Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5681) > Сторінка 1 з 95
| Фото | Назва | Виробник | Інформація |
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FR30G02 | GeneSiC Semiconductor |
 Description: DIODE GEN PURP 400V 30A DO5 |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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FR30GR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 400V 30A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 30A Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
на замовлення 244 шт: термін постачання 21-31 дні (днів) |
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FR40G02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 40A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 40A Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V |
на замовлення 56 шт: термін постачання 21-31 дні (днів) |
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MBR12035 CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 35V 120A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A Current - Reverse Leakage @ Vr: 3 mA @ 20 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 120 Voltage Coupled to Current - Reverse Leakage @ Vr: 20 |
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FR40GR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 400V 40A DO5 |
товар відсутній |
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MBR12040CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 40V 120A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A Current - Reverse Leakage @ Vr: 3 mA @ 20 V |
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MBR12040CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 40V 120A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A Current - Reverse Leakage @ Vr: 3 mA @ 20 V |
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MBRT20035R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 35V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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1N3889 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 50V 12A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
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MBRT20040R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 40V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBR12060CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 60V 120A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A Current - Reverse Leakage @ Vr: 3 mA @ 20 V |
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MBR400100CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 100V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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1N2130AR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 150V 60A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
на замовлення 446 шт: термін постачання 21-31 дні (днів) |
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S300YR | GeneSiC Semiconductor |
Description: DIODE GP REV 1.6KV 300A DO9 Packaging: Bulk Package / Case: DO-205AB, DO-9, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 300A Supplier Device Package: DO-9 Operating Temperature - Junction: -60°C ~ 180°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 300 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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MBRT30040R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 40V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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MBRH12040 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 120A D-67 Packaging: Bulk Package / Case: D-67 Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 120A Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A Current - Reverse Leakage @ Vr: 4 mA @ 20 V |
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MBRH12040R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 40V 120A D-67 Packaging: Bulk Package / Case: D-67 HALF-PAK Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V |
на замовлення 45 шт: термін постачання 21-31 дні (днів) |
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1N1188R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 400V 35A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 35A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 190°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
на замовлення 74 шт: термін постачання 21-31 дні (днів) |
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MBR40035CTR | GeneSiC Semiconductor |
Description: DIODE MODULE 35V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 A Current - Reverse Leakage @ Vr: 1 mA @ 35 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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1N1190 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 35A DO5 |
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1N1199AR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 50V 12A DO4 |
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FR70G02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 70A DO5 |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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MBRT20035 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 35V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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FR70GR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 400V 70A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 70A Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 70 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V |
на замовлення 124 шт: термін постачання 21-31 дні (днів) |
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MUR7020 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 70A DO5 |
на замовлення 89 шт: термін постачання 21-31 дні (днів) |
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MBR12045CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 45V 120A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A Current - Reverse Leakage @ Vr: 3 mA @ 20 V |
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MBRT20040 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 40V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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FR85G02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 85A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 85 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V |
на замовлення 346 шт: термін постачання 21-31 дні (днів) |
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MBR12045CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 45V 120A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A Current - Reverse Leakage @ Vr: 3 mA @ 20 V |
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FR85GR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 400V 85A DO5 |
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MBR400100CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 100V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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FST16035 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 35V 160A TO249AB Packaging: Bulk Package / Case: TO-249AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 160A Supplier Device Package: TO-249AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 160 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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1N3889R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 50V 12A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
на замовлення 174 шт: термін постачання 21-31 дні (днів) |
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MBRT30035 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 35V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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1N2130A | GeneSiC Semiconductor |
Description: DIODE GEN PURP 150V 60A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
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MBR12060CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 60V 120A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A Current - Reverse Leakage @ Vr: 3 mA @ 20 V |
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S300Y | GeneSiC Semiconductor |
Description: DIODE GEN PURP 1.6KV 300A DO9 Packaging: Bulk Package / Case: DO-205AB, DO-9, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: DO-9 Operating Temperature - Junction: -60°C ~ 180°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 300 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
