![IPZA60R024P7XKSA1 IPZA60R024P7XKSA1](https://www.mouser.com/images/infineon/lrg/TO_247_4_DSL.jpg)
на замовлення 62 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 1393.18 грн |
10+ | 1261.73 грн |
100+ | 927.07 грн |
480+ | 808.29 грн |
1200+ | 801.96 грн |
2640+ | 788.61 грн |
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Технічний опис IPZA60R024P7XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 101A TO247-4-3, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 101A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 42A, 10V, Power Dissipation (Max): 291W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.03mA, Supplier Device Package: PG-TO247-4-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7144 pF @ 400 V.
Інші пропозиції IPZA60R024P7XKSA1
Фото | Назва | Виробник | Інформація |
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IPZA60R024P7XKSA1 | Виробник : Infineon Technologies |
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товар відсутній |
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IPZA60R024P7XKSA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 63A; Idm: 386A; 291W Case: PG-TO247-4 Mounting: THT Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 164nC Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 386A Drain-source voltage: 650V Drain current: 63A On-state resistance: 24mΩ Type of transistor: N-MOSFET Power dissipation: 291W Polarisation: unipolar кількість в упаковці: 1 шт |
товар відсутній |
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IPZA60R024P7XKSA1 | Виробник : Infineon Technologies |
![]() |
товар відсутній |
|
![]() |
IPZA60R024P7XKSA1 | Виробник : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 101A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 42A, 10V Power Dissipation (Max): 291W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.03mA Supplier Device Package: PG-TO247-4-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7144 pF @ 400 V |
товар відсутній |
|
IPZA60R024P7XKSA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 63A; Idm: 386A; 291W Case: PG-TO247-4 Mounting: THT Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 164nC Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 386A Drain-source voltage: 650V Drain current: 63A On-state resistance: 24mΩ Type of transistor: N-MOSFET Power dissipation: 291W Polarisation: unipolar |
товар відсутній |