Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5702) > Сторінка 95 з 96
| Фото | Назва | Виробник | Інформація |
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| G3F40MT12K | GeneSiC Semiconductor | 1200V 40m TO-247-4 G3F SiC MOSFET |
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| G3F20MT12K | GeneSiC Semiconductor | 1200V 20m TO-247-4 G3F SiC MOSFET |
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G3R160MT12D | GeneSiC SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W Mounting: THT Type of transistor: N-MOSFET Power dissipation: 123W Polarisation: unipolar Kind of package: tube Gate charge: 28nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 40A Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 16A On-state resistance: 0.16Ω |
на замовлення 932 шт: термін постачання 21-30 дні (днів) |
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G3R20MT12K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W Drain-source voltage: 1.2kV Drain current: 90A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 542W Polarisation: unipolar Kind of package: tube Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 219nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 240A Case: TO247-4 |
на замовлення 598 шт: термін постачання 21-30 дні (днів) |
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G3R30MT12K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W Drain-source voltage: 1.2kV Drain current: 63A On-state resistance: 30mΩ Type of transistor: N-MOSFET Power dissipation: 400W Polarisation: unipolar Kind of package: tube Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 155nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 200A Case: TO247-4 |
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G3R40MT12K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W Drain-source voltage: 1.2kV Drain current: 50A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 333W Polarisation: unipolar Kind of package: tube Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 106nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 140A Case: TO247-4 |
на замовлення 303 шт: термін постачання 21-30 дні (днів) |
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G3R75MT12K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W Drain-source voltage: 1.2kV Drain current: 29A On-state resistance: 75mΩ Type of transistor: N-MOSFET Power dissipation: 207W Polarisation: unipolar Kind of package: tube Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 54nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 80A Case: TO247-4 |
на замовлення 529 шт: термін постачання 21-30 дні (днів) |
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GB20SLT12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-2 Max. off-state voltage: 1.2kV Max. forward voltage: 1.5V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 160A |
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GC02MPS12-220 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Case: TO220-2 Max. off-state voltage: 1.2kV Max. forward voltage: 1.5V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 16A |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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GC15MPS12-220 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220-2; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Case: TO220-2 Max. off-state voltage: 1.2kV Max. forward voltage: 1.5V Load current: 15A Semiconductor structure: single diode Max. forward impulse current: 120A |
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GC08MPS12-220 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220-2; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Case: TO220-2 Max. off-state voltage: 1.2kV Max. forward voltage: 1.5V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 60A |
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GC10MPS12-220 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Case: TO220-2 Max. off-state voltage: 1.2kV Max. forward voltage: 1.5V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 80A |
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GC20MPS12-220 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Case: TO220-2 Max. off-state voltage: 1.2kV Max. forward voltage: 1.5V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 160A |
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GD10MPS12A | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO220-2; tube Max. off-state voltage: 1.2kV Max. load current: 33A Load current: 16A Case: TO220-2 Mounting: THT Kind of package: tube Max. forward impulse current: 64A Semiconductor structure: single diode Features of semiconductor devices: MPS Type of diode: Schottky rectifying Max. forward voltage: 1.9V Technology: SiC |
на замовлення 47 шт: термін постачання 21-30 дні (днів) |
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GD20MPS12A | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 29A Max. load current: 67A Semiconductor structure: single diode Features of semiconductor devices: MPS Case: TO220-2 Kind of package: tube Max. forward impulse current: 128A Max. forward voltage: 1.9V |
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GB05MPS33-263 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 5A; TO263-7; tube Case: TO263-7 Mounting: SMD Kind of package: tube Technology: SiC Features of semiconductor devices: MPS Max. off-state voltage: 3.3kV Load current: 5A Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 40A Max. forward voltage: 2.4V |
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GB01SLT06-214 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; DO214; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 1A Semiconductor structure: single diode Case: DO214 Max. forward voltage: 1.5V Max. forward impulse current: 7A Kind of package: reel; tape |
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GAP3SLT33-214 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 300mA; DO214 Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 3.3kV Load current: 0.3A Semiconductor structure: single diode Case: DO214 Max. forward voltage: 1.15V Max. forward impulse current: 1A Kind of package: reel; tape |
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GB01SLT12-214 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; DO214; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 1A Semiconductor structure: single diode Case: DO214 Max. forward voltage: 1.5V Max. forward impulse current: 8A Kind of package: reel; tape |
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GB02SLT12-214 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; DO214; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: DO214 Max. forward voltage: 1.5V Max. forward impulse current: 16A Kind of package: reel; tape |
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GD2X100MPS06N | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 650V Load current: 108A x2 Case: SOT227B Max. forward voltage: 1.8V Max. forward impulse current: 440A Electrical mounting: screw Max. load current: 231A Mechanical mounting: screw Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Reverse recovery time: 10ns |
на замовлення 84 шт: термін постачання 21-30 дні (днів) |
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G3R40MT12D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W Mounting: THT Type of transistor: N-MOSFET Power dissipation: 333W Polarisation: unipolar Kind of package: tube Gate charge: 106nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 140A Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 50A On-state resistance: 40mΩ |
на замовлення 1133 шт: термін постачання 21-30 дні (днів) |
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G3R75MT12D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 29A Pulsed drain current: 80A Power dissipation: 207W Case: TO247-3 Gate-source voltage: -5...15V On-state resistance: 75mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhanced |
на замовлення 281 шт: термін постачання 21-30 дні (днів) |
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G2R120MT33J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; TO263-7 Technology: G2R™; SiC Mounting: SMD Features of semiconductor devices: Kelvin terminal Case: TO263-7 Kind of package: tube Drain-source voltage: 3.3kV On-state resistance: 0.12Ω Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced |
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G3R160MT17J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 15A; Idm: 48A; 187W Mounting: SMD Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 51nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 48A Type of transistor: N-MOSFET On-state resistance: 0.16Ω Drain current: 15A Drain-source voltage: 1.7kV Case: TO263-7 Power dissipation: 187W Polarisation: unipolar |
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G3R350MT12D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 16A Power dissipation: 74W Case: TO247-3 Gate-source voltage: -5...15V On-state resistance: 0.35Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced |
на замовлення 457 шт: термін постачання 21-30 дні (днів) |
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GC2X20MPS12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube Mounting: THT Kind of package: tube Features of semiconductor devices: MPS Technology: SiC Case: TO247-3 Max. off-state voltage: 1.2kV Max. load current: 40A Max. forward voltage: 1.5V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 160A Type of diode: Schottky rectifying |
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G2R1000MT17D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 53W; TO247-3 Mounting: THT Case: TO247-3 Polarisation: unipolar Pulsed drain current: 8A Drain-source voltage: 1.7kV Drain current: 4A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 53W Kind of package: tube Technology: G2R™; SiC Kind of channel: enhanced Gate-source voltage: -5...20V |
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G2R1000MT17J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7 Mounting: SMD Case: TO263-7 Kind of package: tube Drain current: 4A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 54W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Technology: G2R™; SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 8A Drain-source voltage: 1.7kV |
на замовлення 926 шт: термін постачання 21-30 дні (днів) |
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G2R1000MT33J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 4A; Idm: 8A; 74W; TO263-7 Mounting: SMD Case: TO263-7 Power dissipation: 74W Kind of package: tube Drain-source voltage: 3.3kV Drain current: 4A On-state resistance: 1Ω Type of transistor: N-MOSFET Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 21nC Technology: G2R™; SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 8A |
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G3R20MT12N | GeneSiC SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 74A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 20mΩ Pulsed drain current: 240A Power dissipation: 365W Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Mechanical mounting: screw |
на замовлення 123 шт: термін постачання 21-30 дні (днів) |
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GD30MPS06A | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 33A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 33A Max. load current: 86A Semiconductor structure: single diode Features of semiconductor devices: MPS Max. forward voltage: 1.8V Case: TO220-2 Kind of package: tube Max. forward impulse current: 168A |
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GE04MPS06A | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 7A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 7A Max. load current: 11A Semiconductor structure: single diode Features of semiconductor devices: MPS Max. forward voltage: 1.75V Case: TO220-2 Kind of package: tube Max. forward impulse current: 22A |
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GE06MPS06A | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Features of semiconductor devices: MPS Max. forward voltage: 1.25V Case: TO220-2 Kind of package: tube Max. forward impulse current: 27A |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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GE08MPS06A | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: MPS Max. forward voltage: 1.25V Case: TO220-2 Kind of package: tube Max. forward impulse current: 36A |
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GE10MPS06A | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: MPS Max. forward voltage: 1.25V Case: TO220-2 Kind of package: tube Max. forward impulse current: 44A |
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GB50SLT12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 50A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: TO247-2 Kind of package: tube Max. forward impulse current: 0.4kA |
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G3R350MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 75W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 16A Power dissipation: 75W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 0.35Ω Mounting: SMD Gate charge: 12nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
на замовлення 960 шт: термін постачання 21-30 дні (днів) |
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GB01SLT12-252 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 1A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: TO252-2 Kind of package: reel; tape Max. forward impulse current: 8A |
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GB02SLT12-252 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: TO252-2 Kind of package: reel; tape Max. forward impulse current: 16A |
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GC2X10MPS12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 1.2kV Max. load current: 20A Max. forward voltage: 1.5V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 80A |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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GC2X5MPS12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 1.2kV Max. load current: 10A Max. forward voltage: 1.5V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 40A |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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G3R450MT17D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 6A Pulsed drain current: 16A Power dissipation: 88W Case: TO247-3 Gate-source voltage: -5...15V On-state resistance: 0.45Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced |
на замовлення 550 шт: термін постачання 21-30 дні (днів) |
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G3R160MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 128W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 16A Pulsed drain current: 40A Power dissipation: 128W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 28nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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G3R30MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 68A Pulsed drain current: 200A Power dissipation: 459W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 30mΩ Mounting: SMD Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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G3R40MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 53A Pulsed drain current: 140A Power dissipation: 374W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 40mΩ Mounting: SMD Gate charge: 106nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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G3R75MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Pulsed drain current: 80A Power dissipation: 224W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 75mΩ Mounting: SMD Gate charge: 54nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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| GD2X30MPS06D | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 30Ax2; TO247-3; tube Mounting: THT Max. off-state voltage: 650V Max. load current: 88A Max. forward voltage: 1.8V Load current: 30A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 168A Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Case: TO247-3 |
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GD2X30MPS06N | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw Type of module: diode Max. off-state voltage: 650V Max. load current: 60A Max. forward voltage: 1.5V Load current: 30A x2 Semiconductor structure: double independent Reverse recovery time: 10ns Max. forward impulse current: 168A Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: MPS Technology: SiC Case: SOT227B |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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GD2X30MPS12N | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 30Ax2; SOT227B; screw Type of module: diode Max. off-state voltage: 1.2kV Max. load current: 60A Max. forward voltage: 1.5V Load current: 30A x2 Semiconductor structure: double independent Reverse recovery time: 10ns Max. forward impulse current: 240A Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: MPS Technology: SiC Case: SOT227B |
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GB10MPS17-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube Technology: SiC Case: TO247-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.7kV Features of semiconductor devices: MPS Type of diode: Schottky rectifying Max. forward voltage: 1.5V Load current: 10A Max. forward impulse current: 87A |
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G3R20MT17K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 88A; Idm: 300A; 809W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 88A Pulsed drain current: 300A Power dissipation: 809W Case: TO247-4 Gate-source voltage: -5...15V On-state resistance: 20mΩ Mounting: THT Gate charge: 400nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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GB2X100MPS12-227 | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 200A Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 100A x2 Case: SOT227B Max. forward voltage: 1.5V Max. forward impulse current: 800A Electrical mounting: screw Max. load current: 200A Mechanical mounting: screw Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Reverse recovery time: 10ns |
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GC2X100MPS06-227 | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 650V; If: 100Ax2; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 650V Load current: 100A x2 Case: SOT227B Max. forward voltage: 1.5V Max. forward impulse current: 640A Electrical mounting: screw Max. load current: 200A Mechanical mounting: screw Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Reverse recovery time: 10ns |
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| GD2X100MPS12N | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 420A Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 100A x2 Case: SOT227B Max. forward voltage: 1.9V Max. forward impulse current: 800A Electrical mounting: screw Max. load current: 420A Mechanical mounting: screw Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Reverse recovery time: 10ns |
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| GD2X20MPS12D | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27Ax2; TO247-3; tube Mounting: THT Kind of package: tube Features of semiconductor devices: MPS Technology: SiC Case: TO247-3 Max. off-state voltage: 1.2kV Max. load current: 67A Max. forward voltage: 1.9V Load current: 27A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 128A Type of diode: Schottky rectifying |
