на замовлення 1710 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
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2+ | 170.56 грн |
10+ | 140.64 грн |
100+ | 96.99 грн |
250+ | 89.26 грн |
500+ | 80.83 грн |
1000+ | 69.3 грн |
2000+ | 66 грн |
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Технічний опис IAUCN04S6N013TATMA1 Infineon Technologies
Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 230A (Tc), Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V, Power Dissipation (Max): 133W (Tc), Vgs(th) (Max) @ Id: 3V @ 60µA, Supplier Device Package: PG-LHDSO-10-1, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції IAUCN04S6N013TATMA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IAUCN04S6N013TATMA1 | Виробник : Infineon Technologies |
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товар відсутній |
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IAUCN04S6N013TATMA1 | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V Power Dissipation (Max): 133W (Tc) Vgs(th) (Max) @ Id: 3V @ 60µA Supplier Device Package: PG-LHDSO-10-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |
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IAUCN04S6N013TATMA1 | Виробник : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V Power Dissipation (Max): 133W (Tc) Vgs(th) (Max) @ Id: 3V @ 60µA Supplier Device Package: PG-LHDSO-10-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |