| Фото | Назва | Виробник | Інформація |
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| MMIX1X200N60B3 | IXYS |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 600V; 120A; 625W; SMPD Pulsed collector current: 1kA Turn-on time: 140ns Turn-off time: 395ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Gate charge: 315nC Technology: BiMOSFET™; GenX3™; XPT™ Mounting: SMD Case: SMPD Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 120A |
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| MMIX1X200N60B3H1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 600V; 72A; 520W; SMPD Pulsed collector current: 1kA Turn-on time: 140ns Turn-off time: 395ns Type of transistor: IGBT Power dissipation: 520W Kind of package: tube Gate charge: 315nC Technology: BiMOSFET™; GenX3™; XPT™ Mounting: SMD Case: SMPD Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 72A |
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IXFN102N30P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A Case: SOT227B Drain current: 86A On-state resistance: 33mΩ Power dissipation: 570W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 224nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 250A Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 300V |
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IXFN110N85X | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A Technology: HiPerFET™; X-Class Polarisation: unipolar Drain-source voltage: 850V Drain current: 110A Pulsed drain current: 220A Power dissipation: 1170W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 33mΩ Gate charge: 425nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 205ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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IXFN130N90SK | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 900V Drain current: 109A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 10mΩ Technology: SiC Kind of channel: enhanced Gate charge: 68nC Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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IXFN140N25T | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 250V; 120A; SOT227B; screw; Idm: 400A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 250V Drain current: 120A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 17mΩ Pulsed drain current: 400A Power dissipation: 690W Technology: GigaMOS™; HiPerFET™ Kind of channel: enhanced Gate charge: 255nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw |
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IXFN140N30P | IXYS |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A Polarisation: unipolar Power dissipation: 700W On-state resistance: 24mΩ Drain current: 110A Drain-source voltage: 300V Reverse recovery time: 200ns Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 185nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 300A Case: SOT227B |
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IXFN150N65X2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 145A Pulsed drain current: 300A Power dissipation: 1.04kW Case: SOT227B Gate-source voltage: ±30V On-state resistance: 17mΩ Gate charge: 355nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 190ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFN160N30T | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 130A; SOT227B; screw; Idm: 444A Technology: GigaMOS™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 130A Pulsed drain current: 444A Power dissipation: 900W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 19mΩ Gate charge: 376nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFN170N25X3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 250V; 146A; SOT227B; screw; Idm: 400A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 250V Drain current: 146A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 7.4mΩ Pulsed drain current: 400A Power dissipation: 390W Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate charge: 0.19µC Reverse recovery time: 135ns Gate-source voltage: ±30V Mechanical mounting: screw |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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IXFN170N30P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 138A; SOT227B; screw; Idm: 500A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 138A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 18mΩ Pulsed drain current: 500A Power dissipation: 890W Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 258nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw |
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IXFN180N15P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A Power dissipation: 680W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 240nC Technology: HiPerFET™; PolarHT™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 380A Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 150V Drain current: 150A On-state resistance: 11mΩ |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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IXFN180N25T | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 250V Drain current: 168A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 12.9mΩ Pulsed drain current: 500A Power dissipation: 900W Technology: GigaMOS™ Kind of channel: enhanced Gate charge: 364nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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| VUE130-06NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 600V; If: 130A; Ifsm: 600A Type of bridge rectifier: three-phase Max. off-state voltage: 0.6kV Load current: 130A Max. forward impulse current: 600A Electrical mounting: THT Version: module Max. forward voltage: 2.04V Leads: wire Ø 1.5mm Case: ECO-PAC 2 Mechanical mounting: screw Technology: FRED |
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| VUE130-12NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 130A; Ifsm: 500A Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Load current: 130A Max. forward impulse current: 0.5kA Electrical mounting: THT Version: module Max. forward voltage: 2.07V Leads: wire Ø 1.5mm Case: ECO-PAC 2 Mechanical mounting: screw Technology: FRED |
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CS30-12IO1 | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube Mounting: THT Type of thyristor: thyristor Case: TO247AD Max. off-state voltage: 1.2kV Max. load current: 47A Load current: 30A Gate current: 55mA Max. forward impulse current: 0.4kA Kind of package: tube |
