IPP60R330P6XKSA1

IPP60R330P6XKSA1 Infineon Technologies


45132397691850792infineon-ipx60r330p6-ds-v02_01-en.pdffolderid5546d4694909da480149.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис IPP60R330P6XKSA1 Infineon Technologies

Description: MOSFET N-CH 600V 12A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V, Power Dissipation (Max): 93W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 370µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V.

Інші пропозиції IPP60R330P6XKSA1

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
IPP60R330P6XKSA1 IPP60R330P6XKSA1 Виробник : INFINEON TECHNOLOGIES IPP60R330P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 93W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 93W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP60R330P6XKSA1 IPP60R330P6XKSA1 Виробник : Infineon Technologies IPx60R330P6.pdf Description: MOSFET N-CH 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
товар відсутній
IPP60R330P6XKSA1 IPP60R330P6XKSA1 Виробник : INFINEON TECHNOLOGIES IPP60R330P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 93W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 93W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній