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MCNA120UI2200TED Littelfuse
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Three Phase Rectifier Bridge and Half-Controlled (High-Side) with Brake Unit 22-Pin E2-Pack Box
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Технічний опис MCNA120UI2200TED Littelfuse
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; 190W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Case: E2-Pack, Application: Inverter, Power dissipation: 190W, Type of module: IGBT, Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor, Max. off-state voltage: 1.7kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 80A, Pulsed collector current: 150A, кількість в упаковці: 1 шт.
Інші пропозиції MCNA120UI2200TED
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MCNA120UI2200TED | Виробник : IXYS |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; 190W Electrical mounting: Press-in PCB Mechanical mounting: screw Case: E2-Pack Application: Inverter Power dissipation: 190W Type of module: IGBT Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor Max. off-state voltage: 1.7kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 80A Pulsed collector current: 150A кількість в упаковці: 1 шт |
товар відсутній |
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MCNA120UI2200TED | Виробник : IXYS |
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товар відсутній |
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MCNA120UI2200TED | Виробник : IXYS |
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товар відсутній |
|
MCNA120UI2200TED | Виробник : IXYS |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; 190W Electrical mounting: Press-in PCB Mechanical mounting: screw Case: E2-Pack Application: Inverter Power dissipation: 190W Type of module: IGBT Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor Max. off-state voltage: 1.7kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 80A Pulsed collector current: 150A |
товар відсутній |