Технічний опис IPP120N04S302AKSA1 Infineon Technologies
Description: MOSFET N-CH 40V 120A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 230µA, Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V.
Інші пропозиції IPP120N04S302AKSA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
IPP120N04S302AKSA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 120A; 300W Mounting: THT Power dissipation: 300W Polarisation: unipolar Kind of package: tube Gate charge: 160nC Technology: OptiMOS™ T Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO220-3 Drain-source voltage: 40V Drain current: 120A On-state resistance: 2mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
|
![]() |
IPP120N04S302AKSA1 | Виробник : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 230µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V |
товар відсутній |
|
![]() |
IPP120N04S302AKSA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 120A; 300W Mounting: THT Power dissipation: 300W Polarisation: unipolar Kind of package: tube Gate charge: 160nC Technology: OptiMOS™ T Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO220-3 Drain-source voltage: 40V Drain current: 120A On-state resistance: 2mΩ Type of transistor: N-MOSFET |
товар відсутній |