IRFHM6342TR2PBF INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.1W; PQFN2X2, Mounting: SMD, Case: PQFN2X2, Power dissipation: 2.1W, Polarisation: unipolar, Type of transistor: N-MOSFET, Drain current: 8.5A, Drain-source voltage: 30V, Features of semiconductor devices: logic level, Gate charge: 11nC, Technology: HEXFET®, Kind of channel: enhanced, Gate-source voltage: ±12V, On-state resistance: 15.5mΩ, кількість в упаковці: 4000 шт.