Технічний опис IRFU6215PBF Infineon / IR
Description: MOSFET P-CH 150V 13A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: IPAK (TO-251AA), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V.
Інші пропозиції IRFU6215PBF
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRFU6215PBF Код товару: 101060 |
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товар відсутній
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IRFU6215PBF | Виробник : Infineon Technologies |
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товар відсутній |
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IRFU6215PBF | Виробник : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK (TO-251AA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V |
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IRFU6215PBF | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; IPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -13A Power dissipation: 110W Case: IPAK Mounting: THT Kind of channel: enhanced |
товар відсутній |