Технічний опис MDMA280UB1600PTED Littelfuse
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw, Type of module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper; NTC thermistor; three-phase diode bridge, Max. off-state voltage: 1.2kV, Collector current: 140A, Case: E2-Pack, Electrical mounting: Press-in PCB, Gate-emitter voltage: ±20V, Pulsed collector current: 300A, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції MDMA280UB1600PTED
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| MDMA280UB1600PTED | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 140A Case: E2-Pack Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 300A Mechanical mounting: screw кількість в упаковці: 1 шт |
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| MDMA280UB1600PTED | Виробник : IXYS | Description: BIPOLARMODULE-RECTIFIER+BRAKE E2 |
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MDMA280UB1600PTED | Виробник : IXYS |
 Discrete Semiconductor Modules BIPOLAR MODULE-RECT+BRAKE |
товар відсутній |
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| MDMA280UB1600PTED | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 140A Case: E2-Pack Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 300A Mechanical mounting: screw |
товар відсутній |