![IAUZ18N10S5L420ATMA1 IAUZ18N10S5L420ATMA1](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4838/TDSON833.jpg)
IAUZ18N10S5L420ATMA1 Infineon Technologies
![Infineon-IAUZ18N10S5L420-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a629e850dd5](/images/adobe-acrobat.png)
Description: MOSFET N-CH 100V 18A TSDSON-8-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 8µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 50 V
на замовлення 2834 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5+ | 69.19 грн |
10+ | 54.18 грн |
100+ | 42.16 грн |
500+ | 33.54 грн |
1000+ | 27.32 грн |
2000+ | 25.72 грн |
Відгуки про товар
Написати відгук
Технічний опис IAUZ18N10S5L420ATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 18A TSDSON-8-32, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 9A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 8µA, Supplier Device Package: PG-TSDSON-8-32, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 50 V.
Інші пропозиції IAUZ18N10S5L420ATMA1 за ціною від 25.5 грн до 25.5 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
---|---|---|---|---|---|---|---|---|---|
IAUZ18N10S5L420ATMA1 | Виробник : Infineon Technologies |
![]() |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
|||||
IAUZ18N10S5L420ATMA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 72A; 30W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Pulsed drain current: 72A Power dissipation: 30W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 5000 шт |
товар відсутній |
||||||
![]() |
IAUZ18N10S5L420ATMA1 | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 9A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 8µA Supplier Device Package: PG-TSDSON-8-32 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 50 V |
товар відсутній |
|||||
![]() |
IAUZ18N10S5L420ATMA1 | Виробник : Infineon Technologies |
![]() |
товар відсутній |
|||||
IAUZ18N10S5L420ATMA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 72A; 30W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Pulsed drain current: 72A Power dissipation: 30W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
товар відсутній |