![IAUC120N04S6N009ATMA1 IAUC120N04S6N009ATMA1](https://www.mouser.com/images/infineon/lrg/PG_TDSON_8_DSL.jpg)
на замовлення 1486 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4+ | 104.14 грн |
100+ | 101.84 грн |
250+ | 87.15 грн |
500+ | 81.53 грн |
1000+ | 78.72 грн |
2500+ | 77.31 грн |
5000+ | 75.21 грн |
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Технічний опис IAUC120N04S6N009ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 120A 8TDSON-33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 0.9mOhm @ 60A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 90µA, Supplier Device Package: PG-TDSON-8-33, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції IAUC120N04S6N009ATMA1
Фото | Назва | Виробник | Інформація |
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IAUC120N04S6N009ATMA1 | Виробник : Infineon Technologies |
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товар відсутній |
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IAUC120N04S6N009ATMA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 0.9mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 5000 шт |
товар відсутній |
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IAUC120N04S6N009ATMA1 | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 60A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 90µA Supplier Device Package: PG-TDSON-8-33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |
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IAUC120N04S6N009ATMA1 | Виробник : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 60A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 90µA Supplier Device Package: PG-TDSON-8-33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |
|
IAUC120N04S6N009ATMA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 0.9mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
товар відсутній |