Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5727) > Сторінка 9 з 96

Обрати Сторінку:   [  << Попередня Сторінка ]  1 4 5 6 7 8 9 10 11 12 13 14 18 27 36 45 54 63 72 81 90 96  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
GBPC35010T GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 1KV 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBPC3501T GBPC3501T GeneSiC Semiconductor gbpc35005t.pdf Description: BRIDGE RECT 1PHASE 100V 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
GBPC3502T GBPC3502T GeneSiC Semiconductor gbpc35005t.pdf Description: BRIDGE RECT 1P 200V 35A GBPC-T
Packaging: Bulk
Package / Case: 4-Square, GBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-T
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 439 шт:
термін постачання 21-31 дні (днів)
1+330.7 грн
10+ 255.51 грн
25+ 234.11 грн
100+ 192.53 грн
250+ 176.42 грн
GBPC3504T GBPC3504T GeneSiC Semiconductor gbpc35005t.pdf Description: BRIDGE RECT 1P 400V 35A GBPC-T
Packaging: Bulk
Package / Case: 4-Square, GBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-T
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
1+330.7 грн
10+ 255.51 грн
25+ 234.11 грн
100+ 192.53 грн
250+ 176.42 грн
GBPC3506T GeneSiC Semiconductor gbpc3506t.pdf Description: BRIDGE RECT 1PHASE 600V 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
GBPC3508T GeneSiC Semiconductor gbpc3506t.pdf Description: BRIDGE RECT 1PHASE 800V 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBPC50005T GeneSiC Semiconductor gbpc50005t.pdf Description: BRIDGE RECT 1PHASE 50V 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
GBPC5010T GeneSiC Semiconductor gbpc5006t.pdf Description: BRIDGE RECT 1PHASE 1KV 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBPC5001T GeneSiC Semiconductor gbpc50005t.pdf Description: BRIDGE RECT 1PHASE 100V 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
GBPC5002T GeneSiC Semiconductor gbpc50005t.pdf Description: BRIDGE RECT 1PHASE 200V 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
GBPC5004T GeneSiC Semiconductor gbpc50005t.pdf Description: BRIDGE RECT 1PHASE 400V 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
GBPC5006T GeneSiC Semiconductor gbpc5006t.pdf Description: BRIDGE RECT 1PHASE 600V 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
GBPC5008T GeneSiC Semiconductor gbpc5006t.pdf Description: BRIDGE RECT 1PHASE 800V 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBU10D GBU10D GeneSiC Semiconductor gbu10a.pdf Description: BRIDGE 1-PH GBU 200V 10A 150C
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 7510 шт:
термін постачання 21-31 дні (днів)
3+118.28 грн
10+ 80.63 грн
25+ 70.28 грн
100+ 53.64 грн
250+ 46.82 грн
500+ 42.23 грн
1000+ 37.47 грн
2500+ 32.64 грн
Мінімальне замовлення: 3
GBU10M GeneSiC Semiconductor gbu10j.pdf Description: BRIDGE 1-PH GBU 1000V 10A 150C
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 7497 шт:
термін постачання 21-31 дні (днів)
3+116.72 грн
10+ 79.58 грн
25+ 69.36 грн
100+ 52.92 грн
250+ 46.19 грн
500+ 41.66 грн
1000+ 36.97 грн
2500+ 32.2 грн
Мінімальне замовлення: 3
GBU15A GeneSiC Semiconductor gbu15a.pdf Description: BRIDGE RECT 1PHASE 50V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
GBU15B GeneSiC Semiconductor gbu15a.pdf Description: BRIDGE RECT 1PHASE 100V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
GBU15D GeneSiC Semiconductor gbu15a.pdf Description: BRIDGE RECT 1PHASE 200V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
GBU15G GeneSiC Semiconductor gbu15a.pdf Description: BRIDGE RECT 1PHASE 400V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
GBU15J GeneSiC Semiconductor gbu15j.pdf Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
GBU15K GeneSiC Semiconductor gbu15j.pdf Description: BRIDGE RECT 1PHASE 800V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBU15M GeneSiC Semiconductor gbu15j.pdf Description: BRIDGE RECT 1PHASE 1KV 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBU6J GBU6J GeneSiC Semiconductor gbu6j.pdf Description: BRIDGE RECT 1PHASE 600V 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 7048 шт:
термін постачання 21-31 дні (днів)
3+109.72 грн
10+ 73.96 грн
25+ 64.05 грн
100+ 48.43 грн
250+ 41.94 грн
500+ 37.65 грн
1000+ 33.2 грн
2500+ 28.73 грн
Мінімальне замовлення: 3
GBU8J GBU8J GeneSiC Semiconductor gbu8j.pdf Description: BRIDGE RECT 1PHASE 600V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 4755 шт:
термін постачання 21-31 дні (днів)
3+109.72 грн
10+ 74.48 грн
25+ 64.74 грн
100+ 49.14 грн
250+ 42.7 грн
500+ 38.4 грн
1000+ 33.98 грн
2500+ 29.51 грн
Мінімальне замовлення: 3
GKN130/04 GeneSiC Semiconductor gkn13004_thru_gkn13018.pdf Description: DIODE GEN PURP 400V 165A DO205AA
товар відсутній
GKN130/08 GeneSiC Semiconductor gkn13004_thru_gkn13018.pdf Description: DIODE GEN PURP 800V 165A DO205AA
товар відсутній
GKN130/12 GeneSiC Semiconductor gkn13004_thru_gkn13018.pdf Description: DIODE GEN PURP 1.2KV 165A DO205
товар відсутній
GKN130/14 GeneSiC Semiconductor gkn13004_thru_gkn13018.pdf Description: DIODE GEN PURP 1.4KV 165A DO205
товар відсутній
GKN130/16 GeneSiC Semiconductor gkn13004.pdf Description: DIODE GEN PURP 1.6KV 165A DO205
товар відсутній
GKN240/04 GeneSiC Semiconductor gkn24004.pdf Description: DIODE GEN PURP 400V 320A DO205AB
товар відсутній
GKN240/08 GeneSiC Semiconductor gkn24004.pdf Description: DIODE GEN PURP 800V 320A DO205AB
товар відсутній
GKN240/12 GeneSiC Semiconductor gkn24004.pdf Description: DIODE GEN PURP 1.2KV 320A DO205
товар відсутній
GKN240/14 GeneSiC Semiconductor gkn24004.pdf Description: DIODE GEN PURP 1.4KV 320A DO205
товар відсутній
GKN240/16 GeneSiC Semiconductor gkn24004.pdf Description: DIODE GEN PURP 1.6KV 320A DO205
товар відсутній
GKN26/04 GeneSiC Semiconductor gkn2604_thru_gkn2616.pdf Description: DIODE GEN PURP 400V 25A DO4
товар відсутній
GKN26/08 GKN26/08 GeneSiC Semiconductor gkn2604_thru_gkn2616.pdf Description: DIODE GEN PURP 800V 25A DO4
товар відсутній
GKN26/12 GeneSiC Semiconductor gkn2604_thru_gkn2616.pdf Description: DIODE GEN PURP 1.2KV 25A DO4
товар відсутній
GKN26/14 GeneSiC Semiconductor gkn2604_thru_gkn2616.pdf Description: DIODE GEN PURP 1.4KV 25A DO4
товар відсутній
GKN26/16 GeneSiC Semiconductor gkn2604_thru_gkn2616.pdf Description: DIODE GEN PURP 1.6KV 25A DO4
товар відсутній
GKN71/04 GeneSiC Semiconductor gkn7104_thru_gkn7116.pdf Description: DIODE GEN PURP 400V 95A DO5
товар відсутній
GKN71/08 GeneSiC Semiconductor gkn7104_thru_gkn7116.pdf Description: DIODE GEN PURP 800V 95A DO5
товар відсутній
GKN71/12 GeneSiC Semiconductor gkn7104_thru_gkn7116.pdf Description: DIODE GEN PURP 1.2KV 95A DO5
товар відсутній
GKN71/14 GeneSiC Semiconductor gkn7104_thru_gkn7116.pdf Description: DIODE GEN PURP 1.4KV 95A DO5
товар відсутній
GKN71/16 GeneSiC Semiconductor gkn7104.pdf Description: DIODE GEN PURP 1.6KV 95A DO5
товар відсутній
GKR130/04 GeneSiC Semiconductor Description: DIODE GEN PURP 400V 165A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 165A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 22 mA @ 400 V
товар відсутній
GKR130/08 GeneSiC Semiconductor Description: DIODE GEN PURP 800V 165A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 165A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 22 mA @ 800 V
товар відсутній
GKR130/12 GeneSiC Semiconductor gkr13004_thru_gkr13018.pdf Description: DIODE GEN PURP 1.2KV 165A DO205
товар відсутній
GKR130/14 GeneSiC Semiconductor gkr13004_thru_gkr13018.pdf Description: DIODE GEN PURP 1.4KV 165A DO205
товар відсутній
GKR130/16 GeneSiC Semiconductor gkr13004.pdf Description: DIODE GEN PURP 1.6KV 165A DO205
товар відсутній
GKR240/04 GeneSiC Semiconductor gkr24004_thru_gkr24018.pdf Description: DIODE GEN PURP 400V 320A DO205AB
товар відсутній
GKR240/08 GeneSiC Semiconductor gkr24004_thru_gkr24018.pdf Description: DIODE GEN PURP 800V 320A DO205AB
товар відсутній
GKR240/12 GeneSiC Semiconductor gkr24004_thru_gkr24018.pdf Description: DIODE GEN PURP 1.2KV 320A DO205
товар відсутній
GKR240/14 GeneSiC Semiconductor gkr24004_thru_gkr24018.pdf Description: DIODE GEN PURP 1.4KV 320A DO205
товар відсутній
GKR240/16 GeneSiC Semiconductor gkr24004_thru_gkr24018.pdf Description: DIODE GEN PURP 1.6KV 320A DO205
товар відсутній
GKR26/04 GeneSiC Semiconductor GKR26.pdf Description: DIODE GEN PURP 400V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 60 A
Current - Reverse Leakage @ Vr: 4 mA @ 400 V
товар відсутній
GKR26/08 GeneSiC Semiconductor GKR26.pdf Description: DIODE GEN PURP 800V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 60 A
Current - Reverse Leakage @ Vr: 4 mA @ 800 V
товар відсутній
GKR26/12 GeneSiC Semiconductor gkr2604_thru_gkr2616.pdf Description: DIODE GEN PURP 1.2KV 25A DO4
товар відсутній
GKR26/14 GKR26/14 GeneSiC Semiconductor gkr2604_thru_gkr2616.pdf Description: DIODE GEN PURP 1.4KV 25A DO4
товар відсутній
GKR26/16 GeneSiC Semiconductor gkr2604_thru_gkr2616.pdf Description: DIODE GEN PURP 1.6KV 25A DO4
товар відсутній
GKR71/04 GeneSiC Semiconductor gkr7104_thru_gkr7116.pdf Description: DIODE GEN PURP 400V 95A DO5
товар відсутній
GBPC35010T
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBPC3501T gbpc35005t.pdf
GBPC3501T
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
GBPC3502T gbpc35005t.pdf
GBPC3502T
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 35A GBPC-T
Packaging: Bulk
Package / Case: 4-Square, GBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-T
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 439 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+330.7 грн
10+ 255.51 грн
25+ 234.11 грн
100+ 192.53 грн
250+ 176.42 грн
GBPC3504T gbpc35005t.pdf
GBPC3504T
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 35A GBPC-T
Packaging: Bulk
Package / Case: 4-Square, GBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-T
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+330.7 грн
10+ 255.51 грн
25+ 234.11 грн
100+ 192.53 грн
250+ 176.42 грн
GBPC3506T gbpc3506t.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
GBPC3508T gbpc3506t.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBPC50005T gbpc50005t.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
GBPC5010T gbpc5006t.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBPC5001T gbpc50005t.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
GBPC5002T gbpc50005t.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
GBPC5004T gbpc50005t.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
GBPC5006T gbpc5006t.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
GBPC5008T gbpc5006t.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBU10D gbu10a.pdf
GBU10D
Виробник: GeneSiC Semiconductor
Description: BRIDGE 1-PH GBU 200V 10A 150C
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 7510 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+118.28 грн
10+ 80.63 грн
25+ 70.28 грн
100+ 53.64 грн
250+ 46.82 грн
500+ 42.23 грн
1000+ 37.47 грн
2500+ 32.64 грн
Мінімальне замовлення: 3
GBU10M gbu10j.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE 1-PH GBU 1000V 10A 150C
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 7497 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+116.72 грн
10+ 79.58 грн
25+ 69.36 грн
100+ 52.92 грн
250+ 46.19 грн
500+ 41.66 грн
1000+ 36.97 грн
2500+ 32.2 грн
Мінімальне замовлення: 3
GBU15A gbu15a.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
GBU15B gbu15a.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
GBU15D gbu15a.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
GBU15G gbu15a.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
GBU15J gbu15j.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
GBU15K gbu15j.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBU15M gbu15j.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBU6J gbu6j.pdf
GBU6J
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 7048 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+109.72 грн
10+ 73.96 грн
25+ 64.05 грн
100+ 48.43 грн
250+ 41.94 грн
500+ 37.65 грн
1000+ 33.2 грн
2500+ 28.73 грн
Мінімальне замовлення: 3
GBU8J gbu8j.pdf
GBU8J
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 4755 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+109.72 грн
10+ 74.48 грн
25+ 64.74 грн
100+ 49.14 грн
250+ 42.7 грн
500+ 38.4 грн
1000+ 33.98 грн
2500+ 29.51 грн
Мінімальне замовлення: 3
GKN130/04 gkn13004_thru_gkn13018.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 165A DO205AA
товар відсутній
GKN130/08 gkn13004_thru_gkn13018.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 165A DO205AA
товар відсутній
GKN130/12 gkn13004_thru_gkn13018.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 165A DO205
товар відсутній
GKN130/14 gkn13004_thru_gkn13018.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.4KV 165A DO205
товар відсутній
GKN130/16 gkn13004.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.6KV 165A DO205
товар відсутній
GKN240/04 gkn24004.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 320A DO205AB
товар відсутній
GKN240/08 gkn24004.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 320A DO205AB
товар відсутній
GKN240/12 gkn24004.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 320A DO205
товар відсутній
GKN240/14 gkn24004.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.4KV 320A DO205
товар відсутній
GKN240/16 gkn24004.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.6KV 320A DO205
товар відсутній
GKN26/04 gkn2604_thru_gkn2616.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 25A DO4
товар відсутній
GKN26/08 gkn2604_thru_gkn2616.pdf
GKN26/08
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 25A DO4
товар відсутній
GKN26/12 gkn2604_thru_gkn2616.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 25A DO4
товар відсутній
GKN26/14 gkn2604_thru_gkn2616.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.4KV 25A DO4
товар відсутній
GKN26/16 gkn2604_thru_gkn2616.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.6KV 25A DO4
товар відсутній
GKN71/04 gkn7104_thru_gkn7116.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 95A DO5
товар відсутній
GKN71/08 gkn7104_thru_gkn7116.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 95A DO5
товар відсутній
GKN71/12 gkn7104_thru_gkn7116.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 95A DO5
товар відсутній
GKN71/14 gkn7104_thru_gkn7116.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.4KV 95A DO5
товар відсутній
GKN71/16 gkn7104.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.6KV 95A DO5
товар відсутній
GKR130/04
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 165A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 165A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 22 mA @ 400 V
товар відсутній
GKR130/08
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 165A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 165A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 22 mA @ 800 V
товар відсутній
GKR130/12 gkr13004_thru_gkr13018.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 165A DO205
товар відсутній
GKR130/14 gkr13004_thru_gkr13018.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.4KV 165A DO205
товар відсутній
GKR130/16 gkr13004.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.6KV 165A DO205
товар відсутній
GKR240/04 gkr24004_thru_gkr24018.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 320A DO205AB
товар відсутній
GKR240/08 gkr24004_thru_gkr24018.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 320A DO205AB
товар відсутній
GKR240/12 gkr24004_thru_gkr24018.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 320A DO205
товар відсутній
GKR240/14 gkr24004_thru_gkr24018.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.4KV 320A DO205
товар відсутній
GKR240/16 gkr24004_thru_gkr24018.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.6KV 320A DO205
товар відсутній
GKR26/04 GKR26.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 60 A
Current - Reverse Leakage @ Vr: 4 mA @ 400 V
товар відсутній
GKR26/08 GKR26.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 60 A
Current - Reverse Leakage @ Vr: 4 mA @ 800 V
товар відсутній
GKR26/12 gkr2604_thru_gkr2616.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 25A DO4
товар відсутній
GKR26/14 gkr2604_thru_gkr2616.pdf
GKR26/14
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.4KV 25A DO4
товар відсутній
GKR26/16 gkr2604_thru_gkr2616.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.6KV 25A DO4
товар відсутній
GKR71/04 gkr7104_thru_gkr7116.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 95A DO5
товар відсутній
Обрати Сторінку:   [  << Попередня Сторінка ]  1 4 5 6 7 8 9 10 11 12 13 14 18 27 36 45 54 63 72 81 90 96  [ Наступна Сторінка >> ]