на замовлення 75 шт: термін постачання 21-31 дні (днів) |
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MBRT30035R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 35V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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1N1184 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 100V 35A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 35A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 190°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
на замовлення 719 шт: термін постачання 21-31 дні (днів) |
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1N3892R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 400V 12A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
на замовлення 494 шт: термін постачання 21-31 дні (днів) |
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MBR20030CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 30V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
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MBRT30040 | GeneSiC Semiconductor |
Description: DIODE MODULE 40V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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S85J | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 85A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 180°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MBR20030CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 30V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товар відсутній |
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1N2138A | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 60A DO5 |
товар відсутній |
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MBR30035CT | GeneSiC Semiconductor |
Description: DIODE MODULE 35V 200A 2TOWER |
товар відсутній |
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S85JR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 600V 85A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 85A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 180°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 479 шт: термін постачання 21-31 дні (днів) |
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MBRT30045 | GeneSiC Semiconductor |
Description: DIODE MODULE 45V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товар відсутній |
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1N2138AR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 600V 60A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
на замовлення 157 шт: термін постачання 21-31 дні (днів) |
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MBR30035CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 35V 150A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 150 A Current - Reverse Leakage @ Vr: 1 mA @ 35 V |
на замовлення 21 шт: термін постачання 21-31 дні (днів) |
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S85Q | GeneSiC Semiconductor |
Description: DIODE GEN PURP 1.2KV 85A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 180°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 495 шт: термін постачання 21-31 дні (днів) |
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1N1188 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 35A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 35A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 190°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товар відсутній |
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MBRT30045R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 45V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товар відсутній |
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S85QR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 1.2KV 85A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 85A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 180°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товар відсутній |
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MBRT400100 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 100V 200A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 200 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
на замовлення 79 шт: термін постачання 21-31 дні (днів) |
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MBR40035CT | GeneSiC Semiconductor |
Description: DIODE MODULE 35V 400A 2TOWER |
товар відсутній |
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MBRT40035 | GeneSiC Semiconductor |
Description: DIODE MODULE 35V 400A 3TOWER |
товар відсутній |
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MBR12020CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 20V 120A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A Current - Reverse Leakage @ Vr: 3 mA @ 20 V |
товар відсутній |
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MBRT400100R | GeneSiC Semiconductor |
Description: DIODE MODULE 100V 400A 3TOWER |
товар відсутній |
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1N3214R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 600V 15A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 15A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товар відсутній |
| FR30G02 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 30A DO5
Description: DIODE GEN PURP 400V 30A DO5
на замовлення 7 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 945 грн |
| FR30GR02 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 30A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE GEN PURP REV 400V 30A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
на замовлення 244 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1049.91 грн |
| FR40G02 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Description: DIODE GEN PURP 400V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
на замовлення 56 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1147.89 грн |
| 10+ | 934.07 грн |
| 25+ | 873.39 грн |
| MBR12035 CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 120
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
Description: DIODE MOD SCHOTT 35V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 120
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
товар відсутній
| FR40GR02 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 40A DO5
Description: DIODE GEN PURP REV 400V 40A DO5
товар відсутній
| MBR12040CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 40V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Description: DIODE MOD SCHOTT 40V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товар відсутній
| MBR12040CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 40V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Description: DIODE MOD SCHOTT 40V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товар відсутній
| MBRT20035R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 35V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| 1N3889 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE GEN PURP 50V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товар відсутній
| MBRT20040R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 40V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 40V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBR12060CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Description: DIODE MOD SCHOTT 60V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товар відсутній
| MBR400100CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7332.43 грн |
| 1N2130AR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 150V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 150V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 446 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 843.94 грн |
| 10+ | 671.54 грн |
| 25+ | 622.43 грн |
| 100+ | 520.72 грн |
| 250+ | 482.63 грн |
| S300YR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GP REV 1.6KV 300A DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-9
Operating Temperature - Junction: -60°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 300 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: DIODE GP REV 1.6KV 300A DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-9
Operating Temperature - Junction: -60°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 300 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4797.51 грн |
| MBRT30040R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 40V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 40V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7912.54 грн |
