![GB01SLT12-252 GB01SLT12-252](https://www.mouser.com/images/genesicsemiconductor/lrg/gb01slt12-252_SPL.jpg)
GB01SLT12-252 GeneSiC Semiconductor
на замовлення 4248 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 122.18 грн |
10+ | 104.27 грн |
25+ | 85.05 грн |
100+ | 78.02 грн |
Відгуки про товар
Написати відгук
Технічний опис GB01SLT12-252 GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 1.2KV 1A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 69pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: TO-252, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A, Current - Reverse Leakage @ Vr: 2 µA @ 1200 V.
Інші пропозиції GB01SLT12-252
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
GB01SLT12-252 | Виробник : GeneSiC Semiconductor |
![]() |
товар відсутній |
|
![]() |
GB01SLT12-252 | Виробник : GeneSiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 1A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: TO252-2 Kind of package: reel; tape Max. forward impulse current: 8A кількість в упаковці: 1 шт |
товар відсутній |
|
![]() |
GB01SLT12-252 | Виробник : GeneSiC Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 69pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 1200 V |
товар відсутній |
|
![]() |
GB01SLT12-252 | Виробник : GeneSiC Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 69pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 1200 V |
товар відсутній |
|
![]() |
GB01SLT12-252 | Виробник : GeneSiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 1A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: TO252-2 Kind of package: reel; tape Max. forward impulse current: 8A |
товар відсутній |