на замовлення 9567 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.45 грн |
| 10+ | 74.45 грн |
| 100+ | 54.36 грн |
| 500+ | 47.53 грн |
| 1000+ | 37.15 грн |
| 2500+ | 36.59 грн |
| 5000+ | 34.36 грн |
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Технічний опис IAUC45N04S6L063HATMA1 Infineon Technologies
Description: MOSFET 2N-CH 40V 45A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 41W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 45A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V, Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 9µA, Supplier Device Package: PG-TDSON-8-57, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції IAUC45N04S6L063HATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IAUC45N04S6L063HATMA1 | Виробник : Infineon Technologies |
 Automotive Power Mosfet |
товар відсутній |
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| IAUC45N04S6L063HATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 15A; Idm: 134A; 41W Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET On-state resistance: 8.5mΩ Drain current: 15A Drain-source voltage: 40V Case: PG-TDSON-8 Gate charge: 13nC Technology: OptiMOS™ 6 Kind of channel: enhanced Gate-source voltage: ±16V Polarisation: unipolar Pulsed drain current: 134A Power dissipation: 41W кількість в упаковці: 5000 шт |
товар відсутній |
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IAUC45N04S6L063HATMA1 | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 40V 45A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 45A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 9µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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IAUC45N04S6L063HATMA1 | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 40V 45A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 45A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 9µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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| IAUC45N04S6L063HATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 15A; Idm: 134A; 41W Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET On-state resistance: 8.5mΩ Drain current: 15A Drain-source voltage: 40V Case: PG-TDSON-8 Gate charge: 13nC Technology: OptiMOS™ 6 Kind of channel: enhanced Gate-source voltage: ±16V Polarisation: unipolar Pulsed drain current: 134A Power dissipation: 41W |
товар відсутній |