на замовлення 2568 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 240.02 грн |
| 10+ | 198.54 грн |
| 25+ | 167.6 грн |
| 100+ | 139.55 грн |
| 250+ | 135.95 грн |
| 500+ | 124.44 грн |
| 1000+ | 106.46 грн |
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Технічний опис IAUA170N10S5N031AUMA1 Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5, Packaging: Tape & Reel (TR), Package / Case: 5-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tj), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 85A, 10V, Power Dissipation (Max): 197W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 110µA, Supplier Device Package: PG-HSOF-5-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6405 pF @ 50 V.
Інші пропозиції IAUA170N10S5N031AUMA1 за ціною від 93.26 грн до 291.02 грн
| Фото | Назва | Виробник | Інформація |
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IAUA170N10S5N031AUMA1 | Виробник : Infineon Technologies |
 Description: MOSFET_(75V 120V( PG-HSOF-5Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tj) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 85A, 10V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 110µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6405 pF @ 50 V |
на замовлення 1874 шт: термін постачання 21-31 дні (днів) |
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| IAUA170N10S5N031AUMA1 | Виробник : Infineon Technologies |
SP005423391 |
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| IAUA170N10S5N031AUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 519A; 197W Case: PG-HSOF-5 Mounting: SMD On-state resistance: 4mΩ Kind of package: reel; tape Technology: OptiMOS™ 5 Polarisation: unipolar Gate charge: 88nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 519A Drain-source voltage: 100V Drain current: 22A Type of transistor: N-MOSFET Power dissipation: 197W кількість в упаковці: 2000 шт |
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IAUA170N10S5N031AUMA1 | Виробник : Infineon Technologies |
Description: MOSFET_(75V 120V( PG-HSOF-5 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tj) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 85A, 10V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 110µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6405 pF @ 50 V |
товар відсутній |
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| IAUA170N10S5N031AUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 519A; 197W Case: PG-HSOF-5 Mounting: SMD On-state resistance: 4mΩ Kind of package: reel; tape Technology: OptiMOS™ 5 Polarisation: unipolar Gate charge: 88nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 519A Drain-source voltage: 100V Drain current: 22A Type of transistor: N-MOSFET Power dissipation: 197W |
товар відсутній |