Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136441) > Сторінка 2250 з 2275
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XMC4500E144X1024ACXQSA1 | INFINEON TECHNOLOGIES |
 Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-LFBGA-144; 200kBSRAM,1MBFLASH Type of integrated circuit: ARM microcontroller Case: PG-LFBGA-144 Memory: 200kB SRAM; 1MB FLASH Number of inputs/outputs: 91 Number of 16bit timers: 26 Supply voltage: 3.3V DC Operating temperature: -40...105°C Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4500 |
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XMC4500F100F1024ACXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH Type of integrated circuit: ARM microcontroller Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 160kB SRAM; 1MB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-100 Operating temperature: -40...85°C Number of inputs/outputs: 55 Family: XMC4500 Number of A/D channels: 18 Number of 16bit timers: 26 Kind of architecture: Cortex M4 |
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XMC4500F144F1024ACXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH Type of integrated circuit: ARM microcontroller Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 160kB SRAM; 1MB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-144 Operating temperature: -40...85°C Number of inputs/outputs: 91 Family: XMC4500 Number of A/D channels: 26 Number of 16bit timers: 26 Kind of architecture: Cortex M4 |
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XMC4500F144K1024ACXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH Type of integrated circuit: ARM microcontroller Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 160kB SRAM; 1MB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-144 Operating temperature: -40...125°C Number of inputs/outputs: 91 Family: XMC4500 Number of A/D channels: 26 Number of 16bit timers: 26 Kind of architecture: Cortex M4 |
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IRFH5406TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 3.6W; PQFN5X6 Mounting: SMD Case: PQFN5X6 Power dissipation: 3.6W Kind of package: reel Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Drain-source voltage: 60V Drain current: 11A Type of transistor: N-MOSFET |
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IRFB7540PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 160W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced |
на замовлення 71 шт: термін постачання 21-30 дні (днів) |
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IRFS7540TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 160W; D2PAK; StrongIRFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 110A Power dissipation: 160W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: SMD Gate charge: 88nC Kind of channel: enhanced Trade name: StrongIRFET |
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XMC4108F64K64ABXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 20kB SRAM; 64kB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-64 Operating temperature: -40...125°C Number of inputs/outputs: 21 Family: XMC4100 Number of A/D channels: 8 Kind of architecture: Cortex M4 |
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XMC4108Q48K64ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 20kB SRAM; 64kB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-VQFN-48 Operating temperature: -40...125°C Number of inputs/outputs: 21 Family: XMC4100 Number of A/D channels: 8 Kind of architecture: Cortex M4 |
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BSZ042N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Kind of channel: enhanced |
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IPI032N06N3GAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 188W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: THT Kind of channel: enhanced |
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IPP052N06L3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3 Mounting: THT Kind of package: tube Polarisation: unipolar Case: PG-TO220-3 Power dissipation: 115W Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 80A On-state resistance: 5.2mΩ Type of transistor: N-MOSFET |
на замовлення 93 шт: термін постачання 21-30 дні (днів) |
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IRF7501TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.4A; 1.2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.4A Power dissipation: 1.2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7506TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -1.7A; 1.25W; SO8 Type of transistor: P-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.7A Power dissipation: 1.25W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7507TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 2.4/-1A; 1.25W; SO8 Kind of package: reel Drain-source voltage: 20/-20V Drain current: 2.4/-1A On-state resistance: 0.135/0.27Ω Type of transistor: N/P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±12V Mounting: SMD Case: SO8 |
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IRF7509TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2A; 1.25W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 2.7/-2A Power dissipation: 1.25W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.11/0.2Ω Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPB020N10N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 375W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhanced |
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IPB020N10N5LF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 313W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhanced |
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IPT020N10N3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 212A Pulsed drain current: 1.2kA Power dissipation: 375W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 156nC Kind of package: tape Kind of channel: enhanced |
