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IAUCN04S7L005ATMA1 Infineon Technologies
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Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 430A (Tj)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 88A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 95µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 20 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 186.21 грн |
10+ | 161.31 грн |
25+ | 152.48 грн |
100+ | 124.03 грн |
250+ | 117.66 грн |
500+ | 105.58 грн |
1000+ | 87.58 грн |
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Технічний опис IAUCN04S7L005ATMA1 Infineon Technologies
Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 430A (Tj), Rds On (Max) @ Id, Vgs: 0.52mOhm @ 88A, 10V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 1.8V @ 95µA, Supplier Device Package: PG-TDSON-8-43, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 20 V, Qualification: AEC-Q101.
Інші пропозиції IAUCN04S7L005ATMA1 за ціною від 89.2 грн до 201.64 грн
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IAUCN04S7L005ATMA1 | Виробник : Infineon Technologies |
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на замовлення 776 шт: термін постачання 21-30 дні (днів) |
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IAUCN04S7L005ATMA1 | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 430A (Tj) Rds On (Max) @ Id, Vgs: 0.52mOhm @ 88A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 95µA Supplier Device Package: PG-TDSON-8-43 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 20 V Qualification: AEC-Q101 |
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