IPD60R280P7S INFINEON TECHNOLOGIES
Виробник: INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3
Polarisation: unipolar
Power dissipation: 53W
Type of transistor: N-MOSFET
On-state resistance: 0.28Ω
Drain current: 8A
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Drain-source voltage: 600V
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Mounting: SMD
кількість в упаковці: 1 шт
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Технічний опис IPD60R280P7S INFINEON TECHNOLOGIES
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3, Polarisation: unipolar, Power dissipation: 53W, Type of transistor: N-MOSFET, On-state resistance: 0.28Ω, Drain current: 8A, Features of semiconductor devices: ESD protected gate, Gate charge: 18nC, Drain-source voltage: 600V, Technology: CoolMOS™ P7, Kind of channel: enhanced, Gate-source voltage: ±20V, Case: PG-TO252-3, Mounting: SMD, кількість в упаковці: 1 шт.
Інші пропозиції IPD60R280P7S
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IPD60R280P7S | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3 Polarisation: unipolar Power dissipation: 53W Type of transistor: N-MOSFET On-state resistance: 0.28Ω Drain current: 8A Features of semiconductor devices: ESD protected gate Gate charge: 18nC Drain-source voltage: 600V Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO252-3 Mounting: SMD |
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