Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (137832) > Сторінка 1235 з 2298
Фото | Назва | Виробник | Інформація |
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IRFSL3206PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 210A Power dissipation: 300W Case: TO262 Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFSL3207ZPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 170A Power dissipation: 300W Case: TO262 Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFSL4010PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262 Mounting: THT Kind of package: tube Technology: HEXFET® Kind of channel: enhanced Case: TO262 Drain-source voltage: 100V Drain current: 180A Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar кількість в упаковці: 1 шт |
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IRFSL4310ZPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262 Technology: HEXFET® Mounting: THT Case: TO262 Kind of package: tube Drain-source voltage: 100V Drain current: 127A Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFSL4410ZPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262 Technology: HEXFET® Mounting: THT Case: TO262 Kind of package: tube Power dissipation: 230W Drain-source voltage: 100V Drain current: 97A Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFSL4510PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 140W; TO262 Mounting: THT Polarisation: unipolar Drain-source voltage: 100V Kind of package: tube Case: TO262 Technology: HEXFET® Kind of channel: enhanced Type of transistor: N-MOSFET Power dissipation: 140W Drain current: 64A кількість в упаковці: 1 шт |
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IRFSL7430PBF | INFINEON TECHNOLOGIES |
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IRFSL7437PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 1kA; 230W; TO262 Kind of package: tube Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.8mΩ Type of transistor: N-MOSFET Power dissipation: 230W Polarisation: unipolar Gate charge: 225nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1kA Mounting: THT Case: TO262 кількість в упаковці: 1 шт |
на замовлення 38 шт: термін постачання 14-21 дні (днів) |
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IRFSL7440PBF | INFINEON TECHNOLOGIES |
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на замовлення 132 шт: термін постачання 14-21 дні (днів) |
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IRFTS8342TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.2A Power dissipation: 2W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2900 шт: термін постачання 14-21 дні (днів) |
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IRFTS9342TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel Polarisation: unipolar Type of transistor: P-MOSFET Drain current: -5.8A Drain-source voltage: -30V Technology: HEXFET® Power dissipation: 2W Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 3755 шт: термін постачання 14-21 дні (днів) |
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IRFU120NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.1A Power dissipation: 39W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: THT Gate charge: 16.7nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 44 шт: термін постачання 14-21 дні (днів) |
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IRFU13N20DPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 14A Power dissipation: 110W Case: IPAK Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFU220NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 5A Power dissipation: 43W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 15nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 162 шт: термін постачання 14-21 дні (днів) |
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IRFU2405PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 56A Power dissipation: 110W Case: IPAK Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Gate charge: 70nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFU3607PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 140W Case: IPAK Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 56nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFU3910PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.115Ω Mounting: THT Gate charge: 29.3nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 113 шт: термін постачання 14-21 дні (днів) |
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IRFU4510PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 63A Power dissipation: 143W Case: IPAK Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 125 шт: термін постачання 14-21 дні (днів) |
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IRFU4615PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 33A Power dissipation: 144W Case: IPAK Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: THT Gate charge: 26nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFU5305PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -28A Power dissipation: 89W Case: IPAK Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2223 шт: термін постачання 14-21 дні (днів) |
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IRFU5505PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; IPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -18A Power dissipation: 57W Case: IPAK Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFU7440PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 140W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 140W Case: IPAK Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFU9024NPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; IPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -11A Power dissipation: 38W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.175Ω Mounting: THT Gate charge: 12.7nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1332 шт: термін постачання 14-21 дні (днів) |
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IRFZ24NPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 17A Power dissipation: 45W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: THT Gate charge: 13.3nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 304 шт: термін постачання 14-21 дні (днів) |
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IRFZ34NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 26A; 56W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 26A Power dissipation: 56W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Gate charge: 22.7nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 528 шт: термін постачання 14-21 дні (днів) |
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IRFZ34NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 29A; 68W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 29A Power dissipation: 68W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFZ44EPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 110W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 48A Power dissipation: 110W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 393 шт: термін постачання 14-21 дні (днів) |
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IRFZ44ESTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 110W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 48A Power dissipation: 110W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFZ44NLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 49A Power dissipation: 110W Case: TO262 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 65 шт: термін постачання 14-21 дні (днів) |
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IRFZ44NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 83W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 49A Power dissipation: 83W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 614 шт: термін постачання 14-21 дні (днів) |
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IRFZ44NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 49A Power dissipation: 110W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFZ44VPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 55A; 115W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 55A Power dissipation: 115W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: THT Gate charge: 44.7nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 101 шт: термін постачання 14-21 дні (днів) |
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IRFZ44VZPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 92W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 40A Power dissipation: 92W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 47 шт: термін постачання 14-21 дні (днів) |
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IRFZ44VZSPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 92W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 40A Power dissipation: 92W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 43nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFZ44ZPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 36A; 80W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 36A Power dissipation: 80W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 13.9mΩ Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 187 шт: термін постачання 14-21 дні (днів) |
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IRFZ44ZSTRRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 36A; 80W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 36A Power dissipation: 80W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 13.9mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFZ46NLPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 53A Power dissipation: 120W Case: TO262 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: THT Gate charge: 48nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 76 шт: термін постачання 14-21 дні (днів) |
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IRFZ46NPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 46A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 124 шт: термін постачання 14-21 дні (днів) |
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IRFZ48NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 94W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 64A Power dissipation: 94W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 544 шт: термін постачання 14-21 дні (днів) |
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IRFZ48NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 140W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 64A Power dissipation: 140W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRG4BC40W-LPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 40A; 160W; TO262 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 160W Case: TO262 Mounting: THT Kind of package: tube кількість в упаковці: 1 шт |
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IRG4BC40W-STRRP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 40A; 160W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 160W Case: D2PAK Mounting: SMD Kind of package: reel кількість в упаковці: 800 шт |
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IRG4IBC10UDPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB; single transistor Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 3.9A Power dissipation: 25W Case: TO220AB Mounting: THT Kind of package: tube Semiconductor structure: single transistor Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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IRG4IBC30WPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB; single transistor Case: TO220AB Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Power dissipation: 45W Type of transistor: IGBT Semiconductor structure: single transistor Collector current: 17A кількість в упаковці: 1 шт |
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IRG4PH20KDPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3 Collector-emitter voltage: 1.2kV Collector current: 11A Type of transistor: IGBT Power dissipation: 60W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Case: TO247-3 кількість в упаковці: 1 шт |
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IRG4PH20KPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3 Collector-emitter voltage: 1.2kV Collector current: 11A Type of transistor: IGBT Power dissipation: 60W Kind of package: tube Mounting: THT Case: TO247-3 кількість в упаковці: 1 шт |
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IRG4PSC71KPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 85A; 350W; SUPER247 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 85A Power dissipation: 350W Case: SUPER247 Mounting: THT Kind of package: tube кількість в упаковці: 1 шт |
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IRG4PSH71KDPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 78A Power dissipation: 350W Case: SUPER247 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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IRG4PSH71UDPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 99A Power dissipation: 350W Case: SUPER247 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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IRG4RC10KDTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 9A; 38W; DPAK Case: DPAK Mounting: SMD Power dissipation: 38W Collector-emitter voltage: 600V Collector current: 9A Type of transistor: IGBT Kind of package: reel Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 2000 шт |
товар відсутній |
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IRG4RC10UDPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK; single transistor Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 8.5A Power dissipation: 38W Case: DPAK Mounting: SMD Semiconductor structure: single transistor Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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IRG7PH35UD-EP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 25A; 70W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 70W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 85nC Kind of package: tube Turn-on time: 45ns Turn-off time: 240ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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IRG7PH44K10D-EPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 70A; 320W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 70A Power dissipation: 320W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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IRGB6B60KDPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: IGBT; 600V; 13A; 90W; TO220AB Case: TO220AB Mounting: THT Collector-emitter voltage: 600V Collector current: 13A Type of transistor: IGBT Power dissipation: 90W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1000 шт |
товар відсутній |
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IRGIB15B60KD1P | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 19A; 52W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 19A Power dissipation: 52W Case: TO220AB Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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IRGIB7B60KDPBF | INFINEON TECHNOLOGIES |
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товар відсутній |
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IRGP30B60KD-EP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 60A; 304W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 304W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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IRGP4066DPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 75A; 454W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 454W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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IRGP4263DPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 90A; 325W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 90A Power dissipation: 325W Case: TO247-3 Mounting: THT Kind of package: tube кількість в упаковці: 1 шт |
товар відсутній |
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IRGS6B60KDPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 13A; 90W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 13A Power dissipation: 90W Case: D2PAK Mounting: SMD Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
IRFSL3206PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFSL3207ZPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFSL4010PBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Mounting: THT
Kind of package: tube
Technology: HEXFET®
Kind of channel: enhanced
Case: TO262
Drain-source voltage: 100V
Drain current: 180A
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Mounting: THT
Kind of package: tube
Technology: HEXFET®
Kind of channel: enhanced
Case: TO262
Drain-source voltage: 100V
Drain current: 180A
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IRFSL4310ZPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262
Technology: HEXFET®
Mounting: THT
Case: TO262
Kind of package: tube
Drain-source voltage: 100V
Drain current: 127A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262
Technology: HEXFET®
Mounting: THT
Case: TO262
Kind of package: tube
Drain-source voltage: 100V
Drain current: 127A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFSL4410ZPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262
Technology: HEXFET®
Mounting: THT
Case: TO262
Kind of package: tube
Power dissipation: 230W
Drain-source voltage: 100V
Drain current: 97A
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262
Technology: HEXFET®
Mounting: THT
Case: TO262
Kind of package: tube
Power dissipation: 230W
Drain-source voltage: 100V
Drain current: 97A
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFSL4510PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 140W; TO262
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 100V
Kind of package: tube
Case: TO262
Technology: HEXFET®
Kind of channel: enhanced
Type of transistor: N-MOSFET
Power dissipation: 140W
Drain current: 64A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 140W; TO262
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 100V
Kind of package: tube
Case: TO262
Technology: HEXFET®
Kind of channel: enhanced
Type of transistor: N-MOSFET
Power dissipation: 140W
Drain current: 64A
кількість в упаковці: 1 шт
товар відсутній
IRFSL7437PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 1kA; 230W; TO262
Kind of package: tube
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Gate charge: 225nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1kA
Mounting: THT
Case: TO262
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 1kA; 230W; TO262
Kind of package: tube
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Gate charge: 225nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1kA
Mounting: THT
Case: TO262
кількість в упаковці: 1 шт
на замовлення 38 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 164.63 грн |
10+ | 101.27 грн |
14+ | 78.19 грн |
37+ | 73.8 грн |
500+ | 72.04 грн |
IRFSL7440PBF |
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Виробник: INFINEON TECHNOLOGIES
IRFSL7440PBF THT N channel transistors
IRFSL7440PBF THT N channel transistors
на замовлення 132 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 93.67 грн |
18+ | 57.11 грн |
50+ | 53.59 грн |
IRFTS8342TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2900 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 35.67 грн |
25+ | 23.72 грн |
59+ | 17.48 грн |
160+ | 16.52 грн |
3000+ | 15.99 грн |
IRFTS9342TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Type of transistor: P-MOSFET
Drain current: -5.8A
Drain-source voltage: -30V
Technology: HEXFET®
Power dissipation: 2W
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Type of transistor: P-MOSFET
Drain current: -5.8A
Drain-source voltage: -30V
Technology: HEXFET®
Power dissipation: 2W
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 3755 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.22 грн |
11+ | 25.64 грн |
50+ | 20.82 грн |
87+ | 11.86 грн |
239+ | 11.25 грн |
9000+ | 10.81 грн |
IRFU120NPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 16.7nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 16.7nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 44 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 69.07 грн |
10+ | 55.93 грн |
29+ | 36.2 грн |
78+ | 34.26 грн |
525+ | 33.47 грн |
IRFU13N20DPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFU220NPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 43W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 43W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 162 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 68.12 грн |
30+ | 36.4 грн |
81+ | 33.12 грн |
IRFU2405PBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 70nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 70nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFU3607PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 56nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 56nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFU3910PBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: THT
Gate charge: 29.3nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: THT
Gate charge: 29.3nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 113 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 96.51 грн |
5+ | 55.38 грн |
10+ | 42.52 грн |
27+ | 38.04 грн |
74+ | 35.93 грн |
IRFU4510PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 143W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 143W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 125 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 109.75 грн |
5+ | 94.89 грн |
15+ | 70.29 грн |
41+ | 65.89 грн |
450+ | 64.14 грн |
IRFU4615PBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 26nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 26nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFU5305PBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2223 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 85.15 грн |
10+ | 70.25 грн |
19+ | 55.35 грн |
51+ | 52.71 грн |
IRFU5505PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; IPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; IPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFU7440PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 140W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 140W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFU9024NPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; IPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 12.7nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; IPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 12.7nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1332 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 65.28 грн |
10+ | 51.55 грн |
38+ | 27.06 грн |
105+ | 25.57 грн |
9000+ | 24.95 грн |
IRFZ24NPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 304 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 42.58 грн |
10+ | 33.12 грн |
43+ | 24.25 грн |
117+ | 22.93 грн |
500+ | 21.96 грн |
IRFZ34NPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 26A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 26A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 22.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 26A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 26A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 22.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 528 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 68.12 грн |
10+ | 57.94 грн |
37+ | 27.76 грн |
102+ | 26.27 грн |
10000+ | 25.3 грн |
IRFZ34NSTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 29A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 29A
Power dissipation: 68W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 29A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 29A
Power dissipation: 68W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFZ44EPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 393 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 80.42 грн |
10+ | 68.97 грн |
21+ | 49.55 грн |
57+ | 46.83 грн |
1000+ | 45.07 грн |
IRFZ44ESTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFZ44NLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 110W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 110W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 65 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 78.46 грн |
10+ | 67.65 грн |
18+ | 57.99 грн |
49+ | 55.35 грн |
IRFZ44NPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 614 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 60.55 грн |
34+ | 32.3 грн |
91+ | 29.34 грн |
IRFZ44NSTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFZ44VPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 55A; 115W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 55A
Power dissipation: 115W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 44.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 55A; 115W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 55A
Power dissipation: 115W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 44.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 101 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 101.24 грн |
10+ | 88.5 грн |
18+ | 57.11 грн |
50+ | 53.59 грн |
1000+ | 51.84 грн |
IRFZ44VZPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 92W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 92W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 47 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 107.86 грн |
10+ | 83.02 грн |
18+ | 59.74 грн |
48+ | 56.23 грн |
IRFZ44VZSPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 92W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 92W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 92W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 92W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFZ44ZPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 36A; 80W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 36A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 36A; 80W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 36A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 187 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 74.75 грн |
10+ | 61.22 грн |
23+ | 44.72 грн |
63+ | 42.26 грн |
500+ | 42 грн |
1000+ | 40.68 грн |
IRFZ44ZSTRRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 36A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 36A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 36A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 36A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFZ46NLPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 76 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 92.15 грн |
10+ | 73.8 грн |
16+ | 64.14 грн |
44+ | 60.62 грн |
IRFZ46NPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 124 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 70.96 грн |
10+ | 56.84 грн |
27+ | 38.66 грн |
73+ | 36.55 грн |
IRFZ48NPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 94W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 94W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 94W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 94W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 544 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 77.58 грн |
10+ | 67.15 грн |
27+ | 38.66 грн |
74+ | 36.02 грн |
10000+ | 35.14 грн |
IRFZ48NSTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRG4BC40W-LPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 160W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 160W
Case: TO262
Mounting: THT
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 160W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 160W
Case: TO262
Mounting: THT
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
IRG4BC40W-STRRP |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 160W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of package: reel
кількість в упаковці: 800 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 160W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of package: reel
кількість в упаковці: 800 шт
товар відсутній
IRG4IBC10UDPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB; single transistor
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3.9A
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Kind of package: tube
Semiconductor structure: single transistor
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB; single transistor
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3.9A
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Kind of package: tube
Semiconductor structure: single transistor
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
IRG4IBC30WPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB; single transistor
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Power dissipation: 45W
Type of transistor: IGBT
Semiconductor structure: single transistor
Collector current: 17A
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB; single transistor
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Power dissipation: 45W
Type of transistor: IGBT
Semiconductor structure: single transistor
Collector current: 17A
кількість в упаковці: 1 шт
товар відсутній
IRG4PH20KDPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Collector-emitter voltage: 1.2kV
Collector current: 11A
Type of transistor: IGBT
Power dissipation: 60W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247-3
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Collector-emitter voltage: 1.2kV
Collector current: 11A
Type of transistor: IGBT
Power dissipation: 60W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247-3
кількість в упаковці: 1 шт
товар відсутній
IRG4PH20KPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Collector-emitter voltage: 1.2kV
Collector current: 11A
Type of transistor: IGBT
Power dissipation: 60W
Kind of package: tube
Mounting: THT
Case: TO247-3
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Collector-emitter voltage: 1.2kV
Collector current: 11A
Type of transistor: IGBT
Power dissipation: 60W
Kind of package: tube
Mounting: THT
Case: TO247-3
кількість в упаковці: 1 шт
товар відсутній
IRG4PSC71KPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 85A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 85A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 85A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 85A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
IRG4PSH71KDPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
IRG4PSH71UDPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 99A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 99A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
IRG4RC10KDTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Case: DPAK
Mounting: SMD
Power dissipation: 38W
Collector-emitter voltage: 600V
Collector current: 9A
Type of transistor: IGBT
Kind of package: reel
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 2000 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Case: DPAK
Mounting: SMD
Power dissipation: 38W
Collector-emitter voltage: 600V
Collector current: 9A
Type of transistor: IGBT
Kind of package: reel
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 2000 шт
товар відсутній
IRG4RC10UDPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK; single transistor
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8.5A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Semiconductor structure: single transistor
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK; single transistor
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8.5A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Semiconductor structure: single transistor
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
IRG7PH35UD-EP |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 70W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 70W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 240ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 70W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 70W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 240ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
IRG7PH44K10D-EPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 70A; 320W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 70A
Power dissipation: 320W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 70A; 320W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 70A
Power dissipation: 320W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
IRGB6B60KDPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; TO220AB
Case: TO220AB
Mounting: THT
Collector-emitter voltage: 600V
Collector current: 13A
Type of transistor: IGBT
Power dissipation: 90W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1000 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; TO220AB
Case: TO220AB
Mounting: THT
Collector-emitter voltage: 600V
Collector current: 13A
Type of transistor: IGBT
Power dissipation: 90W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1000 шт
товар відсутній
IRGIB15B60KD1P |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 52W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 19A
Power dissipation: 52W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 52W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 19A
Power dissipation: 52W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
IRGP30B60KD-EP |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 304W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 304W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 304W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 304W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
IRGP4066DPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 454W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 454W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 454W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 454W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
IRGP4263DPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 90A; 325W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 90A
Power dissipation: 325W
Case: TO247-3
Mounting: THT
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 90A; 325W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 90A
Power dissipation: 325W
Case: TO247-3
Mounting: THT
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
IRGS6B60KDPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній