IPU95R2K0P7AKMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 950V 4A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
на замовлення 6957 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 590+ | 35.85 грн |
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Технічний опис IPU95R2K0P7AKMA1 Infineon Technologies
Description: MOSFET N-CH 950V 4A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V, Power Dissipation (Max): 37W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 80µA, Supplier Device Package: PG-TO251-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V.
Інші пропозиції IPU95R2K0P7AKMA1 за ціною від 31.94 грн до 110.58 грн
| Фото | Назва | Виробник | Інформація |
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IPU95R2K0P7AKMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 2.4A; 37W; IPAK Type of transistor: N-MOSFET Case: IPAK Mounting: THT Power dissipation: 37W Technology: CoolMOS™ P7 Features of semiconductor devices: ESD protected gate Kind of package: tube Gate charge: 10nC Polarisation: unipolar Drain current: 2.4A Kind of channel: enhanced Drain-source voltage: 950V On-state resistance: 2Ω Gate-source voltage: ±20V |
на замовлення 1271 шт: термін постачання 21-30 дні (днів) |
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IPU95R2K0P7AKMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 2.4A; 37W; IPAK Type of transistor: N-MOSFET Case: IPAK Mounting: THT Power dissipation: 37W Technology: CoolMOS™ P7 Features of semiconductor devices: ESD protected gate Kind of package: tube Gate charge: 10nC Polarisation: unipolar Drain current: 2.4A Kind of channel: enhanced Drain-source voltage: 950V On-state resistance: 2Ω Gate-source voltage: ±20V кількість в упаковці: 1 шт |
на замовлення 1271 шт: термін постачання 14-21 дні (днів) |
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IPU95R2K0P7AKMA1 | Виробник : Infineon Technologies |
MOSFET LOW POWER_NEW |
на замовлення 3000 шт: термін постачання 621-630 дні (днів) |
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IPU95R2K0P7AKMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 950V 4A 3-Pin(3+Tab) TO-251 Tube |
товар відсутній |
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IPU95R2K0P7AKMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 950V 4A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 80µA Supplier Device Package: PG-TO251-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V |
товар відсутній |