на замовлення 500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 223.84 грн |
| 10+ | 184.95 грн |
| 25+ | 152.36 грн |
| 100+ | 129.79 грн |
| 250+ | 122.74 грн |
| 500+ | 115.68 грн |
| 1000+ | 98.75 грн |
Відгуки про товар
Написати відгук
Технічний опис IAUAN04S7N006AUMA1 Infineon Technologies
Description: IAUAN04S7N006AUMA1, Packaging: Tape & Reel (TR), Package / Case: 5-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj), Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 3V @ 95µA, Supplier Device Package: PG-HSOF-5-1, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V, Qualification: AEC-Q101.
Інші пропозиції IAUAN04S7N006AUMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IAUAN04S7N006AUMA1 | Виробник : Infineon Technologies |
Description: IAUAN04S7N006AUMA1 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj) Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 3V @ 95µA Supplier Device Package: PG-HSOF-5-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V Qualification: AEC-Q101 |
товар відсутній |
|
|
|
IAUAN04S7N006AUMA1 | Виробник : Infineon Technologies |
Description: IAUAN04S7N006AUMA1 Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj) Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 3V @ 95µA Supplier Device Package: PG-HSOF-5-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V Qualification: AEC-Q101 |
товар відсутній |