Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136441) > Сторінка 2249 з 2275
| Фото | Назва | Виробник | Інформація |
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IRFB4019PBF | INFINEON TECHNOLOGIES |
  Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 17A; 80W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 17A Power dissipation: 80W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced |
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BSS138WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.28A Power dissipation: 0.5W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of channel: enhanced |
на замовлення 3840 шт: термін постачання 21-30 дні (днів) |
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BSS138WH6433XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 220mA; Idm: 1.12A Type of transistor: N-MOSFET Technology: SIPMOS® Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Pulsed drain current: 1.12A Power dissipation: 0.5W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of channel: enhanced |
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IRLHM630TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3 Kind of package: reel Technology: HEXFET® Drain-source voltage: 30V Drain current: 21A Type of transistor: N-MOSFET Power dissipation: 2.7W Polarisation: unipolar Features of semiconductor devices: logic level Kind of channel: enhanced Mounting: SMD Case: PQFN3.3X3.3 |
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IRFB4020PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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BCR08PNH6327 | INFINEON TECHNOLOGIES |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT363 Polarisation: bipolar Collector current: 0.1A Collector-emitter voltage: 50V Frequency: 170MHz Kind of transistor: BRT; complementary pair Base resistor: 2.2kΩ Type of transistor: NPN / PNP Base-emitter resistor: 47kΩ Power dissipation: 0.25W |
на замовлення 2890 шт: термін постачання 21-30 дні (днів) |
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IRFS7530TRL7PP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 240A Power dissipation: 375W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 236nC Kind of channel: enhanced Trade name: StrongIRFET |
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IRFS7530TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 295A Power dissipation: 375W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 274nC Kind of channel: enhanced Trade name: StrongIRFET |
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| 2ED21064S06JXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2 Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: PG-DSO-14 Output current: -0.7...0.29A Number of channels: 2 Supply voltage: 10...20V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 650V Protection: undervoltage UVP |
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2ED2106S06FXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2 Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: PG-DSO-8 Output current: -0.7...0.29A Number of channels: 2 Supply voltage: 10...20V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 650V Protection: undervoltage UVP |
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2ED2108S06FXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2 Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: PG-DSO-8 Output current: -0.7...0.29A Number of channels: 2 Supply voltage: 10...20V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 650V Protection: undervoltage UVP |
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2ED21091S06FXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2 Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: PG-DSO-8 Output current: -0.7...0.29A Number of channels: 2 Supply voltage: 10...20V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 650V Protection: undervoltage UVP |
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| 2ED21094S06JXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2 Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: PG-DSO-14 Output current: -0.7...0.29A Number of channels: 2 Supply voltage: 10...20V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 650V Protection: undervoltage UVP |
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2ED2109S06FXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2 Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: PG-DSO-8 Output current: -0.7...0.29A Number of channels: 2 Supply voltage: 10...20V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 650V Protection: undervoltage UVP |
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| 2ED21814S06JXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2 Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: PG-DSO-14 Output current: -2.5...2.5A Number of channels: 2 Supply voltage: 10...20V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 650V Protection: undervoltage UVP |
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2ED2181S06FXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2 Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: PG-DSO-8 Output current: -2.5...2.5A Number of channels: 2 Supply voltage: 10...20V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 650V Protection: undervoltage UVP |
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| 2ED21824S06JXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2 Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: PG-DSO-14 Output current: -2.5...2.5A Number of channels: 2 Supply voltage: 10...20V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 650V Protection: undervoltage UVP |
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2ED2182S06FXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2 Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: PG-DSO-8 Output current: -2.5...2.5A Number of channels: 2 Supply voltage: 10...20V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 650V Protection: undervoltage UVP |
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| 2ED21834S06JXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2 Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: PG-DSO-14 Output current: -2.5...2.5A Number of channels: 2 Supply voltage: 10...20V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 650V Protection: undervoltage UVP |
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2ED2183S06FXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2 Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: PG-DSO-8 Output current: -2.5...2.5A Number of channels: 2 Supply voltage: 10...20V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 650V Protection: undervoltage UVP |
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| 2ED21844S06JXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2 Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: PG-DSO-14 Output current: -2.5...2.5A Number of channels: 2 Supply voltage: 10...20V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 650V Protection: undervoltage UVP |
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2ED2184S06FXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2 Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: PG-DSO-8 Output current: -2.5...2.5A Number of channels: 2 Supply voltage: 10...20V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 650V Protection: undervoltage UVP |
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IRS2184PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -2.3...1.9A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 720ns Turn-off time: 290ns |
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BSC080N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 53A Power dissipation: 35W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Kind of channel: enhanced |
на замовлення 2546 шт: термін постачання 21-30 дні (днів) |
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AIKW75N60CTXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 428W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 470nC Kind of package: tube Turn-on time: 69ns Turn-off time: 365ns Features of semiconductor devices: integrated anti-parallel diode |
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IPA086N10N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 37.5W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 45A Power dissipation: 37.5W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8.6mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 79 шт: термін постачання 21-30 дні (днів) |
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IPT210N25NFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 54A; Idm: 276A; 375W On-state resistance: 21mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Kind of package: tape Gate charge: 86nC Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 276A Mounting: SMD Case: PG-HSOF-8 Drain-source voltage: 250V Drain current: 54A |
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IPP80R450P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; Idm: 29A; 73W Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.1A Pulsed drain current: 29A Power dissipation: 73W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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IPAN70R450P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 6.5A; 22.7W; TO220FP Power dissipation: 22.7W Case: TO220FP Mounting: THT Kind of package: tube Features of semiconductor devices: ESD protected gate Technology: CoolMOS™ P7 Gate charge: 13.1nC Polarisation: unipolar Drain current: 6.5A Kind of channel: enhanced Drain-source voltage: 700V Type of transistor: N-MOSFET Gate-source voltage: ±16V On-state resistance: 0.45Ω |
на замовлення 208 шт: термін постачання 21-30 дні (днів) |
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IRS2186SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Output current: -4...4A Number of channels: 2 Case: SO8 Mounting: SMD Operating temperature: -40...125°C Topology: MOSFET half-bridge Supply voltage: 10...20V DC Kind of package: tube Power: 625mW Voltage class: 600V Turn-on time: 192ns Turn-off time: 188ns |
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IRFB4510PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 62A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhanced |
на замовлення 61 шт: термін постачання 21-30 дні (днів) |
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IRGS6B60KDPBF | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 13A; 90W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 13A Power dissipation: 90W Case: D2PAK Mounting: SMD Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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IRGS6B60KDTRLP | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 13A; 90W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 13A Power dissipation: 90W Case: D2PAK Mounting: SMD Kind of package: reel Features of semiconductor devices: integrated anti-parallel diode |
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| ICL8810XUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; flyback; PG-DSO-8; -125÷250mA; Ch: 1; 8.1÷23V Protection: anti-overvoltage OVP; over current OCP; overheating OTP Output current: -125...250mA Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: funkcja Soft-Start Kind of integrated circuit: LED controller; PFC controller; SMPS controller Topology: flyback Mounting: SMD Case: PG-DSO-8 Operating voltage: 8.1...23V |
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| ICL8820XUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; flyback; PG-DSO-8; -125÷250mA; Ch: 1; 8.1÷23V Type of integrated circuit: driver Topology: flyback Kind of integrated circuit: LED controller; PFC controller; SMPS controller Case: PG-DSO-8 Output current: -125...250mA Number of channels: 1 Integrated circuit features: funkcja Soft-Start Mounting: SMD Operating voltage: 8.1...23V Protection: anti-overvoltage OVP; over current OCP; overheating OTP |
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IPB039N10N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 160A Power dissipation: 214W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Kind of channel: enhanced |
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| IRFH7004TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 1247A; 156W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 164A Pulsed drain current: 1247A Power dissipation: 156W Case: PQFN5X6 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhanced |
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BSP295H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223 Mounting: SMD Technology: SIPMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT223 Drain-source voltage: 60V Drain current: 1.8A On-state resistance: 0.3Ω Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar |
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BSP296NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223 Mounting: SMD Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT223 Drain-source voltage: 100V Drain current: 1.2A On-state resistance: 0.8Ω Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar |
на замовлення 118 шт: термін постачання 21-30 дні (днів) |
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BSP297H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.66A; 1.8W; SOT223 Mounting: SMD Technology: SIPMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT223 Drain-source voltage: 200V Drain current: 0.66A On-state resistance: 1.8Ω Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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| IRFR7440TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 125A Pulsed drain current: 760A Power dissipation: 140W Case: DPAK Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Kind of channel: enhanced |
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IRFU5305PBF | INFINEON TECHNOLOGIES |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -28A Power dissipation: 89W Case: IPAK Mounting: THT Kind of channel: enhanced |
на замовлення 2223 шт: термін постачання 21-30 дні (днів) |
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| IAUC90N10S5N062ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 66A; Idm: 360A; 115W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 66A Pulsed drain current: 360A Power dissipation: 115W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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IHW30N110R3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.1kV; 30A; 166W; TO247-3 Mounting: THT Case: TO247-3 Turn-off time: 470ns Type of transistor: IGBT Power dissipation: 166W Kind of package: tube Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Gate charge: 180nC Technology: TRENCHSTOP™ Collector-emitter voltage: 1.1kV Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 90A |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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IHW30N65R5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 88W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 153nC Kind of package: tube Turn-off time: 228ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
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| XMC1201Q040F0200ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,200kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-VQFN-40 Memory: 16kB SRAM; 200kB FLASH Number of inputs/outputs: 34 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1200 |
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XMC1201T038F0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-38 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 34 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO; USIC x2 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1200 |
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XMC4800F100K2048AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,2MBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Case: PG-LQFP-100 Memory: 128kB SRAM; 2MB FLASH Number of inputs/outputs: 75 Supply voltage: 3.3V DC Operating temperature: -40...125°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 18 Kind of architecture: Cortex M4 Family: XMC4800 |
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XMC4800F144F1024AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1MBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Case: PG-LQFP-144 Memory: 128kB SRAM; 1MB FLASH Number of inputs/outputs: 119 Supply voltage: 3.3V DC Operating temperature: -40...85°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 |
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XMC4800F144F1536AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1536kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-LQFP-144 Memory: 128kB SRAM; 1.5MB FLASH Number of inputs/outputs: 119 Supply voltage: 3.3V DC Operating temperature: -40...85°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 |
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XMC4800F144F2048AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,2MBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Case: PG-LQFP-144 Memory: 128kB SRAM; 2MB FLASH Number of inputs/outputs: 119 Supply voltage: 3.3V DC Operating temperature: -40...85°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 |
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XMC4800F144K1024AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1MBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Case: PG-LQFP-144 Memory: 128kB SRAM; 1MB FLASH Number of inputs/outputs: 119 Supply voltage: 3.3V DC Operating temperature: -40...125°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 |
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XMC4800F144K1536AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1536kBFLASH Operating temperature: -40...125°C Family: XMC4800 Supply voltage: 3.3V DC Number of A/D channels: 26 Kind of architecture: Cortex M4 Memory: 128kB SRAM; 1.5MB FLASH Case: PG-LQFP-144 Type of integrated circuit: ARM microcontroller Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Number of inputs/outputs: 119 Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog |
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XMC4800F144K2048AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,2MBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Case: PG-LQFP-144 Memory: 128kB SRAM; 2MB FLASH Number of inputs/outputs: 119 Supply voltage: 3.3V DC Operating temperature: -40...125°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 |
