Технічний опис IPP70N10S312AKSA1 Infineon Technologies
Description: MOSFET N-CH 100V 70A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 83µA, Supplier Device Package: PG-TO220-3-1, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V.
Інші пропозиції IPP70N10S312AKSA1
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IPP70N10S312AKSA1 | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 100V 70A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 83µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V |
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IPP70N10S312AKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 100V; 48A; 125W Type of transistor: N-MOSFET Technology: OptiMOS™ T Polarisation: unipolar Drain-source voltage: 100V Drain current: 48A Power dissipation: 125W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 11.3mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced |
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