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G3R45MT17D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 43A Pulsed drain current: 160A Power dissipation: 438W Case: TO247-3 Gate-source voltage: -5...15V On-state resistance: 45mΩ Mounting: THT Gate charge: 182nC Kind of package: tube Kind of channel: enhanced |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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GC2X8MPS12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; tube Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 1.2kV Max. load current: 16A Max. forward voltage: 1.5V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 60A |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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GC2X15MPS12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 1.2kV Max. load current: 30A Max. forward voltage: 1.5V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 120A |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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G3R20MT17N | GeneSiC SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.7kV Drain current: 70A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 20mΩ Pulsed drain current: 300A Power dissipation: 523W Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Mechanical mounting: screw |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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| G3R160MT12D |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 123W
Polarisation: unipolar
Kind of package: tube
Gate charge: 28nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 40A
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 16A
On-state resistance: 0.16Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 123W
Polarisation: unipolar
Kind of package: tube
Gate charge: 28nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 40A
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 16A
On-state resistance: 0.16Ω
на замовлення 932 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 581.1 грн |
| 3+ | 373.39 грн |
| 7+ | 352.89 грн |
| 600+ | 338.25 грн |
| G3R20MT12K |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W
Drain-source voltage: 1.2kV
Drain current: 90A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 542W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 219nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 240A
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W
Drain-source voltage: 1.2kV
Drain current: 90A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 542W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 219nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 240A
Case: TO247-4
на замовлення 598 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2283.38 грн |
| 30+ | 2103.45 грн |
| 120+ | 2039.02 грн |
| G3R30MT12K |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W
Drain-source voltage: 1.2kV
Drain current: 63A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 155nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 200A
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W
Drain-source voltage: 1.2kV
Drain current: 63A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 155nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 200A
Case: TO247-4
товар відсутній
| G3R40MT12K |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Drain-source voltage: 1.2kV
Drain current: 50A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 333W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 106nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 140A
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Drain-source voltage: 1.2kV
Drain current: 50A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 333W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 106nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 140A
Case: TO247-4
на замовлення 303 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1169.29 грн |
| 3+ | 1026.46 грн |
| 120+ | 1010.36 грн |
| G3R75MT12K |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Drain-source voltage: 1.2kV
Drain current: 29A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 207W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 54nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 80A
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Drain-source voltage: 1.2kV
Drain current: 29A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 207W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 54nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 80A
Case: TO247-4
на замовлення 529 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 938.27 грн |
| 2+ | 639.16 грн |
| 4+ | 604.75 грн |
| 30+ | 604.02 грн |
| 120+ | 581.32 грн |
| GB20SLT12-247 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 160A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 160A
товар відсутній
| GC02MPS12-220 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 16A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 16A
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.48 грн |
| 5+ | 166.93 грн |
| 7+ | 130.32 грн |
| GC15MPS12-220 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 120A
товар відсутній
| GC08MPS12-220 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 60A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 60A
товар відсутній
| GC10MPS12-220 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 80A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 80A
товар відсутній
| GC20MPS12-220 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 160A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 160A
товар відсутній
| GD10MPS12A |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO220-2; tube
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 16A
Case: TO220-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 64A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Max. forward voltage: 1.9V
Technology: SiC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO220-2; tube
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 16A
Case: TO220-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 64A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Max. forward voltage: 1.9V
Technology: SiC
на замовлення 47 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 313.81 грн |
| 4+ | 207.2 грн |
| 11+ | 195.48 грн |
| GD20MPS12A |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 29A
Max. load current: 67A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 128A
Max. forward voltage: 1.9V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 29A
Max. load current: 67A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 128A
Max. forward voltage: 1.9V
товар відсутній
| GB05MPS33-263 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 5A; TO263-7; tube
Case: TO263-7
Mounting: SMD
Kind of package: tube
Technology: SiC
Features of semiconductor devices: MPS
Max. off-state voltage: 3.3kV
Load current: 5A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Max. forward voltage: 2.4V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 5A; TO263-7; tube
Case: TO263-7
Mounting: SMD
Kind of package: tube
Technology: SiC
Features of semiconductor devices: MPS
Max. off-state voltage: 3.3kV
Load current: 5A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Max. forward voltage: 2.4V
товар відсутній
| GB01SLT06-214 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; DO214; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 1A
Semiconductor structure: single diode
Case: DO214
Max. forward voltage: 1.5V
Max. forward impulse current: 7A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; DO214; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 1A
Semiconductor structure: single diode
Case: DO214
Max. forward voltage: 1.5V
Max. forward impulse current: 7A
Kind of package: reel; tape
товар відсутній
| GAP3SLT33-214 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 300mA; DO214
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 3.3kV
Load current: 0.3A
Semiconductor structure: single diode
Case: DO214
Max. forward voltage: 1.15V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 300mA; DO214
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 3.3kV
Load current: 0.3A
Semiconductor structure: single diode
Case: DO214
Max. forward voltage: 1.15V
Max. forward impulse current: 1A
Kind of package: reel; tape
товар відсутній
| GB01SLT12-214 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; DO214; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 1A
Semiconductor structure: single diode
Case: DO214
Max. forward voltage: 1.5V
Max. forward impulse current: 8A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; DO214; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 1A
Semiconductor structure: single diode
Case: DO214
Max. forward voltage: 1.5V
Max. forward impulse current: 8A
Kind of package: reel; tape
товар відсутній
| GB02SLT12-214 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; DO214; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: DO214
Max. forward voltage: 1.5V
Max. forward impulse current: 16A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; DO214; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: DO214
Max. forward voltage: 1.5V
Max. forward impulse current: 16A
Kind of package: reel; tape
товар відсутній
| GD2X100MPS06N |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 108A x2
Case: SOT227B
Max. forward voltage: 1.8V
Max. forward impulse current: 440A
Electrical mounting: screw
Max. load current: 231A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 108A x2
Case: SOT227B
Max. forward voltage: 1.8V
Max. forward impulse current: 440A
Electrical mounting: screw
Max. load current: 231A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
на замовлення 84 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3296.56 грн |
| 3+ | 3014.23 грн |
| 10+ | 2968.11 грн |
| 25+ | 2943.95 грн |
| G3R40MT12D |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 333W
Polarisation: unipolar
Kind of package: tube
Gate charge: 106nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 140A
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 50A
On-state resistance: 40mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 333W
Polarisation: unipolar
Kind of package: tube
Gate charge: 106nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 140A
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 50A
On-state resistance: 40mΩ
на замовлення 1133 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1068.37 грн |
| 3+ | 938.61 грн |
| 30+ | 925.43 грн |
| 120+ | 899.07 грн |
| G3R75MT12D |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 29A
Pulsed drain current: 80A
Power dissipation: 207W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 29A
Pulsed drain current: 80A
Power dissipation: 207W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 281 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 860.21 грн |
| 2+ | 648.68 грн |
| 4+ | 613.54 грн |
| 30+ | 590.11 грн |
| G2R120MT33J |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; TO263-7
Technology: G2R™; SiC
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Case: TO263-7
Kind of package: tube
Drain-source voltage: 3.3kV
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; TO263-7
Technology: G2R™; SiC
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Case: TO263-7
Kind of package: tube
Drain-source voltage: 3.3kV
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
товар відсутній
| G3R160MT17J |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 15A; Idm: 48A; 187W
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 51nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 48A
Type of transistor: N-MOSFET
On-state resistance: 0.16Ω
Drain current: 15A
Drain-source voltage: 1.7kV
Case: TO263-7
Power dissipation: 187W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 15A; Idm: 48A; 187W
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 51nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 48A
Type of transistor: N-MOSFET
On-state resistance: 0.16Ω
Drain current: 15A
Drain-source voltage: 1.7kV
Case: TO263-7
Power dissipation: 187W
Polarisation: unipolar
товар відсутній
| G3R350MT12D |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 457 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 401.33 грн |
| 3+ | 336.05 грн |
| 4+ | 267.96 грн |
| 9+ | 253.32 грн |
| GC2X20MPS12-247 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Mounting: THT
Kind of package: tube
Features of semiconductor devices: MPS
Technology: SiC
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 40A
Max. forward voltage: 1.5V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 160A
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Mounting: THT
Kind of package: tube
Features of semiconductor devices: MPS
Technology: SiC
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 40A
Max. forward voltage: 1.5V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 160A
Type of diode: Schottky rectifying
товар відсутній
| G2R1000MT17D |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 53W; TO247-3
Mounting: THT
Case: TO247-3
Polarisation: unipolar
Pulsed drain current: 8A
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 53W
Kind of package: tube
Technology: G2R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 53W; TO247-3
Mounting: THT
Case: TO247-3
Polarisation: unipolar
Pulsed drain current: 8A
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 53W
Kind of package: tube
Technology: G2R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
товар відсутній