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IPB083N10N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 125W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: SMD Kind of channel: enhanced |
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FF450R12ME4EB11BPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Topology: IGBT x2; NTC thermistor Pulsed collector current: 900A Application: for UPS; Inverter; motors; photovoltaics Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit; screw Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Case: AG-ECONOD-6 Gate-emitter voltage: ±20V Collector current: 450A Technology: EconoDUAL™ 3 Mechanical mounting: screw |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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BSC066N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 64A Power dissipation: 46W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: SMD Kind of channel: enhanced |
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BSC076N06NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Kind of channel: enhanced |
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IPB026N06NATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 136W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Kind of channel: enhanced |
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XMC4500E144F1024ACXQSA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LFBGA-144; 352kBSRAM,1MBFLASH Case: PG-LFBGA-144 Operating temperature: -40...85°C Number of inputs/outputs: 91 Number of 16bit timers: 26 Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4500 Memory: 352kB SRAM; 1MB FLASH Supply voltage: 3.3V DC Type of integrated circuit: ARM microcontroller Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB |
товар відсутній |
| IRFB4019PBF | |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 17A; 80W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 17A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 17A; 80W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 17A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| BSS138WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 3840 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.29 грн |
| 41+ | 9 грн |
| 61+ | 6 грн |
| 100+ | 5.36 грн |
| 250+ | 4.65 грн |
| 257+ | 3.32 грн |
| 706+ | 3.14 грн |
| BSS138WH6433XTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 220mA; Idm: 1.12A
Type of transistor: N-MOSFET
Technology: SIPMOS®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 1.12A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 220mA; Idm: 1.12A
Type of transistor: N-MOSFET
Technology: SIPMOS®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 1.12A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRLHM630TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Kind of package: reel
Technology: HEXFET®
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Features of semiconductor devices: logic level
Kind of channel: enhanced
Mounting: SMD
Case: PQFN3.3X3.3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Kind of package: reel
Technology: HEXFET®
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Features of semiconductor devices: logic level
Kind of channel: enhanced
Mounting: SMD
Case: PQFN3.3X3.3
товар відсутній
| IRFB4020PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.41 грн |
| 10+ | 79.85 грн |
| 14+ | 63.88 грн |
| BCR08PNH6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT363
Polarisation: bipolar
Collector current: 0.1A
Collector-emitter voltage: 50V
Frequency: 170MHz
Kind of transistor: BRT; complementary pair
Base resistor: 2.2kΩ
Type of transistor: NPN / PNP
Base-emitter resistor: 47kΩ
Power dissipation: 0.25W
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT363
Polarisation: bipolar
Collector current: 0.1A
Collector-emitter voltage: 50V
Frequency: 170MHz
Kind of transistor: BRT; complementary pair
Base resistor: 2.2kΩ
Type of transistor: NPN / PNP
Base-emitter resistor: 47kΩ
Power dissipation: 0.25W
на замовлення 2890 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 11.57 грн |
| 40+ | 9.58 грн |
| 100+ | 8.49 грн |
| 115+ | 7.4 грн |
| 315+ | 7.04 грн |
| IRFS7530TRL7PP |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 236nC
Kind of channel: enhanced
Trade name: StrongIRFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 236nC
Kind of channel: enhanced
Trade name: StrongIRFET
товар відсутній
| IRFS7530TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 274nC
Kind of channel: enhanced
Trade name: StrongIRFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 274nC
Kind of channel: enhanced
Trade name: StrongIRFET
товар відсутній
| 2ED21064S06JXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
товар відсутній
| 2ED2106S06FXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
товар відсутній
| 2ED2108S06FXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
товар відсутній
| 2ED21091S06FXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
товар відсутній
| 2ED21094S06JXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
товар відсутній
| 2ED2109S06FXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
товар відсутній
| 2ED21814S06JXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
товар відсутній
| 2ED2181S06FXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
товар відсутній
| 2ED21824S06JXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
товар відсутній
| 2ED2182S06FXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
товар відсутній
| 2ED21834S06JXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
товар відсутній
| 2ED2183S06FXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
товар відсутній
| 2ED21844S06JXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
товар відсутній
| 2ED2184S06FXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
товар відсутній
| IRS2184PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
товар відсутній
| BSC080N03MSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 2546 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 29.47 грн |
| 25+ | 24.25 грн |
| 39+ | 21.8 грн |