| MBRH12040 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 120A D-67
Packaging: Bulk
Package / Case: D-67
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
Description: DIODE SCHOTTKY 40V 120A D-67
Packaging: Bulk
Package / Case: D-67
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
товар відсутній
| MBRH12040R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 40V 120A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Description: DIODE SCHOTTKY REV 40V 120A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
на замовлення 45 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4645.54 грн |
| 10+ | 3828.17 грн |
| 25+ | 3598.16 грн |
| 1N1188R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 74 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 780.69 грн |
| MBR40035CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 35V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Description: DIODE MODULE 35V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7942.63 грн |
| FR70G02 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 70A DO5
Description: DIODE GEN PURP 400V 70A DO5
на замовлення 24 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1489.63 грн |
| MBRT20035 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 35V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| FR70GR02 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Description: DIODE GEN PURP REV 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
на замовлення 124 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1645.46 грн |
| 10+ | 1321.32 грн |
| 25+ | 1321.22 грн |
| MUR7020 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 70A DO5
Description: DIODE GEN PURP 200V 70A DO5
на замовлення 89 шт:
термін постачання 21-31 дні (днів)| MBR12045CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Description: DIODE MOD SCHOTT 45V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товар відсутній
| MBRT20040 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 40V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 40V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| FR85G02 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 85 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Description: DIODE GEN PURP 400V 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 85 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
на замовлення 346 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1896.94 грн |
| 10+ | 1547.07 грн |
| 25+ | 1448.1 грн |
| 100+ | 1229.58 грн |
| MBR12045CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Description: DIODE MOD SCHOTT 45V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товар відсутній
| FR85GR02 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 85A DO5
Description: DIODE GEN PURP REV 400V 85A DO5
товар відсутній
| MBR400100CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7332.43 грн |
| FST16035 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 35V 160A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 160A
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 160 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOT 35V 160A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 160A
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 160 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5701.63 грн |
| 10+ | 4752.28 грн |
| 25+ | 4487.04 грн |
| 1N3889R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 50V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE GEN PURP REV 50V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
на замовлення 174 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 660.34 грн |
| 10+ | 515.91 грн |
| 25+ | 474.86 грн |
| 100+ | 393.08 грн |
| MBRT30035 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 35V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7912.54 грн |
| 1N2130A |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 150V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 150V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
| MBR12060CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Description: DIODE MOD SCHOTT 60V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товар відсутній
| S300Y |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.6KV 300A DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-9
Operating Temperature - Junction: -60°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 300 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: DIODE GEN PURP 1.6KV 300A DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-9
Operating Temperature - Junction: -60°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 300 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
на замовлення 75 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4669.46 грн |
| 10+ | 4004.07 грн |
| 25+ | 3823.37 грн |
| MBRT30035R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 35V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7912.54 грн |
| 1N1184 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 100V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 719 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 728.23 грн |
| 10+ | 585.74 грн |
| 25+ | 545.32 грн |
| 100+ | 459.35 грн |
| 250+ | 427.69 грн |
| 500+ | 405.14 грн |
| 1N3892R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE GEN PURP REV 400V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
на замовлення 494 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 666.51 грн |
| 10+ | 521.04 грн |
| 25+ | 479.65 грн |
| 100+ | 397.04 грн |
| 250+ | 365.44 грн |
| MBR20030CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товар відсутній
| MBRT30040 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 40V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MODULE 40V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| S85J |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 600V 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1081.54 грн |
| 10+ | 875.9 грн |
| 25+ | 817.5 грн |
| 100+ | 691.11 грн |
| 250+ | 645.02 грн |
| MBR20030CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товар відсутній
| S85JR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP REV 600V 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 479 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1081.54 грн |
| 10+ | 875.9 грн |
| 25+ | 817.5 грн |
| 100+ | 691.11 грн |
| 250+ | 645.02 грн |
| MBRT30045 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 45V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MODULE 45V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| 1N2138AR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 600V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 157 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 843.94 грн |
| 10+ | 671.54 грн |
| 25+ | 622.43 грн |
| 100+ | 520.72 грн |
| MBR30035CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Description: DIODE MOD SCHOTT 35V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
на замовлення 21 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6972.94 грн |
| S85Q |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 1.2KV 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 495 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1081.54 грн |
| 10+ | 875.9 грн |
| 25+ | 817.5 грн |
| 100+ | 691.11 грн |
| 250+ | 645.02 грн |
| 1N1188 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
| MBRT30045R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 45V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| S85QR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1.2KV 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP REV 1.2KV 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
| MBRT400100 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 200 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOT 100V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 200 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 79 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8665.46 грн |
| 10+ | 7380.43 грн |
| 25+ | 7028.41 грн |
| 50+ | 6356.46 грн |
| MBR12020CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Description: DIODE MOD SCHOTT 20V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товар відсутній
| MBRT400100R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 400A 3TOWER
Description: DIODE MODULE 100V 400A 3TOWER
товар відсутній
| 1N3214R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 15A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 600V 15A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній