![FS150R17PE4BOSA1 FS150R17PE4BOSA1](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2205/FS150R12KT4.jpg)
FS150R17PE4BOSA1 Infineon Technologies
![Infineon-FS150R17PE4-DS-v02_01-en_de.pdf?fileId=db3a3043243b5f170124d8a320187393](/images/adobe-acrobat.png)
Description: IGBT MOD 1700V 150A 835W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 835 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 20681.73 грн |
Відгуки про товар
Написати відгук
Технічний опис FS150R17PE4BOSA1 Infineon Technologies
Description: IGBT MOD 1700V 150A 835W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 835 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V.
Інші пропозиції FS150R17PE4BOSA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
FS150R17PE4BOSA1 | Виробник : Infineon Technologies |
![]() |
товар відсутній |
|
![]() |
FS150R17PE4BOSA1 | Виробник : Infineon Technologies |
![]() |
товар відсутній |
|
FS150R17PE4BOSA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Technology: EconoPACK™ 4 Topology: IGBT three-phase bridge; NTC thermistor Case: AG-ECONO4-1 кількість в упаковці: 1 шт |
товар відсутній |
||
FS150R17PE4BOSA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Technology: EconoPACK™ 4 Topology: IGBT three-phase bridge; NTC thermistor Case: AG-ECONO4-1 |
товар відсутній |