Продукція > IAU
Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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IAUA120N04S5N014AUMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) PG-HSOF-5 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 60A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 60µA Supplier Device Package: PG-HSOF-5-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4828 pF @ 25 V | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUA120N04S5N014AUMA1 | INFINEON | Description: INFINEON - IAUA120N04S5N014AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 120 A, 0.0012 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 3 - 168 Stunden usEccn: EAR99 Verlustleistung Pd: 136W Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: HSOF Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0012ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0012ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1943 шт: термін постачання 21-31 дні (днів) |
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IAUA120N04S5N014AUMA1 | Infineon Technologies | MOSFETs N | на замовлення 4682 шт: термін постачання 21-30 дні (днів) |
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IAUA120N04S5N014AUMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 120A Automotive 6-Pin(5+Tab) HSOF T/R | товар відсутній | |||||||||||||||||||
IAUA120N04S5N014AUMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) PG-HSOF-5 Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 60A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 60µA Supplier Device Package: PG-HSOF-5-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4828 pF @ 25 V | на замовлення 3965 шт: термін постачання 21-31 дні (днів) |
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IAUA120N04S5N014AUMA1 | INFINEON | Description: INFINEON - IAUA120N04S5N014AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 120 A, 0.0012 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 3 - 168 Stunden usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0012ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1943 шт: термін постачання 21-31 дні (днів) |
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IAUA170N10S5N031AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 519A; 197W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Pulsed drain current: 519A Power dissipation: 197W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 88nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUA170N10S5N031AUMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-HSOF-5 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tj) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 85A, 10V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 110µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6405 pF @ 50 V | товар відсутній | |||||||||||||||||||
IAUA170N10S5N031AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 519A; 197W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Pulsed drain current: 519A Power dissipation: 197W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 88nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт | товар відсутній | |||||||||||||||||||
IAUA170N10S5N031AUMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | на замовлення 741 шт: термін постачання 21-30 дні (днів) |
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IAUA170N10S5N031AUMA1 | Infineon Technologies | SP005423391 | товар відсутній | |||||||||||||||||||
IAUA170N10S5N031AUMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-HSOF-5 Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tj) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 85A, 10V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 110µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6405 pF @ 50 V | на замовлення 1874 шт: термін постачання 21-31 дні (днів) |
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IAUA180N04S5N012 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | товар відсутній | |||||||||||||||||||
IAUA180N04S5N012AUMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 180A 6-Pin(5+Tab) HSOF T/R Automotive AEC-Q101 | на замовлення 1405 шт: термін постачання 21-31 дні (днів) |
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IAUA180N04S5N012AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Pulsed drain current: 720A Power dissipation: 125W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт | товар відсутній | |||||||||||||||||||
IAUA180N04S5N012AUMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 180A HSOF-5-1 Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 90A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 70µA Supplier Device Package: PG-HSOF-5-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6158 pF @ 25 V | на замовлення 175 шт: термін постачання 21-31 дні (днів) |
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IAUA180N04S5N012AUMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 180A 6-Pin(5+Tab) HSOF T/R Automotive AEC-Q101 | на замовлення 1405 шт: термін постачання 21-31 дні (днів) |
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IAUA180N04S5N012AUMA1 | INFINEON | Description: INFINEON - IAUA180N04S5N012AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 180 A, 0.001 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 180A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 3 - 168 Stunden usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.001ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 3125 шт: термін постачання 21-31 дні (днів) |
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IAUA180N04S5N012AUMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 180A Automotive 6-Pin(5+Tab) HSOF T/R | товар відсутній | |||||||||||||||||||
IAUA180N04S5N012AUMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 180A HSOF-5-1 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 90A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 70µA Supplier Device Package: PG-HSOF-5-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6158 pF @ 25 V | товар відсутній | |||||||||||||||||||
IAUA180N04S5N012AUMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 180A 6-Pin(5+Tab) HSOF T/R Automotive AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUA180N04S5N012AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Pulsed drain current: 720A Power dissipation: 125W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUA180N04S5N012AUMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 180A 6-Pin(5+Tab) HSOF T/R Automotive AEC-Q101 | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUA180N04S5N012AUMA1 | INFINEON | Description: INFINEON - IAUA180N04S5N012AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 180 A, 0.001 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 180A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 3 - 168 Stunden usEccn: EAR99 Verlustleistung Pd: 125W Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: HSOF Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.001ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.001ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 3125 шт: термін постачання 21-31 дні (днів) |
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IAUA180N04S5N012AUMA1 | Infineon Technologies | MOSFETs N | на замовлення 2228 шт: термін постачання 21-30 дні (днів) |
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IAUA180N08S5N026AUMA1 | Infineon Technologies | SP005423387 | товар відсутній | |||||||||||||||||||
IAUA180N08S5N026AUMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-HSOF-5 Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tj) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 90A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 100µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5980 pF @ 40 V | на замовлення 1570 шт: термін постачання 21-31 дні (днів) |
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IAUA180N08S5N026AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 25A Pulsed drain current: 546A Power dissipation: 179W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUA180N08S5N026AUMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | на замовлення 3391 шт: термін постачання 21-30 дні (днів) |
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IAUA180N08S5N026AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 25A Pulsed drain current: 546A Power dissipation: 179W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт | товар відсутній | |||||||||||||||||||
IAUA180N08S5N026AUMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-HSOF-5 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tj) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 90A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 100µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5980 pF @ 40 V | товар відсутній | |||||||||||||||||||
IAUA180N10S5N029AUMA1 | INFINEON | Description: INFINEON - IAUA180N10S5N029AUMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 180 A, 0.0023 ohm, HSOF-5-4, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 180A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 221W Bauform - Transistor: HSOF-5-4 Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS-5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0023ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUA180N10S5N029AUMA1 | Infineon Technologies | MOSFETs N | на замовлення 1697 шт: термін постачання 21-30 дні (днів) |
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IAUA180N10S5N029AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 24A Pulsed drain current: 561A Power dissipation: 221W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт | товар відсутній | |||||||||||||||||||
IAUA180N10S5N029AUMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-HSOF-5 Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tj) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V Power Dissipation (Max): 221W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 130µA Supplier Device Package: PG-HSOF-5-4 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V | на замовлення 1926 шт: термін постачання 21-31 дні (днів) |
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IAUA180N10S5N029AUMA1 | INFINEON | Description: INFINEON - IAUA180N10S5N029AUMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 180 A, 0.0023 ohm, HSOF-5-4, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 180A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 221W Bauform - Transistor: HSOF-5-4 Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS-5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0023ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUA180N10S5N029AUMA1 | Infineon Technologies | SP005423385 | товар відсутній | |||||||||||||||||||
IAUA180N10S5N029AUMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-HSOF-5 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tj) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V Power Dissipation (Max): 221W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 130µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V | товар відсутній | |||||||||||||||||||
IAUA180N10S5N029AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 24A Pulsed drain current: 561A Power dissipation: 221W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUA200N04S5N010 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | товар відсутній | |||||||||||||||||||
IAUA200N04S5N010ATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 100µA Supplier Device Package: PG-HSOF-5-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V | товар відсутній | |||||||||||||||||||
IAUA200N04S5N010ATMA1 | Infineon Technologies | SP005423841 | товар відсутній | |||||||||||||||||||
IAUA200N04S5N010ATMA1 | Infineon Technologies | MOSFET | товар відсутній | |||||||||||||||||||
IAUA200N04S5N010AUMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 200A Automotive AEC-Q101 6-Pin(5+Tab) HSOF T/R | на замовлення 1538 шт: термін постачання 21-31 дні (днів) |
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IAUA200N04S5N010AUMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 200A 5HSOF Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 100µA Supplier Device Package: PG-HSOF-5-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 4044 шт: термін постачання 21-31 дні (днів) |
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IAUA200N04S5N010AUMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 200A Automotive AEC-Q101 6-Pin(5+Tab) HSOF T/R | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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IAUA200N04S5N010AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 800A; 167W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 200A Pulsed drain current: 800A Power dissipation: 167W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Gate charge: 132nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | товар відсутній | |||||||||||||||||||
IAUA200N04S5N010AUMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 200A Automotive AEC-Q101 6-Pin(5+Tab) HSOF T/R | на замовлення 1092 шт: термін постачання 21-31 дні (днів) |
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IAUA200N04S5N010AUMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 200A 5HSOF Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 100µA Supplier Device Package: PG-HSOF-5-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUA200N04S5N010AUMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 200A Automotive AEC-Q101 6-Pin(5+Tab) HSOF T/R | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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IAUA200N04S5N010AUMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 200A Automotive 6-Pin(5+Tab) HSOF T/R | товар відсутній | |||||||||||||||||||
IAUA200N04S5N010AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 800A; 167W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 200A Pulsed drain current: 800A Power dissipation: 167W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Gate charge: 132nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||||||
IAUA200N04S5N010AUMA1 | Infineon Technologies | MOSFETs N | на замовлення 2048 шт: термін постачання 21-30 дні (днів) |
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IAUA200N04S5N010AUMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 200A Automotive AEC-Q101 6-Pin(5+Tab) HSOF T/R | на замовлення 1538 шт: термін постачання 21-31 дні (днів) |
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IAUA210N10S5N024AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 674A; 238W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 26A Pulsed drain current: 674A Power dissipation: 238W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 119nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUA210N10S5N024AUMA1 | INFINEON | Description: INFINEON - IAUA210N10S5N024AUMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 210 A, 0.002 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 210A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 238W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS-5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.002ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1235 шт: термін постачання 21-31 дні (днів) |
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IAUA210N10S5N024AUMA1 | Infineon Technologies | SP005412964 | товар відсутній | |||||||||||||||||||
IAUA210N10S5N024AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 674A; 238W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 26A Pulsed drain current: 674A Power dissipation: 238W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 119nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт | товар відсутній | |||||||||||||||||||
IAUA210N10S5N024AUMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-HSOF-5 Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210A (Tj) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 150µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8696 pF @ 50 V | на замовлення 3751 шт: термін постачання 21-31 дні (днів) |
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IAUA210N10S5N024AUMA1 | Infineon Technologies | MOSFETs N | на замовлення 1876 шт: термін постачання 21-30 дні (днів) |
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IAUA210N10S5N024AUMA1 | INFINEON | Description: INFINEON - IAUA210N10S5N024AUMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 210 A, 0.002 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 210A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 238W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS-5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.002ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1235 шт: термін постачання 21-31 дні (днів) |
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IAUA210N10S5N024AUMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-HSOF-5 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210A (Tj) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 150µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8696 pF @ 50 V | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUA220N08S5N021AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 27A; Idm: 677A; 211W; PG-HSOF-5 Mounting: SMD Drain-source voltage: 80V Drain current: 27A On-state resistance: 3mΩ Type of transistor: N-MOSFET Power dissipation: 211W Polarisation: unipolar Kind of package: reel; tape Gate charge: 105nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 677A Case: PG-HSOF-5 кількість в упаковці: 2000 шт | товар відсутній | |||||||||||||||||||
IAUA220N08S5N021AUMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-HSOF-5 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220A (Tj) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V Power Dissipation (Max): 211W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 120µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7219 pF @ 40 V | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUA220N08S5N021AUMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | на замовлення 1020 шт: термін постачання 21-30 дні (днів) |
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IAUA220N08S5N021AUMA1 | INFINEON | Description: INFINEON - IAUA220N08S5N021AUMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 220 A, 0.0018 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 220A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 211W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS -5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0018ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1255 шт: термін постачання 21-31 дні (днів) |
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IAUA220N08S5N021AUMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-HSOF-5 Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220A (Tj) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V Power Dissipation (Max): 211W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 120µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7219 pF @ 40 V | на замовлення 2970 шт: термін постачання 21-31 дні (днів) |
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IAUA220N08S5N021AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 27A; Idm: 677A; 211W; PG-HSOF-5 Mounting: SMD Drain-source voltage: 80V Drain current: 27A On-state resistance: 3mΩ Type of transistor: N-MOSFET Power dissipation: 211W Polarisation: unipolar Kind of package: reel; tape Gate charge: 105nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 677A Case: PG-HSOF-5 | товар відсутній | |||||||||||||||||||
IAUA220N08S5N021AUMA1 | INFINEON | Description: INFINEON - IAUA220N08S5N021AUMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 220 A, 0.0018 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 220A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 211W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS -5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0018ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1255 шт: термін постачання 21-31 дні (днів) |
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IAUA220N08S5N021AUMA1 | Infineon Technologies | Automotive Power Mosfet | товар відсутній | |||||||||||||||||||
IAUA250N04S6N005AUMA1 | INFINEON | Description: INFINEON - IAUA250N04S6N005AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 490 A, 0.00055 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 490A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS 6 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 550µohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1995 шт: термін постачання 21-31 дні (днів) |
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IAUA250N04S6N005AUMA1 | Infineon Technologies | Description: OPTIMOS POWER MOSFET Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Ta) Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 145µA Supplier Device Package: PG-HSOF-5-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11144 pF @ 25 V | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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IAUA250N04S6N005AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 62A; Idm: 1500A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 62A Pulsed drain current: 1.5kA Power dissipation: 250W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.7mΩ Mounting: SMD Gate charge: 170nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUA250N04S6N005AUMA1 | Infineon Technologies | SP005596859 | товар відсутній | |||||||||||||||||||
IAUA250N04S6N005AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 62A; Idm: 1500A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 62A Pulsed drain current: 1.5kA Power dissipation: 250W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.7mΩ Mounting: SMD Gate charge: 170nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт | товар відсутній | |||||||||||||||||||
IAUA250N04S6N005AUMA1 | INFINEON | Description: INFINEON - IAUA250N04S6N005AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 490 A, 0.00055 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 490A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS 6 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 550µohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1995 шт: термін постачання 21-31 дні (днів) |
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IAUA250N04S6N005AUMA1 | Infineon Technologies | MOSFETs N | на замовлення 5950 шт: термін постачання 21-30 дні (днів) |
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IAUA250N04S6N005AUMA1 | Infineon Technologies | Description: OPTIMOS POWER MOSFET Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Ta) Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 145µA Supplier Device Package: PG-HSOF-5-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11144 pF @ 25 V | на замовлення 4264 шт: термін постачання 21-31 дні (днів) |
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IAUA250N04S6N006AUMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) PG-HSOF-5 Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 450A (Tj) Rds On (Max) @ Id, Vgs: 0.64mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 145µA Supplier Device Package: PG-HSOF-5-4 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11064 pF @ 25 V | на замовлення 8077 шт: термін постачання 21-31 дні (днів) |
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IAUA250N04S6N006AUMA1 | Infineon Technologies | 40V, N-Ch, 0.6 m ohm Max, Automotive MOSFET | товар відсутній | |||||||||||||||||||
IAUA250N04S6N006AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 57A Pulsed drain current: 1.5kA Power dissipation: 250W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.7mΩ Mounting: SMD Gate charge: 169nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт | товар відсутній | |||||||||||||||||||
IAUA250N04S6N006AUMA1 | INFINEON | Description: INFINEON - IAUA250N04S6N006AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 450 A, 0.00047 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 450A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 3 - 168 Stunden usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS 6 productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 470µohm SVHC: No SVHC (23-Jan-2024) | на замовлення 5281 шт: термін постачання 21-31 дні (днів) |
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IAUA250N04S6N006AUMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | на замовлення 2247 шт: термін постачання 21-30 дні (днів) |
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IAUA250N04S6N006AUMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) PG-HSOF-5 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 450A (Tj) Rds On (Max) @ Id, Vgs: 0.64mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 145µA Supplier Device Package: PG-HSOF-5-4 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11064 pF @ 25 V | на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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IAUA250N04S6N006AUMA1 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IAUA250N04S6N006AUMA1 - IAUA250N04S6N006 - MOSFET20V,40V tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | на замовлення 9738 шт: термін постачання 21-31 дні (днів) |
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IAUA250N04S6N006AUMA1 | INFINEON | Description: INFINEON - IAUA250N04S6N006AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 450 A, 0.00047 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 450A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 3 - 168 Stunden usEccn: EAR99 Verlustleistung Pd: 250W Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: HSOF Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS 6 productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 470µohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 470µohm SVHC: No SVHC (23-Jan-2024) | на замовлення 5281 шт: термін постачання 21-31 дні (днів) |
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IAUA250N04S6N006AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 57A Pulsed drain current: 1.5kA Power dissipation: 250W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.7mΩ Mounting: SMD Gate charge: 169nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUA250N04S6N007AUMA1 | INFINEON | Description: INFINEON - IAUA250N04S6N007AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 435 A, 0.0005 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 435A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS 6 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 500µohm SVHC: No SVHC (23-Jan-2024) | на замовлення 712 шт: термін постачання 21-31 дні (днів) |
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IAUA250N04S6N007AUMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) PG-HSOF-5 Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 435A (Tj) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 130µA Supplier Device Package: PG-HSOF-5-4 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V | на замовлення 1905 шт: термін постачання 21-31 дні (днів) |
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IAUA250N04S6N007AUMA1 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IAUA250N04S6N007AUMA1 - IAUA250N04 - N CHANNEL MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | на замовлення 24233 шт: термін постачання 21-31 дні (днів) |
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IAUA250N04S6N007AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 1350A Power dissipation: 250W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 151nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUA250N04S6N007AUMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) PG-HSOF-5 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 435A (Tj) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 130µA Supplier Device Package: PG-HSOF-5-4 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V | товар відсутній | |||||||||||||||||||
IAUA250N04S6N007AUMA1 | INFINEON | Description: INFINEON - IAUA250N04S6N007AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 435 A, 0.0005 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 435A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 250W Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: HSOF Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS 6 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 500µohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 500µohm SVHC: No SVHC (23-Jan-2024) | на замовлення 712 шт: термін постачання 21-31 дні (днів) |
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IAUA250N04S6N007AUMA1 | Infineon Technologies | SP003127494 | товар відсутній | |||||||||||||||||||
IAUA250N04S6N007AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 1350A Power dissipation: 250W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 151nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт | товар відсутній | |||||||||||||||||||
IAUA250N04S6N007AUMA1 | Infineon Technologies | MOSFETs N | на замовлення 4061 шт: термін постачання 21-30 дні (днів) |
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IAUA250N04S6N007EAUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1300A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 1.3kA Power dissipation: 192W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.83Ω Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUA250N04S6N007EAUMA1 | Infineon Technologies | SP005596862 | товар відсутній | |||||||||||||||||||
IAUA250N04S6N007EAUMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 435A (Tj) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 130µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V | на замовлення 1212 шт: термін постачання 21-31 дні (днів) |
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IAUA250N04S6N007EAUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1300A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 1.3kA Power dissipation: 192W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.83Ω Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт | товар відсутній | |||||||||||||||||||
IAUA250N04S6N007EAUMA1 | INFINEON | Description: INFINEON - IAUA250N04S6N007EAUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 380 A, 0.0007 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 380A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 192W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS 6 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 700µohm SVHC: No SVHC (23-Jan-2024) | на замовлення 12289 шт: термін постачання 21-31 дні (днів) |
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IAUA250N04S6N007EAUMA1 | Infineon Technologies | MOSFETs N | на замовлення 11647 шт: термін постачання 21-30 дні (днів) |
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IAUA250N04S6N007EAUMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 435A (Tj) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 130µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V | товар відсутній | |||||||||||||||||||
IAUA250N04S6N007EAUMA1 | INFINEON | Description: INFINEON - IAUA250N04S6N007EAUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 380 A, 0.0007 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 380A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 192W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS 6 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 700µohm SVHC: No SVHC (23-Jan-2024) | на замовлення 12289 шт: термін постачання 21-31 дні (днів) |
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IAUA250N04S6N008AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 51A; Idm: 1100A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 51A Pulsed drain current: 1100A Power dissipation: 172W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 960µΩ Mounting: SMD Gate charge: 109nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт | товар відсутній | |||||||||||||||||||
IAUA250N04S6N008AUMA1 | INFINEON | Description: INFINEON - IAUA250N04S6N008AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 340 A, 0.0008 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 340A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 3 - 168 Stunden usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 172W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS 6 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 800µohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1730 шт: термін постачання 21-31 дні (днів) |
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IAUA250N04S6N008AUMA1 | Infineon Technologies | MOSFETs N | на замовлення 1546 шт: термін постачання 21-30 дні (днів) |
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IAUA250N04S6N008AUMA1 | Infineon Technologies | Description: OPTIMOS POWER MOSFET Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Ta) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V Power Dissipation (Max): 172W (Tc) Vgs(th) (Max) @ Id: 3V @ 90µA Supplier Device Package: PG-HSOF-5-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7088 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 159 шт: термін постачання 21-31 дні (днів) |
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IAUA250N04S6N008AUMA1 | INFINEON | Description: INFINEON - IAUA250N04S6N008AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 340 A, 0.0008 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 340A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 3 - 168 Stunden usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 172W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS 6 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 800µohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1730 шт: термін постачання 21-31 дні (днів) |
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IAUA250N04S6N008AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 51A; Idm: 1100A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 51A Pulsed drain current: 1100A Power dissipation: 172W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 960µΩ Mounting: SMD Gate charge: 109nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUA250N04S6N008AUMA1 | Infineon Technologies | SP005596860 | товар відсутній | |||||||||||||||||||
IAUA250N04S6N008AUMA1 | Infineon Technologies | Description: OPTIMOS POWER MOSFET Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Ta) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V Power Dissipation (Max): 172W (Tc) Vgs(th) (Max) @ Id: 3V @ 90µA Supplier Device Package: PG-HSOF-5-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7088 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUA250N08S5N018AUMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-HSOF-5 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Tj) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 150µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8715 pF @ 40 V | товар відсутній | |||||||||||||||||||
IAUA250N08S5N018AUMA1 | INFINEON | Description: INFINEON - IAUA250N08S5N018AUMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 250 A, 0.0015 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 250A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 238W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS-5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0015ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1435 шт: термін постачання 21-31 дні (днів) |
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IAUA250N08S5N018AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 35A; Idm: 813A; 238W; PG-HSOF-5 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET On-state resistance: 2.5mΩ Drain current: 35A Drain-source voltage: 80V Case: PG-HSOF-5 Gate charge: 125nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: 813A Power dissipation: 238W | товар відсутній | |||||||||||||||||||
IAUA250N08S5N018AUMA1 | Infineon Technologies | SP005412937 | товар відсутній | |||||||||||||||||||
IAUA250N08S5N018AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 35A; Idm: 813A; 238W; PG-HSOF-5 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET On-state resistance: 2.5mΩ Drain current: 35A Drain-source voltage: 80V Case: PG-HSOF-5 Gate charge: 125nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: 813A Power dissipation: 238W кількість в упаковці: 2000 шт | товар відсутній | |||||||||||||||||||
IAUA250N08S5N018AUMA1 | Infineon Technologies | MOSFETs N | на замовлення 2097 шт: термін постачання 21-30 дні (днів) |
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IAUA250N08S5N018AUMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-HSOF-5 Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Tj) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 150µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8715 pF @ 40 V | на замовлення 1970 шт: термін постачання 21-31 дні (днів) |
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IAUA250N08S5N018AUMA1 | INFINEON | Description: INFINEON - IAUA250N08S5N018AUMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 250 A, 0.0015 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 250A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 238W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS-5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0015ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1435 шт: термін постачання 21-31 дні (днів) |
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IAUAN04S7N004AUMA1 | Infineon Technologies | MOSFETs N | на замовлення 321 шт: термін постачання 21-30 дні (днів) |
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IAUAN04S7N004AUMA1 | Infineon Technologies | Description: IAUAN04S7N004AUMA1 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Ta), 570A (Tj) Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 3V @ 150µA Supplier Device Package: PG-HSOF-5-5 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUAN04S7N004AUMA1 | INFINEON | Description: INFINEON - IAUAN04S7N004AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 280 A, 390 µohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 280A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 238W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS 7 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 390µohm SVHC: No SVHC (27-Jun-2018) | на замовлення 1971 шт: термін постачання 21-31 дні (днів) |
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IAUAN04S7N004AUMA1 | Infineon Technologies | Description: IAUAN04S7N004AUMA1 Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Ta), 570A (Tj) Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 3V @ 150µA Supplier Device Package: PG-HSOF-5-5 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUAN04S7N005AUMA1 | Infineon Technologies | Description: IAUAN04S7N005AUMA1 Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj) Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V Power Dissipation (Max): 198W (Tc) Vgs(th) (Max) @ Id: 3V @ 110µA Supplier Device Package: PG-HSOF-5-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUAN04S7N005AUMA1 | Infineon Technologies | Description: IAUAN04S7N005AUMA1 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj) Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V Power Dissipation (Max): 198W (Tc) Vgs(th) (Max) @ Id: 3V @ 110µA Supplier Device Package: PG-HSOF-5-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUAN04S7N005AUMA1 | Infineon Technologies | MOSFETs N | на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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IAUAN04S7N005AUMA1 | INFINEON | Description: INFINEON - IAUAN04S7N005AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 250 A, 510 µohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 250A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 198W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS 7 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 510µohm SVHC: No SVHC (27-Jun-2018) | на замовлення 1939 шт: термін постачання 21-31 дні (днів) |
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IAUAN04S7N006AUMA1 | Infineon Technologies | Description: IAUAN04S7N006AUMA1 Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj) Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 3V @ 95µA Supplier Device Package: PG-HSOF-5-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUAN04S7N006AUMA1 | Infineon Technologies | MOSFETs N | на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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IAUAN04S7N006AUMA1 | INFINEON | Description: INFINEON - IAUAN04S7N006AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 250 A, 570 µohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 250A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 179W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS 7 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0 SVHC: No SVHC (27-Jun-2018) | на замовлення 1990 шт: термін постачання 21-31 дні (днів) |
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IAUAN04S7N006AUMA1 | Infineon Technologies | Description: IAUAN04S7N006AUMA1 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj) Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 3V @ 95µA Supplier Device Package: PG-HSOF-5-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUAN04S7N007AUMA1 | Infineon Technologies | MOSFETs N | на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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IAUAN04S7N007AUMA1 | INFINEON | Description: INFINEON - IAUAN04S7N007AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 200 A, 720 µohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 200A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 149W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS 7 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 720µohm SVHC: No SVHC (27-Jun-2018) | на замовлення 1990 шт: термін постачання 21-31 дні (днів) |
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IAUAN04S7N007AUMA1 | Infineon Technologies | Description: IAUAN04S7N007AUMA1 Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj) Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V Power Dissipation (Max): 149W (Tc) Vgs(th) (Max) @ Id: 3V @ 73µA Supplier Device Package: PG-HSOF-5-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUAN04S7N007AUMA1 | Infineon Technologies | Description: IAUAN04S7N007AUMA1 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj) Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V Power Dissipation (Max): 149W (Tc) Vgs(th) (Max) @ Id: 3V @ 73µA Supplier Device Package: PG-HSOF-5-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUAN04S7N008AUMA1 | Infineon Technologies | Description: IAUAN04S7N008AUMA1 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj) Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V Power Dissipation (Max): 133W (Tc) Vgs(th) (Max) @ Id: 3V @ 60µA Supplier Device Package: PG-HSOF-5-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUAN04S7N008AUMA1 | Infineon Technologies | MOSFETs N | на замовлення 490 шт: термін постачання 21-30 дні (днів) |
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IAUAN04S7N008AUMA1 | Infineon Technologies | Description: IAUAN04S7N008AUMA1 Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj) Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V Power Dissipation (Max): 133W (Tc) Vgs(th) (Max) @ Id: 3V @ 60µA Supplier Device Package: PG-HSOF-5-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUAN04S7N008AUMA1 | INFINEON | Description: INFINEON - IAUAN04S7N008AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 180 A, 820 µohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 180A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 133W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS 7 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 820µohm SVHC: No SVHC (27-Jun-2018) | на замовлення 1980 шт: термін постачання 21-31 дні (днів) |
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IAUAN04S7N009 | Infineon Technologies | IAUAN04S7N009 | товар відсутній | |||||||||||||||||||
IAUC100N04S6L014ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A Technology: OptiMOS™ 6 Mounting: SMD Case: PG-TDSON-8 Kind of package: reel; tape Power dissipation: 100W Drain current: 100A On-state resistance: 2mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 65nC Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 400A Drain-source voltage: 40V | товар відсутній | |||||||||||||||||||
IAUC100N04S6L014ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A Technology: OptiMOS™ 6 Mounting: SMD Case: PG-TDSON-8 Kind of package: reel; tape Power dissipation: 100W Drain current: 100A On-state resistance: 2mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 65nC Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 400A Drain-source voltage: 40V кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC100N04S6L014ATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | на замовлення 8613 шт: термін постачання 21-30 дні (днів) |
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IAUC100N04S6L014ATMA1 | Infineon Technologies | Description: IAUC100N04S6L014ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V Qualification: AEC-Q101 | на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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IAUC100N04S6L014ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC100N04S6L014ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC100N04S6L014ATMA1 | Infineon Technologies | Description: IAUC100N04S6L014ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V Qualification: AEC-Q101 | на замовлення 23283 шт: термін постачання 21-31 дні (днів) |
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IAUC100N04S6L020 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | товар відсутній | |||||||||||||||||||
IAUC100N04S6L020ATMA1 | Infineon Technologies | Description: IAUC100N04S6L020ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.04mOhm @ 50A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2V @ 32µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 14910 шт: термін постачання 21-31 дні (днів) |
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IAUC100N04S6L020ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUC100N04S6L020ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 19408 шт: термін постачання 21-30 дні (днів) |
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IAUC100N04S6L020ATMA1 | Infineon Technologies | Description: IAUC100N04S6L020ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.04mOhm @ 50A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2V @ 32µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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IAUC100N04S6L020ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC100N04S6L020ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A Technology: OptiMOS™ 6 Mounting: SMD Case: PG-TDSON-8 Kind of package: reel; tape Power dissipation: 75W Drain current: 100A On-state resistance: 2.7mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 46nC Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 400A Drain-source voltage: 40V | товар відсутній | |||||||||||||||||||
IAUC100N04S6L020ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A Technology: OptiMOS™ 6 Mounting: SMD Case: PG-TDSON-8 Kind of package: reel; tape Power dissipation: 75W Drain current: 100A On-state resistance: 2.7mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 46nC Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 400A Drain-source voltage: 40V кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC100N04S6L020ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC100N04S6L025 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | товар відсутній | |||||||||||||||||||
IAUC100N04S6L025ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 100A Automotive AEC-Q101 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC100N04S6L025ATMA1 | Infineon Technologies | Description: IAUC100N04S6L025ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2V @ 24µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 46582 шт: термін постачання 21-31 дні (днів) |
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IAUC100N04S6L025ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 83A; Idm: 400A; 62W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 83A Pulsed drain current: 400A Power dissipation: 62W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC100N04S6L025ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 100A Automotive AEC-Q101 8-Pin TDSON EP T/R | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUC100N04S6L025ATMA1 | INFINEON | Description: INFINEON - IAUC100N04S6L025ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.00206 ohm, TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 62W Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 6 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00206ohm SVHC: No SVHC (17-Jan-2023) | на замовлення 13507 шт: термін постачання 21-31 дні (днів) |
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IAUC100N04S6L025ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 83A; Idm: 400A; 62W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 83A Pulsed drain current: 400A Power dissipation: 62W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC100N04S6L025ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 8878 шт: термін постачання 21-30 дні (днів) |
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IAUC100N04S6L025ATMA1 | Infineon Technologies | Description: IAUC100N04S6L025ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2V @ 24µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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IAUC100N04S6L025ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 100A Automotive AEC-Q101 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC100N04S6L025ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC100N04S6L025ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 100A Automotive AEC-Q101 8-Pin TDSON EP T/R | на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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IAUC100N04S6L025ATMA1 | INFINEON | Description: INFINEON - IAUC100N04S6L025ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.00206 ohm, TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 62W Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 62W Bauform - Transistor: TDSON Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 6 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.00206ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00206ohm SVHC: No SVHC (17-Jan-2023) | на замовлення 13507 шт: термін постачання 21-31 дні (днів) |
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IAUC100N04S6N015ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 4443 шт: термін постачання 21-30 дні (днів) |
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IAUC100N04S6N015ATMA1 | Infineon Technologies | Description: IAUC100N04S6N015ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.55mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 50µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V Qualification: AEC-Q101 | на замовлення 6482 шт: термін постачання 21-31 дні (днів) |
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IAUC100N04S6N015ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC100N04S6N015ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC100N04S6N015ATMA1 | Infineon Technologies | Description: IAUC100N04S6N015ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.55mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 50µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V Qualification: AEC-Q101 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUC100N04S6N022ATMA1 | Infineon Technologies | Description: IAUC100N04S6N022ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.26mOhm @ 50A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 3V @ 32µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2421 pF @ 25 V Qualification: AEC-Q101 | на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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IAUC100N04S6N022ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC100N04S6N022ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC100N04S6N022ATMA1 | Infineon Technologies | Description: IAUC100N04S6N022ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.26mOhm @ 50A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 3V @ 32µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2421 pF @ 25 V Qualification: AEC-Q101 | на замовлення 11316 шт: термін постачання 21-31 дні (днів) |
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IAUC100N04S6N022ATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | на замовлення 988 шт: термін постачання 21-30 дні (днів) |
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IAUC100N04S6N022ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 96A Pulsed drain current: 400A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC100N04S6N022ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 96A Pulsed drain current: 400A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC100N04S6N028ATMA1 | INFINEON | Description: INFINEON - IAUC100N04S6N028ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.00221 ohm, PG-TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40 rohsCompliant: YES Dauer-Drainstrom Id: 100 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 62 Gate-Source-Schwellenspannung, max.: 2.6 euEccn: NLR Verlustleistung: 62 Bauform - Transistor: PG-TDSON Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8 Produktpalette: OptiMOS 6 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.00221 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.00221 SVHC: No SVHC (17-Jan-2023) | на замовлення 1871 шт: термін постачання 21-31 дні (днів) |
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IAUC100N04S6N028ATMA1 | Infineon Technologies | Description: IAUC100N04S6N028ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.86mOhm @ 50A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 3V @ 24µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUC100N04S6N028ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 8800 шт: термін постачання 21-30 дні (днів) |
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IAUC100N04S6N028ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 77A; Idm: 400A; 62W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 77A Pulsed drain current: 400A Power dissipation: 62W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC100N04S6N028ATMA1 | INFINEON | Description: INFINEON - IAUC100N04S6N028ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.00221 ohm, PG-TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 62W Bauform - Transistor: PG-TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 6 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00221ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 3661 шт: термін постачання 21-31 дні (днів) |
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IAUC100N04S6N028ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 77A; Idm: 400A; 62W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 77A Pulsed drain current: 400A Power dissipation: 62W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC100N04S6N028ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC100N04S6N028ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC100N04S6N028ATMA1 | Infineon Technologies | Description: IAUC100N04S6N028ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.86mOhm @ 50A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 3V @ 24µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 9890 шт: термін постачання 21-31 дні (днів) |
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IAUC100N08S5N031ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 100A TDSON-8-34 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 95µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5525 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 4018 шт: термін постачання 21-31 дні (днів) |
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IAUC100N08S5N031ATMA1 | Infineon Technologies | MOSFETs MOSFET_(75V 120V( | на замовлення 3585 шт: термін постачання 21-30 дні (днів) |
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IAUC100N08S5N031ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W Case: PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Technology: OptiMOS™ 5 Pulsed drain current: 400A Drain-source voltage: 80V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V | товар відсутній | |||||||||||||||||||
IAUC100N08S5N031ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W Case: PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Technology: OptiMOS™ 5 Pulsed drain current: 400A Drain-source voltage: 80V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC100N08S5N031ATMA1 | Infineon Technologies | N Channel Power MOSFET | товар відсутній | |||||||||||||||||||
IAUC100N08S5N031ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 100A TDSON-8-34 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 95µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5525 pF @ 40 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUC100N08S5N034ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-TDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 132A (Tj) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 78µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4559 pF @ 40 V | товар відсутній | |||||||||||||||||||
IAUC100N08S5N034ATMA1 | Infineon Technologies | MOSFETs MOSFET_(75V 120V( | товар відсутній | |||||||||||||||||||
IAUC100N08S5N034ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W Case: PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Technology: OptiMOS™ 5 Pulsed drain current: 400A Drain-source voltage: 80V Drain current: 22A On-state resistance: 4.8mΩ Type of transistor: N-MOSFET Power dissipation: 136W Polarisation: unipolar Gate charge: 66nC Kind of channel: enhanced Gate-source voltage: ±20V | товар відсутній | |||||||||||||||||||
IAUC100N08S5N034ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W Case: PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Technology: OptiMOS™ 5 Pulsed drain current: 400A Drain-source voltage: 80V Drain current: 22A On-state resistance: 4.8mΩ Type of transistor: N-MOSFET Power dissipation: 136W Polarisation: unipolar Gate charge: 66nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC100N08S5N034ATMA1 | Infineon Technologies | SP005423080 | товар відсутній | |||||||||||||||||||
IAUC100N08S5N043ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 100A 8TDSON-34 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 63µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 40 V Qualification: AEC-Q101 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUC100N08S5N043ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 3597 шт: термін постачання 21-30 дні (днів) |
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IAUC100N08S5N043ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W Case: PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Technology: OptiMOS™ 5 Pulsed drain current: 400A Drain-source voltage: 80V Drain current: 76A On-state resistance: 4.3mΩ Type of transistor: N-MOSFET Power dissipation: 120W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V | товар відсутній | |||||||||||||||||||
IAUC100N08S5N043ATMA1 | INFINEON | Description: INFINEON - IAUC100N08S5N043ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 100 A, 0.0036 ohm, PG-TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80 rohsCompliant: YES Dauer-Drainstrom Id: 100 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 125 Gate-Source-Schwellenspannung, max.: 3 euEccn: NLR Verlustleistung: 125 Bauform - Transistor: PG-TDSON Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8 Produktpalette: OptiMOS-5 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0036 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.0036 SVHC: No SVHC (17-Jan-2023) | на замовлення 6409 шт: термін постачання 21-31 дні (днів) |
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IAUC100N08S5N043ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W Case: PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Technology: OptiMOS™ 5 Pulsed drain current: 400A Drain-source voltage: 80V Drain current: 76A On-state resistance: 4.3mΩ Type of transistor: N-MOSFET Power dissipation: 120W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC100N08S5N043ATMA1 | Infineon Technologies | N Channel Power MOSFET | товар відсутній | |||||||||||||||||||
IAUC100N08S5N043ATMA1 | INFINEON | Description: INFINEON - IAUC100N08S5N043ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 100 A, 0.0036 ohm, PG-TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: PG-TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS-5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0036ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 4368 шт: термін постачання 21-31 дні (днів) |
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IAUC100N08S5N043ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 100A 8TDSON-34 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 63µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 40 V Qualification: AEC-Q101 | на замовлення 8580 шт: термін постачання 21-31 дні (днів) |
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IAUC100N10S5L040ATMA1 | Infineon Technologies | N-channel Enhancement mode Power MOSFET | товар відсутній | |||||||||||||||||||
IAUC100N10S5L040ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 100A 8TDSON-34 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 90µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V | товар відсутній | |||||||||||||||||||
IAUC100N10S5L040ATMA1 | INFINEON | Description: INFINEON - IAUC100N10S5L040ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 0.0033 ohm, TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 167W Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 167W Bauform - Transistor: TDSON Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0033ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0033ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 3124 шт: термін постачання 21-31 дні (днів) |
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IAUC100N10S5L040ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 5122 шт: термін постачання 21-30 дні (днів) |
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IAUC100N10S5L040ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 168W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 400A Power dissipation: 168W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC100N10S5L040ATMA1 | INFINEON | Description: INFINEON - IAUC100N10S5L040ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 0.0033 ohm, TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 167W Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0033ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 3124 шт: термін постачання 21-31 дні (днів) |
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IAUC100N10S5L040ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 168W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 400A Power dissipation: 168W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC100N10S5L040ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 100A 8TDSON-34 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 90µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V | на замовлення 4223 шт: термін постачання 21-31 дні (днів) |
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IAUC100N10S5L054ATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | товар відсутній | |||||||||||||||||||
IAUC100N10S5L054ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 400A; 130W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 17A Pulsed drain current: 400A Power dissipation: 130W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 8.1mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC100N10S5L054ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 400A; 130W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 17A Pulsed drain current: 400A Power dissipation: 130W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 8.1mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC100N10S5L054ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-TDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 101A (Tj) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 64µA Supplier Device Package: PG-TDSON-8-34 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3744 pF @ 50 V | товар відсутній | |||||||||||||||||||
IAUC100N10S5L054ATMA1 | Infineon Technologies | SP005423079 | товар відсутній | |||||||||||||||||||
IAUC100N10S5N040ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 167W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 400A Power dissipation: 167W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC100N10S5N040ATMA1 | INFINEON | Description: INFINEON - IAUC100N10S5N040ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 0.0034 ohm, TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 167W Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0034ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 7718 шт: термін постачання 21-31 дні (днів) |
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IAUC100N10S5N040ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 167W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 400A Power dissipation: 167W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC100N10S5N040ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 100A 8TDSON-34 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 90µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V | на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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IAUC100N10S5N040ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 100A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC100N10S5N040ATMA1 | Infineon Technologies | 100V, N-Ch, 4 mΩ max, Automotive MOSFET, SS08 (5x6), OptiMOS™-5 | товар відсутній | |||||||||||||||||||
IAUC100N10S5N040ATMA1 | INFINEON | Description: INFINEON - IAUC100N10S5N040ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 0.0034 ohm, TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 167W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 167W Bauform - Transistor: TDSON Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0034ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0034ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 7718 шт: термін постачання 21-31 дні (днів) |
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IAUC100N10S5N040ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 100A 8TDSON-34 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 90µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V | на замовлення 17971 шт: термін постачання 21-31 дні (днів) |
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IAUC100N10S5N040ATMA1 | Infineon Technologies | 100V, N-Ch, 4 mΩ max, Automotive MOSFET, SS08 (5x6), OptiMOS™-5 | товар відсутній | |||||||||||||||||||
IAUC100N10S5N040ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 10048 шт: термін постачання 21-30 дні (днів) |
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IAUC120N04S6L005ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 435A Automotive AEC-Q101 8-Pin TDSON EP T/R | на замовлення 4307 шт: термін постачання 21-31 дні (днів) |
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IAUC120N04S6L005ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 435A Automotive AEC-Q101 8-Pin TDSON EP T/R | на замовлення 75000 шт: термін постачання 21-31 дні (днів) |
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IAUC120N04S6L005ATMA1 | INFINEON | Description: INFINEON - IAUC120N04S6L005ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 120 A, 0.00043 ohm, TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 187W Bauform - Transistor: TDSON Anzahl der Pins: 8Pins Produktpalette: OptiMOS 6 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00043ohm | на замовлення 8899 шт: термін постачання 21-31 дні (днів) |
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IAUC120N04S6L005ATMA1 | Infineon Technologies | Description: IAUC120N04S6L005ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Rds On (Max) @ Id, Vgs: 0.55mOhm @ 60A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-TDSON-8-53 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11203 pF @ 25 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUC120N04S6L005ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 435A Automotive AEC-Q101 8-Pin TDSON EP T/R | на замовлення 4011 шт: термін постачання 21-31 дні (днів) |
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IAUC120N04S6L005ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 2719 шт: термін постачання 21-30 дні (днів) |
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IAUC120N04S6L005ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 60A; Idm: 1550A Technology: OptiMOS™ 6 Mounting: SMD Case: PG-TDSON-8 Kind of package: reel; tape Power dissipation: 187W Drain-source voltage: 40V Drain current: 60A On-state resistance: 0.8mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 177nC Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 1550A | товар відсутній | |||||||||||||||||||
IAUC120N04S6L005ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 435A Automotive AEC-Q101 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC120N04S6L005ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 60A; Idm: 1550A Technology: OptiMOS™ 6 Mounting: SMD Case: PG-TDSON-8 Kind of package: reel; tape Power dissipation: 187W Drain-source voltage: 40V Drain current: 60A On-state resistance: 0.8mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 177nC Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 1550A кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC120N04S6L005ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 435A T/R | товар відсутній | |||||||||||||||||||
IAUC120N04S6L005ATMA1 | INFINEON | Description: INFINEON - IAUC120N04S6L005ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 120 A, 0.00043 ohm, TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 187W Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 187W Bauform - Transistor: TDSON Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pins Produktpalette: OptiMOS 6 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 430µohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00043ohm | на замовлення 8899 шт: термін постачання 21-31 дні (днів) |
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IAUC120N04S6L005ATMA1 | Infineon Technologies | Description: IAUC120N04S6L005ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Rds On (Max) @ Id, Vgs: 0.55mOhm @ 60A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-TDSON-8-53 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11203 pF @ 25 V Qualification: AEC-Q101 | на замовлення 3601 шт: термін постачання 21-31 дні (днів) |
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IAUC120N04S6L008 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | товар відсутній | |||||||||||||||||||
IAUC120N04S6L008ATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 120A 8TDSON-33 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 60A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 90µA Supplier Device Package: PG-TDSON-8-33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 25 V Qualification: AEC-Q101 | на замовлення 9779 шт: термін постачання 21-31 дні (днів) |
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IAUC120N04S6L008ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 0.8mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level | товар відсутній | |||||||||||||||||||
IAUC120N04S6L008ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 0.8mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||||||
IAUC120N04S6L008ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 120A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC120N04S6L008ATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 120A 8TDSON-33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 60A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 90µA Supplier Device Package: PG-TDSON-8-33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 25 V Qualification: AEC-Q101 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUC120N04S6L008ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 8806 шт: термін постачання 21-30 дні (днів) |
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IAUC120N04S6L008ATMA1 | Infineon Technologies | IAUC120N04S6L008ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 40V 120A Automotive 8-Pin TDSON EP T/R - Arrow.com | товар відсутній | |||||||||||||||||||
IAUC120N04S6L009 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | товар відсутній | |||||||||||||||||||
IAUC120N04S6L009ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 150A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC120N04S6L009ATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 150A TDSON-8-34 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 960mOhm @ 60A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 90µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7806 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 | на замовлення 22720 шт: термін постачання 21-31 дні (днів) |
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IAUC120N04S6L009ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 150A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC120N04S6L009ATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 150A TDSON-8-34 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 960mOhm @ 60A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 90µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7806 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 | на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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IAUC120N04S6L009ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC120N04S6L009ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC120N04S6L009ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 3591 шт: термін постачання 21-30 дні (днів) |
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IAUC120N04S6L012ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 150A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC120N04S6L012ATMA1 | INFINEON | Description: INFINEON - IAUC120N04S6L012ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 150 A, 0.00096 ohm, TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 150A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 115W Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 6 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00096ohm | на замовлення 19652 шт: термін постачання 21-31 дні (днів) |
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IAUC120N04S6L012ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 115W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC120N04S6L012ATMA1 | INFINEON | Description: INFINEON - IAUC120N04S6L012ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 150 A, 0.00096 ohm, TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 150A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 115W Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 115W Bauform - Transistor: TDSON Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 6 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 960µohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00096ohm | на замовлення 19652 шт: термін постачання 21-31 дні (днів) |
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IAUC120N04S6L012ATMA1 | Infineon Technologies | Description: IAUC120N04S6L012ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.21mOhm @ 60A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2V @ 60µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4832 pF @ 25 V Qualification: AEC-Q101 | на замовлення 28142 шт: термін постачання 21-31 дні (днів) |
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IAUC120N04S6L012ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 115W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC120N04S6L012ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 4601 шт: термін постачання 21-30 дні (днів) |
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IAUC120N04S6L012ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 150A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC120N04S6L012ATMA1 | Infineon Technologies | Description: IAUC120N04S6L012ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.21mOhm @ 60A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2V @ 60µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4832 pF @ 25 V Qualification: AEC-Q101 | на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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IAUC120N04S6N006ATMA1 | Infineon Technologies | Description: IAUC120N04S6N006ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Rds On (Max) @ Id, Vgs: 0.6mOhm @ 60A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 3V @ 130µA Supplier Device Package: PG-TDSON-8-53 Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10117 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUC120N04S6N006ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 4924 шт: термін постачання 21-30 дні (днів) |
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IAUC120N04S6N006ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 405A T/R | товар відсутній | |||||||||||||||||||
IAUC120N04S6N006ATMA1 | Infineon Technologies | IAUC120N04S6N006ATMA1 | товар відсутній | |||||||||||||||||||
IAUC120N04S6N006ATMA1 | Infineon Technologies | Description: IAUC120N04S6N006ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Rds On (Max) @ Id, Vgs: 0.6mOhm @ 60A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 3V @ 130µA Supplier Device Package: PG-TDSON-8-53 Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10117 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUC120N04S6N008ATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 60A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3V @ 90µA Supplier Device Package: PG-TDSON-8-43 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 25 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUC120N04S6N008ATMA1 | Infineon Technologies | MOSFET | товар відсутній | |||||||||||||||||||
IAUC120N04S6N008ATMA1 | Infineon Technologies | Automotive Power Mosfet | товар відсутній | |||||||||||||||||||
IAUC120N04S6N009ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 0.9mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC120N04S6N009ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 120A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC120N04S6N009ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 1486 шт: термін постачання 21-30 дні (днів) |
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IAUC120N04S6N009ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 120A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC120N04S6N009ATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 120A 8TDSON-33 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 60A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 90µA Supplier Device Package: PG-TDSON-8-33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUC120N04S6N009ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 120A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC120N04S6N009ATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 120A 8TDSON-33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 60A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 90µA Supplier Device Package: PG-TDSON-8-33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUC120N04S6N009ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 0.9mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level | товар відсутній | |||||||||||||||||||
IAUC120N04S6N010 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | товар відсутній | |||||||||||||||||||
IAUC120N04S6N010ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 150A Automotive AEC-Q101 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC120N04S6N010ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 150A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC120N04S6N010ATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 150A TDSON-8-34 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 60A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3V @ 90µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6878 pF @ 25 V | на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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IAUC120N04S6N010ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 150A Automotive AEC-Q101 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC120N04S6N010ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 5401 шт: термін постачання 21-30 дні (днів) |
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IAUC120N04S6N010ATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 150A TDSON-8-34 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 60A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3V @ 90µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6878 pF @ 25 V | на замовлення 14881 шт: термін постачання 21-31 дні (днів) |
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IAUC120N04S6N013ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 3633 шт: термін постачання 21-30 дні (днів) |
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IAUC120N04S6N013ATMA1 | Infineon Technologies | Description: IAUC120N04S6N013ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.34mOhm @ 60A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 3V @ 60µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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IAUC120N04S6N013ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 150A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC120N04S6N013ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 150A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC120N04S6N013ATMA1 | Infineon Technologies | Description: IAUC120N04S6N013ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.34mOhm @ 60A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 3V @ 60µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 13802 шт: термін постачання 21-31 дні (днів) |
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IAUC120N06S5L011ATMA1 | Infineon Technologies | Description: MOSFET_)40V 60V) Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310A (Tj) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 130µA Supplier Device Package: PG-TDSON-8-53 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V | на замовлення 2124 шт: термін постачання 21-31 дні (днів) |
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IAUC120N06S5L011ATMA1 | Infineon Technologies | IAUC120N06S5L011 Trans MOSFET T/R | товар відсутній | |||||||||||||||||||
IAUC120N06S5L011ATMA1 | Infineon Technologies | Description: MOSFET_)40V 60V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310A (Tj) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 130µA Supplier Device Package: PG-TDSON-8-53 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V | товар відсутній | |||||||||||||||||||
IAUC120N06S5L011ATMA1 | Infineon Technologies | MOSFETs N | товар відсутній | |||||||||||||||||||
IAUC120N06S5L015ATMA1 | Infineon Technologies | MOSFETs N | товар відсутній | |||||||||||||||||||
IAUC120N06S5L015ATMA1 | Infineon Technologies | Description: MOSFET_)40V 60V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 235A (Tj) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 94µA Supplier Device Package: PG-TDSON-8-43 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8193 pF @ 30 V | товар відсутній | |||||||||||||||||||
IAUC120N06S5L015ATMA1 | Infineon Technologies | Automotive AEC-Q101 Power Mosfet | товар відсутній | |||||||||||||||||||
IAUC120N06S5L022ATMA1 | Infineon Technologies | Description: MOSFET_)40V 60V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tj) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 65µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5651 pF @ 30 V | товар відсутній | |||||||||||||||||||
IAUC120N06S5L022ATMA1 | Infineon Technologies | Automotive Power Mosfet | товар відсутній | |||||||||||||||||||
IAUC120N06S5L022ATMA1 | Infineon Technologies | Description: MOSFET_)40V 60V) Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tj) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 65µA Supplier Device Package: PG-TDSON-8-34 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5651 pF @ 30 V | на замовлення 4888 шт: термін постачання 21-31 дні (днів) |
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IAUC120N06S5L022ATMA1 | Infineon Technologies | MOSFETs N | товар відсутній | |||||||||||||||||||
IAUC120N06S5L032ATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 120A TDSON-8-34 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 44µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V | на замовлення 31306 шт: термін постачання 21-31 дні (днів) |
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IAUC120N06S5L032ATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 129A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC120N06S5L032ATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 120A TDSON-8-34 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 44µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V | на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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IAUC120N06S5L032ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 9903 шт: термін постачання 21-30 дні (днів) |
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IAUC120N06S5L032ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Pulsed drain current: 364A Power dissipation: 94W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 51.5nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC120N06S5L032ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Pulsed drain current: 364A Power dissipation: 94W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 51.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC120N06S5L032ATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 129A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC120N06S5N011ATMA1 | Infineon Technologies | MOSFETs N | товар відсутній | |||||||||||||||||||
IAUC120N06S5N011ATMA1 | Infineon Technologies | Automotive Power Mosfet | товар відсутній | |||||||||||||||||||
IAUC120N06S5N011ATMA1 | Infineon Technologies | Description: MOSFET_)40V 60V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310A (Tj) Rds On (Max) @ Id, Vgs: 1.12mOhm @ 60A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 130µA Supplier Device Package: PG-TDSON-8-53 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9822 pF @ 30 V | товар відсутній | |||||||||||||||||||
IAUC120N06S5N015ATMA1 | Infineon Technologies | IAUC120N06S5N015ATMA1 | товар відсутній | |||||||||||||||||||
IAUC120N06S5N015ATMA1 | Infineon Technologies | Description: MOSFET_)40V 60V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 94µA Supplier Device Package: PG-TDSON-8-43 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUC120N06S5N017ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Pulsed drain current: 757A Power dissipation: 167W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Gate charge: 95.9nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC120N06S5N017ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Pulsed drain current: 757A Power dissipation: 167W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Gate charge: 95.9nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC120N06S5N017ATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 226A Automotive T/R | товар відсутній | |||||||||||||||||||
IAUC120N06S5N017ATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 120A TDSON-8-43 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 94µA Supplier Device Package: PG-TDSON-8-43 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V | на замовлення 12878 шт: термін постачання 21-31 дні (днів) |
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IAUC120N06S5N017ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 8251 шт: термін постачання 21-30 дні (днів) |
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IAUC120N06S5N017ATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 226A Automotive 8-Pin TDSON EP T/R | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUC120N06S5N017ATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 226A Automotive T/R | товар відсутній | |||||||||||||||||||
IAUC120N06S5N017ATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 120A TDSON-8-43 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 94µA Supplier Device Package: PG-TDSON-8-43 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V | на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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IAUC120N06S5N022ATMA1 | Infineon Technologies | MOSFETs N | товар відсутній | |||||||||||||||||||
IAUC120N06S5N022ATMA1 | Infineon Technologies | Automotive AEC-Q101 Power Mosfet | товар відсутній | |||||||||||||||||||
IAUC120N06S5N022ATMA1 | Infineon Technologies | Description: MOSFET_)40V 60V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tj) Rds On (Max) @ Id, Vgs: 2.24mOhm @ 60A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 65µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 30 V | товар відсутній | |||||||||||||||||||
IAUC120N06S5N032ATMA1 | Infineon Technologies | Description: MOSFET_)40V 60V) Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Rds On (Max) @ Id, Vgs: 3.23mOhm @ 60A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 44µA Supplier Device Package: PG-TDSON-8-34 Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3446 pF @ 30 V | на замовлення 7247 шт: термін постачання 21-31 дні (днів) |
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IAUC120N06S5N032ATMA1 | Infineon Technologies | Description: MOSFET_)40V 60V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Rds On (Max) @ Id, Vgs: 3.23mOhm @ 60A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 44µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3446 pF @ 30 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUC120N06S5N032ATMA1 | Infineon Technologies | MOSFETs N | товар відсутній | |||||||||||||||||||
IAUC120N06S5N032ATMA1 | Infineon Technologies | Automotive Power Mosfet | товар відсутній | |||||||||||||||||||
IAUC24N10S5L300ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 24A TDSON-8-33 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 12µA Supplier Device Package: PG-TDSON-8-33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V | на замовлення 13373 шт: термін постачання 21-31 дні (днів) |
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IAUC24N10S5L300ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 8829 шт: термін постачання 21-30 дні (днів) |
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IAUC24N10S5L300ATMA1 | Infineon Technologies | Opti MOST-5 Power Transistor | товар відсутній | |||||||||||||||||||
IAUC24N10S5L300ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 96A; 38W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 16A Pulsed drain current: 96A Power dissipation: 38W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC24N10S5L300ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 24A TDSON-8-33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 12µA Supplier Device Package: PG-TDSON-8-33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V | на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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IAUC24N10S5L300ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 96A; 38W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 16A Pulsed drain current: 96A Power dissipation: 38W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC24N10S5L300ATMA1 | Infineon Technologies | Opti MOST-5 Power Transistor | на замовлення 5005 шт: термін постачання 21-31 дні (днів) |
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IAUC26N10S5L245ATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | товар відсутній | |||||||||||||||||||
IAUC26N10S5L245ATMA1 | Infineon Technologies | SP005423082 | товар відсутній | |||||||||||||||||||
IAUC26N10S5L245ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7A; Idm: 104A; 40W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 7A Pulsed drain current: 104A Power dissipation: 40W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 37.8mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC26N10S5L245ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7A; Idm: 104A; 40W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 7A Pulsed drain current: 104A Power dissipation: 40W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 37.8mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC26N10S5L245ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-TDSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tj) Rds On (Max) @ Id, Vgs: 24.5mOhm @ 13A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 13µA Supplier Device Package: PG-TDSON-8-33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 762 pF @ 50 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUC26N10S5L245ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-TDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tj) Rds On (Max) @ Id, Vgs: 24.5mOhm @ 13A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 13µA Supplier Device Package: PG-TDSON-8-33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 762 pF @ 50 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUC28N08S5L230ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 20A; Idm: 112A; 38W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 38W Polarisation: unipolar Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 112A Drain-source voltage: 80V Drain current: 20A On-state resistance: 23mΩ кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC28N08S5L230ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 28A 8TDSON-33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 14A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 2V @ 11µA Supplier Device Package: PG-TDSON-8-33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 40 V Qualification: AEC-Q101 | на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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IAUC28N08S5L230ATMA1 | Infineon Technologies | Automotive Power Mosfet | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUC28N08S5L230ATMA1 | INFINEON | Description: INFINEON - IAUC28N08S5L230ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 28 A, 0.015 ohm, TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80 rohsCompliant: YES Dauer-Drainstrom Id: 28 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 38 Gate-Source-Schwellenspannung, max.: 1.6 euEccn: NLR Verlustleistung: 38 Bauform - Transistor: TDSON Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8 Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.015 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.015 SVHC: No SVHC (17-Jan-2023) | на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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IAUC28N08S5L230ATMA1 | Infineon Technologies | Automotive Power Mosfet | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUC28N08S5L230ATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | на замовлення 4931 шт: термін постачання 21-30 дні (днів) |
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IAUC28N08S5L230ATMA1 | INFINEON | Description: INFINEON - IAUC28N08S5L230ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 28 A, 0.015 ohm, TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80 rohsCompliant: YES Dauer-Drainstrom Id: 28 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 38 Gate-Source-Schwellenspannung, max.: 1.6 euEccn: NLR Verlustleistung: 38 Bauform - Transistor: TDSON Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8 Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.015 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.015 SVHC: No SVHC (17-Jan-2023) | на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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IAUC28N08S5L230ATMA1 | Infineon Technologies | H8 84R5 0.1% 25PPM | товар відсутній | |||||||||||||||||||
IAUC28N08S5L230ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 28A 8TDSON-33 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 14A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 2V @ 11µA Supplier Device Package: PG-TDSON-8-33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 40 V Qualification: AEC-Q101 | на замовлення 14043 шт: термін постачання 21-31 дні (днів) |
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IAUC28N08S5L230ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 20A; Idm: 112A; 38W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 38W Polarisation: unipolar Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 112A Drain-source voltage: 80V Drain current: 20A On-state resistance: 23mΩ | товар відсутній | |||||||||||||||||||
IAUC28N08S5L230ATMA1 Код товару: 193844 | Транзистори > Польові N-канальні | товар відсутній | ||||||||||||||||||||
IAUC40N08S5L140ATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | товар відсутній | |||||||||||||||||||
IAUC40N08S5L140ATMA1 | Infineon Technologies | SP005422123 | товар відсутній | |||||||||||||||||||
IAUC40N08S5L140ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-TDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2V @ 15µA Supplier Device Package: PG-TDSON-8-33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 40 V | товар відсутній | |||||||||||||||||||
IAUC40N08S5L140ATMA1 | INFINEON TECHNOLOGIES | IAUC40N08S5L140 SMD N channel transistors | товар відсутній | |||||||||||||||||||
IAUC40N08S5L140ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-TDSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2V @ 15µA Supplier Device Package: PG-TDSON-8-33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 40 V | на замовлення 4232 шт: термін постачання 21-31 дні (днів) |
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IAUC41N06S5L100ATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 41A TDSON-8-33 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tj) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 13µA Supplier Device Package: PG-TDSON-8-33 Part Status: Active Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V | на замовлення 29873 шт: термін постачання 21-31 дні (днів) |
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IAUC41N06S5L100ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 115A; 42W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 115A Power dissipation: 42W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 13.9mΩ Mounting: SMD Gate charge: 16.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC41N06S5L100ATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 41A TDSON-8-33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tj) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 13µA Supplier Device Package: PG-TDSON-8-33 Part Status: Active Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V | на замовлення 29873 шт: термін постачання 21-31 дні (днів) |
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IAUC41N06S5L100ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 115A; 42W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 115A Power dissipation: 42W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 13.9mΩ Mounting: SMD Gate charge: 16.4nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC41N06S5L100ATMA1 | Infineon Technologies | MOSFET MOSFET_)40V 60V) | на замовлення 3052 шт: термін постачання 21-30 дні (днів) |
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IAUC41N06S5L100ATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 41A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC41N06S5N102ATMA1 | Infineon Technologies | Description: MOSFET_)40V 60V) PG-TDSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tj) Rds On (Max) @ Id, Vgs: 10.2mOhm @ 20A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 13µA Supplier Device Package: PG-TDSON-8-33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1112.1 pF @ 30 V Qualification: AEC-Q101 | на замовлення 14520 шт: термін постачання 21-31 дні (днів) |
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IAUC41N06S5N102ATMA1 | Infineon Technologies | MOSFET MOSFET_)40V 60V) | на замовлення 1761 шт: термін постачання 21-30 дні (днів) |
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IAUC41N06S5N102ATMA1 | Infineon Technologies | SP003244390 | товар відсутній | |||||||||||||||||||
IAUC41N06S5N102ATMA1 | Infineon Technologies | Description: MOSFET_)40V 60V) PG-TDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tj) Rds On (Max) @ Id, Vgs: 10.2mOhm @ 20A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 13µA Supplier Device Package: PG-TDSON-8-33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1112.1 pF @ 30 V Qualification: AEC-Q101 | на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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IAUC41N06S5N102ATMA1 | INFINEON TECHNOLOGIES | IAUC41N06S5N102 SMD N channel transistors | товар відсутній | |||||||||||||||||||
IAUC45N04S6L063HATMA1 | Infineon Technologies | MOSFETs N | на замовлення 9582 шт: термін постачання 21-30 дні (днів) |
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IAUC45N04S6L063HATMA1 | Infineon Technologies | Automotive Power Mosfet | товар відсутній | |||||||||||||||||||
IAUC45N04S6L063HATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 15A; Idm: 134A; 41W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 15A Pulsed drain current: 134A Power dissipation: 41W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC45N04S6L063HATMA1 | Infineon Technologies | SP004134516 | товар відсутній | |||||||||||||||||||
IAUC45N04S6L063HATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 15A; Idm: 134A; 41W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 15A Pulsed drain current: 134A Power dissipation: 41W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC45N04S6L063HATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 45A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 45A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 9µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUC45N04S6L063HATMA1 | Infineon Technologies | SP004134516 | товар відсутній | |||||||||||||||||||
IAUC45N04S6L063HATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 45A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 45A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 9µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUC45N04S6N070HATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 14A; Idm: 119A; 41W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 14A Pulsed drain current: 119A Power dissipation: 41W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC45N04S6N070HATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 45A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 45A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V Rds On (Max) @ Id, Vgs: 7mOhm @ 22A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 3V @ 9µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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IAUC45N04S6N070HATMA1 | Infineon Technologies | MOSFETs N | на замовлення 8176 шт: термін постачання 21-30 дні (днів) |
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IAUC45N04S6N070HATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 45A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 45A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V Rds On (Max) @ Id, Vgs: 7mOhm @ 22A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 3V @ 9µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | на замовлення 12695 шт: термін постачання 21-31 дні (днів) |
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IAUC45N04S6N070HATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 55A Automotive T/R | товар відсутній | |||||||||||||||||||
IAUC45N04S6N070HATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 14A; Idm: 119A; 41W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 14A Pulsed drain current: 119A Power dissipation: 41W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC50N08S5L096ATMA1 | Infineon Technologies | MOSFETs N | товар відсутній | |||||||||||||||||||
IAUC50N08S5L096ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-TDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 24µA Supplier Device Package: PG-TDSON-8-33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1684 pF @ 40 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUC50N08S5L096ATMA1 | Infineon Technologies | SP005423083 | товар відсутній | |||||||||||||||||||
IAUC50N08S5L096ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 16A; Idm: 200A; 60W; PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET On-state resistance: 13.9mΩ Drain current: 16A Drain-source voltage: 80V Case: PG-TDSON-8 Gate charge: 29nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: 200A Power dissipation: 60W | товар відсутній | |||||||||||||||||||
IAUC50N08S5L096ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 16A; Idm: 200A; 60W; PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET On-state resistance: 13.9mΩ Drain current: 16A Drain-source voltage: 80V Case: PG-TDSON-8 Gate charge: 29nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: 200A Power dissipation: 60W кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC50N08S5L096ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-TDSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 24µA Supplier Device Package: PG-TDSON-8-33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1684 pF @ 40 V | на замовлення 6138 шт: термін постачання 21-31 дні (днів) |
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IAUC50N08S5N102ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-TDSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Rds On (Max) @ Id, Vgs: 10.2mOhm @ 25A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 24µA Supplier Device Package: PG-TDSON-8-33 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1394 pF @ 40 V | на замовлення 6540 шт: термін постачання 21-31 дні (днів) |
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IAUC50N08S5N102ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 200A; 60W; PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET On-state resistance: 15.8mΩ Drain current: 12A Drain-source voltage: 80V Case: PG-TDSON-8 Gate charge: 21nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: 200A Power dissipation: 60W кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC50N08S5N102ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-TDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Rds On (Max) @ Id, Vgs: 10.2mOhm @ 25A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 24µA Supplier Device Package: PG-TDSON-8-33 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1394 pF @ 40 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUC50N08S5N102ATMA1 | Infineon Technologies | MOSFETs N | товар відсутній | |||||||||||||||||||
IAUC50N08S5N102ATMA1 | Infineon Technologies | SP005423084 | товар відсутній | |||||||||||||||||||
IAUC50N08S5N102ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 200A; 60W; PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET On-state resistance: 15.8mΩ Drain current: 12A Drain-source voltage: 80V Case: PG-TDSON-8 Gate charge: 21nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: 200A Power dissipation: 60W | товар відсутній | |||||||||||||||||||
IAUC60N04S6L030HATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 60A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 75W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 25µA Supplier Device Package: PG-TDSON-8-56 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUC60N04S6L030HATMA1 | Infineon Technologies | MOSFETs N | на замовлення 11979 шт: термін постачання 21-30 дні (днів) |
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IAUC60N04S6L030HATMA1 | Infineon Technologies | SP004134512 | товар відсутній | |||||||||||||||||||
IAUC60N04S6L030HATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 22A Pulsed drain current: 311A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC60N04S6L030HATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 60A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 75W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 25µA Supplier Device Package: PG-TDSON-8-56 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUC60N04S6L030HATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 22A Pulsed drain current: 311A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC60N04S6L030HATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 60A 8TDSON Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 75W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 25µA Supplier Device Package: PG-TDSON-8-56 Grade: Automotive Qualification: AEC-Q101 | на замовлення 18336 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6L030HATMA1 | INFINEON | Description: INFINEON - IAUC60N04S6L030HATMA1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 60 A, 60 A, 0.0023 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 40V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 60A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0023ohm Verlustleistung, p-Kanal: 75W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 6 Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0023ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 75W Betriebstemperatur, max.: 175°C SVHC: No SVHC (23-Jan-2024) | на замовлення 19491 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6L039 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | товар відсутній | |||||||||||||||||||
IAUC60N04S6L039ATMA1 | Infineon Technologies | Description: IAUC60N04S6L039ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.02mOhm @ 30A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1179 pF @ 25 V Qualification: AEC-Q101 | на замовлення 16142 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6L039ATMA1 | INFINEON | Description: INFINEON - IAUC60N04S6L039ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 60 A, 0.00328 ohm, TDSON, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Verlustleistung Pd: 42W Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 42W Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.00328ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00328ohm | на замовлення 5928 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6L039ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 60A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC60N04S6L039ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 54A; Idm: 240A; 42W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 54A Pulsed drain current: 240A Power dissipation: 42W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 5.9mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC60N04S6L039ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 60A Automotive AEC-Q101 8-Pin TDSON EP T/R | на замовлення 15097 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6L039ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 54A; Idm: 240A; 42W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 54A Pulsed drain current: 240A Power dissipation: 42W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 5.9mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC60N04S6L039ATMA1 | Infineon Technologies | Description: IAUC60N04S6L039ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.02mOhm @ 30A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1179 pF @ 25 V Qualification: AEC-Q101 | на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6L039ATMA1 | INFINEON | Description: INFINEON - IAUC60N04S6L039ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 60 A, 0.00328 ohm, TDSON, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 42W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00328ohm | на замовлення 5928 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6L039ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 60A Automotive AEC-Q101 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC60N04S6L039ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 3649 шт: термін постачання 21-30 дні (днів) |
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IAUC60N04S6L039ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 60A Automotive AEC-Q101 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC60N04S6L045HATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 18A; Idm: 193A; 52W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 18A Pulsed drain current: 193A Power dissipation: 52W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 6mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC60N04S6L045HATMA1 | Infineon Technologies | MOSFETs N | на замовлення 5558 шт: термін постачання 21-30 дні (днів) |
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IAUC60N04S6L045HATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 60A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 52W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 25V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 13µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | на замовлення 29218 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6L045HATMA1 | INFINEON | Description: INFINEON - IAUC60N04S6L045HATMA1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 60 A, 60 A, 0.0037 ohm tariffCode: 85412900 Wandlerpolarität: n-Kanal Betriebstemperatur, max.: 175 productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand, p-Kanal: 0.0037 Anzahl der Pins: 8 Dauer-Drainstrom Id, p-Kanal: 60 Dauer-Drainstrom Id, n-Kanal: 60 MSL: MSL 1 - unbegrenzt hazardous: false Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10 Produktpalette: OptiMOS 6 Series Bauform - Transistor: TDSON Gate-Source-Schwellenspannung, max.: 1.6 euEccn: NLR rohsCompliant: YES Verlustleistung, n-Kanal: 52 Drain-Source-Spannung Vds: 40 Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 40 Verlustleistung, p-Kanal: 52 Drain-Source-Spannung Vds, n-Kanal: 40 Drain-Source-Durchgangswiderstand, n-Kanal: 0.0037 Dauer-Drainstrom Id: 60 rohsPhthalatesCompliant: YES Betriebswiderstand, Rds(on): 0.0037 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 usEccn: EAR99 Transistormontage: Oberflächenmontage Verlustleistung Pd: 52 SVHC: No SVHC (08-Jul-2021) | на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6L045HATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 60A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 52W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 25V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 13µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6L045HATMA1 | INFINEON | Description: INFINEON - IAUC60N04S6L045HATMA1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 60 A, 60 A, 0.0037 ohm tariffCode: 85412900 Wandlerpolarität: n-Kanal Betriebstemperatur, max.: 175 productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand, p-Kanal: 0.0037 Anzahl der Pins: 8 Dauer-Drainstrom Id, p-Kanal: 60 Dauer-Drainstrom Id, n-Kanal: 60 MSL: MSL 1 - unbegrenzt hazardous: false Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10 Produktpalette: OptiMOS 6 Series Bauform - Transistor: TDSON Gate-Source-Schwellenspannung, max.: 1.6 euEccn: NLR rohsCompliant: YES Verlustleistung, n-Kanal: 52 Drain-Source-Spannung Vds: 40 Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 40 Verlustleistung, p-Kanal: 52 Drain-Source-Spannung Vds, n-Kanal: 40 Drain-Source-Durchgangswiderstand, n-Kanal: 0.0037 Dauer-Drainstrom Id: 60 rohsPhthalatesCompliant: YES Betriebswiderstand, Rds(on): 0.0037 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 usEccn: EAR99 Transistormontage: Oberflächenmontage Verlustleistung Pd: 52 SVHC: No SVHC (08-Jul-2021) | на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6L045HATMA1 | Infineon Technologies | SP004134514 | товар відсутній | |||||||||||||||||||
IAUC60N04S6L045HATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 18A; Idm: 193A; 52W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 18A Pulsed drain current: 193A Power dissipation: 52W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 6mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC60N04S6L045HATMA1 | Infineon Technologies | Automotive Power Mosfet | товар відсутній | |||||||||||||||||||
IAUC60N04S6N031HATMA1 | Infineon Technologies | SP003863382 | товар відсутній | |||||||||||||||||||
IAUC60N04S6N031HATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 22A Pulsed drain current: 311A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC60N04S6N031HATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 60A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 75W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 3V @ 25µA Supplier Device Package: PG-TDSON-8-56 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | на замовлення 10625 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6N031HATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 22A Pulsed drain current: 311A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC60N04S6N031HATMA1 | Infineon Technologies | MOSFETs N | на замовлення 5337 шт: термін постачання 21-30 дні (днів) |
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IAUC60N04S6N031HATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 60A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 75W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 3V @ 25µA Supplier Device Package: PG-TDSON-8-56 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6N044 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | товар відсутній | |||||||||||||||||||
IAUC60N04S6N044ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 50A; Idm: 240A; 42W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 240A Power dissipation: 42W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC60N04S6N044ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 60A Automotive AEC-Q101 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC60N04S6N044ATMA1 | INFINEON | Description: INFINEON - IAUC60N04S6N044ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 60 A, 0.00353 ohm, PG-TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 42W Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 42W Bauform - Transistor: PG-TDSON Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pins Produktpalette: OptiMOS 6 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.00353ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00353ohm | на замовлення 3501 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6N044ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 60A Automotive AEC-Q101 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC60N04S6N044ATMA1 | Infineon Technologies | Description: IAUC60N04S6N044ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 14µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 10517 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6N044ATMA1 | INFINEON | Description: INFINEON - IAUC60N04S6N044ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 60 A, 0.00353 ohm, PG-TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 42W Bauform - Transistor: PG-TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 6 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00353ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 3401 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6N044ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 60A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC60N04S6N044ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 50A; Idm: 240A; 42W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 240A Power dissipation: 42W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC60N04S6N044ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 60A Automotive AEC-Q101 8-Pin TDSON EP T/R | на замовлення 4880 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6N044ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 2428 шт: термін постачання 21-30 дні (днів) |
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IAUC60N04S6N044ATMA1 | Infineon Technologies | Description: IAUC60N04S6N044ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 14µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6N050HATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 60A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 52W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1027pF @ 25V Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 3V @ 13µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUC60N04S6N050HATMA1 | Infineon Technologies | Trans MOSFET N-CH 4 | товар відсутній | |||||||||||||||||||
IAUC60N04S6N050HATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 16A Pulsed drain current: 171A Power dissipation: 52W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC60N04S6N050HATMA1 | Infineon Technologies | MOSFETs N | на замовлення 2996 шт: термін постачання 21-30 дні (днів) |
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IAUC60N04S6N050HATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 60A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 52W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1027pF @ 25V Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 3V @ 13µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | на замовлення 1031 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6N050HATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 16A Pulsed drain current: 171A Power dissipation: 52W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC60N06S5L073ATMA1 | Infineon Technologies | Automotive Power Mosfet | товар відсутній | |||||||||||||||||||
IAUC60N06S5L073ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Pulsed drain current: 168A Power dissipation: 52W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 22.6nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC60N06S5L073ATMA1 | Infineon Technologies | MOSFETs N | товар відсутній | |||||||||||||||||||
IAUC60N06S5L073ATMA1 | Infineon Technologies | Description: MOSFET_)40V 60V) PG-TDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 19µA Supplier Device Package: PG-TDSON-8-33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 30 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUC60N06S5L073ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Pulsed drain current: 168A Power dissipation: 52W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 22.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC60N06S5L073ATMA1 | Infineon Technologies | Description: MOSFET_)40V 60V) PG-TDSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 19µA Supplier Device Package: PG-TDSON-8-33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 2438 шт: термін постачання 21-31 дні (днів) |
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IAUC60N06S5N074ATMA1 | Infineon Technologies | Description: MOSFET_)40V 60V) PG-TDSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 19µA Supplier Device Package: PG-TDSON-8-33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1461 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 3607 шт: термін постачання 21-31 дні (днів) |
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IAUC60N06S5N074ATMA1 | Infineon Technologies | Description: MOSFET_)40V 60V) PG-TDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 19µA Supplier Device Package: PG-TDSON-8-33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1461 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUC60N06S5N074ATMA1 | Infineon Technologies | SP005423477 | товар відсутній | |||||||||||||||||||
IAUC60N06S5N074ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Pulsed drain current: 168A Power dissipation: 52W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC60N06S5N074ATMA1 | Infineon Technologies | MOSFETs N | товар відсутній | |||||||||||||||||||
IAUC60N06S5N074ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Pulsed drain current: 168A Power dissipation: 52W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC60N10S5L110ATMA1 | Infineon Technologies | SP005422122 | товар відсутній | |||||||||||||||||||
IAUC60N10S5L110ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Pulsed drain current: 240A Power dissipation: 88W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 15.3mΩ Mounting: SMD Gate charge: 24.1nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC60N10S5L110ATMA1 | Infineon Technologies | MOSFETs N | товар відсутній | |||||||||||||||||||
IAUC60N10S5L110ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-TDSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: PG-TDSON-8-33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 50 V | на замовлення 3127 шт: термін постачання 21-31 дні (днів) |
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IAUC60N10S5L110ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Pulsed drain current: 240A Power dissipation: 88W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 15.3mΩ Mounting: SMD Gate charge: 24.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC60N10S5L110ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-TDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: PG-TDSON-8-33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 50 V | товар відсутній | |||||||||||||||||||
IAUC64N08S5L075ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 13A Pulsed drain current: 256A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 11.1mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC64N08S5L075ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 13A Pulsed drain current: 256A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 11.1mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC64N08S5L075ATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | товар відсутній | |||||||||||||||||||
IAUC70N08S5N074ATMA1 | INFINEON | Description: INFINEON - IAUC70N08S5N074ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 70 A, 0.0066 ohm, PG-TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 70A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 83W Bauform - Transistor: PG-TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS-5 productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0066ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 2310 шт: термін постачання 21-31 дні (днів) |
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IAUC70N08S5N074ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8 Drain-source voltage: 80V Drain current: 47A Case: PG-TDSON-8 Polarisation: unipolar On-state resistance: 7.4mΩ Pulsed drain current: 280A Power dissipation: 83W Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Kind of package: reel; tape Mounting: SMD Type of transistor: N-MOSFET | товар відсутній | |||||||||||||||||||
IAUC70N08S5N074ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 70A 8TDSON-33 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 35A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 36µA Supplier Device Package: PG-TDSON-8-33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 40 V Qualification: AEC-Q101 | на замовлення 6885 шт: термін постачання 21-31 дні (днів) |
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IAUC70N08S5N074ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 5277 шт: термін постачання 21-30 дні (днів) |
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IAUC70N08S5N074ATMA1 | INFINEON | Description: INFINEON - IAUC70N08S5N074ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 70 A, 0.0066 ohm, PG-TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 70A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 83W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 83W Bauform - Transistor: PG-TDSON Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS-5 productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0066ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0066ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 2310 шт: термін постачання 21-31 дні (днів) |
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IAUC70N08S5N074ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8 Drain-source voltage: 80V Drain current: 47A Case: PG-TDSON-8 Polarisation: unipolar On-state resistance: 7.4mΩ Pulsed drain current: 280A Power dissipation: 83W Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Kind of package: reel; tape Mounting: SMD Type of transistor: N-MOSFET кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC70N08S5N074ATMA1 | Infineon Technologies | N Channel Power MOSFET | товар відсутній | |||||||||||||||||||
IAUC70N08S5N074ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 70A 8TDSON-33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 35A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 36µA Supplier Device Package: PG-TDSON-8-33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 40 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUC80N04S6L032ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 66A; Idm: 320A; 50W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 66A Pulsed drain current: 320A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC80N04S6L032ATMA1 | Infineon Technologies | Description: IAUC80N04S6L032ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.29mOhm @ 40A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 18µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUC80N04S6L032ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 4236 шт: термін постачання 21-30 дні (днів) |
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IAUC80N04S6L032ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 66A; Idm: 320A; 50W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 66A Pulsed drain current: 320A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUC80N04S6L032ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 80A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC80N04S6L032ATMA1 | Infineon Technologies | Description: IAUC80N04S6L032ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.29mOhm @ 40A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 18µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 5728 шт: термін постачання 21-31 дні (днів) |
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IAUC80N04S6N036 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | товар відсутній | |||||||||||||||||||
IAUC80N04S6N036ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 80A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC80N04S6N036ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 8-Pin TDSON EP T/R | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUC80N04S6N036ATMA1 | INFINEON | Description: INFINEON - IAUC80N04S6N036ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 80 A, 0.00282 ohm, PG-TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 80A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 50W Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 50W Bauform - Transistor: PG-TDSON Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 6 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.00282ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00282ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 2354 шт: термін постачання 21-31 дні (днів) |
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IAUC80N04S6N036ATMA1 | Infineon Technologies | Description: IAUC80N04S6N036ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.68mOhm @ 40A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 18µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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IAUC80N04S6N036ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC80N04S6N036ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 1059 шт: термін постачання 21-30 дні (днів) |
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IAUC80N04S6N036ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC80N04S6N036ATMA1 | INFINEON | Description: INFINEON - IAUC80N04S6N036ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 80 A, 0.00282 ohm, PG-TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 80A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 50W Bauform - Transistor: PG-TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 6 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00282ohm SVHC: No SVHC (17-Jan-2023) | на замовлення 4850 шт: термін постачання 21-31 дні (днів) |
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IAUC80N04S6N036ATMA1 | Infineon Technologies | Description: IAUC80N04S6N036ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.68mOhm @ 40A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 18µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 21110 шт: термін постачання 21-31 дні (днів) |
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IAUC90N10S5N062ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 90A TDSON-8-34 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 45A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 59µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3275 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 7941 шт: термін постачання 21-31 дні (днів) |
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IAUC90N10S5N062ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 90A TDSON-8-34 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 45A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 59µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3275 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUC90N10S5N062ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 90A Automotive 8-Pin TDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUC90N10S5N062ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 66A; Idm: 360A; 115W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 66A Pulsed drain current: 360A Power dissipation: 115W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUC90N10S5N062ATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | на замовлення 3938 шт: термін постачання 21-30 дні (днів) |
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IAUC90N10S5N062ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 66A; Idm: 360A; 115W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 66A Pulsed drain current: 360A Power dissipation: 115W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUCN04S6N007T | Infineon Technologies | IAUCN04S6N007T | товар відсутній | |||||||||||||||||||
IAUCN04S6N007TATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S6N007TATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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IAUCN04S6N007TATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S6N007TATMA1 | Infineon Technologies | MOSFET_(20V,40V) | товар відсутній | |||||||||||||||||||
IAUCN04S6N009TATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | на замовлення 1697 шт: термін постачання 21-30 дні (днів) |
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IAUCN04S6N009TATMA1 | Infineon Technologies | SP005562109 | товар відсутній | |||||||||||||||||||
IAUCN04S6N009TATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S6N009TATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S6N013T | Infineon Technologies | IAUCN04S6N013T | товар відсутній | |||||||||||||||||||
IAUCN04S6N013TATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V Power Dissipation (Max): 133W (Tc) Vgs(th) (Max) @ Id: 3V @ 60µA Supplier Device Package: PG-LHDSO-10-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUCN04S6N013TATMA1 | Infineon Technologies | MOSFET_(20V,40V) | товар відсутній | |||||||||||||||||||
IAUCN04S6N013TATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V Power Dissipation (Max): 133W (Tc) Vgs(th) (Max) @ Id: 3V @ 60µA Supplier Device Package: PG-LHDSO-10-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUCN04S6N013TATMA1 | Infineon Technologies | MOSFETs N | на замовлення 1710 шт: термін постачання 21-30 дні (днів) |
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IAUCN04S6N017TATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 200A 10-Pin LHDSO EP T/R Automotive AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUCN04S6N017TATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 120A (Tj) Rds On (Max) @ Id, Vgs: 1.73mOhm @ 60A, 10V Power Dissipation (Max): 103W (Tc) Vgs(th) (Max) @ Id: 3V @ 40µA Supplier Device Package: PG-LHDSO-10-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUCN04S6N017TATMA1 | Infineon Technologies | MOSFETs N | на замовлення 1935 шт: термін постачання 21-30 дні (днів) |
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IAUCN04S6N017TATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 120A (Tj) Rds On (Max) @ Id, Vgs: 1.73mOhm @ 60A, 10V Power Dissipation (Max): 103W (Tc) Vgs(th) (Max) @ Id: 3V @ 40µA Supplier Device Package: PG-LHDSO-10-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V Qualification: AEC-Q101 | на замовлення 1990 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S6N018TATMA1 | Infineon Technologies | IAUCN04S6N018T | товар відсутній | |||||||||||||||||||
IAUCN04S6N018TATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | товар відсутній | |||||||||||||||||||
IAUCN04S7L004ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 3846 шт: термін постачання 21-30 дні (днів) |
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IAUCN04S7L005ATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 430A (Tj) Rds On (Max) @ Id, Vgs: 0.52mOhm @ 88A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 95µA Supplier Device Package: PG-TDSON-8-43 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 20 V Qualification: AEC-Q101 | на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S7L005ATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | на замовлення 776 шт: термін постачання 21-30 дні (днів) |
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IAUCN04S7L005ATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 430A (Tj) Rds On (Max) @ Id, Vgs: 0.52mOhm @ 88A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 95µA Supplier Device Package: PG-TDSON-8-43 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 20 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUCN04S7L006ATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: PG-TDSON-8-43 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Qualification: AEC-Q101 | на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S7L006ATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: PG-TDSON-8-43 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUCN04S7L006ATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | на замовлення 943 шт: термін постачання 21-30 дні (днів) |
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IAUCN04S7L009ATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 275A (Tj) Rds On (Max) @ Id, Vgs: 0.91mOhm @ 88A, 10V Power Dissipation (Max): 129W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 60µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5704 pF @ 20 V Qualification: AEC-Q101 | на замовлення 980 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S7L009ATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 275A (Tj) Rds On (Max) @ Id, Vgs: 0.91mOhm @ 88A, 10V Power Dissipation (Max): 129W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 60µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5704 pF @ 20 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUCN04S7L011ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 994 шт: термін постачання 21-30 дні (днів) |
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IAUCN04S7L011ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 222A T/R | товар відсутній | |||||||||||||||||||
IAUCN04S7L014ATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | на замовлення 897 шт: термін постачання 21-30 дні (днів) |
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IAUCN04S7L019ATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | на замовлення 962 шт: термін постачання 21-30 дні (днів) |
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IAUCN04S7L028ATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | на замовлення 5412 шт: термін постачання 21-30 дні (днів) |
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IAUCN04S7L053DATMA1 | Infineon Technologies | MOSFET | товар відсутній | |||||||||||||||||||
IAUCN04S7L053DATMA1 | Infineon Technologies | IAUCN04S7L053DATMA1 | товар відсутній | |||||||||||||||||||
IAUCN04S7N004ATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | на замовлення 5000 шт: термін постачання 147-156 дні (днів) |
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IAUCN04S7N004ATMA1 | INFINEON | Description: INFINEON - IAUCN04S7N004ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 175 A, 400 µohm, TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 175A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 219W Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 7 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 400µohm SVHC: No SVHC (23-Jan-2024) | товар відсутній | |||||||||||||||||||
IAUCN04S7N004ATMA1 | Infineon Technologies | Automotive MOSFET | товар відсутній | |||||||||||||||||||
IAUCN04S7N004ATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175A Rds On (Max) @ Id, Vgs: 0.44mOhm @ 88A, 10V Power Dissipation (Max): 219W (Tc) Vgs(th) (Max) @ Id: 3V @ 130µA Supplier Device Package: PG-TDSON-8-53 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11310 pF @ 20 V Qualification: AEC-Q101 | на замовлення 6267 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S7N004ATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175A Rds On (Max) @ Id, Vgs: 0.44mOhm @ 88A, 10V Power Dissipation (Max): 219W (Tc) Vgs(th) (Max) @ Id: 3V @ 130µA Supplier Device Package: PG-TDSON-8-53 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11310 pF @ 20 V Qualification: AEC-Q101 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S7N004ATMA1 | INFINEON | Description: INFINEON - IAUCN04S7N004ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 175 A, 400 µohm, TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 175A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 219W Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 7 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 400µohm SVHC: No SVHC (23-Jan-2024) | товар відсутній | |||||||||||||||||||
IAUCN04S7N005ATMA1 | INFINEON | Description: INFINEON - IAUCN04S7N005ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 175 A, 500 µohm, TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 175A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 179W Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 7 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 500µohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1336 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S7N005ATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175A (Tj) Rds On (Max) @ Id, Vgs: 0.55mOhm @ 88A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 3V @ 95µA Supplier Device Package: PG-TDSON-8-43 Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S7N005ATMA1 | INFINEON | Description: INFINEON - IAUCN04S7N005ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 175 A, 500 µohm, TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 175A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 179W Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 7 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 500µohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1336 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S7N005ATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175A (Tj) Rds On (Max) @ Id, Vgs: 0.55mOhm @ 88A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 3V @ 95µA Supplier Device Package: PG-TDSON-8-43 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V Qualification: AEC-Q101 | на замовлення 6648 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S7N005ATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | на замовлення 13838 шт: термін постачання 21-30 дні (днів) |
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IAUCN04S7N006ATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175A Supplier Device Package: PG-TDSON-8-43 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUCN04S7N006ATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | на замовлення 4990 шт: термін постачання 21-30 дні (днів) |
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IAUCN04S7N006ATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175A Supplier Device Package: PG-TDSON-8-43 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Qualification: AEC-Q101 | на замовлення 835 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S7N009ATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175A Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 40 V Qualification: AEC-Q101 | на замовлення 984 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S7N009ATMA1 | Infineon Technologies | IAUCN04S7N009ATMA1 | товар відсутній | |||||||||||||||||||
IAUCN04S7N009ATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175A Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 40 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUCN04S7N009ATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | на замовлення 752 шт: термін постачання 21-30 дні (днів) |
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IAUCN04S7N012ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 2325 шт: термін постачання 21-30 дні (днів) |
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IAUCN04S7N012ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 214A T/R | товар відсутній | |||||||||||||||||||
IAUCN04S7N015ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 5200 шт: термін постачання 21-30 дні (днів) |
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IAUCN04S7N020ATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: PG-TDSON-8-33 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Qualification: AEC-Q101 | на замовлення 990 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S7N020ATMA1 | Infineon Technologies | IAUCN04S7N020ATMA1 | товар відсутній | |||||||||||||||||||
IAUCN04S7N020ATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: PG-TDSON-8-33 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUCN04S7N020ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 985 шт: термін постачання 21-30 дні (днів) |
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IAUCN04S7N020ATMA1 | Infineon Technologies | Automotive MOSFET | товар відсутній | |||||||||||||||||||
IAUCN04S7N020DATMA1 | Infineon Technologies | Mosfet, package: PG-TDSON-8 | товар відсутній | |||||||||||||||||||
IAUCN04S7N030ATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | на замовлення 973 шт: термін постачання 21-30 дні (днів) |
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IAUCN04S7N040DATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | товар відсутній | |||||||||||||||||||
IAUCN04S7N056DATMA1 | Infineon Technologies | MOSFETs N | на замовлення 650 шт: термін постачання 21-30 дні (днів) |
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IAUCN08S7N013ATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | на замовлення 4053 шт: термін постачання 21-30 дні (днів) |
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IAUCN08S7N013ATMA1 | Infineon Technologies | MosFet - PG-TDSON-8 | товар відсутній | |||||||||||||||||||
IAUCN10S5L094DATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | на замовлення 5000 шт: термін постачання 386-395 дні (днів) |
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IAUCN10S7N021ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 3570 шт: термін постачання 21-30 дні (днів) |
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IAUCN10S7N021ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175A (Tj) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 88A, 10V Power Dissipation (Max): 217W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 130µA Supplier Device Package: PG-TDSON-8-53 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7153 pF @ 50 V Qualification: AEC-Q101 | на замовлення 3315 шт: термін постачання 21-31 дні (днів) |
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IAUCN10S7N021ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175A (Tj) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 88A, 10V Power Dissipation (Max): 217W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 130µA Supplier Device Package: PG-TDSON-8-53 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7153 pF @ 50 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUMN04S7N009GATMA1 | Infineon Technologies | Power Mosfet Automotive | товар відсутній | |||||||||||||||||||
IAUMN04S7N009GATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | товар відсутній | |||||||||||||||||||
IAUMN08S5N012GATMA1 | Infineon Technologies | SP005730155 | товар відсутній | |||||||||||||||||||
IAUS165N08S5N029 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | товар відсутній | |||||||||||||||||||
IAUS165N08S5N029ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 886 шт: термін постачання 21-30 дні (днів) |
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IAUS165N08S5N029ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 165A HSOG-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 165A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 108µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUS165N08S5N029ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W Case: PG-HSOG-8 Mounting: SMD Kind of package: reel; tape Technology: OptiMOS™ 5 Pulsed drain current: 660A Drain-source voltage: 80V Drain current: 165A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±20V | товар відсутній | |||||||||||||||||||
IAUS165N08S5N029ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 165A Automotive 9-Pin(8+Tab) HSOG T/R | товар відсутній | |||||||||||||||||||
IAUS165N08S5N029ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W Case: PG-HSOG-8 Mounting: SMD Kind of package: reel; tape Technology: OptiMOS™ 5 Pulsed drain current: 660A Drain-source voltage: 80V Drain current: 165A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||||||
IAUS165N08S5N029ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 165A HSOG-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 165A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 108µA Supplier Device Package: PG-HSOG-8-1 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V Qualification: AEC-Q101 | на замовлення 1370 шт: термін постачання 21-31 дні (днів) |
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IAUS180N04S4N015ATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | товар відсутній | |||||||||||||||||||
IAUS180N04S4N015ATMA1 | Infineon Technologies | N-channel - Enhancement mode MOSFET | товар відсутній | |||||||||||||||||||
IAUS200N08S5N023 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | товар відсутній | |||||||||||||||||||
IAUS200N08S5N023ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 200A 9-Pin(8+Tab) HSOG T/R Automotive AEC-Q101 | на замовлення 12600 шт: термін постачання 21-31 дні (днів) |
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IAUS200N08S5N023ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 148A; Idm: 800A; 200W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 148A Pulsed drain current: 800A Power dissipation: 200W Case: PG-HSOG-8 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1800 шт | товар відсутній | |||||||||||||||||||
IAUS200N08S5N023ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 200A HSOG-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 130µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUS200N08S5N023ATMA1 | INFINEON | Description: INFINEON - IAUS200N08S5N023ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 200 A, 0.0018 ohm, PG-HSOG, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 200A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 200W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: PG-HSOG Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS-5 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0018ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0018ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1505 шт: термін постачання 21-31 дні (днів) |
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IAUS200N08S5N023ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 200A 9-Pin(8+Tab) HSOG T/R Automotive AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUS200N08S5N023ATMA1 | Infineon Technologies | OptiMOS Power-Transistor | товар відсутній | |||||||||||||||||||
IAUS200N08S5N023ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 200A 9-Pin(8+Tab) HSOG T/R Automotive AEC-Q101 | на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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IAUS200N08S5N023ATMA1 | INFINEON | Description: INFINEON - IAUS200N08S5N023ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 200 A, 0.0018 ohm, PG-HSOG, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 200A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: PG-HSOG Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS-5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0018ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1505 шт: термін постачання 21-31 дні (днів) |
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IAUS200N08S5N023ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 148A; Idm: 800A; 200W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 148A Pulsed drain current: 800A Power dissipation: 200W Case: PG-HSOG-8 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUS200N08S5N023ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 1487 шт: термін постачання 21-30 дні (днів) |
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IAUS200N08S5N023ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 200A HSOG-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 130µA Supplier Device Package: PG-HSOG-8-1 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V Qualification: AEC-Q101 | на замовлення 489 шт: термін постачання 21-31 дні (днів) |
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IAUS200N08S5N023ATMA1 транзистор Код товару: 197348 | Транзистори > Польові N-канальні | товар відсутній | ||||||||||||||||||||
IAUS240N08S5N019ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 240A Automotive AEC-Q101 9-Pin(8+Tab) HSOG T/R | на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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IAUS240N08S5N019ATMA1 | Infineon Technologies | SP001792360 | товар відсутній | |||||||||||||||||||
IAUS240N08S5N019ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 240A HSOG-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 160µA Supplier Device Package: PG-HSOG-8-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V Qualification: AEC-Q101 | на замовлення 2516 шт: термін постачання 21-31 дні (днів) |
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IAUS240N08S5N019ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 240A Automotive AEC-Q101 9-Pin(8+Tab) HSOG T/R | товар відсутній | |||||||||||||||||||
IAUS240N08S5N019ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 240A Automotive AEC-Q101 9-Pin(8+Tab) HSOG T/R | на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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IAUS240N08S5N019ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 173A; Idm: 960A; 230W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 173A Pulsed drain current: 960A Power dissipation: 230W Case: PG-HSOG-8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUS240N08S5N019ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 240A Automotive AEC-Q101 9-Pin(8+Tab) HSOG T/R | на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
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IAUS240N08S5N019ATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | на замовлення 373 шт: термін постачання 21-30 дні (днів) |
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IAUS240N08S5N019ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 240A HSOG-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 160µA Supplier Device Package: PG-HSOG-8-1 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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IAUS240N08S5N019ATMA1 | INFINEON | Description: INFINEON - IAUS240N08S5N019ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 240 A, 0.0015 ohm, PG-HSOG, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 240A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 230W Bauform - Transistor: PG-HSOG Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS-5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0015ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1443 шт: термін постачання 21-31 дні (днів) |
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IAUS240N08S5N019ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 240A Automotive AEC-Q101 9-Pin(8+Tab) HSOG T/R | товар відсутній | |||||||||||||||||||
IAUS240N08S5N019ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 173A; Idm: 960A; 230W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 173A Pulsed drain current: 960A Power dissipation: 230W Case: PG-HSOG-8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1800 шт | товар відсутній | |||||||||||||||||||
IAUS240N08S5N019ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 240A Automotive AEC-Q101 9-Pin(8+Tab) HSOG T/R | на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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IAUS240N08S5N019ATMA1 | INFINEON | Description: INFINEON - IAUS240N08S5N019ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 240 A, 0.0015 ohm, PG-HSOG, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 240A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 230W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 230W Bauform - Transistor: PG-HSOG Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS-5 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0015ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0015ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1443 шт: термін постачання 21-31 дні (днів) |
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IAUS260N10S5N019TATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 91A Pulsed drain current: 995A Power dissipation: 300W Case: PG-HDSOP-16 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 166nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUS260N10S5N019TATMA1 | Infineon Technologies | MOSFETs N | на замовлення 9949 шт: термін постачання 21-30 дні (днів) |
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IAUS260N10S5N019TATMA1 | INFINEON | Description: INFINEON - IAUS260N10S5N019TATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 260 A, 0.0016 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 260A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: HDSOP Anzahl der Pins: 16Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0016ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1931 шт: термін постачання 21-31 дні (днів) |
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IAUS260N10S5N019TATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 260A HDSOP-16-2 Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Tj) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 210µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V | на замовлення 3722 шт: термін постачання 21-31 дні (днів) |
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IAUS260N10S5N019TATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 91A Pulsed drain current: 995A Power dissipation: 300W Case: PG-HDSOP-16 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 166nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1800 шт | товар відсутній | |||||||||||||||||||
IAUS260N10S5N019TATMA1 | Infineon Technologies | MOSFET | товар відсутній | |||||||||||||||||||
IAUS260N10S5N019TATMA1 | Infineon Technologies | SP002952334 | товар відсутній | |||||||||||||||||||
IAUS260N10S5N019TATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 260A HDSOP-16-2 Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Tj) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 210µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V | на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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IAUS260N10S5N019TATMA1 | INFINEON | Description: INFINEON - IAUS260N10S5N019TATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 260 A, 0.0016 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 260A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 300W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: HDSOP Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 16Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0016ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0016ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1931 шт: термін постачання 21-31 дні (днів) |
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IAUS260N10S5N019TATMA1 | Infineon Technologies | MOSFET | товар відсутній | |||||||||||||||||||
IAUS300N04S4N007ATMA1 | Infineon Technologies | N-channel - Enhancement mode MOSFET Automotive AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUS300N04S4N007ATMA1 | Infineon Technologies | N-channel - Enhancement mode MOSFET | товар відсутній | |||||||||||||||||||
IAUS300N04S4N007ATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | товар відсутній | |||||||||||||||||||
IAUS300N04S4N007ATMA1 | Infineon Technologies | Description: MOSFET_(20V 40V) PG-HSOG-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 0.74mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 275µA Supplier Device Package: PG-HSOG-8-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 342 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27356 pF @ 25 V | товар відсутній | |||||||||||||||||||
IAUS300N08S5N011ATMA1 | Infineon Technologies | Automotive AEC-Q101 Power Mosfet | товар відсутній | |||||||||||||||||||
IAUS300N08S5N011ATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | товар відсутній | |||||||||||||||||||
IAUS300N08S5N011ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-HSOG-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 410A (Tj) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HSOG-8-1 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V | товар відсутній | |||||||||||||||||||
IAUS300N08S5N011ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 52A Pulsed drain current: 1505A Power dissipation: 375W Case: PG-HSOG-8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 231nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUS300N08S5N011ATMA1 | Infineon Technologies | Automotive AEC-Q101 Power Mosfet | на замовлення 12600 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N011ATMA1 | Infineon Technologies | Automotive AEC-Q101 Power Mosfet | товар відсутній | |||||||||||||||||||
IAUS300N08S5N011ATMA1 | Infineon Technologies | SP005427388 | товар відсутній | |||||||||||||||||||
IAUS300N08S5N011ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 52A Pulsed drain current: 1505A Power dissipation: 375W Case: PG-HSOG-8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 231nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1800 шт | товар відсутній | |||||||||||||||||||
IAUS300N08S5N011TATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 300A HDSOP-16-2 Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tj) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V | товар відсутній | |||||||||||||||||||
IAUS300N08S5N011TATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 1450A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 123A Pulsed drain current: 1450A Power dissipation: 375W Case: PG-HDSOP-16 Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 231nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUS300N08S5N011TATMA1 | INFINEON | Description: INFINEON - IAUS300N08S5N011TATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.001 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: HDSOP Anzahl der Pins: 16Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.001ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 3333 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N011TATMA1 | Infineon Technologies | OptiMOS-5 Power-Transistor Automotive AEC-Q101 | на замовлення 19800 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N011TATMA1 | Infineon Technologies | OptiMOS-5 Power-Transistor | товар відсутній | |||||||||||||||||||
IAUS300N08S5N011TATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 1450A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 123A Pulsed drain current: 1450A Power dissipation: 375W Case: PG-HDSOP-16 Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 231nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1800 шт | товар відсутній | |||||||||||||||||||
IAUS300N08S5N011TATMA1 | Infineon Technologies | OptiMOS-5 Power-Transistor Automotive AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUS300N08S5N011TATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 300A HDSOP-16-2 Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tj) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V | на замовлення 1088 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N011TATMA1 | Infineon Technologies | MOSFETs MOSFET_(75V 120V( | на замовлення 1190 шт: термін постачання 21-30 дні (днів) |
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IAUS300N08S5N011TATMA1 | INFINEON | Description: INFINEON - IAUS300N08S5N011TATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.001 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 375W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: HDSOP Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 16Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.001ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.001ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 3333 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N011TATMA1 | Infineon Technologies | OptiMOS-5 Power-Transistor Automotive AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUS300N08S5N012ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOG T/R | товар відсутній | |||||||||||||||||||
IAUS300N08S5N012ATMA1 | INFINEON | Description: INFINEON - IAUS300N08S5N012ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.001 ohm, HSOG, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 375W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: HSOG Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS-5 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.001ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.001ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1392 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N012ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 300A; Idm: 1.2kA; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 300A Pulsed drain current: 1.2kA Power dissipation: 375W Case: PG-HSOG-8 Gate-source voltage: ±20V On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 73nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1800 шт | товар відсутній | |||||||||||||||||||
IAUS300N08S5N012ATMA1 | Infineon Technologies | IAUS300N08S5N012ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOG T/R - Arrow.com | на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N012ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 300A HSOG-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N012ATMA1 | Infineon Technologies | IAUS300N08S5N012ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOG T/R - Arrow.com | на замовлення 216 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N012ATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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IAUS300N08S5N012ATMA1 | INFINEON | Description: INFINEON - IAUS300N08S5N012ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.001 ohm, HSOG, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: HSOG Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS-5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.001ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1392 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N012ATMA1 | Infineon Technologies | IAUS300N08S5N012ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOG T/R - Arrow.com | на замовлення 216 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N012ATMA1 | Infineon Technologies | IAUS300N08S5N012ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOG T/R - Arrow.com | на замовлення 5400 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N012ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 300A; Idm: 1.2kA; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 300A Pulsed drain current: 1.2kA Power dissipation: 375W Case: PG-HSOG-8 Gate-source voltage: ±20V On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 73nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUS300N08S5N012ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 300A HSOG-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HSOG-8-1 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V Qualification: AEC-Q101 | на замовлення 3319 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N012ATMA1 | Infineon Technologies | IAUS300N08S5N012ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOG T/R - Arrow.com | товар відсутній | |||||||||||||||||||
IAUS300N08S5N012TATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 300A HDSOP-16-2 Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tj) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V | товар відсутній | |||||||||||||||||||
IAUS300N08S5N012TATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | на замовлення 6253 шт: термін постачання 21-30 дні (днів) |
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IAUS300N08S5N012TATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 400A Automotive AEC-Q101 16-Pin HDSOP EP T/R | товар відсутній | |||||||||||||||||||
IAUS300N08S5N012TATMA1 | INFINEON | Description: INFINEON - IAUS300N08S5N012TATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.001 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 375W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: HDSOP Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 16Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.001ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.001ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 3365 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N012TATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 300A HDSOP-16-2 Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tj) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V | на замовлення 1797 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N012TATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 400A Automotive 16-Pin HDSOP EP T/R | товар відсутній | |||||||||||||||||||
IAUS300N08S5N012TATMA1 | INFINEON | Description: INFINEON - IAUS300N08S5N012TATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.001 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: HDSOP Anzahl der Pins: 16Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.001ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 3365 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N012TATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 400A Automotive AEC-Q101 16-Pin HDSOP EP T/R | товар відсутній | |||||||||||||||||||
IAUS300N08S5N014ATMA1 | Infineon Technologies | Automotive AEC-Q101 Power Mosfet | товар відсутній | |||||||||||||||||||
IAUS300N08S5N014ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 300A HSOG-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 230µA Supplier Device Package: PG-HSOG-8-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V Qualification: AEC-Q101 | на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N014ATMA1 | Infineon Technologies | SP001792358 | товар відсутній | |||||||||||||||||||
IAUS300N08S5N014ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 230A; Idm: 1.2kA; 300W Mounting: SMD Gate-source voltage: ±20V Kind of package: reel; tape Case: PG-HSOG-8 On-state resistance: 1.4mΩ Pulsed drain current: 1.2kA Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 5 Drain current: 230A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET | товар відсутній | |||||||||||||||||||
IAUS300N08S5N014ATMA1 | INFINEON | Description: INFINEON - IAUS300N08S5N014ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.0011 ohm, HSOG, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 300W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: HSOG Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0011ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0011ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 3499 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N014ATMA1 | Infineon Technologies | Automotive AEC-Q101 Power Mosfet | на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N014ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 300A HSOG-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 230µA Supplier Device Package: PG-HSOG-8-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V Qualification: AEC-Q101 | на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N014ATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | товар відсутній | |||||||||||||||||||
IAUS300N08S5N014ATMA1 | Infineon Technologies | Automotive AEC-Q101 Power Mosfet | товар відсутній | |||||||||||||||||||
IAUS300N08S5N014ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 230A; Idm: 1.2kA; 300W Mounting: SMD Gate-source voltage: ±20V Kind of package: reel; tape Case: PG-HSOG-8 On-state resistance: 1.4mΩ Pulsed drain current: 1.2kA Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 5 Drain current: 230A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET кількість в упаковці: 1800 шт | товар відсутній | |||||||||||||||||||
IAUS300N08S5N014ATMA1 | INFINEON | Description: INFINEON - IAUS300N08S5N014ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.0011 ohm, HSOG, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: HSOG Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0011ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 3499 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N014TATMA1 | INFINEON | Description: INFINEON - IAUS300N08S5N014TATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.0012 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: HDSOP Anzahl der Pins: 16Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0012ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1105 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N014TATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | на замовлення 598 шт: термін постачання 21-30 дні (днів) |
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IAUS300N08S5N014TATMA1 | Infineon Technologies | Automotive AEC-Q101 Power Mosfet | на замовлення 19800 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N014TATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 1186A; 300W Mounting: SMD Gate-source voltage: ±20V Kind of package: reel; tape Case: PG-HDSOP-16 On-state resistance: 2.1mΩ Pulsed drain current: 1186A Power dissipation: 300W Gate charge: 187nC Polarisation: unipolar Technology: OptiMOS™ 5 Drain current: 108A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET кількість в упаковці: 1800 шт | товар відсутній | |||||||||||||||||||
IAUS300N08S5N014TATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 300A HDSOP-16-2 Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tj) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 230µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V | на замовлення 5286 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N014TATMA1 | Infineon Technologies | Automotive AEC-Q101 Power Mosfet | товар відсутній | |||||||||||||||||||
IAUS300N08S5N014TATMA1 | INFINEON | Description: INFINEON - IAUS300N08S5N014TATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.0012 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 300W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: HDSOP Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 16Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0012ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0012ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1105 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N014TATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 300A HDSOP-16-2 Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tj) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 230µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V | на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N014TATMA1 | Infineon Technologies | SP002952338 | товар відсутній | |||||||||||||||||||
IAUS300N08S5N014TATMA1 | Infineon Technologies | Automotive AEC-Q101 Power Mosfet | товар відсутній | |||||||||||||||||||
IAUS300N08S5N014TATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 1186A; 300W Mounting: SMD Gate-source voltage: ±20V Kind of package: reel; tape Case: PG-HDSOP-16 On-state resistance: 2.1mΩ Pulsed drain current: 1186A Power dissipation: 300W Gate charge: 187nC Polarisation: unipolar Technology: OptiMOS™ 5 Drain current: 108A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET | товар відсутній | |||||||||||||||||||
IAUS300N10S5N014ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 360A 9-Pin(8+Tab) HSOG T/R Automotive AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUS300N10S5N014ATMA1 | Infineon Technologies | SP005423088 | товар відсутній | |||||||||||||||||||
IAUS300N10S5N014ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 1315A Power dissipation: 375W Case: PG-HSOG-8 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 216nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUS300N10S5N014ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-HSOG-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360A (Tj) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V | товар відсутній | |||||||||||||||||||
IAUS300N10S5N014ATMA1 | Infineon Technologies | MOSFETs N | товар відсутній | |||||||||||||||||||
IAUS300N10S5N014ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 1315A Power dissipation: 375W Case: PG-HSOG-8 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 216nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1800 шт | товар відсутній | |||||||||||||||||||
IAUS300N10S5N014ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-HSOG-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360A (Tj) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V | товар відсутній | |||||||||||||||||||
IAUS300N10S5N015TATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 350A Automotive 16-Pin HDSOP EP T/R | товар відсутній | |||||||||||||||||||
IAUS300N10S5N015TATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 300A HDSOP-16-2 Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tj) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V | на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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IAUS300N10S5N015TATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 350A Automotive AEC-Q101 16-Pin HDSOP EP T/R | товар відсутній | |||||||||||||||||||
IAUS300N10S5N015TATMA1 | INFINEON | Description: INFINEON - IAUS300N10S5N015TATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 300 A, 0.0013 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: HDSOP Anzahl der Pins: 16Pin(s) Produktpalette: OptiMOS 5 productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0013ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 3753 шт: термін постачання 21-31 дні (днів) |
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IAUS300N10S5N015TATMA1 | Infineon Technologies | MOSFETs N | на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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IAUS300N10S5N015TATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 350A Automotive AEC-Q101 16-Pin HDSOP EP T/R | на замовлення 10800 шт: термін постачання 21-31 дні (днів) |
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IAUS300N10S5N015TATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 300A HDSOP-16-2 Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tj) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V | на замовлення 2211 шт: термін постачання 21-31 дні (днів) |
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IAUS300N10S5N015TATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 350A Automotive AEC-Q101 16-Pin HDSOP EP T/R | товар відсутній | |||||||||||||||||||
IAUS300N10S5N015TATMA1 | INFINEON | Description: INFINEON - IAUS300N10S5N015TATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 300 A, 0.0013 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 375W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: HDSOP Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 16Pin(s) Produktpalette: OptiMOS 5 productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0013ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0013ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 3753 шт: термін постачання 21-31 дні (днів) |
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IAUT150N10S5N035 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | товар відсутній | |||||||||||||||||||
IAUT150N10S5N035ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 150A Power dissipation: 166W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUT150N10S5N035ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 150A 8HSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V Power Dissipation (Max): 166W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 110µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6110 pF @ 50 V | на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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IAUT150N10S5N035ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 150A Automotive AEC-Q101 9-Pin(8+Tab) HSOF T/R | товар відсутній | |||||||||||||||||||
IAUT150N10S5N035ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 150A Power dissipation: 166W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт | товар відсутній | |||||||||||||||||||
IAUT150N10S5N035ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 150A Automotive 9-Pin(8+Tab) HSOF T/R | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUT150N10S5N035ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 9960 шт: термін постачання 21-30 дні (днів) |
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IAUT150N10S5N035ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 150A 8HSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V Power Dissipation (Max): 166W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 110µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6110 pF @ 50 V | на замовлення 6508 шт: термін постачання 21-31 дні (днів) |
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IAUT165N08S5N029ATMA1 | Infineon Technologies | IAUT165N08S5N029ATMA1 | товар відсутній | |||||||||||||||||||
IAUT165N08S5N029ATMA1 | Infineon Technologies | Infineon | товар відсутній | |||||||||||||||||||
IAUT165N08S5N029ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 165A 8HSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 165A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 108µA Supplier Device Package: PG-HSOF-8-1 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V | товар відсутній | |||||||||||||||||||
IAUT165N08S5N029ATMA2 | INFINEON | Description: INFINEON - IAUT165N08S5N029ATMA2 - Leistungs-MOSFET, n-Kanal, 80 V, 165 A, 0.0024 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 165A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 167W Bauform - Transistor: HSOF Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0024ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1651 шт: термін постачання 21-31 дні (днів) |
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IAUT165N08S5N029ATMA2 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8 Case: PG-HSOF-8 Mounting: SMD Kind of package: reel; tape Technology: OptiMOS™ 5 Drain-source voltage: 80V Drain current: 165A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 2000 шт | товар відсутній | |||||||||||||||||||
IAUT165N08S5N029ATMA2 | Infineon Technologies | Description: MOSFET N-CH 80V 165A 8HSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 165A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 108µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUT165N08S5N029ATMA2 | INFINEON | Description: INFINEON - IAUT165N08S5N029ATMA2 - Leistungs-MOSFET, n-Kanal, 80 V, 165 A, 0.0024 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 165A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 167W Bauform - Transistor: HSOF Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0024ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1651 шт: термін постачання 21-31 дні (днів) |
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IAUT165N08S5N029ATMA2 | Infineon Technologies | Description: MOSFET N-CH 80V 165A 8HSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 165A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 108µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUT165N08S5N029ATMA2 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8 Case: PG-HSOF-8 Mounting: SMD Kind of package: reel; tape Technology: OptiMOS™ 5 Drain-source voltage: 80V Drain current: 165A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±20V | товар відсутній | |||||||||||||||||||
IAUT165N08S5N029ATMA2 | Infineon Technologies | Trans MOSFET N-CH 80V 165A Automotive 9-Pin(8+Tab) HSOF T/R | товар відсутній | |||||||||||||||||||
IAUT165N08S5N029ATMA2 | Infineon Technologies | MOSFETs MOSFET_(75V,120V( | на замовлення 966 шт: термін постачання 21-30 дні (днів) |
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IAUT200N08S5N023ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 200A 8HSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 130µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V | на замовлення 6435 шт: термін постачання 21-31 дні (днів) |
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IAUT200N08S5N023ATMA1 | INFINEON | Description: INFINEON - IAUT200N08S5N023ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 200 A, 0.0018 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 200A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: HSOF Anzahl der Pins: 8Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0018ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 784 шт: термін постачання 21-31 дні (днів) |
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IAUT200N08S5N023ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8 Gate charge: 36nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Kind of package: reel; tape Polarisation: unipolar Power dissipation: 200W Type of transistor: N-MOSFET On-state resistance: 2.3mΩ Drain current: 200A Drain-source voltage: 80V Case: PG-HSOF-8 Mounting: SMD | товар відсутній | |||||||||||||||||||
IAUT200N08S5N023ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 200A Automotive 9-Pin(8+Tab) HSOF T/R | товар відсутній | |||||||||||||||||||
IAUT200N08S5N023ATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | на замовлення 4106 шт: термін постачання 21-30 дні (днів) |
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IAUT200N08S5N023ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 200A 8HSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 130µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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IAUT200N08S5N023ATMA1 | INFINEON | Description: INFINEON - IAUT200N08S5N023ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 200 A, 0.0018 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 200A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: HSOF Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0018ohm | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUT200N08S5N023ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8 Gate charge: 36nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Kind of package: reel; tape Polarisation: unipolar Power dissipation: 200W Type of transistor: N-MOSFET On-state resistance: 2.3mΩ Drain current: 200A Drain-source voltage: 80V Case: PG-HSOF-8 Mounting: SMD кількість в упаковці: 2000 шт | товар відсутній | |||||||||||||||||||
IAUT200N08S5N023ATMA1 | INFINEON | Description: INFINEON - IAUT200N08S5N023ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 200 A, 0.0018 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 200A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: HSOF Anzahl der Pins: 8Pin(s) Produktpalette: PW Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0018ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 784 шт: термін постачання 21-31 дні (днів) |
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IAUT240N08S5N019ATMA1 | INFINEON | Description: INFINEON - IAUT240N08S5N019ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 240 A, 0.0019 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 230W Produktpalette: OptiMOS 5 Series productTraceability: No Kanaltyp: n-Kanal Drain-Source-Durchgangswiderstand: 0.0019ohm SVHC: No SVHC (17-Jan-2023) | на замовлення 1678 шт: термін постачання 21-31 дні (днів) |
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IAUT240N08S5N019ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 230W; PG-HSOF-8 Case: PG-HSOF-8 Mounting: SMD On-state resistance: 1.9mΩ Drain current: 240A Gate charge: 42nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 80V Power dissipation: 230W Polarisation: unipolar Kind of package: reel; tape Type of transistor: N-MOSFET кількість в упаковці: 2000 шт | товар відсутній | |||||||||||||||||||
IAUT240N08S5N019ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 240A 8HSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 160µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V | на замовлення 1013 шт: термін постачання 21-31 дні (днів) |
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IAUT240N08S5N019ATMA1 | INFINEON | Description: INFINEON - IAUT240N08S5N019ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 240 A, 0.0019 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 240A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 230W Bauform - Transistor: HSOF Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0019ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1045 шт: термін постачання 21-31 дні (днів) |
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IAUT240N08S5N019ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 240A 8HSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 160µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V | товар відсутній | |||||||||||||||||||
IAUT240N08S5N019ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 230W; PG-HSOF-8 Case: PG-HSOF-8 Mounting: SMD On-state resistance: 1.9mΩ Drain current: 240A Gate charge: 42nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 80V Power dissipation: 230W Polarisation: unipolar Kind of package: reel; tape Type of transistor: N-MOSFET | товар відсутній | |||||||||||||||||||
IAUT240N08S5N019ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 240A Automotive 9-Pin(8+Tab) HSOF T/R | товар відсутній | |||||||||||||||||||
IAUT240N08S5N019ATMA1 | Infineon Technologies | MOSFETs MOSFET_(75V,120V( | на замовлення 1920 шт: термін постачання 21-30 дні (днів) |
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IAUT260N10S5N019 | Infineon Technologies | Trans MOSFET N-CH 100V 260A Automotive AEC-Q101 9-Pin(8+Tab) HSOF T/R | товар відсутній | |||||||||||||||||||
IAUT260N10S5N019 | Infineon | на замовлення 2000 шт: термін постачання 14-28 дні (днів) | ||||||||||||||||||||
IAUT260N10S5N019ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 260A Automotive 9-Pin(8+Tab) HSOF T/R | товар відсутній | |||||||||||||||||||
IAUT260N10S5N019ATMA1 | INFINEON | Description: INFINEON - IAUT260N10S5N019ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 260 A, 0.0016 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 260A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: HSOF Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0016ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 6119 шт: термін постачання 21-31 дні (днів) |
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IAUT260N10S5N019ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8 Mounting: SMD Kind of package: reel; tape Gate charge: 54nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-HSOF-8 Drain-source voltage: 100V Drain current: 260A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar кількість в упаковці: 2000 шт | товар відсутній | |||||||||||||||||||
IAUT260N10S5N019ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 260A 8HSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 210µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V | на замовлення 4967 шт: термін постачання 21-31 дні (днів) |
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IAUT260N10S5N019ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8 Mounting: SMD Kind of package: reel; tape Gate charge: 54nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-HSOF-8 Drain-source voltage: 100V Drain current: 260A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar | товар відсутній | |||||||||||||||||||
IAUT260N10S5N019ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 2014 шт: термін постачання 21-30 дні (днів) |
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IAUT260N10S5N019ATMA1 | INFINEON | Description: INFINEON - IAUT260N10S5N019ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 260 A, 0.0016 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 260A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: HSOF Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0016ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 6119 шт: термін постачання 21-31 дні (днів) |
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IAUT260N10S5N019ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 260A 8HSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 210µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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IAUT300N08S5N011ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 410A 9-Pin(8+Tab) HSOF T/R Automotive AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUT300N08S5N011ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 52A Pulsed drain current: 1505A Power dissipation: 375W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 231nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт | товар відсутній | |||||||||||||||||||
IAUT300N08S5N011ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-HSOF-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 410A (Tj) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V | на замовлення 1709 шт: термін постачання 21-31 дні (днів) | |||||||||||||||||||
IAUT300N08S5N011ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 52A Pulsed drain current: 1505A Power dissipation: 375W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 231nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUT300N08S5N011ATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | товар відсутній | |||||||||||||||||||
IAUT300N08S5N011ATMA1 | INFINEON | Description: INFINEON - IAUT300N08S5N011ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 410 A, 0.0011 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 410A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: HSOF Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0011ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1259 шт: термін постачання 21-31 дні (днів) |
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IAUT300N08S5N011ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-HSOF-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 410A (Tj) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V | на замовлення 1709 шт: термін постачання 21-31 дні (днів) |
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IAUT300N08S5N011ATMA1 | Infineon Technologies | SP005427386 | товар відсутній | |||||||||||||||||||
IAUT300N08S5N011ATMA1 | INFINEON | Description: INFINEON - IAUT300N08S5N011ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 410 A, 0.0011 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 410A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: HSOF Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0011ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1259 шт: термін постачання 21-31 дні (днів) |
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IAUT300N08S5N012 | Infineon Technologies | Infineon MOSFET_(75V 120V( | товар відсутній | |||||||||||||||||||
IAUT300N08S5N012ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V | товар відсутній | |||||||||||||||||||
IAUT300N08S5N012ATMA1 | Infineon Technologies | SP001434098 | товар відсутній | |||||||||||||||||||
IAUT300N08S5N012ATMA1 | Infineon Technologies | SP001434098 | товар відсутній | |||||||||||||||||||
IAUT300N08S5N012ATMA2 | Infineon Technologies | Trans MOSFET N-CH 80V 300A Automotive AEC-Q101 9-Pin(8+Tab) HSOF T/R | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUT300N08S5N012ATMA2 | Infineon Technologies | MOSFET MOSFET_(75V,120V( | на замовлення 113 шт: термін постачання 21-30 дні (днів) |
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IAUT300N08S5N012ATMA2 | Infineon Technologies | Trans MOSFET N-CH 80V 300A Automotive AEC-Q101 9-Pin(8+Tab) HSOF T/R | на замовлення 1340 шт: термін постачання 21-31 дні (днів) |
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IAUT300N08S5N012ATMA2 | Infineon Technologies | Description: MOSFET N-CH 80V 300A 8HSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HSOF-8-1 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V | на замовлення 2528 шт: термін постачання 21-31 дні (днів) |
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IAUT300N08S5N012ATMA2 | INFINEON | Description: INFINEON - IAUT300N08S5N012ATMA2 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.001 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: HSOF Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.001ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 16006 шт: термін постачання 21-31 дні (днів) |
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IAUT300N08S5N012ATMA2 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 300A Power dissipation: 375W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 178nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||||||
IAUT300N08S5N012ATMA2 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 300A Power dissipation: 375W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 178nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUT300N08S5N012ATMA2 | Infineon Technologies | Trans MOSFET N-CH 80V 300A Automotive AEC-Q101 9-Pin(8+Tab) HSOF T/R | на замовлення 5810 шт: термін постачання 21-31 дні (днів) |
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IAUT300N08S5N012ATMA2 | Infineon Technologies | Description: MOSFET N-CH 80V 300A 8HSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HSOF-8-1 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUT300N08S5N012ATMA2 | Infineon Technologies | Trans MOSFET N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOF T/R | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUT300N08S5N012ATMA2 | Infineon Technologies | Trans MOSFET N-CH 80V 300A Automotive AEC-Q101 9-Pin(8+Tab) HSOF T/R | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUT300N08S5N012ATMA2 | INFINEON | Description: INFINEON - IAUT300N08S5N012ATMA2 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.001 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: HSOF Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.001ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 16006 шт: термін постачання 21-31 дні (днів) |
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IAUT300N08S5N014 | Infineon Technologies | Infineon MOSFET_(75V 120V( | товар відсутній | |||||||||||||||||||
IAUT300N08S5N014ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 300A 8HSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (DC) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 230µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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IAUT300N08S5N014ATMA1 | Infineon Technologies | IAUT300N08S5N014ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOF T/R - Arrow.com | товар відсутній | |||||||||||||||||||
IAUT300N08S5N014ATMA1 | INFINEON | Description: INFINEON - IAUT300N08S5N014ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.0011 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: HSOF Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0011ohm SVHC: No SVHC (27-Jun-2018) | на замовлення 8154 шт: термін постачання 21-31 дні (днів) |
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IAUT300N08S5N014ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 300W; PG-HSOF-8 Mounting: SMD Gate-source voltage: ±20V Kind of package: reel; tape Case: PG-HSOF-8 On-state resistance: 1.4mΩ Power dissipation: 300W Gate charge: 60nC Polarisation: unipolar Technology: OptiMOS™ 5 Drain current: 300A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET кількість в упаковці: 2000 шт | товар відсутній | |||||||||||||||||||
IAUT300N08S5N014ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 300W; PG-HSOF-8 Mounting: SMD Gate-source voltage: ±20V Kind of package: reel; tape Case: PG-HSOF-8 On-state resistance: 1.4mΩ Power dissipation: 300W Gate charge: 60nC Polarisation: unipolar Technology: OptiMOS™ 5 Drain current: 300A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET | товар відсутній | |||||||||||||||||||
IAUT300N08S5N014ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOF T/R | товар відсутній | |||||||||||||||||||
IAUT300N08S5N014ATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | на замовлення 8370 шт: термін постачання 21-30 дні (днів) |
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IAUT300N08S5N014ATMA1 | Infineon Technologies | IAUT300N08S5N014ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOF T/R - Arrow.com | товар відсутній | |||||||||||||||||||
IAUT300N08S5N014ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 300A 8HSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (DC) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 230µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V | на замовлення 4142 шт: термін постачання 21-31 дні (днів) |
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IAUT300N08S5N014ATMA1 | INFINEON | Description: INFINEON - IAUT300N08S5N014ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.0011 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: HSOF Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0011ohm SVHC: No SVHC (27-Jun-2018) | на замовлення 8154 шт: термін постачання 21-31 дні (днів) |
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IAUT300N10S5N014ATMA1 | Infineon Technologies | SP005427384 | товар відсутній | |||||||||||||||||||
IAUT300N10S5N014ATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | товар відсутній | |||||||||||||||||||
IAUT300N10S5N014ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-HSOF-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360A (Tj) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUT300N10S5N014ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-HSOF-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360A (Tj) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V | на замовлення 2248 шт: термін постачання 21-31 дні (днів) |
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IAUT300N10S5N014ATMA1 | INFINEON TECHNOLOGIES | IAUT300N10S5N014 SMD N channel transistors | товар відсутній | |||||||||||||||||||
IAUT300N10S5N015 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | товар відсутній | |||||||||||||||||||
IAUT300N10S5N015ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 16175 шт: термін постачання 21-30 дні (днів) |
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IAUT300N10S5N015ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 300A Automotive AEC-Q101 9-Pin(8+Tab) HSOF T/R | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUT300N10S5N015ATMA1 | INFINEON | Description: INFINEON - IAUT300N10S5N015ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 300 A, 0.0013 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: HSOF Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0013ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 7227 шт: термін постачання 21-31 дні (днів) |
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IAUT300N10S5N015ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 300A 8HSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUT300N10S5N015ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8 Case: PG-HSOF-8 Mounting: SMD On-state resistance: 1.5mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Kind of package: reel; tape Gate charge: 68nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 300A кількість в упаковці: 2000 шт | товар відсутній | |||||||||||||||||||
IAUT300N10S5N015ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 300A Automotive AEC-Q101 9-Pin(8+Tab) HSOF T/R | на замовлення 3450 шт: термін постачання 21-31 дні (днів) |
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IAUT300N10S5N015ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 300A Automotive 9-Pin(8+Tab) HSOF T/R | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUT300N10S5N015ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 300A Automotive AEC-Q101 9-Pin(8+Tab) HSOF T/R | товар відсутній | |||||||||||||||||||
IAUT300N10S5N015ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8 Case: PG-HSOF-8 Mounting: SMD On-state resistance: 1.5mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Kind of package: reel; tape Gate charge: 68nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 300A | товар відсутній | |||||||||||||||||||
IAUT300N10S5N015ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 300A Automotive AEC-Q101 9-Pin(8+Tab) HSOF T/R | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUT300N10S5N015ATMA1 | INFINEON | Description: INFINEON - IAUT300N10S5N015ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 300 A, 0.0013 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: HSOF Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0013ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 7227 шт: термін постачання 21-31 дні (днів) |
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IAUT300N10S5N015ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 300A 8HSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V | на замовлення 2782 шт: термін постачання 21-31 дні (днів) |
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IAUTN04S7N005 | Infineon Technologies | SP005569107 | товар відсутній | |||||||||||||||||||
IAUTN06S5N008ATMA1 | INFINEON | Description: INFINEON - IAUTN06S5N008ATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 510 A, 650 µohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 510A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 358W Bauform - Transistor: HSOF Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 650µohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1952 шт: термін постачання 21-31 дні (днів) |
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IAUTN06S5N008ATMA1 | INFINEON | Description: INFINEON - IAUTN06S5N008ATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 510 A, 650 µohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 510A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 358W Bauform - Transistor: HSOF Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 650µohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1952 шт: термін постачання 21-31 дні (днів) |
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IAUTN06S5N008ATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 510A 9-Pin(8+Tab) HSOF T/R Automotive AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUTN06S5N008ATMA1 | Infineon Technologies | MOSFET MOSFET_)40V 60V) | на замовлення 968 шт: термін постачання 21-30 дні (днів) |
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IAUTN06S5N008GATMA1 | INFINEON | Description: INFINEON - IAUTN06S5N008GATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 504 A, 640 µohm, HSOG, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 504A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 358W Bauform - Transistor: HSOG Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 640µohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1516 шт: термін постачання 21-31 дні (днів) |
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IAUTN06S5N008GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 504A 9-Pin(8+Tab) HSOG T/R Automotive AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUTN06S5N008GATMA1 | Infineon Technologies | MOSFET MOSFET_)40V 60V) | на замовлення 1776 шт: термін постачання 21-30 дні (днів) |
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IAUTN06S5N008GATMA1 | INFINEON | Description: INFINEON - IAUTN06S5N008GATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 504 A, 640 µohm, HSOG, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 504A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 358W Bauform - Transistor: HSOG Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 640µohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1516 шт: термін постачання 21-31 дні (днів) |
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IAUTN06S5N008TATMA1 | Infineon Technologies | MOSFETs N | на замовлення 2931 шт: термін постачання 21-30 дні (днів) |
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IAUTN06S5N008TATMA1 | INFINEON | Description: INFINEON - IAUTN06S5N008TATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 503 A, 630 µohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 503A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 358W Bauform - Transistor: HDSOP Anzahl der Pins: 16Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 630µohm SVHC: No SVHC (23-Jan-2024) | на замовлення 589 шт: термін постачання 21-31 дні (днів) |
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IAUTN06S5N008TATMA1 | INFINEON | Description: INFINEON - IAUTN06S5N008TATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 503 A, 630 µohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 503A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 358W Bauform - Transistor: HDSOP Anzahl der Pins: 16Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 630µohm SVHC: No SVHC (23-Jan-2024) | на замовлення 589 шт: термін постачання 21-31 дні (днів) |
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IAUTN08S7N007 | Infineon Technologies | IAUTN08S7N007 ***OPN not given yet*** | товар відсутній | |||||||||||||||||||
IAUTN08S7N014 | Infineon Technologies | SP005908409 | товар відсутній | |||||||||||||||||||
IAUTN12S5N017ATMA1 | INFINEON | Description: INFINEON - IAUTN12S5N017ATMA1 - Leistungs-MOSFET, n-Kanal, 120 V, 314 A, 0.0015 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 120V rohsCompliant: YES Dauer-Drainstrom Id: 314A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.6V euEccn: NLR Verlustleistung: 358W Bauform - Transistor: HSOF Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0015ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUTN12S5N017ATMA1 | Infineon Technologies | Description: MOSFET_(120V 300V) Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drain to Source Voltage (Vdss): 120 V | на замовлення 4921 шт: термін постачання 21-31 дні (днів) |
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IAUTN12S5N017ATMA1 | Infineon Technologies | Trans MOSFET N-CH 120V 314A | товар відсутній | |||||||||||||||||||
IAUTN12S5N017ATMA1 | Infineon Technologies | Description: MOSFET_(120V 300V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drain to Source Voltage (Vdss): 120 V | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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IAUTN12S5N017ATMA1 | Infineon Technologies | MOSFET | на замовлення 1465 шт: термін постачання 21-30 дні (днів) |
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IAUTN12S5N017ATMA1 | INFINEON | Description: INFINEON - IAUTN12S5N017ATMA1 - Leistungs-MOSFET, n-Kanal, 120 V, 314 A, 0.0015 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 120V rohsCompliant: YES Dauer-Drainstrom Id: 314A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.6V euEccn: NLR Verlustleistung: 358W Bauform - Transistor: HSOF Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0015ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUTN12S5N018GATMA1 | Infineon Technologies | MOSFET MOSFET_(120V 300V) | на замовлення 1688 шт: термін постачання 21-30 дні (днів) |
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IAUTN12S5N018GATMA1 | INFINEON | Description: INFINEON - IAUTN12S5N018GATMA1 - Leistungs-MOSFET, n-Kanal, 120 V, 310 A, 0.0015 ohm, HSOG, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 120V rohsCompliant: YES Dauer-Drainstrom Id: 310A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.6V euEccn: NLR Verlustleistung: 358W Bauform - Transistor: HSOG Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0015ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1552 шт: термін постачання 21-31 дні (днів) |
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IAUTN12S5N018GATMA1 | Infineon Technologies | Description: MOSFET_(120V 300V) Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drain to Source Voltage (Vdss): 120 V | на замовлення 1564 шт: термін постачання 21-31 дні (днів) |
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IAUTN12S5N018GATMA1 | Infineon Technologies | Description: MOSFET_(120V 300V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drain to Source Voltage (Vdss): 120 V | товар відсутній | |||||||||||||||||||
IAUTN12S5N018GATMA1 | Infineon Technologies | Trans MOSFET N-CH 120V 310A 9-Pin(8+Tab) HSOG T/R Automotive AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUTN12S5N018GATMA1 | INFINEON | Description: INFINEON - IAUTN12S5N018GATMA1 - Leistungs-MOSFET, n-Kanal, 120 V, 310 A, 0.0015 ohm, HSOG, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 120V rohsCompliant: YES Dauer-Drainstrom Id: 310A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.6V euEccn: NLR Verlustleistung: 358W Bauform - Transistor: HSOG Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0015ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1552 шт: термін постачання 21-31 дні (днів) |
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IAUTN12S5N018TATMA1 | INFINEON | Description: INFINEON - IAUTN12S5N018TATMA1 - Leistungs-MOSFET, n-Kanal, 120 V, 309 A, 0.0015 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 120V rohsCompliant: YES Dauer-Drainstrom Id: 309A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.6V euEccn: NLR Verlustleistung: 358W Bauform - Transistor: HDSOP Anzahl der Pins: 16Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0015ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1721 шт: термін постачання 21-31 дні (днів) |
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IAUTN12S5N018TATMA1 | Infineon Technologies | Trans MOSFET N-CH 120V 309A 16-Pin HDSOP EP T/R Automotive AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUTN12S5N018TATMA1 | INFINEON | Description: INFINEON - IAUTN12S5N018TATMA1 - Leistungs-MOSFET, n-Kanal, 120 V, 309 A, 0.0015 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 120V rohsCompliant: YES Dauer-Drainstrom Id: 309A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.6V euEccn: NLR Verlustleistung: 358W Bauform - Transistor: HDSOP Anzahl der Pins: 16Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0015ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1721 шт: термін постачання 21-31 дні (днів) |
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IAUTN12S5N018TATMA1 | Infineon Technologies | Description: MOSFET_(120V 300V) Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drain to Source Voltage (Vdss): 120 V | на замовлення 1064 шт: термін постачання 21-31 дні (днів) |
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IAUTN12S5N018TATMA1 | Infineon Technologies | MOSFET | на замовлення 110 шт: термін постачання 21-30 дні (днів) |
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IAUTN12S5N018TATMA1 | Infineon Technologies | Description: MOSFET_(120V 300V) Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drain to Source Voltage (Vdss): 120 V | товар відсутній | |||||||||||||||||||
IAUZ18N10S5L420ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 72A; 30W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Pulsed drain current: 72A Power dissipation: 30W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUZ18N10S5L420ATMA1 | Infineon Technologies | MOSFET_(75V,120V( | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUZ18N10S5L420ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 18A TSDSON-8-32 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 9A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 8µA Supplier Device Package: PG-TSDSON-8-32 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 50 V | товар відсутній | |||||||||||||||||||
IAUZ18N10S5L420ATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | товар відсутній | |||||||||||||||||||
IAUZ18N10S5L420ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 72A; 30W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Pulsed drain current: 72A Power dissipation: 30W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level | товар відсутній | |||||||||||||||||||
IAUZ18N10S5L420ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 18A TSDSON-8-32 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 9A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 8µA Supplier Device Package: PG-TSDSON-8-32 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 50 V | на замовлення 2834 шт: термін постачання 21-31 дні (днів) |
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IAUZ20N08S5L300ATMA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | на замовлення 4975 шт: термін постачання 183-192 дні (днів) |
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IAUZ20N08S5L300ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 14A; Idm: 80A; 30W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Features of semiconductor devices: logic level Kind of package: reel; tape Technology: OptiMOS™ 5 On-state resistance: 30mΩ Pulsed drain current: 80A Power dissipation: 30W Polarisation: unipolar Drain current: 14A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V | товар відсутній | |||||||||||||||||||
IAUZ20N08S5L300ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 20A 8TSDSON-32 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2V @ 8µA Supplier Device Package: PG-TSDSON-8-32 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 599 pF @ 40 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUZ20N08S5L300ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 14A; Idm: 80A; 30W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Features of semiconductor devices: logic level Kind of package: reel; tape Technology: OptiMOS™ 5 On-state resistance: 30mΩ Pulsed drain current: 80A Power dissipation: 30W Polarisation: unipolar Drain current: 14A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUZ20N08S5L300ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 20A Automotive 8-Pin TSDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUZ20N08S5L300ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 20A 8TSDSON-32 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2V @ 8µA Supplier Device Package: PG-TSDSON-8-32 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 599 pF @ 40 V Qualification: AEC-Q101 | на замовлення 4971 шт: термін постачання 21-31 дні (днів) |
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IAUZ30N06S5L140ATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 30A TSDSON-8-32 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tj) Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 10µA Supplier Device Package: PG-TSDSON-8-32 Part Status: Active Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V | на замовлення 24394 шт: термін постачання 21-31 дні (днів) |
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IAUZ30N06S5L140ATMA1 | Infineon Technologies | SP003244402 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUZ30N06S5L140ATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 30A TSDSON-8-32 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tj) Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 10µA Supplier Device Package: PG-TSDSON-8-32 Part Status: Active Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V | на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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IAUZ30N06S5L140ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 19154 шт: термін постачання 21-30 дні (днів) |
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IAUZ30N06S5L140ATMA1 | INFINEON | Description: INFINEON - IAUZ30N06S5L140ATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 30 A, 0.0112 ohm, TSDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 33W Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 33W Bauform - Transistor: TSDSON Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0112ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0112ohm SVHC: No SVHC (17-Jan-2023) | на замовлення 14298 шт: термін постачання 21-31 дні (днів) |
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IAUZ30N08S5N186ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7A; Idm: 120A; 41W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 7A Pulsed drain current: 120A Power dissipation: 41W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 22.7mΩ Mounting: SMD Gate charge: 12.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUZ30N08S5N186ATMA1 | Infineon Technologies | MOSFETs N | товар відсутній | |||||||||||||||||||
IAUZ30N08S5N186ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-TSDSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tj) Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 13µA Supplier Device Package: PG-TSDSON-8-32 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V | на замовлення 4820 шт: термін постачання 21-31 дні (днів) |
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IAUZ30N08S5N186ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-TSDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tj) Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 13µA Supplier Device Package: PG-TSDSON-8-32 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V | товар відсутній | |||||||||||||||||||
IAUZ30N08S5N186ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7A; Idm: 120A; 41W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 7A Pulsed drain current: 120A Power dissipation: 41W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 22.7mΩ Mounting: SMD Gate charge: 12.1nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUZ30N08S5N186ATMA1 | Infineon Technologies | SP005423086 | товар відсутній | |||||||||||||||||||
IAUZ30N10S5L240ATMA1 | INFINEON | Description: INFINEON - IAUZ30N10S5L240ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 30 A, 0.0195 ohm, PG-TSDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 45.5W Bauform - Transistor: PG-TSDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS-5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0195ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 4550 шт: термін постачання 21-31 дні (днів) |
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IAUZ30N10S5L240ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Pulsed drain current: 120A Power dissipation: 45.5W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level | товар відсутній | |||||||||||||||||||
IAUZ30N10S5L240ATMA1 | Infineon Technologies | N Channel Power MOSFET | товар відсутній | |||||||||||||||||||
IAUZ30N10S5L240ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 30A 8TSDSON-32 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 15A, 10V Power Dissipation (Max): 45.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 15µA Supplier Device Package: PG-TSDSON-8-32 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 9014 шт: термін постачання 21-31 дні (днів) |
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IAUZ30N10S5L240ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Pulsed drain current: 120A Power dissipation: 45.5W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUZ30N10S5L240ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 24929 шт: термін постачання 21-30 дні (днів) |
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IAUZ30N10S5L240ATMA1 | INFINEON | Description: INFINEON - IAUZ30N10S5L240ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 30 A, 0.0195 ohm, PG-TSDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100 rohsCompliant: YES Dauer-Drainstrom Id: 30 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 45.5 Gate-Source-Schwellenspannung, max.: 1.7 euEccn: NLR Verlustleistung: 45.5 Bauform - Transistor: PG-TSDSON Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8 Produktpalette: OptiMOS-5 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0195 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.0195 SVHC: No SVHC (17-Jan-2023) | на замовлення 4960 шт: термін постачання 21-31 дні (днів) |
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IAUZ30N10S5L240ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 30A 8TSDSON-32 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 15A, 10V Power Dissipation (Max): 45.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 15µA Supplier Device Package: PG-TSDSON-8-32 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 50 V Qualification: AEC-Q101 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUZ40N06S5L050ATMA1 | Infineon Technologies | SP005423482 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUZ40N06S5L050ATMA1 | Infineon Technologies | Description: MOSFET_)40V 60V) PG-TSDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tj) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 29µA Supplier Device Package: PG-TSDSON-8-33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUZ40N06S5L050ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 252A Power dissipation: 71W Case: PG-TSDSON-8 Gate-source voltage: ±16V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 36.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUZ40N06S5L050ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 3086 шт: термін постачання 21-30 дні (днів) |
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IAUZ40N06S5L050ATMA1 | Infineon Technologies | Description: MOSFET_)40V 60V) PG-TSDSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tj) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 29µA Supplier Device Package: PG-TSDSON-8-33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V Qualification: AEC-Q101 | на замовлення 4043 шт: термін постачання 21-31 дні (днів) |
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IAUZ40N06S5L050ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 252A Power dissipation: 71W Case: PG-TSDSON-8 Gate-source voltage: ±16V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 36.7nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUZ40N06S5N050ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 33123 шт: термін постачання 21-30 дні (днів) |
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IAUZ40N06S5N050ATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 40A TSDSON-8-33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 29µA Supplier Device Package: PG-TSDSON-8-33 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUZ40N06S5N050ATMA1 | INFINEON | Description: INFINEON - IAUZ40N06S5N050ATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 40 A, 0.004 ohm, TSDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 71W Bauform - Transistor: TSDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.004ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 2890 шт: термін постачання 21-31 дні (днів) |
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IAUZ40N06S5N050ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 241A; 71W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 241A Power dissipation: 71W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 30.5nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUZ40N06S5N050ATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 86A T/R | товар відсутній | |||||||||||||||||||
IAUZ40N06S5N050ATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 40A TSDSON-8-33 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 29µA Supplier Device Package: PG-TSDSON-8-33 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V | на замовлення 9634 шт: термін постачання 21-31 дні (днів) |
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IAUZ40N06S5N050ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 241A; 71W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 241A Power dissipation: 71W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 30.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUZ40N06S5N105ATMA1 | Infineon Technologies | Description: MOSFET_)40V 60V) PG-TSDSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 13µA Supplier Device Package: PG-TSDSON-8-32 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1099 pF @ 30 V Qualification: AEC-Q101 | на замовлення 4968 шт: термін постачання 21-31 дні (днів) |
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IAUZ40N06S5N105ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Pulsed drain current: 120A Power dissipation: 42W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: SMD Gate charge: 16.3nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUZ40N06S5N105ATMA1 | Infineon Technologies | SP005423484 | товар відсутній | |||||||||||||||||||
IAUZ40N06S5N105ATMA1 | Infineon Technologies | Description: MOSFET_)40V 60V) PG-TSDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 13µA Supplier Device Package: PG-TSDSON-8-32 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1099 pF @ 30 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
IAUZ40N06S5N105ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Pulsed drain current: 120A Power dissipation: 42W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: SMD Gate charge: 16.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUZ40N06S5N105ATMA1 | Infineon Technologies | MOSFETs N | товар відсутній | |||||||||||||||||||
IAUZ40N08S5N100ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A On-state resistance: 14.5mΩ Type of transistor: N-MOSFET Power dissipation: 68W Gate charge: 24.2nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 160A Case: PG-TSDSON-8 кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUZ40N08S5N100ATMA1 | Infineon Technologies | Description: MOSFET N-CH 75V 80A 8TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 27µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V Qualification: AEC-Q101 | на замовлення 6055 шт: термін постачання 21-31 дні (днів) |
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IAUZ40N08S5N100ATMA1 | Infineon Technologies | MOSFETs N | товар відсутній | |||||||||||||||||||
IAUZ40N08S5N100ATMA1 | Infineon Technologies | Description: MOSFET N-CH 75V 80A 8TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 27µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V Qualification: AEC-Q101 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUZ40N08S5N100ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A On-state resistance: 14.5mΩ Type of transistor: N-MOSFET Power dissipation: 68W Gate charge: 24.2nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 160A Case: PG-TSDSON-8 | товар відсутній | |||||||||||||||||||
IAUZ40N08S5N100ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUZ40N10S5L120ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 160A; 62W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 9A Pulsed drain current: 160A Power dissipation: 62W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 18.5mΩ Mounting: SMD Gate charge: 22.6nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUZ40N10S5L120ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-TSDSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tj) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 27µA Supplier Device Package: PG-TSDSON-8-33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1589 pF @ 50 V | на замовлення 4605 шт: термін постачання 21-31 дні (днів) |
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IAUZ40N10S5L120ATMA1 | Infineon Technologies | SP005423087 | товар відсутній | |||||||||||||||||||
IAUZ40N10S5L120ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 160A; 62W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 9A Pulsed drain current: 160A Power dissipation: 62W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 18.5mΩ Mounting: SMD Gate charge: 22.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUZ40N10S5L120ATMA1 | Infineon Technologies | Description: MOSFET_(75V 120V( PG-TSDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tj) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 27µA Supplier Device Package: PG-TSDSON-8-33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1589 pF @ 50 V | товар відсутній | |||||||||||||||||||
IAUZ40N10S5L120ATMA1 | Infineon Technologies | MOSFETs N | товар відсутній | |||||||||||||||||||
IAUZ40N10S5N130ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 40A 8TSDSON-33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 27µA Supplier Device Package: PG-TSDSON-8-33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 50 V Qualification: AEC-Q101 | на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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IAUZ40N10S5N130ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 40A Automotive 8-Pin TSDSON EP T/R | товар відсутній | |||||||||||||||||||
IAUZ40N10S5N130ATMA1 | INFINEON | Description: INFINEON - IAUZ40N10S5N130ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 40 A, 0.0108 ohm, PG-TSDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 68W Bauform - Transistor: PG-TSDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS-5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0108ohm SVHC: No SVHC (17-Jan-2023) | на замовлення 4975 шт: термін постачання 21-31 дні (днів) |
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IAUZ40N10S5N130ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 160A; 68W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 160A Power dissipation: 68W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
IAUZ40N10S5N130ATMA1 | Infineon Technologies | MOSFETs N | на замовлення 19688 шт: термін постачання 21-30 дні (днів) |
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IAUZ40N10S5N130ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 40A 8TSDSON-33 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 27µA Supplier Device Package: PG-TSDSON-8-33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 50 V Qualification: AEC-Q101 | на замовлення 19497 шт: термін постачання 21-31 дні (днів) |
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IAUZ40N10S5N130ATMA1 | INFINEON | Description: INFINEON - IAUZ40N10S5N130ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 40 A, 0.0108 ohm, PG-TSDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 68W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 68W Bauform - Transistor: PG-TSDSON Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS-5 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0108ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0108ohm SVHC: No SVHC (17-Jan-2023) | на замовлення 4975 шт: термін постачання 21-31 дні (днів) |
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IAUZ40N10S5N130ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 160A; 68W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 160A Power dissipation: 68W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
IAUZN04S7N028 | Infineon Technologies | SP005831179 | товар відсутній |