Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136409) > Сторінка 2273 з 2274
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DD600N16KHPSA1 | INFINEON TECHNOLOGIES |
 Category: Diode modulesDescription: Module: diode; double series; 1.6kV; If: 600A; BG-PB60AT-1; screw Max. off-state voltage: 1.6kV Max. forward voltage: 0.75V Load current: 600A Semiconductor structure: double series Case: BG-PB60AT-1 Max. forward impulse current: 22kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
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DD600N18KHPSA1 | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; double series; 1.8kV; If: 600A; BG-PB60AT-1; screw Max. off-state voltage: 1.8kV Max. forward voltage: 0.75V Load current: 600A Semiconductor structure: double series Case: BG-PB60AT-1 Max. forward impulse current: 22kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
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| IPN60R1K5CEATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; Idm: 8.4A; 5W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.2A Pulsed drain current: 8.4A Power dissipation: 5W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of channel: enhanced |
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| IR2175STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; current sensor; SO8; 20mA; 625mW; 9.5÷20VDC; 600V Type of integrated circuit: driver Kind of integrated circuit: current sensor Case: SO8 Output current: 20mA Power: 625mW Supply voltage: 9.5...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V |
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IPD70R1K4CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 3.4A; 53W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.4A Power dissipation: 53W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 10.5nC Kind of channel: enhanced |
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IPB144N12N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO263-3 Case: PG-TO263-3 Polarisation: unipolar On-state resistance: 14.4mΩ Type of transistor: N-MOSFET Power dissipation: 107W Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Drain-source voltage: 120V Drain current: 56A |
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| FP50R06W2E3B11BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A Case: AG-EASY2B-2 Max. off-state voltage: 0.6kV Collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 2B Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 175W |
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IPP77N06S212AKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 158W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 55V Drain current: 56A Power dissipation: 158W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 11.7mΩ Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced |
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| BBY6602VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: varicap; 12V; 50mA; SC79; single diode; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: varicap Features of semiconductor devices: RF Case: SC79 Max. off-state voltage: 12V Load current: 50mA Semiconductor structure: single diode |
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IM818SCCXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; DIP36; 5A; 1.2kV Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Maxi; TRENCHSTOP™ Case: DIP36 Output current: 5A Mounting: THT Kind of package: tube Voltage class: 1.2kV |
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| IKW08N120CS7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 14A; 53W; TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 14A Pulsed collector current: 24A Turn-on time: 31ns Turn-off time: 0.5µs Type of transistor: IGBT Power dissipation: 53W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 52nC Technology: TRENCHSTOP™ Mounting: THT Case: TO247-3 |
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| TLE92108231QXXUMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; motor controller; VQFN48; 100mA; 6÷28V Output current: 0.1A Type of integrated circuit: driver Kind of integrated circuit: motor controller Mounting: SMD Case: VQFN48 Operating voltage: 6...28V |
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| TLE92108232QXXUMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; motor controller; VQFN48; 100mA; 6÷28V Output current: 0.1A Type of integrated circuit: driver Kind of integrated circuit: motor controller Mounting: SMD Case: VQFN48 Operating voltage: 6...28V |
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BAS7002VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 70V; 70mA; SC79; 250mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: single diode Case: SC79 Max. forward impulse current: 0.1A Power dissipation: 0.25W |
на замовлення 2820 шт: термін постачання 21-30 дні (днів) |
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BCR35PNH6327 | INFINEON TECHNOLOGIES |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT363 Polarisation: bipolar Collector current: 0.1A Collector-emitter voltage: 50V Frequency: 150MHz Kind of transistor: BRT; complementary pair Base resistor: 10kΩ Type of transistor: NPN / PNP Base-emitter resistor: 47kΩ Power dissipation: 0.25W |
на замовлення 2090 шт: термін постачання 21-30 дні (днів) |
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IPU80R1K4P7AKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Power dissipation: 32W Case: IPAK Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Gate charge: 10nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 1203 шт: термін постачання 21-30 дні (днів) |
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IPU80R2K0P7AKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.9A Power dissipation: 24W Case: IPAK Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: THT Gate charge: 9nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IPU80R2K4P7AKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 22W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.7A Power dissipation: 22W Case: IPAK Gate-source voltage: ±20V On-state resistance: 2.4Ω Mounting: THT Gate charge: 8nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IPU80R3K3P7AKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 18W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.3A Power dissipation: 18W Case: IPAK Gate-source voltage: ±20V On-state resistance: 3.3Ω Mounting: THT Gate charge: 6nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IPU80R4K5P7AKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1A; Idm: 2.6A; 13W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Pulsed drain current: 2.6A Power dissipation: 13W Case: IPAK Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: THT Gate charge: 4nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 1469 шт: термін постачання 21-30 дні (днів) |
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IPU80R600P7AKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 60W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.5A Power dissipation: 60W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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ITS42008SBDAUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 700mA; Ch: 8; N-Channel; SMD; PG-DSO-36 Type of integrated circuit: power switch Supply voltage: 11...45V DC Number of channels: 8 Mounting: SMD Operating temperature: -40...125°C Case: PG-DSO-36 Kind of integrated circuit: high-side Output current: 0.7A Kind of output: N-Channel Power dissipation: 3.3W Kind of package: reel; tape Technology: Industrial PROFET On-state resistance: 0.2Ω Turn-on time: 150µs Turn-off time: 0.1ms |
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| ITS4200SMENHUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-4 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-4 On-state resistance: 0.16Ω Kind of package: reel; tape Supply voltage: 5...34V DC Technology: Industrial PROFET Operating temperature: -40...125°C |
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| ITS4200SSJDXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.2A; Ch: 1; N-Channel; SMD; PG-DSO-8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.2A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-DSO-8 On-state resistance: 0.15Ω Kind of package: reel; tape Supply voltage: 6...52V DC Technology: Industrial PROFET Operating temperature: -40...125°C |
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ITS428L2 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 5.8A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-5 On-state resistance: 50mΩ Supply voltage: 4.75...43V DC Technology: Industrial PROFET |
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| IAUT300N08S5N011ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 52A Pulsed drain current: 1505A Power dissipation: 375W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 231nC Kind of package: reel; tape Kind of channel: enhanced |
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IDW20G65C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 112W; PG-TO247-3 Case: PG-TO247-3 Mounting: THT Technology: CoolSiC™ 5G; SiC Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 87A Leakage current: 4.1µA Max. off-state voltage: 650V Power dissipation: 112W Kind of package: tube Type of diode: Schottky rectifying Max. forward voltage: 1.8V |
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| AIDW20S65C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 112W; TO247-3 Case: TO247-3 Mounting: THT Application: automotive industry Technology: CoolSiC™ 5G; SiC Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 103A Max. off-state voltage: 650V Power dissipation: 112W Type of diode: Schottky rectifying |
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IRFIZ34NPBF | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 19A; 31W; TO220FP Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 19A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Gate charge: 22.7nC Kind of package: tube Kind of channel: enhanced |
на замовлення 347 шт: термін постачання 21-30 дні (днів) |
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BUZ73A | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 200V; 5.8A; 40W; TO220 Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.8A Power: 40W Case: TO220 On-state resistance: 0.5Ω Mounting: THT |
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IDH06G65C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 54W; PG-TO220-2 Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Power dissipation: 54W Semiconductor structure: single diode Case: PG-TO220-2 Kind of package: tube Heatsink thickness: 1.17...1.37mm Max. forward impulse current: 30A Max. forward voltage: 1.25V Leakage current: 46µA |
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IPB200N25N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 250V Drain current: 64A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of channel: enhanced |
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TLF4277ELXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 5÷12V; 0.2A; SSOP14 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.25V Output voltage: 5...12V Output current: 0.2A Case: SSOP14 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Input voltage: 5...40V |
