G3R20MT17K GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 124A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Power Dissipation (Max): 809W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
Description: SIC MOSFET N-CH 124A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Power Dissipation (Max): 809W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
на замовлення 720 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 7730.75 грн |
10+ | 6905.35 грн |
25+ | 6701.77 грн |
100+ | 6010.98 грн |
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Технічний опис G3R20MT17K GeneSiC Semiconductor
Description: SIC MOSFET N-CH 124A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 124A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V, Power Dissipation (Max): 809W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 15mA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V.
Інші пропозиції G3R20MT17K за ціною від 6199.9 грн до 8175.4 грн
Фото | Назва | Виробник | Інформація |
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G3R20MT17K | Виробник : GeneSiC Semiconductor |
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на замовлення 648 шт: термін постачання 21-30 дні (днів) |
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G3R20MT17K | Виробник : GeneSiC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 88A; Idm: 300A; 809W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 88A Pulsed drain current: 300A Power dissipation: 809W Case: TO247-4 Gate-source voltage: -5...15V On-state resistance: 20mΩ Mounting: THT Gate charge: 400nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
товар відсутній |
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G3R20MT17K | Виробник : GeneSiC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 88A; Idm: 300A; 809W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 88A Pulsed drain current: 300A Power dissipation: 809W Case: TO247-4 Gate-source voltage: -5...15V On-state resistance: 20mΩ Mounting: THT Gate charge: 400nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
товар відсутній |