IPA60R330P6XKSA1 Infineon Technologies
на замовлення 476 шт:
термін постачання 21-30 дні (днів)
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Технічний опис IPA60R330P6XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220-FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 370µA, Supplier Device Package: PG-TO220-FP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V.
Інші пропозиції IPA60R330P6XKSA1
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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IPA60R330P6XKSA1 | Виробник : INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP Mounting: THT Case: TO220FP Kind of package: tube Power dissipation: 32W Polarisation: unipolar Technology: CoolMOS™ P6 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 600V Drain current: 12A On-state resistance: 0.33Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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IPA60R330P6XKSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 600V 12A TO220-FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 370µA Supplier Device Package: PG-TO220-FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V |
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IPA60R330P6XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP Mounting: THT Case: TO220FP Kind of package: tube Power dissipation: 32W Polarisation: unipolar Technology: CoolMOS™ P6 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 600V Drain current: 12A On-state resistance: 0.33Ω Type of transistor: N-MOSFET |
товар відсутній |