IPA60R520C6XKSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 600V 8.1A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
на замовлення 111009 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 424+ | 50.11 грн |
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Технічний опис IPA60R520C6XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 8.1A TO220-FP, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc), Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V, Power Dissipation (Max): 29W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 230µA, Supplier Device Package: PG-TO220-FP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V.
Інші пропозиції IPA60R520C6XKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IPA60R520C6XKSA1 | Виробник : Infineon Technologies |
MOSFET N-Ch 600V 8.1A TO220FP-3 CoolMOS C6 |
на замовлення 120 шт: термін постачання 21-30 дні (днів) |
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IPA60R520C6XKSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 600V 8.1A TO220-FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V Power Dissipation (Max): 29W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 230µA Supplier Device Package: PG-TO220-FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V |
товар відсутній |
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IPA60R520C6XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8.1A; 29W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.1A Power dissipation: 29W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.52Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
товар відсутній |