| G2R1000MT17J |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7
Mounting: SMD
Case: TO263-7
Kind of package: tube
Drain current: 4A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Technology: G2R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 8A
Drain-source voltage: 1.7kV
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7
Mounting: SMD
Case: TO263-7
Kind of package: tube
Drain current: 4A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Technology: G2R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 8A
Drain-source voltage: 1.7kV
на замовлення 926 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 428.13 грн |
| 3+ | 353.62 грн |
| 7+ | 334.59 грн |
| 10+ | 329.46 грн |
| 50+ | 321.41 грн |
| G2R1000MT33J |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 4A; Idm: 8A; 74W; TO263-7
Mounting: SMD
Case: TO263-7
Power dissipation: 74W
Kind of package: tube
Drain-source voltage: 3.3kV
Drain current: 4A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 21nC
Technology: G2R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 4A; Idm: 8A; 74W; TO263-7
Mounting: SMD
Case: TO263-7
Power dissipation: 74W
Kind of package: tube
Drain-source voltage: 3.3kV
Drain current: 4A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 21nC
Technology: G2R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 8A
товар відсутній
| G3R20MT12N |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 74A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 240A
Power dissipation: 365W
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 74A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 240A
Power dissipation: 365W
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Mechanical mounting: screw
на замовлення 123 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3544.13 грн |
| 3+ | 3207.52 грн |
| GD30MPS06A |
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 33A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 33A
Max. load current: 86A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.8V
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 168A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 33A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 33A
Max. load current: 86A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.8V
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 168A
товар відсутній
| GE04MPS06A |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 7A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 7A
Max. load current: 11A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.75V
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 22A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 7A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 7A
Max. load current: 11A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.75V
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 22A
товар відсутній
| GE06MPS06A |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.25V
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 27A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.25V
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 27A
на замовлення 16 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 150.6 грн |
| 5+ | 125.93 грн |
| 9+ | 96.64 грн |
| GE08MPS06A |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.25V
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 36A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.25V
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 36A
товар відсутній
| GE10MPS06A |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.25V
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 44A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.25V
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 44A
товар відсутній
| GB50SLT12-247 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 0.4kA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 0.4kA
товар відсутній
| G3R350MT12J |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 75W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 75W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 75W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 75W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
на замовлення 960 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 380.04 грн |
| 3+ | 302.38 грн |
| 8+ | 286.27 грн |
| GB01SLT12-252 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO252-2
Kind of package: reel; tape
Max. forward impulse current: 8A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO252-2
Kind of package: reel; tape
Max. forward impulse current: 8A
товар відсутній
| GB02SLT12-252 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO252-2
Kind of package: reel; tape
Max. forward impulse current: 16A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO252-2
Kind of package: reel; tape
Max. forward impulse current: 16A
товар відсутній
| GC2X10MPS12-247 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 20A
Max. forward voltage: 1.5V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 80A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 20A
Max. forward voltage: 1.5V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 80A
на замовлення 13 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 795.56 грн |
| 2+ | 513.96 грн |
| 5+ | 486.14 грн |
| GC2X5MPS12-247 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 10A
Max. forward voltage: 1.5V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 40A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 10A
Max. forward voltage: 1.5V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 40A
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 481.75 грн |
| 3+ | 311.16 грн |
| 8+ | 294.32 грн |
| G3R450MT17D |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 88W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 88W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 550 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 488.85 грн |
| 3+ | 369 грн |
| 7+ | 349.23 грн |
| 120+ | 342.64 грн |
| G3R160MT12J |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 128W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 128W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 128W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 128W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
| G3R30MT12J |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 68A
Pulsed drain current: 200A
Power dissipation: 459W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 68A
Pulsed drain current: 200A
Power dissipation: 459W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
| G3R40MT12J |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 53A
Pulsed drain current: 140A
Power dissipation: 374W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 53A
Pulsed drain current: 140A
Power dissipation: 374W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
| G3R75MT12J |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 80A
Power dissipation: 224W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 80A
Power dissipation: 224W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
| GD2X30MPS06D |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30Ax2; TO247-3; tube
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 88A
Max. forward voltage: 1.8V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 168A
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30Ax2; TO247-3; tube
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 88A
Max. forward voltage: 1.8V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 168A
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO247-3
товар відсутній
| GD2X30MPS06N |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw
Type of module: diode
Max. off-state voltage: 650V
Max. load current: 60A
Max. forward voltage: 1.5V
Load current: 30A x2
Semiconductor structure: double independent
Reverse recovery time: 10ns
Max. forward impulse current: 168A
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Case: SOT227B
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw
Type of module: diode
Max. off-state voltage: 650V
Max. load current: 60A
Max. forward voltage: 1.5V
Load current: 30A x2
Semiconductor structure: double independent
Reverse recovery time: 10ns
Max. forward impulse current: 168A
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Case: SOT227B
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1599 грн |
| 2+ | 1403.52 грн |
| GD2X30MPS12N |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 30Ax2; SOT227B; screw
Type of module: diode
Max. off-state voltage: 1.2kV
Max. load current: 60A
Max. forward voltage: 1.5V
Load current: 30A x2
Semiconductor structure: double independent
Reverse recovery time: 10ns
Max. forward impulse current: 240A
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Case: SOT227B
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 30Ax2; SOT227B; screw
Type of module: diode
Max. off-state voltage: 1.2kV
Max. load current: 60A
Max. forward voltage: 1.5V
Load current: 30A x2
Semiconductor structure: double independent
Reverse recovery time: 10ns
Max. forward impulse current: 240A
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Case: SOT227B
товар відсутній
| GB10MPS17-247 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Max. forward voltage: 1.5V
Load current: 10A
Max. forward impulse current: 87A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Max. forward voltage: 1.5V
Load current: 10A
Max. forward impulse current: 87A
товар відсутній
| G3R20MT17K |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 88A; Idm: 300A; 809W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 88A
Pulsed drain current: 300A
Power dissipation: 809W
Case: TO247-4
Gate-source voltage: -5...15V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 88A; Idm: 300A; 809W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 88A
Pulsed drain current: 300A
Power dissipation: 809W
Case: TO247-4
Gate-source voltage: -5...15V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
| GB2X100MPS12-227 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 200A
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 800A
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 200A
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 800A
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
товар відсутній
| GC2X100MPS06-227 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 100Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 640A
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 100Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 640A
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
товар відсутній
| GD2X100MPS12N |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 420A
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.9V
Max. forward impulse current: 800A
Electrical mounting: screw
Max. load current: 420A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 420A
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.9V
Max. forward impulse current: 800A
Electrical mounting: screw
Max. load current: 420A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
товар відсутній
| GD2X20MPS12D |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27Ax2; TO247-3; tube
Mounting: THT
Kind of package: tube
Features of semiconductor devices: MPS
Technology: SiC
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 67A
Max. forward voltage: 1.9V
Load current: 27A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 128A
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27Ax2; TO247-3; tube
Mounting: THT
Kind of package: tube
Features of semiconductor devices: MPS
Technology: SiC
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 67A
Max. forward voltage: 1.9V
Load current: 27A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 128A
Type of diode: Schottky rectifying
товар відсутній
| G3R45MT17D |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 43A
Pulsed drain current: 160A
Power dissipation: 438W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 43A
Pulsed drain current: 160A
Power dissipation: 438W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2325.17 грн |
| 2+ | 2041.21 грн |
| GC2X8MPS12-247 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 16A
Max. forward voltage: 1.5V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 60A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 16A
Max. forward voltage: 1.5V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 60A
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 633.13 грн |
| 3+ | 406.34 грн |
| 6+ | 384.38 грн |
| GC2X15MPS12-247 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 30A
Max. forward voltage: 1.5V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 120A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 30A
Max. forward voltage: 1.5V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 120A
на замовлення 21 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 977.69 грн |
| 2+ | 628.18 грн |
| 4+ | 593.77 грн |
| G3R20MT17N |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 70A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 300A
Power dissipation: 523W
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 70A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 300A
Power dissipation: 523W
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8744.04 грн |