IGA03N120H2XKSA1

IGA03N120H2XKSA1 Infineon Technologies


iga03n120h2_rev2_2g.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 1200V 3A 29000mW 3-Pin(3+Tab) TO-220FP Tube
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Технічний опис IGA03N120H2XKSA1 Infineon Technologies

Description: IGBT 1200V 3A 29W TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A, Supplier Device Package: PG-TO220-3-31, Td (on/off) @ 25°C: 9.2ns/281ns, Switching Energy: 290µJ, Test Condition: 800V, 3A, 82Ohm, 15V, Gate Charge: 8.6 nC, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 9 A, Power - Max: 29 W.

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IGA03N120H2XKSA1 IGA03N120H2XKSA1 Виробник : INFINEON TECHNOLOGIES IGA03N120H2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8.2A; 29W; TO220FP
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 8.2A
Power dissipation: 29W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Mounting: THT
Gate charge: 8.6nC
Kind of package: tube
Turn-on time: 16.1ns
Turn-off time: 403ns
кількість в упаковці: 1 шт
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IGA03N120H2XKSA1 IGA03N120H2XKSA1 Виробник : Infineon Technologies IGA03N120H2_Rev2_2G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b427a9d73c91 Description: IGBT 1200V 3A 29W TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO220-3-31
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 8.6 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 29 W
товар відсутній
IGA03N120H2XKSA1 Виробник : Infineon Technologies IGA03N120H2_Rev2_2G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b427a9d73c91 IGBT Transistors INDUSTRY 14
товар відсутній
IGA03N120H2XKSA1 IGA03N120H2XKSA1 Виробник : INFINEON TECHNOLOGIES IGA03N120H2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8.2A; 29W; TO220FP
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 8.2A
Power dissipation: 29W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Mounting: THT
Gate charge: 8.6nC
Kind of package: tube
Turn-on time: 16.1ns
Turn-off time: 403ns
товар відсутній