| 100+ | 21.71 грн |
| 107+ | 20.61 грн |
| 250+ | 20.25 грн |
| 1000+ | 19.82 грн |
| AIKW75N60CTXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 365ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 365ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IPA086N10N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 37.5W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 37.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 37.5W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 37.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 79 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.05 грн |
| 10+ | 65.34 грн |
| 15+ | 56.62 грн |
| 41+ | 53.72 грн |
| IPT210N25NFDATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 54A; Idm: 276A; 375W
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tape
Gate charge: 86nC
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 276A
Mounting: SMD
Case: PG-HSOF-8
Drain-source voltage: 250V
Drain current: 54A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 54A; Idm: 276A; 375W
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tape
Gate charge: 86nC
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 276A
Mounting: SMD
Case: PG-HSOF-8
Drain-source voltage: 250V
Drain current: 54A
товар відсутній
| IPP80R450P7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; Idm: 29A; 73W
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Pulsed drain current: 29A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; Idm: 29A; 73W
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Pulsed drain current: 29A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 67 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 143.74 грн |
| 8+ | 110.34 грн |
| 22+ | 104.54 грн |
| IPAN70R450P7SXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.5A; 22.7W; TO220FP
Power dissipation: 22.7W
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Technology: CoolMOS™ P7
Gate charge: 13.1nC
Polarisation: unipolar
Drain current: 6.5A
Kind of channel: enhanced
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 0.45Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.5A; 22.7W; TO220FP
Power dissipation: 22.7W
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Technology: CoolMOS™ P7
Gate charge: 13.1nC
Polarisation: unipolar
Drain current: 6.5A
Kind of channel: enhanced
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 0.45Ω
на замовлення 208 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 78.18 грн |
| 6+ | 62.43 грн |
| 10+ | 55.17 грн |
| 18+ | 49.36 грн |
| 47+ | 46.46 грн |
| IRS2186SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Output current: -4...4A
Number of channels: 2
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Topology: MOSFET half-bridge
Supply voltage: 10...20V DC
Kind of package: tube
Power: 625mW
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Output current: -4...4A
Number of channels: 2
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Topology: MOSFET half-bridge
Supply voltage: 10...20V DC
Kind of package: tube
Power: 625mW
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
товар відсутній
| IRFB4510PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 61 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 100.85 грн |
| 10+ | 62.43 грн |
| 15+ | 57.35 грн |
| 41+ | 54.45 грн |
| IRGS6B60KDPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IRGS6B60KDTRLP |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| ICL8810XUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PG-DSO-8; -125÷250mA; Ch: 1; 8.1÷23V
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Output current: -125...250mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: funkcja Soft-Start
Kind of integrated circuit: LED controller; PFC controller; SMPS controller
Topology: flyback
Mounting: SMD
Case: PG-DSO-8
Operating voltage: 8.1...23V
Category: LED drivers
Description: IC: driver; flyback; PG-DSO-8; -125÷250mA; Ch: 1; 8.1÷23V
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Output current: -125...250mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: funkcja Soft-Start
Kind of integrated circuit: LED controller; PFC controller; SMPS controller
Topology: flyback
Mounting: SMD
Case: PG-DSO-8
Operating voltage: 8.1...23V
товар відсутній
| ICL8820XUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PG-DSO-8; -125÷250mA; Ch: 1; 8.1÷23V
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED controller; PFC controller; SMPS controller
Case: PG-DSO-8
Output current: -125...250mA
Number of channels: 1
Integrated circuit features: funkcja Soft-Start
Mounting: SMD
Operating voltage: 8.1...23V
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Category: LED drivers
Description: IC: driver; flyback; PG-DSO-8; -125÷250mA; Ch: 1; 8.1÷23V
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED controller; PFC controller; SMPS controller
Case: PG-DSO-8
Output current: -125...250mA
Number of channels: 1
Integrated circuit features: funkcja Soft-Start
Mounting: SMD
Operating voltage: 8.1...23V
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
товар відсутній
| IPB039N10N3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRFH7004TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 1247A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 164A
Pulsed drain current: 1247A
Power dissipation: 156W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 1247A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 164A
Pulsed drain current: 1247A
Power dissipation: 156W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSP295H6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 60V
Drain current: 1.8A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 60V
Drain current: 1.8A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
товар відсутній
| BSP296NH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Mounting: SMD
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 100V
Drain current: 1.2A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Mounting: SMD
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 100V
Drain current: 1.2A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
на замовлення 118 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 67.23 грн |
| 12+ | 32.67 грн |
| 25+ | 25.77 грн |
| 36+ | 24.03 грн |
| 98+ | 22.72 грн |
| 100+ | 22 грн |
| BSP297H6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.66A; 1.8W; SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 200V
Drain current: 0.66A
On-state resistance: 1.8Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.66A; 1.8W; SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 200V
Drain current: 0.66A
On-state resistance: 1.8Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
на замовлення 12 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 57.07 грн |
| IRFR7440TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 125A
Pulsed drain current: 760A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 125A
Pulsed drain current: 760A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRFU5305PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
на замовлення 2223 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 70.36 грн |
| 10+ | 55.9 грн |
| 19+ | 45.73 грн |
| 51+ | 43.56 грн |
| IAUC90N10S5N062ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 66A; Idm: 360A; 115W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 66A
Pulsed drain current: 360A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 66A; Idm: 360A; 115W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 66A
Pulsed drain current: 360A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IHW30N110R3FKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.1kV; 30A; 166W; TO247-3
Mounting: THT
Case: TO247-3
Turn-off time: 470ns
Type of transistor: IGBT
Power dissipation: 166W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 180nC
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.1kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.1kV; 30A; 166W; TO247-3
Mounting: THT
Case: TO247-3
Turn-off time: 470ns
Type of transistor: IGBT
Power dissipation: 166W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 180nC
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.1kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 329.92 грн |
| 3+ | 270.05 грн |
| IHW30N65R5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 88W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Turn-off time: 228ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 88W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Turn-off time: 228ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
товар відсутній
| XMC1201Q040F0200ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-40
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1200
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-40
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1200
товар відсутній
| XMC1201T038F0064ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-38
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO; USIC x2
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1200
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-38
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO; USIC x2
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1200
товар відсутній
| XMC4800F100K2048AAXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
товар відсутній
| XMC4800F144F1024AAXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 1MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 1MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
товар відсутній
| XMC4800F144F1536AAXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
товар відсутній
| XMC4800F144F2048AAXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
товар відсутній
| XMC4800F144K1024AAXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 1MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 1MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
товар відсутній
| XMC4800F144K1536AAXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1536kBFLASH
Operating temperature: -40...125°C
Family: XMC4800
Supply voltage: 3.3V DC
Number of A/D channels: 26
Kind of architecture: Cortex M4
Memory: 128kB SRAM; 1.5MB FLASH
Case: PG-LQFP-144
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Number of inputs/outputs: 119
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1536kBFLASH
Operating temperature: -40...125°C
Family: XMC4800
Supply voltage: 3.3V DC
Number of A/D channels: 26
Kind of architecture: Cortex M4
Memory: 128kB SRAM; 1.5MB FLASH
Case: PG-LQFP-144
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Number of inputs/outputs: 119
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
товар відсутній
| XMC4800F144K2048AAXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
товар відсутній
| IPB083N10N3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| FF450R12ME4EB11BPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Topology: IGBT x2; NTC thermistor
Pulsed collector current: 900A
Application: for UPS; Inverter; motors; photovoltaics
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Case: AG-ECONOD-6
Gate-emitter voltage: ±20V
Collector current: 450A
Technology: EconoDUAL™ 3
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Topology: IGBT x2; NTC thermistor
Pulsed collector current: 900A
Application: for UPS; Inverter; motors; photovoltaics
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Case: AG-ECONOD-6
Gate-emitter voltage: ±20V
Collector current: 450A
Technology: EconoDUAL™ 3
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 12527.46 грн |
| BSC066N06NSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC076N06NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPB026N06NATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| XMC4500E144F1024ACXQSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 352kBSRAM,1MBFLASH
Case: PG-LFBGA-144
Operating temperature: -40...85°C
Number of inputs/outputs: 91
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 352kB SRAM; 1MB FLASH
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 352kBSRAM,1MBFLASH
Case: PG-LFBGA-144
Operating temperature: -40...85°C
Number of inputs/outputs: 91
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 352kB SRAM; 1MB FLASH
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
товар відсутній