Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136448) > Сторінка 1209 з 2275
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IPD031N06L3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3 Power dissipation: 167W Case: PG-TO252-3 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 100A On-state resistance: 3.1mΩ кількість в упаковці: 1 шт |
на замовлення 1421 шт: термін постачання 14-21 дні (днів) |
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IPD034N06N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3 Power dissipation: 167W Case: PG-TO252-3 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 100A On-state resistance: 3.4mΩ кількість в упаковці: 1 шт |
на замовлення 1243 шт: термін постачання 14-21 дні (днів) |
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IPD038N06N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO252-3 Power dissipation: 188W Case: PG-TO252-3 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 90A On-state resistance: 3.8mΩ кількість в упаковці: 1 шт |
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IPD040N03LGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3 Power dissipation: 94W Case: PG-TO252-3 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 79A On-state resistance: 4mΩ кількість в упаковці: 1 шт |
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IPD042P03L3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -280A; 150W Case: PG-TO252-3 Mounting: SMD Power dissipation: 150W Polarisation: unipolar Technology: OptiMOS™ P3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -280A Drain-source voltage: -30V Drain current: -70A On-state resistance: 6.8mΩ Type of transistor: P-MOSFET кількість в упаковці: 2500 шт |
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IPD050N03LGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3 Power dissipation: 68W Case: PG-TO252-3 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 50A On-state resistance: 5mΩ кількість в упаковці: 1 шт |
на замовлення 2347 шт: термін постачання 14-21 дні (днів) |
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IPD053N06NATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3 Power dissipation: 83W Case: PG-TO252-3 Mounting: SMD Drain-source voltage: 60V Drain current: 45A On-state resistance: 5.3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 2500 шт |
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IPD060N03LGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3 Power dissipation: 56W Case: PG-TO252-3 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 43A On-state resistance: 6mΩ кількість в упаковці: 1 шт |
на замовлення 92 шт: термін постачання 14-21 дні (днів) |
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IPD068P03L3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO252-3 Type of transistor: P-MOSFET Power dissipation: 100W Drain current: -70A Polarisation: unipolar Drain-source voltage: -30V On-state resistance: 11mΩ Mounting: SMD Technology: OptiMOS™ P3 кількість в упаковці: 1 шт |
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IPD075N03LGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3 Power dissipation: 47W Case: PG-TO252-3 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 35A On-state resistance: 7.5mΩ кількість в упаковці: 1 шт |
на замовлення 2491 шт: термін постачання 14-21 дні (днів) |
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IPD082N10N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3 Power dissipation: 125W Case: PG-TO252-3 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 80A On-state resistance: 8.2mΩ кількість в упаковці: 1 шт |
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IPD090N03LGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3 Power dissipation: 42W Case: PG-TO252-3 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 30A On-state resistance: 9mΩ кількість в упаковці: 1 шт |
на замовлення 2482 шт: термін постачання 14-21 дні (днів) |
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IPD110N12N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 54A; Idm: 300A; 136W Power dissipation: 136W Case: PG-TO252-3 Mounting: SMD Technology: OptiMOS™ 3 Drain-source voltage: 120V Drain current: 54A On-state resistance: 11mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A кількість в упаковці: 2500 шт |
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IPD12CN10NGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 67A Power dissipation: 125W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 12.4mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2153 шт: термін постачання 14-21 дні (днів) |
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IPD135N03LGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3 Power dissipation: 31W Case: PG-TO252-3 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 21A On-state resistance: 13.5mΩ кількість в упаковці: 1 шт |
на замовлення 882 шт: термін постачання 14-21 дні (днів) |
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IPD200N15N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W Power dissipation: 150W Case: PG-TO252-3 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A Drain-source voltage: 150V Drain current: 40A On-state resistance: 20mΩ кількість в упаковці: 1 шт |
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IPD25CN10NGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 140A; 71W Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Pulsed drain current: 140A Power dissipation: 71W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD25N06S4L30ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Pulsed drain current: 92A Power dissipation: 29W Case: PG-TO252-3-11 Gate-source voltage: ±16V On-state resistance: 30mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD26N06S2L35ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 22A; Idm: 120A; 68W; PG-TO252-3 Polarisation: unipolar Kind of package: reel Power dissipation: 68W Type of transistor: N-MOSFET On-state resistance: 35mΩ Drain current: 22A Gate charge: 10nC Drain-source voltage: 55V Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO252-3 Pulsed drain current: 120A Mounting: SMD кількість в упаковці: 2500 шт |
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IPD30N03S4L09ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 30A; 42W Polarisation: unipolar Power dissipation: 42W Type of transistor: N-MOSFET On-state resistance: 9mΩ Drain current: 30A Gate charge: 15nC Drain-source voltage: 30V Technology: OptiMOS™ T2 Kind of channel: enhanced Gate-source voltage: ±16V Case: PG-TO252-3 Mounting: SMD кількість в упаковці: 2500 шт |
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IPD30N08S222ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 30A; 136W; PG-TO252-3 Polarisation: unipolar Power dissipation: 136W Type of transistor: N-MOSFET On-state resistance: 21.5mΩ Drain current: 30A Gate charge: 44nC Drain-source voltage: 75V Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO252-3 Mounting: SMD кількість в упаковці: 1 шт |
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IPD30N08S2L21ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 75V; 30A; Idm: 120A; 136W Type of transistor: N-MOSFET Technology: OptiMOS® Polarisation: unipolar Drain-source voltage: 75V Drain current: 30A Pulsed drain current: 120A Power dissipation: 136W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 20.5mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD30N10S3L34ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 20A; Idm: 120A Type of transistor: N-MOSFET Technology: OptiMOS® -T Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Pulsed drain current: 120A Power dissipation: 57W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD33CN10NGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 108A; 58W Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Pulsed drain current: 108A Power dissipation: 58W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD350N06LGBTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 116A; 68W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 116A Power dissipation: 68W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 13nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1417 шт: термін постачання 14-21 дні (днів) |
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IPD35N10S3L26ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A Type of transistor: N-MOSFET Technology: OptiMOS® -T Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Pulsed drain current: 140A Power dissipation: 71W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD50N04S408ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 47A Pulsed drain current: 200A Power dissipation: 46W Case: PG-TO252-3-313 Gate-source voltage: ±20V On-state resistance: 7.9mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD50N04S4L08ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 49A; Idm: 200A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 49A Pulsed drain current: 200A Power dissipation: 46W Case: PG-TO252-3-313 Gate-source voltage: -16...20V On-state resistance: 7.3mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD50N06S409ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 47A Pulsed drain current: 200A Power dissipation: 71W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD50N06S4L08ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 47A Pulsed drain current: 200A Power dissipation: 71W Case: PG-TO252-3-11 Gate-source voltage: ±16V On-state resistance: 7.8mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD50N06S4L12ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W Type of transistor: N-MOSFET Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Power dissipation: 50W Case: PG-TO252-3 Gate-source voltage: ±16V On-state resistance: 12mΩ Mounting: SMD Gate charge: 30nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2164 шт: термін постачання 14-21 дні (днів) |
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IPD50N10S3L16ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A Case: PG-TO252-3-11 Type of transistor: N-MOSFET Power dissipation: 100W Drain current: 38A Polarisation: unipolar Drain-source voltage: 100V On-state resistance: 15mΩ Mounting: SMD Technology: OptiMOS® -T кількість в упаковці: 2500 шт |
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IPD50P03P4L11ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -42A; 58W Drain-source voltage: -30V Drain current: -42A On-state resistance: 10.5mΩ Type of transistor: P-MOSFET Power dissipation: 58W Polarisation: unipolar Case: PG-TO252-3-11 Mounting: SMD Technology: OptiMOS® -P2 Kind of channel: enhanced Gate-source voltage: -5...16V Pulsed drain current: -200A кількість в упаковці: 2500 шт |
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IPD50P04P413ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W Type of transistor: P-MOSFET Technology: OptiMOS® -P2 Polarisation: unipolar Drain-source voltage: -40V Drain current: -45A Pulsed drain current: -200A Power dissipation: 58W Case: PG-TO252-3-313 Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD50P04P4L11ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W Polarisation: unipolar Power dissipation: 58W Type of transistor: P-MOSFET On-state resistance: 10.6mΩ Drain current: -40A Gate charge: 14nC Drain-source voltage: -40V Technology: OptiMOS® -P2 Kind of channel: enhanced Gate-source voltage: -16...5V Case: PG-TO252-3-313 Pulsed drain current: -200A Mounting: SMD кількість в упаковці: 1 шт |
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IPD50R399CPATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 9A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.399Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD50R399CPBTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 9A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.399Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD50R500CEAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.8A Pulsed drain current: 24A Power dissipation: 57W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 18.7nC Kind of package: reel Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD50R520CPATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.1A Power dissipation: 66W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.52Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD50R520CPBTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.1A Power dissipation: 66W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.52Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD50R950CEATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 4.3A; 34W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.3A Power dissipation: 34W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD5N25S3430ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 4A; Idm: 20A; 41W Mounting: SMD Drain-source voltage: 250V Drain current: 4A On-state resistance: 0.43Ω Type of transistor: N-MOSFET Power dissipation: 41W Polarisation: unipolar Technology: OptiMOS™ T Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A Case: PG-TO252-3-313 кількість в упаковці: 2500 шт |
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IPD600N25N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 18A; Idm: 100A; 136W Power dissipation: 136W Case: PG-TO252-3 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Drain-source voltage: 250V Drain current: 18A On-state resistance: 60mΩ кількість в упаковці: 2500 шт |
товар відсутній |
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IPD60R170CFD7 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 76W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 76W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.325Ω Mounting: SMD Gate charge: 28nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IPD60R1K0PFD7SAUMA1 | INFINEON TECHNOLOGIES |
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товар відсутній |
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IPD60R1K5PFD7SAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 2.2A; Idm: 6A Case: TO252 Mounting: SMD On-state resistance: 2.892Ω Gate-source voltage: ±20V Pulsed drain current: 6A Power dissipation: 22W Polarisation: unipolar Technology: CoolMOS™ PFD7 Features of semiconductor devices: ESD protected gate Drain current: 2.2A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET кількість в упаковці: 2500 шт |
товар відсутній |
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IPD60R210PFD7SAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 10A; Idm: 42A Mounting: SMD Power dissipation: 64W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 386mΩ Drain current: 10A Drain-source voltage: 600V Case: TO252 Technology: CoolMOS™ PFD7 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 42A кількість в упаковці: 2500 шт |
товар відсутній |
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IPD60R280CFD7 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 51W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.536Ω Mounting: SMD Gate charge: 18nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IPD60R280P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3 Polarisation: unipolar Power dissipation: 53W Type of transistor: N-MOSFET On-state resistance: 0.28Ω Drain current: 8A Features of semiconductor devices: ESD protected gate Gate charge: 18nC Drain-source voltage: 600V Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO252-3 Mounting: SMD кількість в упаковці: 1 шт |
на замовлення 2458 шт: термін постачання 14-21 дні (днів) |
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IPD60R280P7S | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3 Polarisation: unipolar Power dissipation: 53W Type of transistor: N-MOSFET On-state resistance: 0.28Ω Drain current: 8A Features of semiconductor devices: ESD protected gate Gate charge: 18nC Drain-source voltage: 600V Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO252-3 Mounting: SMD кількість в упаковці: 1 шт |
товар відсутній |
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IPD60R280PFD7SAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 7A; Idm: 31A Technology: CoolMOS™ PFD7 Mounting: SMD Power dissipation: 51W Features of semiconductor devices: ESD protected gate Case: TO252 Polarisation: unipolar Drain current: 7A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 549mΩ Pulsed drain current: 31A кількість в упаковці: 2500 шт |
товар відсутній |
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IPD60R2K0C6ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 1.5A; Idm: 6A; 22.3W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.5A Pulsed drain current: 6A Power dissipation: 22.3W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
товар відсутній |
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IPD60R2K0PFD7SAUMA1 | INFINEON TECHNOLOGIES |
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товар відсутній |
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IPD60R360P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 41W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 13nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 2500 шт |
товар відсутній |
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IPD60R360PFD7SAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A Type of transistor: N-MOSFET Technology: CoolMOS™ PFD7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Pulsed drain current: 24A Power dissipation: 43W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 715mΩ Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 2500 шт |
товар відсутній |
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IPD60R380C6ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; Idm: 30A; 83W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.7A Pulsed drain current: 30A Power dissipation: 83W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
товар відсутній |
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IPD60R385CPATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A Pulsed drain current: 27A Power dissipation: 83W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 0.385Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
товар відсутній |
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IPD60R3K3C6ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; Idm: 4A; 18.1W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.1A Pulsed drain current: 4A Power dissipation: 18.1W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 3.3Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
товар відсутній |
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IPD60R400CEAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.3A Pulsed drain current: 30A Power dissipation: 112W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
товар відсутній |
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IPD60R600C6ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 19A; 63W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.6A Pulsed drain current: 19A Power dissipation: 63W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
товар відсутній |
IPD031N06L3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Power dissipation: 167W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.1mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Power dissipation: 167W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.1mΩ
кількість в упаковці: 1 шт
на замовлення 1421 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 169.02 грн |
5+ | 146.5 грн |
9+ | 117.27 грн |
25+ | 111.1 грн |
500+ | 106.69 грн |
IPD034N06N3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Power dissipation: 167W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.4mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Power dissipation: 167W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.4mΩ
кількість в упаковці: 1 шт
на замовлення 1243 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 141.49 грн |
10+ | 114.46 грн |
12+ | 87.29 грн |
33+ | 82 грн |
500+ | 79.36 грн |
IPD038N06N3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO252-3
Power dissipation: 188W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 90A
On-state resistance: 3.8mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO252-3
Power dissipation: 188W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 90A
On-state resistance: 3.8mΩ
кількість в упаковці: 1 шт
товар відсутній
IPD040N03LGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Power dissipation: 94W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 79A
On-state resistance: 4mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Power dissipation: 94W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 79A
On-state resistance: 4mΩ
кількість в упаковці: 1 шт
товар відсутній
IPD042P03L3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -280A; 150W
Case: PG-TO252-3
Mounting: SMD
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ P3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -280A
Drain-source voltage: -30V
Drain current: -70A
On-state resistance: 6.8mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -280A; 150W
Case: PG-TO252-3
Mounting: SMD
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ P3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -280A
Drain-source voltage: -30V
Drain current: -70A
On-state resistance: 6.8mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 2500 шт
товар відсутній
IPD050N03LGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Power dissipation: 68W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 50A
On-state resistance: 5mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Power dissipation: 68W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 50A
On-state resistance: 5mΩ
кількість в упаковці: 1 шт
на замовлення 2347 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 71.22 грн |
6+ | 52.19 грн |
25+ | 44.35 грн |
27+ | 38.53 грн |
75+ | 36.42 грн |
500+ | 35.89 грн |
IPD053N06NATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3
Power dissipation: 83W
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 60V
Drain current: 45A
On-state resistance: 5.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3
Power dissipation: 83W
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 60V
Drain current: 45A
On-state resistance: 5.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 2500 шт
товар відсутній
IPD060N03LGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Power dissipation: 56W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 43A
On-state resistance: 6mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Power dissipation: 56W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 43A
On-state resistance: 6mΩ
кількість в упаковці: 1 шт
на замовлення 92 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 76.91 грн |
5+ | 54.94 грн |
29+ | 36.5 грн |
79+ | 34.56 грн |
500+ | 33.68 грн |
IPD068P03L3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Type of transistor: P-MOSFET
Power dissipation: 100W
Drain current: -70A
Polarisation: unipolar
Drain-source voltage: -30V
On-state resistance: 11mΩ
Mounting: SMD
Technology: OptiMOS™ P3
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Type of transistor: P-MOSFET
Power dissipation: 100W
Drain current: -70A
Polarisation: unipolar
Drain-source voltage: -30V
On-state resistance: 11mΩ
Mounting: SMD
Technology: OptiMOS™ P3
кількість в упаковці: 1 шт
товар відсутній
IPD075N03LGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Power dissipation: 47W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 35A
On-state resistance: 7.5mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Power dissipation: 47W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 35A
On-state resistance: 7.5mΩ
кількість в упаковці: 1 шт
на замовлення 2491 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 90.21 грн |
6+ | 52.47 грн |
10+ | 40.56 грн |
30+ | 35.18 грн |
82+ | 33.24 грн |
1000+ | 32.8 грн |
IPD082N10N3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3
Power dissipation: 125W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 80A
On-state resistance: 8.2mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3
Power dissipation: 125W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 80A
On-state resistance: 8.2mΩ
кількість в упаковці: 1 шт
товар відсутній
IPD090N03LGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Power dissipation: 42W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 30A
On-state resistance: 9mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Power dissipation: 42W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 30A
On-state resistance: 9mΩ
кількість в упаковці: 1 шт
на замовлення 2482 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 61.72 грн |
35+ | 31.5 грн |
94+ | 28.66 грн |
500+ | 27.69 грн |
IPD110N12N3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 54A; Idm: 300A; 136W
Power dissipation: 136W
Case: PG-TO252-3
Mounting: SMD
Technology: OptiMOS™ 3
Drain-source voltage: 120V
Drain current: 54A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 54A; Idm: 300A; 136W
Power dissipation: 136W
Case: PG-TO252-3
Mounting: SMD
Technology: OptiMOS™ 3
Drain-source voltage: 120V
Drain current: 54A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
кількість в упаковці: 2500 шт
товар відсутній
IPD12CN10NGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2153 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 118.7 грн |
5+ | 104.38 грн |
14+ | 79.36 грн |
37+ | 74.95 грн |
500+ | 71.42 грн |
IPD135N03LGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Power dissipation: 31W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 21A
On-state resistance: 13.5mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Power dissipation: 31W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 21A
On-state resistance: 13.5mΩ
кількість в упаковці: 1 шт
на замовлення 882 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 80.71 грн |
8+ | 37.91 грн |
25+ | 32.18 грн |
38+ | 27.95 грн |
103+ | 26.45 грн |
500+ | 26.01 грн |
IPD200N15N3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W
Power dissipation: 150W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Drain-source voltage: 150V
Drain current: 40A
On-state resistance: 20mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W
Power dissipation: 150W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Drain-source voltage: 150V
Drain current: 40A
On-state resistance: 20mΩ
кількість в упаковці: 1 шт
товар відсутній
IPD25CN10NGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 140A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 71W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 140A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 71W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD25N06S4L30ATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD26N06S2L35ATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 22A; Idm: 120A; 68W; PG-TO252-3
Polarisation: unipolar
Kind of package: reel
Power dissipation: 68W
Type of transistor: N-MOSFET
On-state resistance: 35mΩ
Drain current: 22A
Gate charge: 10nC
Drain-source voltage: 55V
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Pulsed drain current: 120A
Mounting: SMD
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 22A; Idm: 120A; 68W; PG-TO252-3
Polarisation: unipolar
Kind of package: reel
Power dissipation: 68W
Type of transistor: N-MOSFET
On-state resistance: 35mΩ
Drain current: 22A
Gate charge: 10nC
Drain-source voltage: 55V
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Pulsed drain current: 120A
Mounting: SMD
кількість в упаковці: 2500 шт
товар відсутній
IPD30N03S4L09ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 30A; 42W
Polarisation: unipolar
Power dissipation: 42W
Type of transistor: N-MOSFET
On-state resistance: 9mΩ
Drain current: 30A
Gate charge: 15nC
Drain-source voltage: 30V
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: PG-TO252-3
Mounting: SMD
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 30A; 42W
Polarisation: unipolar
Power dissipation: 42W
Type of transistor: N-MOSFET
On-state resistance: 9mΩ
Drain current: 30A
Gate charge: 15nC
Drain-source voltage: 30V
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: PG-TO252-3
Mounting: SMD
кількість в упаковці: 2500 шт
товар відсутній
IPD30N08S222ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 30A; 136W; PG-TO252-3
Polarisation: unipolar
Power dissipation: 136W
Type of transistor: N-MOSFET
On-state resistance: 21.5mΩ
Drain current: 30A
Gate charge: 44nC
Drain-source voltage: 75V
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 30A; 136W; PG-TO252-3
Polarisation: unipolar
Power dissipation: 136W
Type of transistor: N-MOSFET
On-state resistance: 21.5mΩ
Drain current: 30A
Gate charge: 44nC
Drain-source voltage: 75V
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
IPD30N08S2L21ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 75V; 30A; Idm: 120A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 136W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 75V; 30A; Idm: 120A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 136W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD30N10S3L34ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 20A; Idm: 120A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 120A
Power dissipation: 57W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 20A; Idm: 120A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 120A
Power dissipation: 57W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD33CN10NGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 108A; 58W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 108A
Power dissipation: 58W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 108A; 58W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 108A
Power dissipation: 58W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD350N06LGBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 116A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 116A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 116A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 116A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1417 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 67.42 грн |
7+ | 41.2 грн |
25+ | 35.01 грн |
35+ | 30.24 грн |
94+ | 28.66 грн |
500+ | 28.48 грн |
IPD35N10S3L26ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD50N04S408ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD50N04S4L08ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 49A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: -16...20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 49A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: -16...20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD50N06S409ATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD50N06S4L08ATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD50N06S4L12ATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 50W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 50W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2164 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 102.55 грн |
5+ | 67.03 грн |
20+ | 52.2 грн |
55+ | 49.38 грн |
500+ | 47.79 грн |
IPD50N10S3L16ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Case: PG-TO252-3-11
Type of transistor: N-MOSFET
Power dissipation: 100W
Drain current: 38A
Polarisation: unipolar
Drain-source voltage: 100V
On-state resistance: 15mΩ
Mounting: SMD
Technology: OptiMOS® -T
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Case: PG-TO252-3-11
Type of transistor: N-MOSFET
Power dissipation: 100W
Drain current: 38A
Polarisation: unipolar
Drain-source voltage: 100V
On-state resistance: 15mΩ
Mounting: SMD
Technology: OptiMOS® -T
кількість в упаковці: 2500 шт
товар відсутній
IPD50P03P4L11ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -42A; 58W
Drain-source voltage: -30V
Drain current: -42A
On-state resistance: 10.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Case: PG-TO252-3-11
Mounting: SMD
Technology: OptiMOS® -P2
Kind of channel: enhanced
Gate-source voltage: -5...16V
Pulsed drain current: -200A
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -42A; 58W
Drain-source voltage: -30V
Drain current: -42A
On-state resistance: 10.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Case: PG-TO252-3-11
Mounting: SMD
Technology: OptiMOS® -P2
Kind of channel: enhanced
Gate-source voltage: -5...16V
Pulsed drain current: -200A
кількість в упаковці: 2500 шт
товар відсутній
IPD50P04P413ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -45A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -45A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD50P04P4L11ATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Polarisation: unipolar
Power dissipation: 58W
Type of transistor: P-MOSFET
On-state resistance: 10.6mΩ
Drain current: -40A
Gate charge: 14nC
Drain-source voltage: -40V
Technology: OptiMOS® -P2
Kind of channel: enhanced
Gate-source voltage: -16...5V
Case: PG-TO252-3-313
Pulsed drain current: -200A
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Polarisation: unipolar
Power dissipation: 58W
Type of transistor: P-MOSFET
On-state resistance: 10.6mΩ
Drain current: -40A
Gate charge: 14nC
Drain-source voltage: -40V
Technology: OptiMOS® -P2
Kind of channel: enhanced
Gate-source voltage: -16...5V
Case: PG-TO252-3-313
Pulsed drain current: -200A
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
IPD50R399CPATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPD50R399CPBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPD50R500CEAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Pulsed drain current: 24A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Pulsed drain current: 24A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPD50R520CPATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPD50R520CPBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPD50R950CEATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.3A; 34W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.3A
Power dissipation: 34W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.3A; 34W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.3A
Power dissipation: 34W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPD5N25S3430ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 4A; Idm: 20A; 41W
Mounting: SMD
Drain-source voltage: 250V
Drain current: 4A
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Technology: OptiMOS™ T
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Case: PG-TO252-3-313
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 4A; Idm: 20A; 41W
Mounting: SMD
Drain-source voltage: 250V
Drain current: 4A
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Technology: OptiMOS™ T
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Case: PG-TO252-3-313
кількість в упаковці: 2500 шт
товар відсутній
IPD600N25N3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 18A; Idm: 100A; 136W
Power dissipation: 136W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Drain-source voltage: 250V
Drain current: 18A
On-state resistance: 60mΩ
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 18A; Idm: 100A; 136W
Power dissipation: 136W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Drain-source voltage: 250V
Drain current: 18A
On-state resistance: 60mΩ
кількість в упаковці: 2500 шт
товар відсутній
IPD60R170CFD7 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 76W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 76W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 76W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 76W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPD60R1K0PFD7SAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
IPD60R1K0PFD7S SMD N channel transistors
IPD60R1K0PFD7S SMD N channel transistors
товар відсутній
IPD60R1K5PFD7SAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 2.2A; Idm: 6A
Case: TO252
Mounting: SMD
On-state resistance: 2.892Ω
Gate-source voltage: ±20V
Pulsed drain current: 6A
Power dissipation: 22W
Polarisation: unipolar
Technology: CoolMOS™ PFD7
Features of semiconductor devices: ESD protected gate
Drain current: 2.2A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 2.2A; Idm: 6A
Case: TO252
Mounting: SMD
On-state resistance: 2.892Ω
Gate-source voltage: ±20V
Pulsed drain current: 6A
Power dissipation: 22W
Polarisation: unipolar
Technology: CoolMOS™ PFD7
Features of semiconductor devices: ESD protected gate
Drain current: 2.2A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
товар відсутній
IPD60R210PFD7SAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 10A; Idm: 42A
Mounting: SMD
Power dissipation: 64W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 386mΩ
Drain current: 10A
Drain-source voltage: 600V
Case: TO252
Technology: CoolMOS™ PFD7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 42A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 10A; Idm: 42A
Mounting: SMD
Power dissipation: 64W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 386mΩ
Drain current: 10A
Drain-source voltage: 600V
Case: TO252
Technology: CoolMOS™ PFD7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 42A
кількість в упаковці: 2500 шт
товар відсутній
IPD60R280CFD7 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 51W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.536Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 51W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.536Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPD60R280P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3
Polarisation: unipolar
Power dissipation: 53W
Type of transistor: N-MOSFET
On-state resistance: 0.28Ω
Drain current: 8A
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Drain-source voltage: 600V
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3
Polarisation: unipolar
Power dissipation: 53W
Type of transistor: N-MOSFET
On-state resistance: 0.28Ω
Drain current: 8A
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Drain-source voltage: 600V
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Mounting: SMD
кількість в упаковці: 1 шт
на замовлення 2458 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 105.4 грн |
5+ | 90.65 грн |
25+ | 80.24 грн |
IPD60R280P7S |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3
Polarisation: unipolar
Power dissipation: 53W
Type of transistor: N-MOSFET
On-state resistance: 0.28Ω
Drain current: 8A
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Drain-source voltage: 600V
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3
Polarisation: unipolar
Power dissipation: 53W
Type of transistor: N-MOSFET
On-state resistance: 0.28Ω
Drain current: 8A
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Drain-source voltage: 600V
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
IPD60R280PFD7SAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 7A; Idm: 31A
Technology: CoolMOS™ PFD7
Mounting: SMD
Power dissipation: 51W
Features of semiconductor devices: ESD protected gate
Case: TO252
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 549mΩ
Pulsed drain current: 31A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 7A; Idm: 31A
Technology: CoolMOS™ PFD7
Mounting: SMD
Power dissipation: 51W
Features of semiconductor devices: ESD protected gate
Case: TO252
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 549mΩ
Pulsed drain current: 31A
кількість в упаковці: 2500 шт
товар відсутній
IPD60R2K0C6ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.5A; Idm: 6A; 22.3W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 22.3W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.5A; Idm: 6A; 22.3W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 22.3W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD60R2K0PFD7SAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
IPD60R2K0PFD7S SMD N channel transistors
IPD60R2K0PFD7S SMD N channel transistors
товар відсутній
IPD60R360P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2500 шт
товар відсутній
IPD60R360PFD7SAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 43W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 715mΩ
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 43W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 715mΩ
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2500 шт
товар відсутній
IPD60R380C6ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; Idm: 30A; 83W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.7A
Pulsed drain current: 30A
Power dissipation: 83W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; Idm: 30A; 83W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.7A
Pulsed drain current: 30A
Power dissipation: 83W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD60R385CPATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Pulsed drain current: 27A
Power dissipation: 83W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Pulsed drain current: 27A
Power dissipation: 83W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD60R3K3C6ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; Idm: 4A; 18.1W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.1A
Pulsed drain current: 4A
Power dissipation: 18.1W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; Idm: 4A; 18.1W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.1A
Pulsed drain current: 4A
Power dissipation: 18.1W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD60R400CEAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.3A
Pulsed drain current: 30A
Power dissipation: 112W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.3A
Pulsed drain current: 30A
Power dissipation: 112W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD60R600C6ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 19A; 63W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 19A
Power dissipation: 63W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 19A; 63W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 19A
Power dissipation: 63W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній