IAUC60N10S5L110ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 50 V
на замовлення 3148 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 93.09 грн |
| 10+ | 73.4 грн |
| 100+ | 57.08 грн |
| 500+ | 45.4 грн |
| 1000+ | 36.98 грн |
| 2000+ | 34.82 грн |
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Технічний опис IAUC60N10S5L110ATMA1 Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 30µA, Supplier Device Package: PG-TDSON-8-33, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 50 V.
Інші пропозиції IAUC60N10S5L110ATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IAUC60N10S5L110ATMA1 | Виробник : Infineon Technologies |
SP005422122 |
товар відсутній |
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| IAUC60N10S5L110ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Pulsed drain current: 240A Power dissipation: 88W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 15.3mΩ Mounting: SMD Gate charge: 24.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
товар відсутній |
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IAUC60N10S5L110ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET_(75V 120V( PG-TDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: PG-TDSON-8-33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 50 V |
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IAUC60N10S5L110ATMA1 | Виробник : Infineon Technologies |
MOSFET MOSFET_(75V 120V( |
товар відсутній |
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| IAUC60N10S5L110ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Pulsed drain current: 240A Power dissipation: 88W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 15.3mΩ Mounting: SMD Gate charge: 24.1nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |