Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136409) > Сторінка 2272 з 2274
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BSC0911NDATMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 40A Power dissipation: 2.5W Case: PG-TISON-8 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Kind of channel: enhanced |
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| IKW40N120CS7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 56A Power dissipation: 179W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 230nC Kind of package: tube Turn-on time: 45ns Turn-off time: 0.5µs Features of semiconductor devices: integrated anti-parallel diode |
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IR2214SSPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.5W Supply voltage: 10.4...20V DC Mounting: SMD Operating temperature: -40...125°C Turn-on time: 440ns Turn-off time: 440ns Output current: -1.5...1A Type of integrated circuit: driver Number of channels: 2 Power: 1.5W Case: SSOP24 Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 0.6/1.2kV |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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IPP60R600P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 30W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Power dissipation: 30W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 9nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| IMZA65R048M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W Mounting: THT Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Pulsed drain current: 100A Gate-source voltage: -5...23V Case: TO247-4 Drain-source voltage: 650V Drain current: 24A On-state resistance: 63mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Kind of package: tube |
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| IMZA65R072M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W Type of transistor: N-MOSFET Technology: CoolSiC™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Pulsed drain current: 69A Power dissipation: 96W Case: TO247-4 Gate-source voltage: -5...23V On-state resistance: 94mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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IPI50R250CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Power dissipation: 114W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: THT Kind of channel: enhanced |
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IPI60R250CPAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO262-3 Case: PG-TO262-3 Drain-source voltage: 600V Drain current: 12A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Technology: CoolMOS™ CP Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT |
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IPP50R299CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 104W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 104W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.299Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPP60R250CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Power dissipation: 104W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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TD500N18KOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 500A; BG-PB60AT-1; Ufmax: 1.45V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 500A Max. load current: 900A Case: BG-PB60AT-1 Max. forward voltage: 1.45V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: screw Mechanical mounting: screw |
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| BSS131H6327 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.1A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: SMD Kind of channel: enhanced |
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IPL60R385CPAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 83W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.385Ω Mounting: SMD Kind of channel: enhanced |
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IPP114N12N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3 Case: PG-TO220-3 Polarisation: unipolar On-state resistance: 11.4mΩ Type of transistor: N-MOSFET Power dissipation: 136W Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Drain-source voltage: 120V Drain current: 75A |
на замовлення 102 шт: термін постачання 21-30 дні (днів) |
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| IRS2184STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 720ns Turn-off time: 290ns |
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BCX6925H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 20V; 1A; 3W; SOT89 Case: SOT89 Frequency: 100MHz Collector-emitter voltage: 20V Collector current: 1A Type of transistor: PNP Power dissipation: 3W Polarisation: bipolar Mounting: SMD |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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IPB081N06L3G | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 79W; PG-TO263-3 Mounting: SMD Case: PG-TO263-3 On-state resistance: 8.1mΩ Type of transistor: N-MOSFET Power dissipation: 79W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 50A |
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IPI65R310CFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO262-3 Drain-source voltage: 650V Drain current: 11.4A On-state resistance: 0.31Ω Type of transistor: N-MOSFET Power dissipation: 104.2W Polarisation: unipolar Case: PG-TO262-3 Mounting: THT Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
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IPL65R310E6AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 104W; PG-VSON-4 Drain-source voltage: 650V Drain current: 13.1A On-state resistance: 0.31Ω Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Case: PG-VSON-4 Mounting: SMD Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
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IPP65R310CFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 11.4A Power dissipation: 104.2W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.31Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| T830N12TOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 1.5kA; 844A; Igt: 250mA Max. off-state voltage: 1.2kV Load current: 844A Case: BG-T5814K0-1 Max. forward impulse current: 14.5A Gate current: 250mA Mounting: Press-Pack Max. load current: 1.5kA Kind of package: in-tray Features of semiconductor devices: phase controlled thyristor (PCT) Type of thyristor: hockey-puck |
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| IRS2453DSTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: ballast controller; gate driver; high-/low-side Case: SO14 Output current: -260...180mA Power: 1W Number of channels: 4 Supply voltage: 10...16.6V DC Mounting: SMD Operating temperature: -25...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 0.12µs Turn-off time: 50ns |
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TD250N16KOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Case: BG-PB50-1 Max. off-state voltage: 1.6kV Max. load current: 410A Max. forward voltage: 1.5V Load current: 250A Semiconductor structure: double series Gate current: 200mA Max. forward impulse current: 8kA |
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TD250N18KOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Case: BG-PB50-1 Max. off-state voltage: 1.8kV Max. load current: 410A Max. forward voltage: 1.5V Load current: 250A Semiconductor structure: double series Gate current: 200mA Max. forward impulse current: 8kA |
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IPD90R1K2C3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.2A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Kind of channel: enhanced |
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IPD90R1K2C3BTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.2A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Kind of channel: enhanced |
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BTS3256DAUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 7.5A; Ch: 1; N-Channel; SMD; HITFET® Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 7.5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO252-5-11 On-state resistance: 20mΩ Supply voltage: 5.5...30V DC Technology: HITFET® Output voltage: 40V |
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BSF030NE2LQXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 75A; 28W Mounting: SMD Power dissipation: 28W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±25V Case: CanPAK™ SQ; MG-WDSON-2 Drain-source voltage: 25V Drain current: 75A On-state resistance: 3mΩ Type of transistor: N-MOSFET |
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DD700N22KHPSA3 | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 700A; BG-PB60AT-1; screw Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 700A Case: BG-PB60AT-1 Max. forward voltage: 0.78V Max. forward impulse current: 22kA Electrical mounting: screw Mechanical mounting: screw |
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IRGP4068DPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 96A; 330W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 96A Power dissipation: 330W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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IRGP4660DPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 100A; 330W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 100A Power dissipation: 330W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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IPP60R199CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 139W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.199Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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IPP60R520C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8.1A; 66W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.1A Power dissipation: 66W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.52Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPP60R520E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8.1A; 66W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ E6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.1A Power dissipation: 66W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.52Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPP60R600C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 63W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.3A Power dissipation: 63W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPP60R600E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 63W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ E6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.3A Power dissipation: 63W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IR21094STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -250...120mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 750ns Turn-off time: 200ns |
на замовлення 2499 шт: термін постачання 21-30 дні (днів) |
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IRF7853TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.3A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPD26N06S2L35ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 22A; Idm: 120A; 68W; PG-TO252-3 Polarisation: unipolar Kind of package: reel Power dissipation: 68W Type of transistor: N-MOSFET On-state resistance: 35mΩ Drain current: 22A Gate charge: 10nC Drain-source voltage: 55V Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO252-3 Pulsed drain current: 120A Mounting: SMD |
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IRF7607TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.8W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Power dissipation: 1.8W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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| IPD5N25S3430ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 4A; Idm: 20A; 41W Mounting: SMD Drain-source voltage: 250V Drain current: 4A On-state resistance: 0.43Ω Type of transistor: N-MOSFET Power dissipation: 41W Polarisation: unipolar Technology: OptiMOS™ T Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A Case: PG-TO252-3-313 |
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| BBY5302VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: varicap; 6V; 20mA; SC79; single diode; reel,tape Type of diode: varicap Max. off-state voltage: 6V Load current: 20mA Case: SC79 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: RF Kind of package: reel; tape |
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BSZ123N08NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8 Mounting: SMD Type of transistor: N-MOSFET Case: PG-TSDSON-8 Power dissipation: 66W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 40A On-state resistance: 12.3mΩ |
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BCR523E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 100MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ |
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| BCR523UE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.5A; 0.33W; SC74; R1: 1kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SC74 Mounting: SMD Frequency: 100MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ |
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| ND89N12KHPSA1 | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 1.2kV; If: 89A; BG-PB20-1; Ufmax: 1.5V Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 1.2kV Load current: 89A Case: BG-PB20-1 Max. forward voltage: 1.5V Max. forward impulse current: 2.8kA Electrical mounting: screw Mechanical mounting: screw |
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DD285N02KHPSA1 | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; double series; 200V; If: 285A; BG-PB50-1; Ifsm: 8.3kA Type of module: diode Semiconductor structure: double series Max. off-state voltage: 200V Load current: 285A Case: BG-PB50-1 Max. forward voltage: 1.15V Max. forward impulse current: 8.3kA Electrical mounting: screw Mechanical mounting: screw |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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| IR38363MTRPBFAUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7 Type of integrated circuit: PMIC Kind of integrated circuit: POL converter Input voltage: 5.3...16V DC Output voltage: 0.5...14V DC Output current: 15A Frequency: 0.15...1.5MHz Mounting: SMD Case: PQFN5X7 Topology: buck Number of channels: 1 Operating temperature: -40...125°C DC supply current: 50mA Interface: PMBus; SVID Kind of package: reel; tape Supply voltage: 4.5...5.5V |
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| IR38365MTRPBFAUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7 Type of integrated circuit: PMIC Kind of integrated circuit: POL converter Input voltage: 5.3...16V DC Output voltage: 0.5...14V DC Output current: 15A Frequency: 0.15...1.5MHz Mounting: SMD Case: PQFN5X7 Topology: buck Number of channels: 1 Operating temperature: -40...125°C DC supply current: 50mA Interface: I2C; SVID Kind of package: reel; tape Supply voltage: 4.5...5.5V |
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DD435N40K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; double series; 4kV; If: 435A; BG-PB60-1; Ufmax: 0.84V Case: BG-PB60-1 Semiconductor structure: double series Max. off-state voltage: 4kV Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 0.84V Load current: 435A Max. forward impulse current: 14.5kA Type of module: diode |
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DZ435N40K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 4kV; If: 435A; BG-PB501-1; Ufmax: 0.84V Case: BG-PB501-1 Semiconductor structure: single diode Max. off-state voltage: 4kV Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 0.84V Load current: 435A Max. forward impulse current: 14.5kA Type of module: diode |
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| BAR6502VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape Mounting: SMD Case: SC79 Capacitance: 0.5pF Max. off-state voltage: 30V Max. forward voltage: 1V Load current: 0.1A Semiconductor structure: single diode Leakage current: 20nA Kind of package: reel; tape Type of diode: varicap Features of semiconductor devices: PIN; RF |
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IRF7834TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 19A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 19A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IHW30N135R3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 30A; 175W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.35kV Collector current: 30A Power dissipation: 175W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 263nC Kind of package: tube Turn-off time: 510ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
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TT190N18SOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 190A; BG-PB34SB-1; screw Max. forward impulse current: 5.2kA Case: BG-PB34SB-1 Max. off-state voltage: 1.8kV Max. forward voltage: 1.52V Load current: 190A Semiconductor structure: double series Gate current: 145mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: thyristor |
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ISP762T | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8 Case: SO8 Mounting: SMD Technology: Industrial PROFET Supply voltage: 5...34V DC On-state resistance: 70mΩ Output current: 2A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Kind of integrated circuit: high-side |
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TLS820F0ELV33XUMA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SSOP14; SMD Case: SSOP14 Mounting: SMD Kind of package: reel; tape Output voltage: 3.3V Output current: 0.2A Voltage drop: 0.16V Type of integrated circuit: voltage regulator Input voltage: 3...40V Kind of voltage regulator: fixed; LDO; linear Operating temperature: -40...150°C |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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TLS820F0ELV50XUMA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.2A; SSOP14; SMD Case: SSOP14 Mounting: SMD Kind of package: reel; tape Output voltage: 5V Output current: 0.2A Voltage drop: 0.14V Type of integrated circuit: voltage regulator Input voltage: 3...40V Kind of voltage regulator: fixed; LDO; linear Operating temperature: -40...150°C |
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IDH04G65C5 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 48W; PG-TO220-2 Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Power dissipation: 48W Semiconductor structure: single diode Case: PG-TO220-2 Kind of package: tube Heatsink thickness: 1.17...137mm Max. forward impulse current: 35A Max. forward voltage: 1.8V Leakage current: 0.8µA |
товар відсутній |
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IDH04G65C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 45W; PG-TO220-2 Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Power dissipation: 45W Semiconductor structure: single diode Case: PG-TO220-2 Kind of package: tube Heatsink thickness: 1.17...1.37mm Max. forward impulse current: 23A Max. forward voltage: 1.4V Leakage current: 31µA |
товар відсутній |
| BSC0911NDATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IKW40N120CS7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 179W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.5µs
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 179W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.5µs
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IR2214SSPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.5W
Supply voltage: 10.4...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Turn-on time: 440ns
Turn-off time: 440ns
Output current: -1.5...1A
Type of integrated circuit: driver
Number of channels: 2
Power: 1.5W
Case: SSOP24
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 0.6/1.2kV
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.5W
Supply voltage: 10.4...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Turn-on time: 440ns
Turn-off time: 440ns
Output current: -1.5...1A
Type of integrated circuit: driver
Number of channels: 2
Power: 1.5W
Case: SSOP24
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 0.6/1.2kV
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 498.78 грн |
| 3+ | 320.14 грн |
| 8+ | 302.72 грн |
| IPP60R600P7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 30W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 30W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 30W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 30W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IMZA65R048M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Pulsed drain current: 100A
Gate-source voltage: -5...23V
Case: TO247-4
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Pulsed drain current: 100A
Gate-source voltage: -5...23V
Case: TO247-4
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
товар відсутній
| IMZA65R072M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 69A
Power dissipation: 96W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 69A
Power dissipation: 96W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
| IPI50R250CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IPI60R250CPAKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO262-3
Case: PG-TO262-3
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Technology: CoolMOS™ CP
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO262-3
Case: PG-TO262-3
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Technology: CoolMOS™ CP
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
товар відсутній
| IPP50R299CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPP60R250CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| TD500N18KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 500A
Max. load current: 900A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 500A
Max. load current: 900A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| BSS131H6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPL60R385CPAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPP114N12N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3
Case: PG-TO220-3
Polarisation: unipolar
On-state resistance: 11.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Drain-source voltage: 120V
Drain current: 75A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3
Case: PG-TO220-3
Polarisation: unipolar
On-state resistance: 11.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Drain-source voltage: 120V
Drain current: 75A
на замовлення 102 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 146.98 грн |
| 4+ | 117.6 грн |
| 10+ | 94.37 грн |
| 11+ | 82.03 грн |
| 29+ | 77.68 грн |
| IRS2184STRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
товар відсутній
| BCX6925H6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 3W; SOT89
Case: SOT89
Frequency: 100MHz
Collector-emitter voltage: 20V
Collector current: 1A
Type of transistor: PNP
Power dissipation: 3W
Polarisation: bipolar
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 3W; SOT89
Case: SOT89
Frequency: 100MHz
Collector-emitter voltage: 20V
Collector current: 1A
Type of transistor: PNP
Power dissipation: 3W
Polarisation: bipolar
Mounting: SMD
на замовлення 36 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 23.92 грн |
| 25+ | 19.6 грн |
| IPB081N06L3G |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 79W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
On-state resistance: 8.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 79W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 79W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
On-state resistance: 8.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 79W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 50A
товар відсутній
| IPI65R310CFDXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO262-3
Drain-source voltage: 650V
Drain current: 11.4A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Power dissipation: 104.2W
Polarisation: unipolar
Case: PG-TO262-3
Mounting: THT
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO262-3
Drain-source voltage: 650V
Drain current: 11.4A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Power dissipation: 104.2W
Polarisation: unipolar
Case: PG-TO262-3
Mounting: THT
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| IPL65R310E6AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 104W; PG-VSON-4
Drain-source voltage: 650V
Drain current: 13.1A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Case: PG-VSON-4
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 104W; PG-VSON-4
Drain-source voltage: 650V
Drain current: 13.1A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Case: PG-VSON-4
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| IPP65R310CFDXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| T830N12TOFXPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 1.5kA; 844A; Igt: 250mA
Max. off-state voltage: 1.2kV
Load current: 844A
Case: BG-T5814K0-1
Max. forward impulse current: 14.5A
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.5kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 1.5kA; 844A; Igt: 250mA
Max. off-state voltage: 1.2kV
Load current: 844A
Case: BG-T5814K0-1
Max. forward impulse current: 14.5A
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.5kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
товар відсутній
| IRS2453DSTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Case: SO14
Output current: -260...180mA
Power: 1W
Number of channels: 4
Supply voltage: 10...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Case: SO14
Output current: -260...180mA
Power: 1W
Number of channels: 4
Supply voltage: 10...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
товар відсутній
| TD250N16KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.6kV
Max. load current: 410A
Max. forward voltage: 1.5V
Load current: 250A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 8kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.6kV
Max. load current: 410A
Max. forward voltage: 1.5V
Load current: 250A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 8kA
товар відсутній
| TD250N18KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.8kV
Max. load current: 410A
Max. forward voltage: 1.5V
Load current: 250A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 8kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.8kV
Max. load current: 410A
Max. forward voltage: 1.5V
Load current: 250A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 8kA
товар відсутній
| IPD90R1K2C3ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.2A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.2A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPD90R1K2C3BTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.2A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.2A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BTS3256DAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7.5A; Ch: 1; N-Channel; SMD; HITFET®
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 7.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 20mΩ
Supply voltage: 5.5...30V DC
Technology: HITFET®
Output voltage: 40V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7.5A; Ch: 1; N-Channel; SMD; HITFET®
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 7.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 20mΩ
Supply voltage: 5.5...30V DC
Technology: HITFET®
Output voltage: 40V
товар відсутній
| BSF030NE2LQXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 75A; 28W
Mounting: SMD
Power dissipation: 28W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: CanPAK™ SQ; MG-WDSON-2
Drain-source voltage: 25V
Drain current: 75A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 75A; 28W
Mounting: SMD
Power dissipation: 28W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: CanPAK™ SQ; MG-WDSON-2
Drain-source voltage: 25V
Drain current: 75A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
товар відсутній
| DD700N22KHPSA3 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 700A; BG-PB60AT-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 700A
Case: BG-PB60AT-1
Max. forward voltage: 0.78V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 700A; BG-PB60AT-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 700A
Case: BG-PB60AT-1
Max. forward voltage: 0.78V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| IRGP4068DPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 96A; 330W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 96A
Power dissipation: 330W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 96A; 330W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 96A
Power dissipation: 330W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IRGP4660DPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 100A; 330W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 330W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 100A; 330W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 330W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IPP60R199CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 261.12 грн |
| 6+ | 160.44 грн |
| 15+ | 151.72 грн |
| IPP60R520C6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.1A; 66W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.1A
Power dissipation: 66W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.1A; 66W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.1A
Power dissipation: 66W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPP60R520E6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.1A; 66W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.1A
Power dissipation: 66W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.1A; 66W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.1A
Power dissipation: 66W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPP60R600C6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPP60R600E6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IR21094STRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
на замовлення 2499 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 125.09 грн |
| 10+ | 97.28 грн |
| 13+ | 66.79 грн |
| 35+ | 63.16 грн |
| IRF7853TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPD26N06S2L35ATMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 22A; Idm: 120A; 68W; PG-TO252-3
Polarisation: unipolar
Kind of package: reel
Power dissipation: 68W
Type of transistor: N-MOSFET
On-state resistance: 35mΩ
Drain current: 22A
Gate charge: 10nC
Drain-source voltage: 55V
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Pulsed drain current: 120A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 22A; Idm: 120A; 68W; PG-TO252-3
Polarisation: unipolar
Kind of package: reel
Power dissipation: 68W
Type of transistor: N-MOSFET
On-state resistance: 35mΩ
Drain current: 22A
Gate charge: 10nC
Drain-source voltage: 55V
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Pulsed drain current: 120A
Mounting: SMD
товар відсутній
| IRF7607TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.8W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 1.8W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.8W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 1.8W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPD5N25S3430ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 4A; Idm: 20A; 41W
Mounting: SMD
Drain-source voltage: 250V
Drain current: 4A
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Technology: OptiMOS™ T
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Case: PG-TO252-3-313
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 4A; Idm: 20A; 41W
Mounting: SMD
Drain-source voltage: 250V
Drain current: 4A
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Technology: OptiMOS™ T
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Case: PG-TO252-3-313
товар відсутній
| BBY5302VH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SC79; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 6V
Load current: 20mA
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SC79; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 6V
Load current: 20mA
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
товар відсутній
| BSZ123N08NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
Power dissipation: 66W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 40A
On-state resistance: 12.3mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
Power dissipation: 66W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 40A
On-state resistance: 12.3mΩ
товар відсутній
| BCR523E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
товар відсутній
| BCR523UE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.5A; 0.33W; SC74; R1: 1kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 100MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.5A; 0.33W; SC74; R1: 1kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 100MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
товар відсутній
| ND89N12KHPSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 89A; BG-PB20-1; Ufmax: 1.5V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 89A
Case: BG-PB20-1
Max. forward voltage: 1.5V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 89A; BG-PB20-1; Ufmax: 1.5V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 89A
Case: BG-PB20-1
Max. forward voltage: 1.5V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| DD285N02KHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 200V; If: 285A; BG-PB50-1; Ifsm: 8.3kA
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 200V
Load current: 285A
Case: BG-PB50-1
Max. forward voltage: 1.15V
Max. forward impulse current: 8.3kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 200V; If: 285A; BG-PB50-1; Ifsm: 8.3kA
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 200V
Load current: 285A
Case: BG-PB50-1
Max. forward voltage: 1.15V
Max. forward impulse current: 8.3kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 10914.62 грн |
| IR38363MTRPBFAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Input voltage: 5.3...16V DC
Output voltage: 0.5...14V DC
Output current: 15A
Frequency: 0.15...1.5MHz
Mounting: SMD
Case: PQFN5X7
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
DC supply current: 50mA
Interface: PMBus; SVID
Kind of package: reel; tape
Supply voltage: 4.5...5.5V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Input voltage: 5.3...16V DC
Output voltage: 0.5...14V DC
Output current: 15A
Frequency: 0.15...1.5MHz
Mounting: SMD
Case: PQFN5X7
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
DC supply current: 50mA
Interface: PMBus; SVID
Kind of package: reel; tape
Supply voltage: 4.5...5.5V
товар відсутній
| IR38365MTRPBFAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Input voltage: 5.3...16V DC
Output voltage: 0.5...14V DC
Output current: 15A
Frequency: 0.15...1.5MHz
Mounting: SMD
Case: PQFN5X7
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
DC supply current: 50mA
Interface: I2C; SVID
Kind of package: reel; tape
Supply voltage: 4.5...5.5V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Input voltage: 5.3...16V DC
Output voltage: 0.5...14V DC
Output current: 15A
Frequency: 0.15...1.5MHz
Mounting: SMD
Case: PQFN5X7
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
DC supply current: 50mA
Interface: I2C; SVID
Kind of package: reel; tape
Supply voltage: 4.5...5.5V
товар відсутній
| DD435N40K |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 4kV; If: 435A; BG-PB60-1; Ufmax: 0.84V
Case: BG-PB60-1
Semiconductor structure: double series
Max. off-state voltage: 4kV
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.84V
Load current: 435A
Max. forward impulse current: 14.5kA
Type of module: diode
Category: Diode modules
Description: Module: diode; double series; 4kV; If: 435A; BG-PB60-1; Ufmax: 0.84V
Case: BG-PB60-1
Semiconductor structure: double series
Max. off-state voltage: 4kV
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.84V
Load current: 435A
Max. forward impulse current: 14.5kA
Type of module: diode
товар відсутній
| DZ435N40K |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 4kV; If: 435A; BG-PB501-1; Ufmax: 0.84V
Case: BG-PB501-1
Semiconductor structure: single diode
Max. off-state voltage: 4kV
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.84V
Load current: 435A
Max. forward impulse current: 14.5kA
Type of module: diode
Category: Diode modules
Description: Module: diode; single diode; 4kV; If: 435A; BG-PB501-1; Ufmax: 0.84V
Case: BG-PB501-1
Semiconductor structure: single diode
Max. off-state voltage: 4kV
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.84V
Load current: 435A
Max. forward impulse current: 14.5kA
Type of module: diode
товар відсутній
| BAR6502VH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Mounting: SMD
Case: SC79
Capacitance: 0.5pF
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Leakage current: 20nA
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: PIN; RF
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Mounting: SMD
Case: SC79
Capacitance: 0.5pF
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Leakage current: 20nA
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: PIN; RF
товар відсутній
| IRF7834TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 19A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 19A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 19A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 19A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IHW30N135R3FKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 175W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 175W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 263nC
Kind of package: tube
Turn-off time: 510ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 175W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 175W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 263nC
Kind of package: tube
Turn-off time: 510ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
товар відсутній
| TT190N18SOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 190A; BG-PB34SB-1; screw
Max. forward impulse current: 5.2kA
Case: BG-PB34SB-1
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.52V
Load current: 190A
Semiconductor structure: double series
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 190A; BG-PB34SB-1; screw
Max. forward impulse current: 5.2kA
Case: BG-PB34SB-1
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.52V
Load current: 190A
Semiconductor structure: double series
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
товар відсутній
| ISP762T |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
Mounting: SMD
Technology: Industrial PROFET
Supply voltage: 5...34V DC
On-state resistance: 70mΩ
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
Mounting: SMD
Technology: Industrial PROFET
Supply voltage: 5...34V DC
On-state resistance: 70mΩ
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: high-side
товар відсутній
| TLS820F0ELV33XUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SSOP14; SMD
Case: SSOP14
Mounting: SMD
Kind of package: reel; tape
Output voltage: 3.3V
Output current: 0.2A
Voltage drop: 0.16V
Type of integrated circuit: voltage regulator
Input voltage: 3...40V
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...150°C
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SSOP14; SMD
Case: SSOP14
Mounting: SMD
Kind of package: reel; tape
Output voltage: 3.3V
Output current: 0.2A
Voltage drop: 0.16V
Type of integrated circuit: voltage regulator
Input voltage: 3...40V
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...150°C
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.72 грн |
| TLS820F0ELV50XUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.2A; SSOP14; SMD
Case: SSOP14
Mounting: SMD
Kind of package: reel; tape
Output voltage: 5V
Output current: 0.2A
Voltage drop: 0.14V
Type of integrated circuit: voltage regulator
Input voltage: 3...40V
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...150°C
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.2A; SSOP14; SMD
Case: SSOP14
Mounting: SMD
Kind of package: reel; tape
Output voltage: 5V
Output current: 0.2A
Voltage drop: 0.14V
Type of integrated circuit: voltage regulator
Input voltage: 3...40V
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...150°C
товар відсутній
| IDH04G65C5 |
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 48W; PG-TO220-2
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Power dissipation: 48W
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Heatsink thickness: 1.17...137mm
Max. forward impulse current: 35A
Max. forward voltage: 1.8V
Leakage current: 0.8µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 48W; PG-TO220-2
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Power dissipation: 48W
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Heatsink thickness: 1.17...137mm
Max. forward impulse current: 35A
Max. forward voltage: 1.8V
Leakage current: 0.8µA
товар відсутній
| IDH04G65C6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 45W; PG-TO220-2
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Power dissipation: 45W
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Max. forward impulse current: 23A
Max. forward voltage: 1.4V
Leakage current: 31µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 45W; PG-TO220-2
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Power dissipation: 45W
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Max. forward impulse current: 23A
Max. forward voltage: 1.4V
Leakage current: 31µA
товар відсутній