на замовлення 304 шт: термін постачання 21-30 дні (днів) |
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CS30-14IO1 | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.4kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube Mounting: THT Type of thyristor: thyristor Case: TO247AD Max. off-state voltage: 1.4kV Max. load current: 47A Load current: 30A Gate current: 55mA Max. forward impulse current: 0.4kA Kind of package: tube |
на замовлення 277 шт: термін постачання 21-30 дні (днів) |
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CS30-16IO1 | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube Mounting: THT Type of thyristor: thyristor Case: TO247AD Max. off-state voltage: 1.6kV Max. load current: 47A Load current: 30A Gate current: 55mA Max. forward impulse current: 0.4kA Kind of package: tube |
на замовлення 295 шт: термін постачання 21-30 дні (днів) |
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| DCG20B650LB-TRR | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 650V; 16A; SMPD-B; SMT; SiC Type of bridge rectifier: single-phase Max. off-state voltage: 650V Load current: 16A Case: SMPD-B Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 2V Features of semiconductor devices: Schottky Technology: SiC |
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| DCG20B650LB-TUB | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 650V; 16A; SMPD-B; SMT; tube Type of bridge rectifier: single-phase Max. off-state voltage: 650V Load current: 16A Case: SMPD-B Electrical mounting: SMT Kind of package: tube Max. forward voltage: 2V Features of semiconductor devices: Schottky Technology: SiC |
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| DMA120B800LB-TRR | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; reel,tape Kind of package: reel; tape Electrical mounting: SMT Type of bridge rectifier: single-phase Case: SMPD-B Max. off-state voltage: 0.8kV Load current: 130A |
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| DMA120B800LB-TUB | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; tube Kind of package: tube Electrical mounting: SMT Type of bridge rectifier: single-phase Case: SMPD-B Max. off-state voltage: 0.8kV Load current: 130A |
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| DLA100B800LB-TRR | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A Kind of package: reel; tape Electrical mounting: SMT Type of bridge rectifier: single-phase Case: SMPD-B Max. off-state voltage: 0.8kV Max. forward voltage: 1.44V Load current: 124A Max. forward impulse current: 0.4kA |
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| DLA100B800LB-TUB | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A Kind of package: tube Electrical mounting: SMT Type of bridge rectifier: single-phase Case: SMPD-B Max. off-state voltage: 0.8kV Max. forward voltage: 1.44V Load current: 124A Max. forward impulse current: 0.4kA |
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| DPG60B600LB-TRR | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A Technology: HiPerFRED™ Case: SMPD-B Kind of package: reel; tape Max. off-state voltage: 600V Electrical mounting: SMT Type of bridge rectifier: single-phase Max. forward impulse current: 250A Max. forward voltage: 2.21V Load current: 60A |
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| DPG60B600LB-TUB | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A Technology: HiPerFRED™ Case: SMPD-B Kind of package: tube Max. off-state voltage: 600V Electrical mounting: SMT Type of bridge rectifier: single-phase Max. forward impulse current: 250A Max. forward voltage: 2.21V Load current: 60A |
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| DLA100B1200LB-TRR | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A Kind of package: reel; tape Load current: 124A Max. forward impulse current: 0.4kA Electrical mounting: SMT Type of bridge rectifier: single-phase Case: SMPD-B Max. off-state voltage: 1.2kV Max. forward voltage: 1.23V |
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DLA100B1200LB-TUB | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A Kind of package: tube Load current: 124A Max. forward impulse current: 0.4kA Electrical mounting: SMT Type of bridge rectifier: single-phase Case: SMPD-B Max. off-state voltage: 1.2kV Max. forward voltage: 1.23V |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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| DHG60U1200LB-TRR | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Load current: 60A Max. forward impulse current: 200A Electrical mounting: SMT Case: SMPD-B Kind of package: reel; tape Max. forward voltage: 3.15V Technology: Sonic FRD™ |
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| DHG60U1200LB-TUB | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Load current: 60A Max. forward impulse current: 200A Electrical mounting: SMT Case: SMPD-B Kind of package: tube Max. forward voltage: 3.15V Technology: Sonic FRD™ |
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LDA200S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Number of channels: 2 Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
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LDA200STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Number of channels: 2 Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
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LDA201S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Number of channels: 2 Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
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LDA201STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Number of channels: 2 Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
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LDA202S | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Number of channels: 2 Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
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LDA202STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Number of channels: 2 Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
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LDA203S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Number of channels: 2 Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
на замовлення 209 шт: термін постачання 21-30 дні (днів) |
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LDA203STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Number of channels: 2 Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
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IXTH500N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO247-3; 84ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 500A Power dissipation: 1kW Case: TO247-3 On-state resistance: 1.6mΩ Mounting: THT Gate charge: 405nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 84ns |
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IXFB150N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 150A Power dissipation: 1.56kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 17mΩ Mounting: THT Gate charge: 355nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 260ns |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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IXTP80N12T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 80A Power dissipation: 325W Case: TO220AB On-state resistance: 17mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 90ns |
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IXTA110N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 180W Case: TO263 On-state resistance: 6.6mΩ Mounting: SMD Gate charge: 57nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 38ns |
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IXTP110N055T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 180W Case: TO220AB On-state resistance: 6.6mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 38ns |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
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IXTK102N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns Case: TO264 Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Gate charge: 152nC Kind of channel: enhanced Reverse recovery time: 450ns Drain-source voltage: 650V Drain current: 102A On-state resistance: 30mΩ |
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| VVZB135-16IOXT | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV Mechanical mounting: screw Electrical mounting: Press-in PCB Application: Inverter Case: E2-Pack Power dissipation: 390W Technology: X2PT Pulsed collector current: 225A Max. off-state voltage: 1.2kV Type of module: IGBT Semiconductor structure: diode/thyristor/IGBT Gate-emitter voltage: ±20V Collector current: 84A Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor |
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IXTH02N250 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us Case: TO247-3 Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Reverse recovery time: 1.5µs Drain-source voltage: 2.5kV Drain current: 0.2A On-state resistance: 450Ω |
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IXTH02N450HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us Case: TO247HV Mounting: THT Kind of package: tube Drain current: 0.2A Power dissipation: 113W Polarisation: unipolar Drain-source voltage: 4.5kV Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.6µs Type of transistor: N-MOSFET Kind of channel: enhanced On-state resistance: 625Ω |
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IXTH04N300P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us Reverse recovery time: 1.1µs Drain-source voltage: 3kV Drain current: 0.4A On-state resistance: 190Ω Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 13nC Kind of channel: enhanced Mounting: THT Case: TO247HV |
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IXTH05N250P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.5kV; 0.33A; Idm: 1A; 104W Type of transistor: N-MOSFET Technology: Polar3™ Polarisation: unipolar Drain-source voltage: 2.5kV Drain current: 0.33A Pulsed drain current: 1A Power dissipation: 104W Case: TO247HV Gate-source voltage: ±20V On-state resistance: 110Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.2µs |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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IXTH06N220P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A Type of transistor: N-MOSFET Technology: Polar3™ Polarisation: unipolar Drain-source voltage: 2.2kV Drain current: 0.38A Pulsed drain current: 1.2A Power dissipation: 104W Case: TO247HV Gate-source voltage: ±20V On-state resistance: 80Ω Mounting: THT Gate charge: 10.4nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.1µs |
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IXTH10N100D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 10A Power dissipation: 695W Case: TO247-3 On-state resistance: 1.5Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 70ns |
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IXTH10P50P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -500V Drain current: -10A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 414ns |
на замовлення 280 шт: термін постачання 21-30 дні (днів) |
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IXTH10P60 | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO247-3 Power dissipation: 300W Gate charge: 135nC Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 0.5µs Drain-source voltage: -600V Drain current: -10A On-state resistance: 1Ω Type of transistor: P-MOSFET |
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IXTH11P50 | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Drain current: -11A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 0.5µs |
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IXTH120P065T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -65V Drain current: -120A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 10mΩ Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 53ns |
на замовлення 138 шт: термін постачання 21-30 дні (днів) |
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IXTH130N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W Type of transistor: N-MOSFET Technology: Trench™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 75A Pulsed drain current: 320A Power dissipation: 830W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 150ns |
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IXTH140N075L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO247-3; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 140A Power dissipation: 540W Case: TO247-3 On-state resistance: 11mΩ Mounting: THT Gate charge: 275nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 200ns |
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IXTH140P05T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -50V Drain current: -140A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 9mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 53ns |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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IXTH140P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -140A Power dissipation: 568W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 10mΩ Mounting: THT Gate charge: 400nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 130ns |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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CPC3708ZTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223 Mounting: SMD Kind of package: reel; tape Case: SOT223 Kind of channel: depleted Gate-source voltage: ±20V Polarisation: unipolar Power dissipation: 2.5W Type of transistor: N-MOSFET On-state resistance: 8Ω Drain current: 0.13A Drain-source voltage: 350V |
на замовлення 927 шт: термін постачання 21-30 дні (днів) |
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| MMIX1X200N60B3 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 120A; 625W; SMPD
Pulsed collector current: 1kA
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 315nC
Technology: BiMOSFET™; GenX3™; XPT™
Mounting: SMD
Case: SMPD
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 120A
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 120A; 625W; SMPD
Pulsed collector current: 1kA
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 315nC
Technology: BiMOSFET™; GenX3™; XPT™
Mounting: SMD
Case: SMPD
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 120A
товар відсутній
| MMIX1X200N60B3H1 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 72A; 520W; SMPD
Pulsed collector current: 1kA
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 520W
Kind of package: tube
Gate charge: 315nC
Technology: BiMOSFET™; GenX3™; XPT™
Mounting: SMD
Case: SMPD
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 72A
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 72A; 520W; SMPD
Pulsed collector current: 1kA
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 520W
Kind of package: tube
Gate charge: 315nC
Technology: BiMOSFET™; GenX3™; XPT™
Mounting: SMD
Case: SMPD
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 72A
товар відсутній
| IXFN102N30P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A
Case: SOT227B
Drain current: 86A
On-state resistance: 33mΩ
Power dissipation: 570W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 224nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 250A
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Drain-source voltage: 300V
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A
Case: SOT227B
Drain current: 86A
On-state resistance: 33mΩ
Power dissipation: 570W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 224nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 250A
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Drain-source voltage: 300V
товар відсутній
| IXFN110N85X |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 110A
Pulsed drain current: 220A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 33mΩ
Gate charge: 425nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 205ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 110A
Pulsed drain current: 220A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 33mΩ
Gate charge: 425nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 205ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5081.66 грн |
| IXFN130N90SK |
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 900V
Drain current: 109A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10mΩ
Technology: SiC
Kind of channel: enhanced
Gate charge: 68nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 900V
Drain current: 109A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10mΩ
Technology: SiC
Kind of channel: enhanced
Gate charge: 68nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| IXFN140N25T |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 120A; SOT227B; screw; Idm: 400A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 120A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 17mΩ
Pulsed drain current: 400A
Power dissipation: 690W
Technology: GigaMOS™; HiPerFET™
Kind of channel: enhanced
Gate charge: 255nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 120A; SOT227B; screw; Idm: 400A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 120A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 17mΩ
Pulsed drain current: 400A
Power dissipation: 690W
Technology: GigaMOS™; HiPerFET™
Kind of channel: enhanced
Gate charge: 255nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| IXFN140N30P | |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Polarisation: unipolar
Power dissipation: 700W
On-state resistance: 24mΩ
Drain current: 110A
Drain-source voltage: 300V
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 185nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 300A
Case: SOT227B
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Polarisation: unipolar
Power dissipation: 700W
On-state resistance: 24mΩ
Drain current: 110A
Drain-source voltage: 300V
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 185nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 300A
Case: SOT227B
товар відсутній
| IXFN150N65X2 |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 145A
Pulsed drain current: 300A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 17mΩ
Gate charge: 355nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 190ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 145A
Pulsed drain current: 300A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 17mΩ
Gate charge: 355nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 190ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFN160N30T |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; SOT227B; screw; Idm: 444A
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 130A
Pulsed drain current: 444A
Power dissipation: 900W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Gate charge: 376nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; SOT227B; screw; Idm: 444A
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 130A
Pulsed drain current: 444A
Power dissipation: 900W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Gate charge: 376nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFN170N25X3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 146A; SOT227B; screw; Idm: 400A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 146A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.4mΩ
Pulsed drain current: 400A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 0.19µC
Reverse recovery time: 135ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 146A; SOT227B; screw; Idm: 400A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 146A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.4mΩ
Pulsed drain current: 400A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 0.19µC
Reverse recovery time: 135ns
Gate-source voltage: ±30V
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2024.06 грн |
| 2+ | 1777.13 грн |
| IXFN170N30P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 138A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 138A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 18mΩ
Pulsed drain current: 500A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 258nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 138A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 138A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 18mΩ
Pulsed drain current: 500A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 258nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| IXFN180N15P | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A
Power dissipation: 680W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 240nC
Technology: HiPerFET™; PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 380A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Drain-source voltage: 150V
Drain current: 150A
On-state resistance: 11mΩ
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A
Power dissipation: 680W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 240nC
Technology: HiPerFET™; PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 380A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Drain-source voltage: 150V
Drain current: 150A
On-state resistance: 11mΩ
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1565.15 грн |
| 2+ | 1374.23 грн |
| IXFN180N25T |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Kind of channel: enhanced
Gate charge: 364nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Kind of channel: enhanced
Gate charge: 364nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1397.85 грн |
| 2+ | 1227.58 грн |
| VUE130-06NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 130A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 130A
Max. forward impulse current: 600A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.04V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Technology: FRED
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 130A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 130A
Max. forward impulse current: 600A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.04V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Technology: FRED
товар відсутній
| VUE130-12NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 130A; Ifsm: 500A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 130A
Max. forward impulse current: 0.5kA
Electrical mounting: THT
Version: module
Max. forward voltage: 2.07V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Technology: FRED
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 130A; Ifsm: 500A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 130A
Max. forward impulse current: 0.5kA
Electrical mounting: THT
Version: module
Max. forward voltage: 2.07V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Technology: FRED
товар відсутній
| CS30-12IO1 |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO247AD
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Max. forward impulse current: 0.4kA
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO247AD
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Max. forward impulse current: 0.4kA
Kind of package: tube
на замовлення 304 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 343.99 грн |
| 3+ | 282.39 грн |
| 4+ | 254.81 грн |
| 10+ | 240.29 грн |
| 30+ | 236.66 грн |
| CS30-14IO1 |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO247AD
Max. off-state voltage: 1.4kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Max. forward impulse current: 0.4kA
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO247AD
Max. off-state voltage: 1.4kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Max. forward impulse current: 0.4kA
Kind of package: tube
на замовлення 277 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 322.88 грн |
| 3+ | 264.97 грн |
| 4+ | 249 грн |
| 10+ | 235.21 грн |
| 30+ | 226.5 грн |
| CS30-16IO1 | |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO247AD
Max. off-state voltage: 1.6kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Max. forward impulse current: 0.4kA
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO247AD
Max. off-state voltage: 1.6kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Max. forward impulse current: 0.4kA
Kind of package: tube
на замовлення 295 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 370.57 грн |
| 3+ | 304.17 грн |
| 4+ | 274.41 грн |
| 9+ | 259.16 грн |
| 30+ | 255.53 грн |
| DCG20B650LB-TRR |
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 650V; 16A; SMPD-B; SMT; SiC
Type of bridge rectifier: single-phase
Max. off-state voltage: 650V
Load current: 16A
Case: SMPD-B
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 2V
Features of semiconductor devices: Schottky
Technology: SiC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 650V; 16A; SMPD-B; SMT; SiC
Type of bridge rectifier: single-phase
Max. off-state voltage: 650V
Load current: 16A
Case: SMPD-B
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 2V
Features of semiconductor devices: Schottky
Technology: SiC
товар відсутній
| DCG20B650LB-TUB |
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 650V; 16A; SMPD-B; SMT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 650V
Load current: 16A
Case: SMPD-B
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 2V
Features of semiconductor devices: Schottky
Technology: SiC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 650V; 16A; SMPD-B; SMT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 650V
Load current: 16A
Case: SMPD-B
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 2V
Features of semiconductor devices: Schottky
Technology: SiC
товар відсутній
| DMA120B800LB-TRR |
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; reel,tape
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 0.8kV
Load current: 130A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; reel,tape
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 0.8kV
Load current: 130A
товар відсутній
| DMA120B800LB-TUB |
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; tube
Kind of package: tube
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 0.8kV
Load current: 130A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; tube
Kind of package: tube
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 0.8kV
Load current: 130A
товар відсутній
| DLA100B800LB-TRR |
|
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.44V
Load current: 124A
Max. forward impulse current: 0.4kA
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.44V
Load current: 124A
Max. forward impulse current: 0.4kA
товар відсутній
| DLA100B800LB-TUB |
|
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Kind of package: tube
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.44V
Load current: 124A
Max. forward impulse current: 0.4kA
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Kind of package: tube
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.44V
Load current: 124A
Max. forward impulse current: 0.4kA
товар відсутній
| DPG60B600LB-TRR |
|
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Case: SMPD-B
Kind of package: reel; tape
Max. off-state voltage: 600V
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. forward impulse current: 250A
Max. forward voltage: 2.21V
Load current: 60A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Case: SMPD-B
Kind of package: reel; tape
Max. off-state voltage: 600V
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. forward impulse current: 250A
Max. forward voltage: 2.21V
Load current: 60A
товар відсутній
| DPG60B600LB-TUB |
|
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Case: SMPD-B
Kind of package: tube
Max. off-state voltage: 600V
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. forward impulse current: 250A
Max. forward voltage: 2.21V
Load current: 60A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Case: SMPD-B
Kind of package: tube
Max. off-state voltage: 600V
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. forward impulse current: 250A
Max. forward voltage: 2.21V
Load current: 60A
товар відсутній
| DLA100B1200LB-TRR |
|
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Kind of package: reel; tape
Load current: 124A
Max. forward impulse current: 0.4kA
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.23V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Kind of package: reel; tape
Load current: 124A
Max. forward impulse current: 0.4kA
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.23V
товар відсутній
| DLA100B1200LB-TUB |
|
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Kind of package: tube
Load current: 124A
Max. forward impulse current: 0.4kA
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.23V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Kind of package: tube
Load current: 124A
Max. forward impulse current: 0.4kA
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.23V
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1235.23 грн |
| 3+ | 1084.57 грн |
| 20+ | 1069.33 грн |
| DHG60U1200LB-TRR |
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Case: SMPD-B
Kind of package: reel; tape
Max. forward voltage: 3.15V
Technology: Sonic FRD™
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Case: SMPD-B
Kind of package: reel; tape
Max. forward voltage: 3.15V
Technology: Sonic FRD™
товар відсутній
| DHG60U1200LB-TUB |
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Case: SMPD-B
Kind of package: tube
Max. forward voltage: 3.15V
Technology: Sonic FRD™
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Case: SMPD-B
Kind of package: tube
Max. forward voltage: 3.15V
Technology: Sonic FRD™
товар відсутній
| LDA200S |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
товар відсутній
| LDA200STR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
товар відсутній
| LDA201S |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
товар відсутній
| LDA201STR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
товар відсутній
| LDA202S |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
товар відсутній
| LDA202STR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
товар відсутній
| LDA203S |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
на замовлення 209 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 118.83 грн |
| 5+ | 89.29 грн |
| 17+ | 51.54 грн |
| 46+ | 48.64 грн |
| LDA203STR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
товар відсутній
| IXTH500N04T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO247-3; 84ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 500A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 84ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO247-3; 84ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 500A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 84ns
товар відсутній
| IXFB150N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 150A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 355nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 260ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 150A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 355nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 260ns
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1923.99 грн |
| 2+ | 1689.29 грн |
| IXTP80N12T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 80A
Power dissipation: 325W
Case: TO220AB
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 90ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 80A
Power dissipation: 325W
Case: TO220AB
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 90ns
товар відсутній
| IXTA110N055T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
товар відсутній
| IXTP110N055T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
на замовлення 88 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 124.14 грн |
| 9+ | 98.73 грн |
| 24+ | 92.92 грн |
| IXTK102N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 102A
On-state resistance: 30mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 102A
On-state resistance: 30mΩ
товар відсутній
| VVZB135-16IOXT |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: Inverter
Case: E2-Pack
Power dissipation: 390W
Technology: X2PT
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Gate-emitter voltage: ±20V
Collector current: 84A
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: Inverter
Case: E2-Pack
Power dissipation: 390W
Technology: X2PT
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Gate-emitter voltage: ±20V
Collector current: 84A
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
товар відсутній
| IXTH02N250 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 1.5µs
Drain-source voltage: 2.5kV
Drain current: 0.2A
On-state resistance: 450Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 1.5µs
Drain-source voltage: 2.5kV
Drain current: 0.2A
On-state resistance: 450Ω
товар відсутній
| IXTH02N450HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Case: TO247HV
Mounting: THT
Kind of package: tube
Drain current: 0.2A
Power dissipation: 113W
Polarisation: unipolar
Drain-source voltage: 4.5kV
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Type of transistor: N-MOSFET
Kind of channel: enhanced
On-state resistance: 625Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Case: TO247HV
Mounting: THT
Kind of package: tube
Drain current: 0.2A
Power dissipation: 113W
Polarisation: unipolar
Drain-source voltage: 4.5kV
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Type of transistor: N-MOSFET
Kind of channel: enhanced
On-state resistance: 625Ω
товар відсутній
| IXTH04N300P3HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us
Reverse recovery time: 1.1µs
Drain-source voltage: 3kV
Drain current: 0.4A
On-state resistance: 190Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 13nC
Kind of channel: enhanced
Mounting: THT
Case: TO247HV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us
Reverse recovery time: 1.1µs
Drain-source voltage: 3kV
Drain current: 0.4A
On-state resistance: 190Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 13nC
Kind of channel: enhanced
Mounting: THT
Case: TO247HV
товар відсутній
| IXTH05N250P3HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.5kV; 0.33A; Idm: 1A; 104W
Type of transistor: N-MOSFET
Technology: Polar3™
Polarisation: unipolar
Drain-source voltage: 2.5kV
Drain current: 0.33A
Pulsed drain current: 1A
Power dissipation: 104W
Case: TO247HV
Gate-source voltage: ±20V
On-state resistance: 110Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.2µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.5kV; 0.33A; Idm: 1A; 104W
Type of transistor: N-MOSFET
Technology: Polar3™
Polarisation: unipolar
Drain-source voltage: 2.5kV
Drain current: 0.33A
Pulsed drain current: 1A
Power dissipation: 104W
Case: TO247HV
Gate-source voltage: ±20V
On-state resistance: 110Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.2µs
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 820.88 грн |
| 2+ | 643.19 грн |
| 3+ | 642.47 грн |
| 4+ | 607.62 грн |
| IXTH06N220P3HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A
Type of transistor: N-MOSFET
Technology: Polar3™
Polarisation: unipolar
Drain-source voltage: 2.2kV
Drain current: 0.38A
Pulsed drain current: 1.2A
Power dissipation: 104W
Case: TO247HV
Gate-source voltage: ±20V
On-state resistance: 80Ω
Mounting: THT
Gate charge: 10.4nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.1µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A
Type of transistor: N-MOSFET
Technology: Polar3™
Polarisation: unipolar
Drain-source voltage: 2.2kV
Drain current: 0.38A
Pulsed drain current: 1.2A
Power dissipation: 104W
Case: TO247HV
Gate-source voltage: ±20V
On-state resistance: 80Ω
Mounting: THT
Gate charge: 10.4nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.1µs
товар відсутній
| IXTH10N100D2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 70ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 70ns
товар відсутній
| IXTH10P50P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 414ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 414ns
на замовлення 280 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 538.66 грн |
| 3+ | 340.47 грн |
| 7+ | 321.6 грн |
| IXTH10P60 |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Power dissipation: 300W
Gate charge: 135nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 0.5µs
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Power dissipation: 300W
Gate charge: 135nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 0.5µs
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
товар відсутній
| IXTH11P50 |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 0.5µs
товар відсутній
| IXTH120P065T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
на замовлення 138 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 487.84 грн |
| 3+ | 329.58 грн |
| 8+ | 311.43 грн |
| IXTH130N20T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 830W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 830W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 150ns
товар відсутній
| IXTH140N075L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 200ns
товар відсутній
| IXTH140P05T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 603.54 грн |
| 2+ | 446.46 грн |
| 6+ | 421.78 грн |
| 30+ | 415.24 грн |
| IXTH140P10T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 925.64 грн |
| 3+ | 812.34 грн |
| CPC3708ZTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Kind of channel: depleted
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 2.5W
Type of transistor: N-MOSFET
On-state resistance: 8Ω
Drain current: 0.13A
Drain-source voltage: 350V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Kind of channel: depleted
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 2.5W
Type of transistor: N-MOSFET
On-state resistance: 8Ω
Drain current: 0.13A
Drain-source voltage: 350V
на замовлення 927 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 62.54 грн |
| 11+ | 34.41 грн |
| 25+ | 31.72 грн |
| 35+ | 24.68 грн |
| 94+ | 23.96 грн |