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SMBT3904SH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363 Mounting: SMD Polarisation: bipolar Case: SOT363 Frequency: 300MHz Collector-emitter voltage: 40V Collector current: 0.2A Type of transistor: NPN Power dissipation: 0.25W |
на замовлення 113 шт: термін постачання 21-30 дні (днів) |
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DD260N16K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 260A Case: BG-PB50-1 Max. forward voltage: 1.32V Max. forward impulse current: 9.5kA Electrical mounting: screw Mechanical mounting: screw |
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DD260N18K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; double series; 1.8kV; If: 260A; BG-PB50-1; screw Max. off-state voltage: 1.8kV Load current: 260A Case: BG-PB50-1 Max. forward impulse current: 9.5kA Semiconductor structure: double series Mechanical mounting: screw Max. forward voltage: 1.32V Electrical mounting: screw Type of module: diode |
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ND260N14K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 1.4kV; If: 260A; BG-PB50ND-1; screw Max. off-state voltage: 1.4kV Load current: 260A Case: BG-PB50ND-1 Max. forward impulse current: 9.5kA Semiconductor structure: single diode Mechanical mounting: screw Max. forward voltage: 1.2V Electrical mounting: screw Type of module: diode |
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TT260N22KOFHOSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: thyristor Case: BG-PB50AT-1 Max. off-state voltage: 2.2kV Max. forward voltage: 1.45V Load current: 260A Semiconductor structure: double series Gate current: 200mA Max. forward impulse current: 8kA |
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| SAK-TC1797-384F150E | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC Type of integrated circuit: microcontroller Case: BGA416 Memory: 3MB FLASH Mounting: SMD Supply voltage: 3.5...5V DC Interface: I2C; SPI; UART |
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XMC1100Q024F0008ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-24; 8kBFLASH,16kBSRAM; XMC1100 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-24 Memory: 8kB FLASH; 16kB SRAM Number of inputs/outputs: 22 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 8 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100Q024F0016ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-24; 16kBFLASH,16kBSRAM; XMC1100 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-24 Memory: 16kB FLASH; 16kB SRAM Number of inputs/outputs: 22 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 8 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100Q024F0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1100 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-24 Memory: 16kB SRAM; 32kB FLASH Number of inputs/outputs: 22 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 8 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100Q024F0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1100 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-24 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 22 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 8 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100Q040F0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1100 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-40 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 34 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100T016F0008ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-16; 8kBFLASH,16kBSRAM; XMC1100 Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-16 Memory: 8kB FLASH; 16kB SRAM Number of inputs/outputs: 14 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 6 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100T016F0016ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBFLASH,16kBSRAM Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-16 Memory: 16kB FLASH; 16kB SRAM Number of inputs/outputs: 14 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 6 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100T016F0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-16 Memory: 16kB SRAM; 32kB FLASH Number of inputs/outputs: 14 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 6 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100T016F0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-16 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 14 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 6 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100T016X0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-16 Memory: 16kB SRAM; 32kB FLASH Number of inputs/outputs: 14 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 6 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100T016X0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-16 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 14 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 6 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100T038F0016ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-38 Memory: 16kB FLASH; 16kB SRAM Number of inputs/outputs: 34 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100T038F0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-38 Memory: 16kB SRAM; 32kB FLASH Number of inputs/outputs: 34 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100T038X0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-38 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 34 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1100 |
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| XMC1202Q024X0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1200 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-24 Memory: 16kB SRAM; 32kB FLASH Number of inputs/outputs: 22 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: GPIO; USIC x2 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 8 Kind of architecture: Cortex M0 Family: XMC1200 |
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| XMC1202Q040X0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1200 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-40 Memory: 16kB SRAM; 32kB FLASH Number of inputs/outputs: 26 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: GPIO; USIC x2 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1200 |
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BTS723GW | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14 Mounting: SMD Supply voltage: 7...58V DC Technology: Classic PROFET Kind of integrated circuit: high-side Case: SO14 On-state resistance: 53mΩ Output current: 2.9...4.2A Type of integrated circuit: power switch Number of channels: 2 Kind of output: N-Channel |
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| IPD35N10S3L26ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A Type of transistor: N-MOSFET Technology: OptiMOS® -T Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Pulsed drain current: 140A Power dissipation: 71W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Kind of channel: enhanced |
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IRG7PH44K10D-EPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 70A; 320W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 70A Power dissipation: 320W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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IRG7PH46UD-EP | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 57A; 390W; TO247-3; single transistor Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 57A Power dissipation: 390W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 160A Mounting: THT Gate charge: 0.32µC Kind of package: tube Semiconductor structure: single transistor Features of semiconductor devices: integrated anti-parallel diode |
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IRFR2307ZTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 110W; DPAK Power dissipation: 110W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: DPAK Drain-source voltage: 75V Drain current: 53A Type of transistor: N-MOSFET |
товар відсутній |
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IDW15G120C5BFKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 7.5Ax2; 200W; tube Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 7.5A x2 Power dissipation: 200W Semiconductor structure: common cathode; double Case: PG-TO247-3 Kind of package: tube Max. forward impulse current: 160A Max. forward voltage: 1.4V Leakage current: 8µA |
на замовлення 208 шт: термін постачання 21-30 дні (днів) |
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IDW20G120C5BFKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 250W; tube Case: PG-TO247-3 Mounting: THT Technology: CoolSiC™ 5G; SiC Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 180A Leakage current: 12µA Max. off-state voltage: 1.2kV Power dissipation: 250W Kind of package: tube Type of diode: Schottky rectifying Max. forward voltage: 1.4V |
товар відсутній |
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IDW20G65C5BXKSA2 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 130W; PG-TO247-3 Case: PG-TO247-3 Mounting: THT Technology: CoolSiC™ 5G; SiC Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 46A Leakage current: 2µA Max. off-state voltage: 650V Power dissipation: 130W Kind of package: tube Type of diode: Schottky rectifying Max. forward voltage: 1.8V |
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| IPD50P03P4L11ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -42A; 58W Drain-source voltage: -30V Drain current: -42A On-state resistance: 10.5mΩ Type of transistor: P-MOSFET Power dissipation: 58W Polarisation: unipolar Case: PG-TO252-3-11 Mounting: SMD Technology: OptiMOS® -P2 Kind of channel: enhanced Gate-source voltage: -5...16V Pulsed drain current: -200A |
товар відсутній |
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| IPD50P04P413ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W Type of transistor: P-MOSFET Technology: OptiMOS® -P2 Polarisation: unipolar Drain-source voltage: -40V Drain current: -45A Pulsed drain current: -200A Power dissipation: 58W Case: PG-TO252-3-313 Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: SMD Kind of channel: enhanced |
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IPD50P04P4L11ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W Polarisation: unipolar Power dissipation: 58W Type of transistor: P-MOSFET On-state resistance: 10.6mΩ Drain current: -40A Gate charge: 14nC Drain-source voltage: -40V Technology: OptiMOS® -P2 Kind of channel: enhanced Gate-source voltage: -16...5V Case: PG-TO252-3-313 Pulsed drain current: -200A Mounting: SMD |
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IPD50R399CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 9A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.399Ω Mounting: SMD Kind of channel: enhanced |
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IPD50R399CPBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 9A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.399Ω Mounting: SMD Kind of channel: enhanced |
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IPD50R500CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.8A Pulsed drain current: 24A Power dissipation: 57W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 18.7nC Kind of package: reel Kind of channel: enhanced |
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IPD50R520CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.1A Power dissipation: 66W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.52Ω Mounting: SMD Kind of channel: enhanced |
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IPD50R520CPBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.1A Power dissipation: 66W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.52Ω Mounting: SMD Kind of channel: enhanced |
товар відсутній |
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IPD50R950CEATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 4.3A; 34W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.3A Power dissipation: 34W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: SMD Kind of channel: enhanced |
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TD120N16SOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V Case: BG-SB20-1 Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Max. off-state voltage: 1.6kV Max. load current: 190A Max. forward voltage: 1.75V Load current: 120A Semiconductor structure: double series Gate current: 100mA Max. forward impulse current: 2.25kA |
товар відсутній |
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TT120N16SOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 120A; BG-SB20-1; screw Case: BG-SB20-1 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: thyristor Max. off-state voltage: 1.6kV Max. forward voltage: 1.75V Load current: 120A Semiconductor structure: double series Gate current: 100mA Max. forward impulse current: 2.25kA |
товар відсутній |
| XMC4500E144X1024ACXQSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 200kBSRAM,1MBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-144
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 91
Number of 16bit timers: 26
Supply voltage: 3.3V DC
Operating temperature: -40...105°C
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4500
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 200kBSRAM,1MBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-144
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 91
Number of 16bit timers: 26
Supply voltage: 3.3V DC
Operating temperature: -40...105°C
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4500
товар відсутній
| XMC4500F100F1024ACXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 160kB SRAM; 1MB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Operating temperature: -40...85°C
Number of inputs/outputs: 55
Family: XMC4500
Number of A/D channels: 18
Number of 16bit timers: 26
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 160kB SRAM; 1MB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Operating temperature: -40...85°C
Number of inputs/outputs: 55
Family: XMC4500
Number of A/D channels: 18
Number of 16bit timers: 26
Kind of architecture: Cortex M4
товар відсутній
| XMC4500F144F1024ACXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 160kB SRAM; 1MB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Operating temperature: -40...85°C
Number of inputs/outputs: 91
Family: XMC4500
Number of A/D channels: 26
Number of 16bit timers: 26
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 160kB SRAM; 1MB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Operating temperature: -40...85°C
Number of inputs/outputs: 91
Family: XMC4500
Number of A/D channels: 26
Number of 16bit timers: 26
Kind of architecture: Cortex M4
товар відсутній
| XMC4500F144K1024ACXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 160kB SRAM; 1MB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Operating temperature: -40...125°C
Number of inputs/outputs: 91
Family: XMC4500
Number of A/D channels: 26
Number of 16bit timers: 26
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 160kB SRAM; 1MB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Operating temperature: -40...125°C
Number of inputs/outputs: 91
Family: XMC4500
Number of A/D channels: 26
Number of 16bit timers: 26
Kind of architecture: Cortex M4
товар відсутній
| IRFH5406TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 3.6W; PQFN5X6
Mounting: SMD
Case: PQFN5X6
Power dissipation: 3.6W
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 60V
Drain current: 11A
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 3.6W; PQFN5X6
Mounting: SMD
Case: PQFN5X6
Power dissipation: 3.6W
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 60V
Drain current: 11A
Type of transistor: N-MOSFET
товар відсутній
| IRFB7540PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 71 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 52.49 грн |
| 10+ | 45.52 грн |
| 21+ | 40.15 грн |
| 58+ | 37.97 грн |
| IRFS7540TRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 160W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 88nC
Kind of channel: enhanced
Trade name: StrongIRFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 160W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 88nC
Kind of channel: enhanced
Trade name: StrongIRFET
товар відсутній
| XMC4108F64K64ABXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 20kB SRAM; 64kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...125°C
Number of inputs/outputs: 21
Family: XMC4100
Number of A/D channels: 8
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 20kB SRAM; 64kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...125°C
Number of inputs/outputs: 21
Family: XMC4100
Number of A/D channels: 8
Kind of architecture: Cortex M4
товар відсутній
| XMC4108Q48K64ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 20kB SRAM; 64kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Operating temperature: -40...125°C
Number of inputs/outputs: 21
Family: XMC4100
Number of A/D channels: 8
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 20kB SRAM; 64kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Operating temperature: -40...125°C
Number of inputs/outputs: 21
Family: XMC4100
Number of A/D channels: 8
Kind of architecture: Cortex M4
товар відсутній
| BSZ042N06NSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPI032N06N3GAKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IPP052N06L3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Case: PG-TO220-3
Power dissipation: 115W
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Case: PG-TO220-3
Power dissipation: 115W
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
на замовлення 93 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.22 грн |
| 10+ | 67.51 грн |
| 15+ | 58.8 грн |
| 40+ | 55.9 грн |
| IRF7501TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.4A; 1.2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Power dissipation: 1.2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.4A; 1.2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Power dissipation: 1.2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF7506TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -1.7A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.7A
Power dissipation: 1.25W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -1.7A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.7A
Power dissipation: 1.25W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF7507TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 2.4/-1A; 1.25W; SO8
Kind of package: reel
Drain-source voltage: 20/-20V
Drain current: 2.4/-1A
On-state resistance: 0.135/0.27Ω
Type of transistor: N/P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SO8
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 2.4/-1A; 1.25W; SO8
Kind of package: reel
Drain-source voltage: 20/-20V
Drain current: 2.4/-1A
On-state resistance: 0.135/0.27Ω
Type of transistor: N/P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SO8
товар відсутній
| IRF7509TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2A; 1.25W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.7/-2A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.11/0.2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2A; 1.25W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.7/-2A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.11/0.2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPB020N10N5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPB020N10N5LF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPT020N10N3ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhanced
товар відсутній
| SMBT3904SH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Mounting: SMD
Polarisation: bipolar
Case: SOT363
Frequency: 300MHz
Collector-emitter voltage: 40V
Collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.25W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Mounting: SMD
Polarisation: bipolar
Case: SOT363
Frequency: 300MHz
Collector-emitter voltage: 40V
Collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.25W
на замовлення 113 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 4.94 грн |
| 100+ | 4.04 грн |
| DD260N16K |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 260A
Case: BG-PB50-1
Max. forward voltage: 1.32V
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 260A
Case: BG-PB50-1
Max. forward voltage: 1.32V
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| DD260N18K |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 260A; BG-PB50-1; screw
Max. off-state voltage: 1.8kV
Load current: 260A
Case: BG-PB50-1
Max. forward impulse current: 9.5kA
Semiconductor structure: double series
Mechanical mounting: screw
Max. forward voltage: 1.32V
Electrical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 260A; BG-PB50-1; screw
Max. off-state voltage: 1.8kV
Load current: 260A
Case: BG-PB50-1
Max. forward impulse current: 9.5kA
Semiconductor structure: double series
Mechanical mounting: screw
Max. forward voltage: 1.32V
Electrical mounting: screw
Type of module: diode
товар відсутній
| ND260N14K |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.4kV; If: 260A; BG-PB50ND-1; screw
Max. off-state voltage: 1.4kV
Load current: 260A
Case: BG-PB50ND-1
Max. forward impulse current: 9.5kA
Semiconductor structure: single diode
Mechanical mounting: screw
Max. forward voltage: 1.2V
Electrical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; single diode; 1.4kV; If: 260A; BG-PB50ND-1; screw
Max. off-state voltage: 1.4kV
Load current: 260A
Case: BG-PB50ND-1
Max. forward impulse current: 9.5kA
Semiconductor structure: single diode
Mechanical mounting: screw
Max. forward voltage: 1.2V
Electrical mounting: screw
Type of module: diode
товар відсутній
| TT260N22KOFHOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB50AT-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.45V
Load current: 260A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 8kA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB50AT-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.45V
Load current: 260A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 8kA
товар відсутній
| SAK-TC1797-384F150E |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC
Type of integrated circuit: microcontroller
Case: BGA416
Memory: 3MB FLASH
Mounting: SMD
Supply voltage: 3.5...5V DC
Interface: I2C; SPI; UART
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC
Type of integrated circuit: microcontroller
Case: BGA416
Memory: 3MB FLASH
Mounting: SMD
Supply voltage: 3.5...5V DC
Interface: I2C; SPI; UART
товар відсутній
| XMC1100Q024F0008ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 8kBFLASH,16kBSRAM; XMC1100
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 8kB FLASH; 16kB SRAM
Number of inputs/outputs: 22
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 8kBFLASH,16kBSRAM; XMC1100
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 8kB FLASH; 16kB SRAM
Number of inputs/outputs: 22
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1100Q024F0016ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBFLASH,16kBSRAM; XMC1100
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB FLASH; 16kB SRAM
Number of inputs/outputs: 22
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBFLASH,16kBSRAM; XMC1100
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB FLASH; 16kB SRAM
Number of inputs/outputs: 22
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1100Q024F0032ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1100
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 22
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1100
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 22
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1100Q024F0064ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1100
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 22
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1100
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 22
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1100Q040F0064ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1100
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-40
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1100
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-40
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1100T016F0008ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 8kBFLASH,16kBSRAM; XMC1100
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 8kB FLASH; 16kB SRAM
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 8kBFLASH,16kBSRAM; XMC1100
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 8kB FLASH; 16kB SRAM
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1100T016F0016ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBFLASH,16kBSRAM
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB FLASH; 16kB SRAM
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBFLASH,16kBSRAM
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB FLASH; 16kB SRAM
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1100T016F0032ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1100T016F0064ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1100T016X0032ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1100T016X0064ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1100T038F0016ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-38
Memory: 16kB FLASH; 16kB SRAM
Number of inputs/outputs: 34
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-38
Memory: 16kB FLASH; 16kB SRAM
Number of inputs/outputs: 34
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1100T038F0032ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-38
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-38
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1100T038X0064ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-38
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-38
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1202Q024X0032ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1200
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 22
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1200
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1200
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 22
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1200
товар відсутній
| XMC1202Q040X0032ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1200
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-40
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 26
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1200
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1200
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-40
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 26
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1200
товар відсутній
| BTS723GW |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14
Mounting: SMD
Supply voltage: 7...58V DC
Technology: Classic PROFET
Kind of integrated circuit: high-side
Case: SO14
On-state resistance: 53mΩ
Output current: 2.9...4.2A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14
Mounting: SMD
Supply voltage: 7...58V DC
Technology: Classic PROFET
Kind of integrated circuit: high-side
Case: SO14
On-state resistance: 53mΩ
Output current: 2.9...4.2A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
товар відсутній
| IPD35N10S3L26ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRG7PH44K10D-EPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 70A; 320W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 70A
Power dissipation: 320W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 70A; 320W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 70A
Power dissipation: 320W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IRG7PH46UD-EP |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 57A; 390W; TO247-3; single transistor
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 57A
Power dissipation: 390W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Semiconductor structure: single transistor
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 57A; 390W; TO247-3; single transistor
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 57A
Power dissipation: 390W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Semiconductor structure: single transistor
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IRFR2307ZTRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 110W; DPAK
Power dissipation: 110W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DPAK
Drain-source voltage: 75V
Drain current: 53A
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 110W; DPAK
Power dissipation: 110W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DPAK
Drain-source voltage: 75V
Drain current: 53A
Type of transistor: N-MOSFET
товар відсутній
| IDW15G120C5BFKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 7.5Ax2; 200W; tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 7.5A x2
Power dissipation: 200W
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Kind of package: tube
Max. forward impulse current: 160A
Max. forward voltage: 1.4V
Leakage current: 8µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 7.5Ax2; 200W; tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 7.5A x2
Power dissipation: 200W
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Kind of package: tube
Max. forward impulse current: 160A
Max. forward voltage: 1.4V
Leakage current: 8µA
на замовлення 208 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 577.75 грн |
| IDW20G120C5BFKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 250W; tube
Case: PG-TO247-3
Mounting: THT
Technology: CoolSiC™ 5G; SiC
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 180A
Leakage current: 12µA
Max. off-state voltage: 1.2kV
Power dissipation: 250W
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 1.4V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 250W; tube
Case: PG-TO247-3
Mounting: THT
Technology: CoolSiC™ 5G; SiC
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 180A
Leakage current: 12µA
Max. off-state voltage: 1.2kV
Power dissipation: 250W
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 1.4V
товар відсутній
| IDW20G65C5BXKSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 130W; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Technology: CoolSiC™ 5G; SiC
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 46A
Leakage current: 2µA
Max. off-state voltage: 650V
Power dissipation: 130W
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 1.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 130W; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Technology: CoolSiC™ 5G; SiC
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 46A
Leakage current: 2µA
Max. off-state voltage: 650V
Power dissipation: 130W
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 1.8V
товар відсутній
| IPD50P03P4L11ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -42A; 58W
Drain-source voltage: -30V
Drain current: -42A
On-state resistance: 10.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Case: PG-TO252-3-11
Mounting: SMD
Technology: OptiMOS® -P2
Kind of channel: enhanced
Gate-source voltage: -5...16V
Pulsed drain current: -200A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -42A; 58W
Drain-source voltage: -30V
Drain current: -42A
On-state resistance: 10.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Case: PG-TO252-3-11
Mounting: SMD
Technology: OptiMOS® -P2
Kind of channel: enhanced
Gate-source voltage: -5...16V
Pulsed drain current: -200A
товар відсутній
| IPD50P04P413ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -45A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -45A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPD50P04P4L11ATMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Polarisation: unipolar
Power dissipation: 58W
Type of transistor: P-MOSFET
On-state resistance: 10.6mΩ
Drain current: -40A
Gate charge: 14nC
Drain-source voltage: -40V
Technology: OptiMOS® -P2
Kind of channel: enhanced
Gate-source voltage: -16...5V
Case: PG-TO252-3-313
Pulsed drain current: -200A
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Polarisation: unipolar
Power dissipation: 58W
Type of transistor: P-MOSFET
On-state resistance: 10.6mΩ
Drain current: -40A
Gate charge: 14nC
Drain-source voltage: -40V
Technology: OptiMOS® -P2
Kind of channel: enhanced
Gate-source voltage: -16...5V
Case: PG-TO252-3-313
Pulsed drain current: -200A
Mounting: SMD
товар відсутній
| IPD50R399CPATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPD50R399CPBTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPD50R500CEAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Pulsed drain current: 24A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Pulsed drain current: 24A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPD50R520CPATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPD50R520CPBTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPD50R950CEATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.3A; 34W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.3A
Power dissipation: 34W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.3A; 34W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.3A
Power dissipation: 34W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| TD120N16SOFHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V
Case: BG-SB20-1
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Max. off-state voltage: 1.6kV
Max. load current: 190A
Max. forward voltage: 1.75V
Load current: 120A
Semiconductor structure: double series
Gate current: 100mA
Max. forward impulse current: 2.25kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V
Case: BG-SB20-1
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Max. off-state voltage: 1.6kV
Max. load current: 190A
Max. forward voltage: 1.75V
Load current: 120A
Semiconductor structure: double series
Gate current: 100mA
Max. forward impulse current: 2.25kA
товар відсутній
| TT120N16SOFHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 120A; BG-SB20-1; screw
Case: BG-SB20-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.75V
Load current: 120A
Semiconductor structure: double series
Gate current: 100mA
Max. forward impulse current: 2.25kA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 120A; BG-SB20-1; screw
Case: BG-SB20-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.75V
Load current: 120A
Semiconductor structure: double series
Gate current: 100mA
Max. forward impulse current: 2.25kA
товар відсутній