Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5727) > Сторінка 96 з 96
| Фото | Назва | Виробник | Інформація |
Доступність |
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GB50SLT12-247 | GeneSiC SEMICONDUCTOR |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 50A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: TO247-2 Kind of package: tube Max. forward impulse current: 0.4kA |
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G3R350MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 75W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 16A Power dissipation: 75W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 0.35Ω Mounting: SMD Gate charge: 12nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
на замовлення 960 шт: термін постачання 21-30 дні (днів) |
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GB01SLT12-252 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 1A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: TO252-2 Kind of package: reel; tape Max. forward impulse current: 8A |
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GB02SLT12-252 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: TO252-2 Kind of package: reel; tape Max. forward impulse current: 16A |
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GC2X10MPS12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 1.2kV Max. load current: 20A Max. forward voltage: 1.5V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 80A |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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GC2X5MPS12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube Kind of package: tube Features of semiconductor devices: MPS Technology: SiC Max. forward impulse current: 40A Semiconductor structure: common cathode; double Load current: 5A x2 Max. forward voltage: 1.5V Max. load current: 10A Max. off-state voltage: 1.2kV Case: TO247-3 Type of diode: Schottky rectifying Mounting: THT |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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G3R450MT17D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 6A Pulsed drain current: 16A Power dissipation: 88W Case: TO247-3 Gate-source voltage: -5...15V On-state resistance: 0.45Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced |
на замовлення 550 шт: термін постачання 21-30 дні (днів) |
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G3R160MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 128W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 16A Pulsed drain current: 40A Power dissipation: 128W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 28nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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G3R30MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 68A Pulsed drain current: 200A Power dissipation: 459W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 30mΩ Mounting: SMD Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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G3R40MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 53A Pulsed drain current: 140A Power dissipation: 374W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 40mΩ Mounting: SMD Gate charge: 106nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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G3R75MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Pulsed drain current: 80A Power dissipation: 224W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 75mΩ Mounting: SMD Gate charge: 54nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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| GD2X30MPS06D | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 30Ax2; TO247-3; tube Mounting: THT Max. off-state voltage: 650V Max. load current: 88A Max. forward voltage: 1.8V Load current: 30A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 168A Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Case: TO247-3 |
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GD2X30MPS06N | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw Type of module: diode Max. off-state voltage: 650V Max. load current: 60A Max. forward voltage: 1.5V Load current: 30A x2 Semiconductor structure: double independent Reverse recovery time: 10ns Max. forward impulse current: 168A Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: MPS Technology: SiC Case: SOT227B |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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GD2X30MPS12N | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 30Ax2; SOT227B; screw Type of module: diode Max. off-state voltage: 1.2kV Max. load current: 60A Max. forward voltage: 1.5V Load current: 30A x2 Semiconductor structure: double independent Reverse recovery time: 10ns Max. forward impulse current: 240A Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: MPS Technology: SiC Case: SOT227B |
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GB10MPS17-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube Technology: SiC Case: TO247-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.7kV Features of semiconductor devices: MPS Type of diode: Schottky rectifying Max. forward voltage: 1.5V Load current: 10A Max. forward impulse current: 87A |
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G3R20MT17K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 88A; Idm: 300A; 809W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 88A Pulsed drain current: 300A Power dissipation: 809W Case: TO247-4 Gate-source voltage: -5...15V On-state resistance: 20mΩ Mounting: THT Gate charge: 400nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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GB2X100MPS12-227 | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 200A Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 100A x2 Case: SOT227B Max. forward voltage: 1.5V Max. forward impulse current: 800A Electrical mounting: screw Max. load current: 200A Mechanical mounting: screw Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Reverse recovery time: 10ns |
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GC2X100MPS06-227 | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 650V; If: 100Ax2; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 650V Load current: 100A x2 Case: SOT227B Max. forward voltage: 1.5V Max. forward impulse current: 640A Electrical mounting: screw Max. load current: 200A Mechanical mounting: screw Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Reverse recovery time: 10ns |
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| GD2X100MPS12N | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 420A Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 100A x2 Case: SOT227B Max. forward voltage: 1.9V Max. forward impulse current: 800A Electrical mounting: screw Max. load current: 420A Mechanical mounting: screw Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Reverse recovery time: 10ns |
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| GD2X20MPS12D | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27Ax2; TO247-3; tube Mounting: THT Kind of package: tube Features of semiconductor devices: MPS Technology: SiC Case: TO247-3 Max. off-state voltage: 1.2kV Max. load current: 67A Max. forward voltage: 1.9V Load current: 27A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 128A Type of diode: Schottky rectifying |
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G3R45MT17D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 43A Pulsed drain current: 160A Power dissipation: 438W Case: TO247-3 Gate-source voltage: -5...15V On-state resistance: 45mΩ Mounting: THT Gate charge: 182nC Kind of package: tube Kind of channel: enhanced |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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GC2X8MPS12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; tube Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 1.2kV Max. load current: 16A Max. forward voltage: 1.5V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 60A |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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GC2X15MPS12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube Mounting: THT Kind of package: tube Technology: SiC Case: TO247-3 Max. off-state voltage: 1.2kV Max. load current: 30A Max. forward voltage: 1.5V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 120A Type of diode: Schottky rectifying Features of semiconductor devices: MPS |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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G3R20MT17N | GeneSiC SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.7kV Drain current: 70A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 20mΩ Pulsed drain current: 300A Power dissipation: 523W Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Mechanical mounting: screw |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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GD20MPS12H | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27A; TO247-2; tube Technology: SiC Case: TO247-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Features of semiconductor devices: MPS Max. load current: 67A Max. forward voltage: 1.9V Load current: 27A Max. forward impulse current: 128A Type of diode: Schottky rectifying |
на замовлення 600 шт: термін постачання 21-30 дні (днів) |
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| GD10MPS12H | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO247-2; tube Case: TO247-2 Mounting: THT Max. forward impulse current: 64A Semiconductor structure: single diode Load current: 16A Max. forward voltage: 1.9V Max. load current: 33A Max. off-state voltage: 1.2kV Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC |
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G3R45MT17K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 43A Pulsed drain current: 160A Power dissipation: 438W Case: TO247-4 Gate-source voltage: -5...15V On-state resistance: 45mΩ Mounting: THT Gate charge: 182nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
на замовлення 354 шт: термін постачання 21-30 дні (днів) |
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| GB50SLT12-247 |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 0.4kA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 0.4kA
товар відсутній
| G3R350MT12J |
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Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 75W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 75W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 75W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 75W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
на замовлення 960 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 388.95 грн |
| 3+ | 309.46 грн |
| 8+ | 292.98 грн |
| GB01SLT12-252 |
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Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO252-2
Kind of package: reel; tape
Max. forward impulse current: 8A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO252-2
Kind of package: reel; tape
Max. forward impulse current: 8A
товар відсутній
| GB02SLT12-252 |
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Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO252-2
Kind of package: reel; tape
Max. forward impulse current: 16A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO252-2
Kind of package: reel; tape
Max. forward impulse current: 16A
товар відсутній
| GC2X10MPS12-247 |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 20A
Max. forward voltage: 1.5V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 80A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 20A
Max. forward voltage: 1.5V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 80A
на замовлення 13 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 814.21 грн |
| 2+ | 526.01 грн |
| 5+ | 497.54 грн |
| GC2X5MPS12-247 |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube
Kind of package: tube
Features of semiconductor devices: MPS
Technology: SiC
Max. forward impulse current: 40A
Semiconductor structure: common cathode; double
Load current: 5A x2
Max. forward voltage: 1.5V
Max. load current: 10A
Max. off-state voltage: 1.2kV
Case: TO247-3
Type of diode: Schottky rectifying
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube
Kind of package: tube
Features of semiconductor devices: MPS
Technology: SiC
Max. forward impulse current: 40A
Semiconductor structure: common cathode; double
Load current: 5A x2
Max. forward voltage: 1.5V
Max. load current: 10A
Max. off-state voltage: 1.2kV
Case: TO247-3
Type of diode: Schottky rectifying
Mounting: THT
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 475.29 грн |
| 3+ | 317.71 грн |
| 8+ | 300.47 грн |
| G3R450MT17D |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 88W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 88W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 550 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 500.31 грн |
| 3+ | 377.65 грн |
| 7+ | 357.42 грн |
| 120+ | 350.68 грн |
| G3R160MT12J |
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Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 128W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 128W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 128W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 128W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
| G3R30MT12J |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 68A
Pulsed drain current: 200A
Power dissipation: 459W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 68A
Pulsed drain current: 200A
Power dissipation: 459W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
| G3R40MT12J |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 53A
Pulsed drain current: 140A
Power dissipation: 374W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 53A
Pulsed drain current: 140A
Power dissipation: 374W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
| G3R75MT12J |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 80A
Power dissipation: 224W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 80A
Power dissipation: 224W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
| GD2X30MPS06D |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30Ax2; TO247-3; tube
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 88A
Max. forward voltage: 1.8V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 168A
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30Ax2; TO247-3; tube
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 88A
Max. forward voltage: 1.8V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 168A
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO247-3
товар відсутній
| GD2X30MPS06N |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw
Type of module: diode
Max. off-state voltage: 650V
Max. load current: 60A
Max. forward voltage: 1.5V
Load current: 30A x2
Semiconductor structure: double independent
Reverse recovery time: 10ns
Max. forward impulse current: 168A
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Case: SOT227B
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw
Type of module: diode
Max. off-state voltage: 650V
Max. load current: 60A
Max. forward voltage: 1.5V
Load current: 30A x2
Semiconductor structure: double independent
Reverse recovery time: 10ns
Max. forward impulse current: 168A
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Case: SOT227B
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1636.48 грн |
| 2+ | 1436.42 грн |
| GD2X30MPS12N |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 30Ax2; SOT227B; screw
Type of module: diode
Max. off-state voltage: 1.2kV
Max. load current: 60A
Max. forward voltage: 1.5V
Load current: 30A x2
Semiconductor structure: double independent
Reverse recovery time: 10ns
Max. forward impulse current: 240A
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Case: SOT227B
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 30Ax2; SOT227B; screw
Type of module: diode
Max. off-state voltage: 1.2kV
Max. load current: 60A
Max. forward voltage: 1.5V
Load current: 30A x2
Semiconductor structure: double independent
Reverse recovery time: 10ns
Max. forward impulse current: 240A
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Case: SOT227B
товар відсутній
| GB10MPS17-247 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Max. forward voltage: 1.5V
Load current: 10A
Max. forward impulse current: 87A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Max. forward voltage: 1.5V
Load current: 10A
Max. forward impulse current: 87A
товар відсутній
| G3R20MT17K |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 88A; Idm: 300A; 809W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 88A
Pulsed drain current: 300A
Power dissipation: 809W
Case: TO247-4
Gate-source voltage: -5...15V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 88A; Idm: 300A; 809W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 88A
Pulsed drain current: 300A
Power dissipation: 809W
Case: TO247-4
Gate-source voltage: -5...15V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
| GB2X100MPS12-227 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 200A
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 800A
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 200A
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 800A
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
товар відсутній
| GC2X100MPS06-227 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 100Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 640A
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 100Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 640A
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
товар відсутній
| GD2X100MPS12N |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 420A
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.9V
Max. forward impulse current: 800A
Electrical mounting: screw
Max. load current: 420A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 420A
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.9V
Max. forward impulse current: 800A
Electrical mounting: screw
Max. load current: 420A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
товар відсутній
| GD2X20MPS12D |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27Ax2; TO247-3; tube
Mounting: THT
Kind of package: tube
Features of semiconductor devices: MPS
Technology: SiC
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 67A
Max. forward voltage: 1.9V
Load current: 27A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 128A
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27Ax2; TO247-3; tube
Mounting: THT
Kind of package: tube
Features of semiconductor devices: MPS
Technology: SiC
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 67A
Max. forward voltage: 1.9V
Load current: 27A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 128A
Type of diode: Schottky rectifying
товар відсутній
| G3R45MT17D |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 43A
Pulsed drain current: 160A
Power dissipation: 438W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 43A
Pulsed drain current: 160A
Power dissipation: 438W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2379.68 грн |
| 2+ | 2089.06 грн |
| GC2X8MPS12-247 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 16A
Max. forward voltage: 1.5V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 60A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 16A
Max. forward voltage: 1.5V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 60A
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 647.98 грн |
| 3+ | 415.86 грн |
| 6+ | 393.39 грн |
| GC2X15MPS12-247 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Mounting: THT
Kind of package: tube
Technology: SiC
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 30A
Max. forward voltage: 1.5V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 120A
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Mounting: THT
Kind of package: tube
Technology: SiC
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 30A
Max. forward voltage: 1.5V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 120A
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
на замовлення 21 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 972.37 грн |
| 2+ | 639.16 грн |
| 4+ | 604.69 грн |
| G3R20MT17N |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 70A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 300A
Power dissipation: 523W
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 70A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 300A
Power dissipation: 523W
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8889.3 грн |
| GD20MPS12H |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Features of semiconductor devices: MPS
Max. load current: 67A
Max. forward voltage: 1.9V
Load current: 27A
Max. forward impulse current: 128A
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Features of semiconductor devices: MPS
Max. load current: 67A
Max. forward voltage: 1.9V
Load current: 27A
Max. forward impulse current: 128A
Type of diode: Schottky rectifying
на замовлення 600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 481.75 грн |
| 3+ | 394.13 грн |
| 7+ | 372.4 грн |
| 120+ | 358.17 грн |
| GD10MPS12H |
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO247-2; tube
Case: TO247-2
Mounting: THT
Max. forward impulse current: 64A
Semiconductor structure: single diode
Load current: 16A
Max. forward voltage: 1.9V
Max. load current: 33A
Max. off-state voltage: 1.2kV
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO247-2; tube
Case: TO247-2
Mounting: THT
Max. forward impulse current: 64A
Semiconductor structure: single diode
Load current: 16A
Max. forward voltage: 1.9V
Max. load current: 33A
Max. off-state voltage: 1.2kV
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
товар відсутній
| G3R45MT17K |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 43A
Pulsed drain current: 160A
Power dissipation: 438W
Case: TO247-4
Gate-source voltage: -5...15V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 43A
Pulsed drain current: 160A
Power dissipation: 438W
Case: TO247-4
Gate-source voltage: -5...15V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
на замовлення 354 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2226.36 грн |
| 2+ | 1954.94 грн |
| 30+ | 1879.26 грн |