![IAUZ40N06S5L050ATMA1 IAUZ40N06S5L050ATMA1](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/3725/MFG_IAUZ40N06S5L050ATMA1.jpg)
IAUZ40N06S5L050ATMA1 Infineon Technologies
![Infineon-IAUZ40N06S5L050-DataSheet-v01_02-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5178d6ff1](/images/adobe-acrobat.png)
Description: MOSFET_)40V 60V) PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 29µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
Qualification: AEC-Q101
на замовлення 4043 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4+ | 94.28 грн |
10+ | 74.46 грн |
100+ | 57.88 грн |
500+ | 46.05 грн |
1000+ | 37.51 грн |
2000+ | 35.31 грн |
Відгуки про товар
Написати відгук
Технічний опис IAUZ40N06S5L050ATMA1 Infineon Technologies
Description: MOSFET_)40V 60V) PG-TSDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tj), Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 29µA, Supplier Device Package: PG-TSDSON-8-33, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 36.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції IAUZ40N06S5L050ATMA1 за ціною від 34.44 грн до 103.32 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IAUZ40N06S5L050ATMA1 | Виробник : Infineon Technologies |
![]() |
на замовлення 3086 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
IAUZ40N06S5L050ATMA1 | Виробник : Infineon Technologies |
![]() |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
IAUZ40N06S5L050ATMA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 252A Power dissipation: 71W Case: PG-TSDSON-8 Gate-source voltage: ±16V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 36.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
товар відсутній |
||||||||||||||||||
![]() |
IAUZ40N06S5L050ATMA1 | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tj) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 29µA Supplier Device Package: PG-TSDSON-8-33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V Qualification: AEC-Q101 |
товар відсутній |
|||||||||||||||||
IAUZ40N06S5L050ATMA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 252A Power dissipation: 71W Case: PG-TSDSON-8 Gate-source voltage: ±16V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 36.7nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |