nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 48A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 255W
Polarisation: unipolar
товар відсутній
IPZA60R060P7XKSA1 IPZA60R060P7.pdf
IPZA60R060P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
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