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IPP65R225C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 63W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.225Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPP50R500CEXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; 57W; PG-TO220-3 Mounting: THT Case: PG-TO220-3 Kind of package: tube Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 500V Drain current: 7.6A On-state resistance: 0.5Ω Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Technology: CoolMOS™ |
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IPP50R520CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.1A Power dissipation: 66W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.52Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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BSZ12DN20NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 200V Drain current: 11.3A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Kind of channel: enhanced |
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IPD95R1K2P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; DPAK Polarisation: unipolar Kind of package: reel Power dissipation: 52W Type of transistor: N-MOSFET On-state resistance: 1.2Ω Drain current: 3.7A Features of semiconductor devices: ESD protected gate Gate charge: 15nC Drain-source voltage: 950V Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Case: DPAK Mounting: SMD |
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IPN95R1K2P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 7W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 950V Drain current: 3.7A Power dissipation: 7W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 15nC Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IPU95R1K2P7AKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 950V Drain current: 3.7A Power dissipation: 52W Case: IPAK Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| IAUC41N06S5L100ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 115A; 42W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 115A Power dissipation: 42W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 13.9mΩ Mounting: SMD Gate charge: 16.4nC Kind of package: reel; tape Kind of channel: enhanced |
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IMW65R072M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W; TO247 Type of transistor: N-MOSFET Technology: CoolSiC™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Pulsed drain current: 69A Power dissipation: 96W Case: TO247 Gate-source voltage: -5...23V On-state resistance: 94mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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| AIDK12S65C5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; PG-TO263-2; 62W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: SMD Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Max. forward voltage: 2.1V Case: PG-TO263-2 Kind of package: reel; tape Leakage current: 14µA Max. forward impulse current: 40A Power dissipation: 62W |
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| IAUC28N08S5L230ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 20A; Idm: 112A; 38W; PG-TDSON-8 Mounting: SMD Drain-source voltage: 80V Drain current: 20A On-state resistance: 23mΩ Type of transistor: N-MOSFET Power dissipation: 38W Polarisation: unipolar Kind of package: reel; tape Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 112A Case: PG-TDSON-8 |
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IDH20G65C5 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 157W; PG-TO220-2 Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Power dissipation: 157W Semiconductor structure: single diode Case: PG-TO220-2 Kind of package: tube Heatsink thickness: 1.17...137mm Max. forward impulse current: 119A Max. forward voltage: 1.8V Leakage current: 4.1µA |
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TT600N16KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 600A; BG-PB60AT-1; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: thyristor Case: BG-PB60AT-1 Max. off-state voltage: 1.6kV Max. forward voltage: 1.27V Load current: 600A Semiconductor structure: double series Gate current: 250mA Max. forward impulse current: 21kA |
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| ITS4090QEPDXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.5A; Ch: 4; N-Channel; SMD; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.5A Number of channels: 4 Kind of output: N-Channel Mounting: SMD Case: PG-TSDSO-14 On-state resistance: 90mΩ Kind of package: reel; tape Supply voltage: 5...45V DC Technology: Industrial PROFET Operating temperature: -40...150°C Power dissipation: 1.8W Turn-on time: 75µs Turn-off time: 75µs |
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IPP80R600P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 60W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.5A Power dissipation: 60W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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TD400N26KOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.6kV; 400A; BG-PB60-1; Ufmax: 1.88V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.6kV Load current: 400A Case: BG-PB60-1 Max. forward voltage: 1.88V Max. forward impulse current: 13kA Gate current: 250mA Electrical mounting: screw Max. load current: 800A Mechanical mounting: screw |
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TD425N18KOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 425A; BG-PB60AT-1; Ufmax: 1.5V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 425A Case: BG-PB60AT-1 Max. forward voltage: 1.5V Max. forward impulse current: 14.5kA Gate current: 250mA Electrical mounting: screw Max. load current: 800A Mechanical mounting: screw |
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| TD430N22KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 430A; BG-PB60AT-1; Ufmax: 1.78V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 430A Case: BG-PB60AT-1 Max. forward voltage: 1.78V Max. forward impulse current: 14kA Gate current: 250mA Electrical mounting: screw Max. load current: 800A Mechanical mounting: screw |
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IRLHS6242TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 10A Power dissipation: 1.98W Case: PQFN2X2 Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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HFA08TB60PBF | INFINEON TECHNOLOGIES |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 14W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Kind of package: tube Case: TO220AC Max. forward voltage: 1.7V Power dissipation: 14W Reverse recovery time: 55ns |
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IRFS3107PBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 370W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 230A Power dissipation: 370W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 160nC Kind of channel: enhanced |
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TT500N16KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 500A Case: BG-PB60AT-1 Max. forward voltage: 1.45V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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TZ500N16KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1 Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.6kV Load current: 500A Case: BG-PB501-1 Max. forward voltage: 1.53V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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TZ500N18KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1 Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.8kV Load current: 500A Case: BG-PB501-1 Max. forward voltage: 1.53V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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TZ600N16KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1 Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.6kV Load current: 600A Case: BG-PB501-1 Max. forward voltage: 1.53V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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IPT60R040S7XTMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 13A; Idm: 207A Mounting: THT On-state resistance: 84mΩ Type of transistor: N-MOSFET Power dissipation: 245W Polarisation: unipolar Technology: CoolMOS™ S7 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 207A Case: TO220 Drain-source voltage: 600V Drain current: 13A |
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IPI60R125CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Power dissipation: 208W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of channel: enhanced |
товар відсутній |
| DD600N16KHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 600A; BG-PB60AT-1; screw
Max. off-state voltage: 1.6kV
Max. forward voltage: 0.75V
Load current: 600A
Semiconductor structure: double series
Case: BG-PB60AT-1
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 600A; BG-PB60AT-1; screw
Max. off-state voltage: 1.6kV
Max. forward voltage: 0.75V
Load current: 600A
Semiconductor structure: double series
Case: BG-PB60AT-1
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
товар відсутній
| DD600N18KHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 600A; BG-PB60AT-1; screw
Max. off-state voltage: 1.8kV
Max. forward voltage: 0.75V
Load current: 600A
Semiconductor structure: double series
Case: BG-PB60AT-1
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 600A; BG-PB60AT-1; screw
Max. off-state voltage: 1.8kV
Max. forward voltage: 0.75V
Load current: 600A
Semiconductor structure: double series
Case: BG-PB60AT-1
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
товар відсутній
| IPN60R1K5CEATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; Idm: 8.4A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.2A
Pulsed drain current: 8.4A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; Idm: 8.4A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.2A
Pulsed drain current: 8.4A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IR2175STRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor; SO8; 20mA; 625mW; 9.5÷20VDC; 600V
Type of integrated circuit: driver
Kind of integrated circuit: current sensor
Case: SO8
Output current: 20mA
Power: 625mW
Supply voltage: 9.5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor; SO8; 20mA; 625mW; 9.5÷20VDC; 600V
Type of integrated circuit: driver
Kind of integrated circuit: current sensor
Case: SO8
Output current: 20mA
Power: 625mW
Supply voltage: 9.5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
товар відсутній
| IPD70R1K4CEAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.4A; 53W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.4A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.4A; 53W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.4A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhanced
товар відсутній
| IPB144N12N3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO263-3
Case: PG-TO263-3
Polarisation: unipolar
On-state resistance: 14.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 107W
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 120V
Drain current: 56A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO263-3
Case: PG-TO263-3
Polarisation: unipolar
On-state resistance: 14.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 107W
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 120V
Drain current: 56A
товар відсутній
| FP50R06W2E3B11BOMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Case: AG-EASY2B-2
Max. off-state voltage: 0.6kV
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 2B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 175W
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Case: AG-EASY2B-2
Max. off-state voltage: 0.6kV
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 2B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 175W
товар відсутній
| IPP77N06S212AKSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 158W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 158W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 158W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 158W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| BBY6602VH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 12V; 50mA; SC79; single diode; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: RF
Case: SC79
Max. off-state voltage: 12V
Load current: 50mA
Semiconductor structure: single diode
Category: Diodes - others
Description: Diode: varicap; 12V; 50mA; SC79; single diode; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: RF
Case: SC79
Max. off-state voltage: 12V
Load current: 50mA
Semiconductor structure: single diode
товар відсутній
| IM818SCCXKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; DIP36; 5A; 1.2kV
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Maxi; TRENCHSTOP™
Case: DIP36
Output current: 5A
Mounting: THT
Kind of package: tube
Voltage class: 1.2kV
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; DIP36; 5A; 1.2kV
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Maxi; TRENCHSTOP™
Case: DIP36
Output current: 5A
Mounting: THT
Kind of package: tube
Voltage class: 1.2kV
товар відсутній
| IKW08N120CS7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 14A; 53W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 14A
Pulsed collector current: 24A
Turn-on time: 31ns
Turn-off time: 0.5µs
Type of transistor: IGBT
Power dissipation: 53W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 52nC
Technology: TRENCHSTOP™
Mounting: THT
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 14A; 53W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 14A
Pulsed collector current: 24A
Turn-on time: 31ns
Turn-off time: 0.5µs
Type of transistor: IGBT
Power dissipation: 53W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 52nC
Technology: TRENCHSTOP™
Mounting: THT
Case: TO247-3
товар відсутній
| TLE92108231QXXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; motor controller; VQFN48; 100mA; 6÷28V
Output current: 0.1A
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Mounting: SMD
Case: VQFN48
Operating voltage: 6...28V
Category: Motor and PWM drivers
Description: IC: driver; motor controller; VQFN48; 100mA; 6÷28V
Output current: 0.1A
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Mounting: SMD
Case: VQFN48
Operating voltage: 6...28V
товар відсутній
| TLE92108232QXXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; motor controller; VQFN48; 100mA; 6÷28V
Output current: 0.1A
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Mounting: SMD
Case: VQFN48
Operating voltage: 6...28V
Category: Motor and PWM drivers
Description: IC: driver; motor controller; VQFN48; 100mA; 6÷28V
Output current: 0.1A
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Mounting: SMD
Case: VQFN48
Operating voltage: 6...28V
товар відсутній
| BAS7002VH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SC79; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Case: SC79
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SC79; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Case: SC79
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
на замовлення 2820 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.32 грн |
| 60+ | 6.24 грн |
| 100+ | 5.59 грн |
| 190+ | 4.49 грн |
| 515+ | 4.25 грн |
| BCR35PNH6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT363
Polarisation: bipolar
Collector current: 0.1A
Collector-emitter voltage: 50V
Frequency: 150MHz
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Type of transistor: NPN / PNP
Base-emitter resistor: 47kΩ
Power dissipation: 0.25W
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT363
Polarisation: bipolar
Collector current: 0.1A
Collector-emitter voltage: 50V
Frequency: 150MHz
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Type of transistor: NPN / PNP
Base-emitter resistor: 47kΩ
Power dissipation: 0.25W
на замовлення 2090 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 21.26 грн |
| 60+ | 6.53 грн |
| 100+ | 5.95 грн |
| 150+ | 5.71 грн |
| 410+ | 5.4 грн |
| IPU80R1K4P7AKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 1203 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 51.6 грн |
| 10+ | 39.35 грн |
| 25+ | 34.48 грн |
| 29+ | 29.91 грн |
| 78+ | 28.31 грн |
| IPU80R2K0P7AKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 390.9 грн |
| IPU80R2K4P7AKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 22W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Power dissipation: 22W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: THT
Gate charge: 8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 22W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Power dissipation: 22W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: THT
Gate charge: 8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IPU80R3K3P7AKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 18W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.3A
Power dissipation: 18W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 6nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 18W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.3A
Power dissipation: 18W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 6nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IPU80R4K5P7AKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; Idm: 2.6A; 13W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Pulsed drain current: 2.6A
Power dissipation: 13W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; Idm: 2.6A; 13W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Pulsed drain current: 2.6A
Power dissipation: 13W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 1469 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 88.34 грн |
| 9+ | 44.86 грн |
| 25+ | 33.97 грн |
| 69+ | 32.09 грн |
| IPU80R600P7AKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 60W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.5A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 60W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.5A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 151.67 грн |
| 5+ | 126.32 грн |
| 7+ | 124.86 грн |
| ITS42008SBDAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 8; N-Channel; SMD; PG-DSO-36
Type of integrated circuit: power switch
Supply voltage: 11...45V DC
Number of channels: 8
Mounting: SMD
Operating temperature: -40...125°C
Case: PG-DSO-36
Kind of integrated circuit: high-side
Output current: 0.7A
Kind of output: N-Channel
Power dissipation: 3.3W
Kind of package: reel; tape
Technology: Industrial PROFET
On-state resistance: 0.2Ω
Turn-on time: 150µs
Turn-off time: 0.1ms
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 8; N-Channel; SMD; PG-DSO-36
Type of integrated circuit: power switch
Supply voltage: 11...45V DC
Number of channels: 8
Mounting: SMD
Operating temperature: -40...125°C
Case: PG-DSO-36
Kind of integrated circuit: high-side
Output current: 0.7A
Kind of output: N-Channel
Power dissipation: 3.3W
Kind of package: reel; tape
Technology: Industrial PROFET
On-state resistance: 0.2Ω
Turn-on time: 150µs
Turn-off time: 0.1ms
товар відсутній
| ITS4200SMENHUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
On-state resistance: 0.16Ω
Kind of package: reel; tape
Supply voltage: 5...34V DC
Technology: Industrial PROFET
Operating temperature: -40...125°C
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
On-state resistance: 0.16Ω
Kind of package: reel; tape
Supply voltage: 5...34V DC
Technology: Industrial PROFET
Operating temperature: -40...125°C
товар відсутній
| ITS4200SSJDXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; N-Channel; SMD; PG-DSO-8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-8
On-state resistance: 0.15Ω
Kind of package: reel; tape
Supply voltage: 6...52V DC
Technology: Industrial PROFET
Operating temperature: -40...125°C
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; N-Channel; SMD; PG-DSO-8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-8
On-state resistance: 0.15Ω
Kind of package: reel; tape
Supply voltage: 6...52V DC
Technology: Industrial PROFET
Operating temperature: -40...125°C
товар відсутній
| ITS428L2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 50mΩ
Supply voltage: 4.75...43V DC
Technology: Industrial PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 50mΩ
Supply voltage: 4.75...43V DC
Technology: Industrial PROFET
товар відсутній
| IAUT300N08S5N011ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 1505A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 1505A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IDW20G65C5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 112W; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Technology: CoolSiC™ 5G; SiC
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 87A
Leakage current: 4.1µA
Max. off-state voltage: 650V
Power dissipation: 112W
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 1.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 112W; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Technology: CoolSiC™ 5G; SiC
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 87A
Leakage current: 4.1µA
Max. off-state voltage: 650V
Power dissipation: 112W
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 1.8V
товар відсутній
| AIDW20S65C5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 112W; TO247-3
Case: TO247-3
Mounting: THT
Application: automotive industry
Technology: CoolSiC™ 5G; SiC
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 103A
Max. off-state voltage: 650V
Power dissipation: 112W
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 112W; TO247-3
Case: TO247-3
Mounting: THT
Application: automotive industry
Technology: CoolSiC™ 5G; SiC
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 103A
Max. off-state voltage: 650V
Power dissipation: 112W
Type of diode: Schottky rectifying
товар відсутній
| IRFIZ34NPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 19A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 19A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 22.7nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 19A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 19A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 22.7nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 347 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.05 грн |
| 10+ | 60.25 грн |
| 17+ | 52.99 грн |
| 45+ | 50.09 грн |
| BUZ73A |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 200V; 5.8A; 40W; TO220
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.8A
Power: 40W
Case: TO220
On-state resistance: 0.5Ω
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 200V; 5.8A; 40W; TO220
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.8A
Power: 40W
Case: TO220
On-state resistance: 0.5Ω
Mounting: THT
товар відсутній
| IDH06G65C6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 54W; PG-TO220-2
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Power dissipation: 54W
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Max. forward impulse current: 30A
Max. forward voltage: 1.25V
Leakage current: 46µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 54W; PG-TO220-2
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Power dissipation: 54W
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Max. forward impulse current: 30A
Max. forward voltage: 1.25V
Leakage current: 46µA
товар відсутній
| IPB200N25N3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| TLF4277ELXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 5÷12V; 0.2A; SSOP14
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 5...12V
Output current: 0.2A
Case: SSOP14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5...40V
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 5÷12V; 0.2A; SSOP14
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 5...12V
Output current: 0.2A
Case: SSOP14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5...40V
товар відсутній
| IPP65R225C7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPP50R500CEXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; 57W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 500V
Drain current: 7.6A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; 57W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 500V
Drain current: 7.6A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: CoolMOS™
товар відсутній
| IPP50R520CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| BSZ12DN20NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11.3A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11.3A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPD95R1K2P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; DPAK
Polarisation: unipolar
Kind of package: reel
Power dissipation: 52W
Type of transistor: N-MOSFET
On-state resistance: 1.2Ω
Drain current: 3.7A
Features of semiconductor devices: ESD protected gate
Gate charge: 15nC
Drain-source voltage: 950V
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; DPAK
Polarisation: unipolar
Kind of package: reel
Power dissipation: 52W
Type of transistor: N-MOSFET
On-state resistance: 1.2Ω
Drain current: 3.7A
Features of semiconductor devices: ESD protected gate
Gate charge: 15nC
Drain-source voltage: 950V
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
Mounting: SMD
товар відсутній
| IPN95R1K2P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IPU95R1K2P7AKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 52W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 52W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IAUC41N06S5L100ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 115A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 115A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 13.9mΩ
Mounting: SMD
Gate charge: 16.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 115A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 115A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 13.9mΩ
Mounting: SMD
Gate charge: 16.4nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IMW65R072M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W; TO247
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 69A
Power dissipation: 96W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W; TO247
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 69A
Power dissipation: 96W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1121.09 грн |
| 2+ | 710.71 грн |
| 3+ | 709.98 грн |
| 4+ | 671.5 грн |
| AIDK12S65C5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; PG-TO263-2; 62W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: PG-TO263-2
Kind of package: reel; tape
Leakage current: 14µA
Max. forward impulse current: 40A
Power dissipation: 62W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; PG-TO263-2; 62W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: PG-TO263-2
Kind of package: reel; tape
Leakage current: 14µA
Max. forward impulse current: 40A
Power dissipation: 62W
товар відсутній
| IAUC28N08S5L230ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; Idm: 112A; 38W; PG-TDSON-8
Mounting: SMD
Drain-source voltage: 80V
Drain current: 20A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: reel; tape
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 112A
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; Idm: 112A; 38W; PG-TDSON-8
Mounting: SMD
Drain-source voltage: 80V
Drain current: 20A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: reel; tape
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 112A
Case: PG-TDSON-8
товар відсутній
| IDH20G65C5 |
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 157W; PG-TO220-2
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Power dissipation: 157W
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Heatsink thickness: 1.17...137mm
Max. forward impulse current: 119A
Max. forward voltage: 1.8V
Leakage current: 4.1µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 157W; PG-TO220-2
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Power dissipation: 157W
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Heatsink thickness: 1.17...137mm
Max. forward impulse current: 119A
Max. forward voltage: 1.8V
Leakage current: 4.1µA
товар відсутній
| TT600N16KOFHPSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 600A; BG-PB60AT-1; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB60AT-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.27V
Load current: 600A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 21kA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 600A; BG-PB60AT-1; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB60AT-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.27V
Load current: 600A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 21kA
товар відсутній
| ITS4090QEPDXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 4; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 90mΩ
Kind of package: reel; tape
Supply voltage: 5...45V DC
Technology: Industrial PROFET
Operating temperature: -40...150°C
Power dissipation: 1.8W
Turn-on time: 75µs
Turn-off time: 75µs
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 4; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 90mΩ
Kind of package: reel; tape
Supply voltage: 5...45V DC
Technology: Industrial PROFET
Operating temperature: -40...150°C
Power dissipation: 1.8W
Turn-on time: 75µs
Turn-off time: 75µs
товар відсутній
| IPP80R600P7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 60W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.5A
Power dissipation: 60W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 60W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.5A
Power dissipation: 60W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| TD400N26KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.6kV; 400A; BG-PB60-1; Ufmax: 1.88V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.6kV
Load current: 400A
Case: BG-PB60-1
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Gate current: 250mA
Electrical mounting: screw
Max. load current: 800A
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.6kV; 400A; BG-PB60-1; Ufmax: 1.88V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.6kV
Load current: 400A
Case: BG-PB60-1
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Gate current: 250mA
Electrical mounting: screw
Max. load current: 800A
Mechanical mounting: screw
товар відсутній
| TD425N18KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 425A; BG-PB60AT-1; Ufmax: 1.5V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 425A
Case: BG-PB60AT-1
Max. forward voltage: 1.5V
Max. forward impulse current: 14.5kA
Gate current: 250mA
Electrical mounting: screw
Max. load current: 800A
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 425A; BG-PB60AT-1; Ufmax: 1.5V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 425A
Case: BG-PB60AT-1
Max. forward voltage: 1.5V
Max. forward impulse current: 14.5kA
Gate current: 250mA
Electrical mounting: screw
Max. load current: 800A
Mechanical mounting: screw
товар відсутній
| TD430N22KOFHPSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 430A; BG-PB60AT-1; Ufmax: 1.78V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 430A
Case: BG-PB60AT-1
Max. forward voltage: 1.78V
Max. forward impulse current: 14kA
Gate current: 250mA
Electrical mounting: screw
Max. load current: 800A
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 430A; BG-PB60AT-1; Ufmax: 1.78V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 430A
Case: BG-PB60AT-1
Max. forward voltage: 1.78V
Max. forward impulse current: 14kA
Gate current: 250mA
Electrical mounting: screw
Max. load current: 800A
Mechanical mounting: screw
товар відсутній
| IRLHS6242TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 1.98W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 1.98W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| HFA08TB60PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 14W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Power dissipation: 14W
Reverse recovery time: 55ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 14W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Power dissipation: 14W
Reverse recovery time: 55ns
товар відсутній
| IRFS3107PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 370W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 160nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 370W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 160nC
Kind of channel: enhanced
товар відсутній
| TT500N16KOFHPSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| TZ500N16KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| TZ500N18KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| TZ600N16KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| IPT60R040S7XTMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 13A; Idm: 207A
Mounting: THT
On-state resistance: 84mΩ
Type of transistor: N-MOSFET
Power dissipation: 245W
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 207A
Case: TO220
Drain-source voltage: 600V
Drain current: 13A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 13A; Idm: 207A
Mounting: THT
On-state resistance: 84mΩ
Type of transistor: N-MOSFET
Power dissipation: 245W
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 207A
Case: TO220
Drain-source voltage: 600V
Drain current: 13A
товар відсутній
| IPI60R125CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
товар відсутній