Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136605) > Сторінка 1231 з 2277
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRLS4030TRLPBF | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 370W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 800 шт |
товар відсутній |
|||||||||||||
 |
IRLTS2242TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.9A Power dissipation: 2W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 3025 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
|
IRLTS6342TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.3A Power dissipation: 2W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 1533 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
 |
IRLU024NPBF | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 17A Power dissipation: 38W Case: IPAK Mounting: THT Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 1004 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
|
IRLU120NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Power dissipation: 48W Case: IPAK Gate-source voltage: ±16V On-state resistance: 0.185Ω Mounting: THT Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 195 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
|
IRLU3110ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 63A Power dissipation: 140W Case: IPAK Gate-source voltage: ±16V On-state resistance: 14mΩ Mounting: THT Gate charge: 34nC Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 155 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
|
IRLU3410PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: IPAK Mounting: THT Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRLU7843PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 161A Power dissipation: 140W Case: IPAK Mounting: THT Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRLU8743PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 160A Power dissipation: 135W Case: IPAK Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: THT Gate charge: 39nC Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
 |
IRLZ24NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 18A; 45W; TO220AB Mounting: THT Power dissipation: 45W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: logic level Gate charge: 10nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±16V Case: TO220AB Drain-source voltage: 55V Drain current: 18A On-state resistance: 60mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
на замовлення 166 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
|
IRLZ24NSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 18A; 45W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 18A Power dissipation: 45W Case: D2PAK Gate-source voltage: ±16V Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 800 шт |
товар відсутній |
|||||||||||||
|
|
IRLZ34NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 27A Power dissipation: 56W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 35mΩ Mounting: THT Gate charge: 16.7nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 14 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
| IRLZ34NSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 21A Pulsed drain current: 110A Power dissipation: 68W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 35mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 800 шт |
товар відсутній |
||||||||||||||
|
|
IRLZ44NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 41A Power dissipation: 83W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 22mΩ Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRLZ44NSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 41A Power dissipation: 83W Case: D2PAK Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 800 шт |
товар відсутній |
|||||||||||||
|
|
IRLZ44ZSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 51A; 80W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 51A Power dissipation: 80W Case: D2PAK Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 800 шт |
товар відсутній |
|||||||||||||
 |
IRMCK099M | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; DMC,3-phase motor controller; iMOTION™; QFN32; 73.5mA Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; DMC Technology: iMOTION™ Interface: I2C; JTAG; UART Case: QFN32 Output current: 73.5mA Integrated circuit features: current monitoring; FOC; internal temperature sensor; MCE; PMSM Mounting: SMD Operating temperature: -40...125°C Operating voltage: 3...3.6V Frequency: 1...20kHz Kind of package: in-tray Clock frequency: 100MHz кількість в упаковці: 2450 шт |
товар відсутній |
|||||||||||||
 |
IRS10752LTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; SOT23-6 Operating temperature: -40...125°C Mounting: SMD Supply voltage: 10...18V DC Output current: -240...160mA Type of integrated circuit: driver Number of channels: 1 Kind of package: reel; tape Kind of integrated circuit: gate driver; high-side Topology: single transistor Voltage class: 100V Case: SOT23-6 Turn-on time: 225ns Turn-off time: 255ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
 |
IRS2003SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 200V Turn-on time: 750ns Turn-off time: 180ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
 |
IRS2003STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 200V Turn-on time: 750ns Turn-off time: 180ns кількість в упаковці: 2500 шт |
товар відсутній |
|||||||||||||
|
|
IRS2005SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 200V Turn-on time: 160ns Turn-off time: 150ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRS2005STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Power: 625mW Mounting: SMD Supply voltage: 10...20V DC Number of channels: 2 Case: SO8 Operating temperature: -40...125°C Kind of package: reel; tape Output current: -600...290mA Topology: MOSFET half-bridge Voltage class: 200V Turn-on time: 160ns Turn-off time: 150ns кількість в упаковці: 2500 шт |
товар відсутній |
|||||||||||||
|
|
IRS2007SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Power: 625mW Mounting: SMD Supply voltage: 10...20V DC Number of channels: 2 Case: SO8 Operating temperature: -40...125°C Kind of package: tube Output current: -600...290mA Topology: MOSFET half-bridge Voltage class: 200V Turn-on time: 160ns Turn-off time: 150ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRS2008SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Supply voltage: 10...20V DC Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Topology: MOSFET half-bridge Case: SO8 Kind of integrated circuit: gate driver; high-/low-side Output current: -600...290mA Kind of package: tube Voltage class: 200V Power: 625mW Turn-on time: 750ns Turn-off time: 180ns кількість в упаковці: 3800 шт |
товар відсутній |
|||||||||||||
 |
IRS2011PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Power: 1W Mounting: THT Supply voltage: 10...20V DC Number of channels: 2 Case: DIP8 Operating temperature: -40...125°C Kind of package: tube Output current: -1...1A Topology: MOSFET half-bridge Voltage class: 200V Turn-on time: 85ns Turn-off time: 75ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRS20752LTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; SOT23-6 Case: SOT23-6 Kind of package: reel; tape Mounting: SMD Turn-off time: 255ns Supply voltage: 10...18V DC Turn-on time: 225ns Operating temperature: -40...125°C Output current: -240...160mA Type of integrated circuit: driver Number of channels: 1 Kind of integrated circuit: gate driver; high-side Topology: single transistor Voltage class: 200V кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
 |
IRS2092STRPBF | INFINEON TECHNOLOGIES |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16 Type of integrated circuit: audio amplifier Frequency: 800kHz Mounting: SMD Supply voltage: 10...18V DC Number of channels: 1 Amplifier class: D Case: SO16 Kind of package: reel; tape кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
| IRS2093MTRPBF | INFINEON TECHNOLOGIES |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48 Type of integrated circuit: audio amplifier Mounting: SMD Supply voltage: 10...15V DC Number of channels: 4 Amplifier class: D Case: MLPQ48 Kind of package: reel; tape кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
 |
IRS20957STRPBF | INFINEON TECHNOLOGIES |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16 Type of integrated circuit: audio amplifier Mounting: SMD Supply voltage: 10...15V DC Number of channels: 1 Amplifier class: D Case: SO16 Kind of package: reel; tape кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRS2101SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 230ns Turn-off time: 185ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRS2103PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Mounting: THT Kind of package: tube Operating temperature: -40...125°C Turn-on time: 750ns Turn-off time: 185ns Output current: -600...290mA Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V Case: DIP8 Power: 1W Supply voltage: 10...20V DC кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRS2103SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Mounting: SMD Kind of package: tube Operating temperature: -40...125°C Turn-on time: 750ns Turn-off time: 185ns Output current: -600...290mA Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V Case: SO8 Power: 625mW Supply voltage: 10...20V DC кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRS2104PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -600...290mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 750ns Turn-off time: 185ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRS2104SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 750ns Turn-off time: 185ns кількість в упаковці: 1 шт |
на замовлення 162 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
 |
IRS21064PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP14 Output current: -600...290mA Power: 1.6W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 320ns Turn-off time: 235ns кількість в упаковці: 1 шт |
на замовлення 51 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
 |
IRS21064SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -600...290mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 320ns Turn-off time: 235ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRS2106PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -600...290mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 320ns Turn-off time: 235ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRS2106SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 320ns Turn-off time: 235ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRS2108PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -600...290mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 320ns Turn-off time: 235ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRS2108SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 320ns Turn-off time: 235ns кількість в упаковці: 1 шт |
на замовлення 8 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
|
IRS21091SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 850ns Turn-off time: 235ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRS21094PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP14 Output current: -600...290mA Power: 1.6W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 850ns Turn-off time: 235ns кількість в упаковці: 1 шт |
на замовлення 132 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
|
IRS21094SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -600...290mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 850ns Turn-off time: 235ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
 |
IRS2110SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16 Output current: -2...2A Power: 1.25W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 500V Turn-on time: 155ns Turn-off time: 137ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRS2113PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Output current: -2...2A Number of channels: 2 Case: DIP14 Mounting: THT Operating temperature: -40...125°C Topology: MOSFET half-bridge Supply voltage: 10...20V DC Kind of package: tube Power: 1.6W Voltage class: 600V Turn-on time: 155ns Turn-off time: 137ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
 |
IRS2113SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16 Output current: -2...2A Power: 1.25W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 155ns Turn-off time: 137ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRS2117SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 1 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 140ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRS2118PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -600...290mA Power: 1W Number of channels: 1 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 140ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRS2118SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 1 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 140ns кількість в упаковці: 95 шт |
товар відсутній |
|||||||||||||
|
|
IRS21271SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: current sensor; high-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 1 Supply voltage: 9...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 190ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRS2153DPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -260...180mA Power: 1W Number of channels: 2 Supply voltage: 10.1...16.8V DC Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.12µs Turn-off time: 50ns кількість в упаковці: 1 шт |
на замовлення 67 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
|
IRS2153DSPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -260...180mA Power: 625mW Number of channels: 2 Supply voltage: 10.1...16.8V DC Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.12µs Turn-off time: 50ns кількість в упаковці: 1 шт |
на замовлення 68 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
|
IRS2168DSTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V Supply voltage: 11.5...16.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Turn-on time: 0.12µs Turn-off time: 50ns Output current: -260...180mA Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller Topology: MOSFET half-bridge Voltage class: 600V Mounting: SMD Case: SO16 Power: 1.4W кількість в упаковці: 2500 шт |
товар відсутній |
|||||||||||||
|
|
IRS21814SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -2.3...1.9A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 220ns Turn-off time: 240ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRS2183SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 220ns Turn-off time: 240ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRS21844PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP14 Output current: -2.3...1.9A Power: 1.6W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 720ns Turn-off time: 290ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRS21844SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Output current: -2.3...1.9A Number of channels: 2 Case: SO14 Mounting: SMD Operating temperature: -40...125°C Topology: MOSFET half-bridge Supply voltage: 10...20V DC Kind of package: tube Power: 1W Voltage class: 600V Turn-on time: 720ns Turn-off time: 290ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRS2184PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -2.3...1.9A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 720ns Turn-off time: 290ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
IRS2184SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 720ns Turn-off time: 290ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
| IRS2184STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 720ns Turn-off time: 290ns кількість в упаковці: 1 шт |
товар відсутній |
| IRLS4030TRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 800 шт
товар відсутній
| IRLTS2242TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 3025 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 27.55 грн |
| 18+ | 15.64 грн |
| 50+ | 13.01 грн |
| 90+ | 11.5 грн |
| 246+ | 10.88 грн |
| 1000+ | 10.52 грн |
| IRLTS6342TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 1533 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 36.77 грн |
| 12+ | 24.07 грн |
| 50+ | 19.97 грн |
| 59+ | 17.65 грн |
| 161+ | 16.67 грн |
| 1000+ | 16.58 грн |
| IRLU024NPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 1004 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 67.2 грн |
| 10+ | 45.45 грн |
| 39+ | 26.92 грн |
| 107+ | 25.49 грн |
| IRLU120NPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 0.185Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 0.185Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 195 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.96 грн |
| 5+ | 58.04 грн |
| 10+ | 44.84 грн |
| 28+ | 37.97 грн |
| 75+ | 37.26 грн |
| 76+ | 35.92 грн |
| IRLU3110ZPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 155 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 140.16 грн |
| 10+ | 114.79 грн |
| 11+ | 101.62 грн |
| 29+ | 96.27 грн |
| 75+ | 92.71 грн |
| IRLU3410PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
| IRLU7843PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
| IRLU8743PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 39nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 39nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 133.44 грн |
| 10+ | 108.31 грн |
| 15+ | 71.31 грн |
| 41+ | 66.86 грн |
| IRLZ24NPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 18A; 45W; TO220AB
Mounting: THT
Power dissipation: 45W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 10nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: TO220AB
Drain-source voltage: 55V
Drain current: 18A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 18A; 45W; TO220AB
Mounting: THT
Power dissipation: 45W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 10nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: TO220AB
Drain-source voltage: 55V
Drain current: 18A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 166 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 69.12 грн |
| 10+ | 57.58 грн |
| 35+ | 30.4 грн |
| 94+ | 28.7 грн |
| IRLZ24NSTRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 18A; 45W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 18A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±16V
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 18A; 45W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 18A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±16V
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 800 шт
товар відсутній
| IRLZ34NPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 14 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 73.92 грн |
| 7+ | 40.55 грн |
| 25+ | 32.54 грн |
| 37+ | 28.44 грн |
| 100+ | 26.92 грн |
| IRLZ34NSTRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
| IRLZ44NPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
| IRLZ44NSTRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 800 шт
товар відсутній
| IRLZ44ZSTRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 51A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 51A
Power dissipation: 80W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 51A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 51A
Power dissipation: 80W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 800 шт
товар відсутній
| IRMCK099M |
|
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; DMC,3-phase motor controller; iMOTION™; QFN32; 73.5mA
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; DMC
Technology: iMOTION™
Interface: I2C; JTAG; UART
Case: QFN32
Output current: 73.5mA
Integrated circuit features: current monitoring; FOC; internal temperature sensor; MCE; PMSM
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 3...3.6V
Frequency: 1...20kHz
Kind of package: in-tray
Clock frequency: 100MHz
кількість в упаковці: 2450 шт
Category: Motor and PWM drivers
Description: IC: driver; DMC,3-phase motor controller; iMOTION™; QFN32; 73.5mA
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; DMC
Technology: iMOTION™
Interface: I2C; JTAG; UART
Case: QFN32
Output current: 73.5mA
Integrated circuit features: current monitoring; FOC; internal temperature sensor; MCE; PMSM
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 3...3.6V
Frequency: 1...20kHz
Kind of package: in-tray
Clock frequency: 100MHz
кількість в упаковці: 2450 шт
товар відсутній
| IRS10752LTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 10...18V DC
Output current: -240...160mA
Type of integrated circuit: driver
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 100V
Case: SOT23-6
Turn-on time: 225ns
Turn-off time: 255ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 10...18V DC
Output current: -240...160mA
Type of integrated circuit: driver
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 100V
Case: SOT23-6
Turn-on time: 225ns
Turn-off time: 255ns
кількість в упаковці: 1 шт
товар відсутній
| IRS2003SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 750ns
Turn-off time: 180ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 750ns
Turn-off time: 180ns
кількість в упаковці: 1 шт
товар відсутній
| IRS2003STRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 200V
Turn-on time: 750ns
Turn-off time: 180ns
кількість в упаковці: 2500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 200V
Turn-on time: 750ns
Turn-off time: 180ns
кількість в упаковці: 2500 шт
товар відсутній
| IRS2005SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
кількість в упаковці: 1 шт
товар відсутній
| IRS2005STRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Power: 625mW
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: -600...290mA
Topology: MOSFET half-bridge
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
кількість в упаковці: 2500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Power: 625mW
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: -600...290mA
Topology: MOSFET half-bridge
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
кількість в упаковці: 2500 шт
товар відсутній
| IRS2007SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Power: 625mW
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Operating temperature: -40...125°C
Kind of package: tube
Output current: -600...290mA
Topology: MOSFET half-bridge
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Power: 625mW
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Operating temperature: -40...125°C
Kind of package: tube
Output current: -600...290mA
Topology: MOSFET half-bridge
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
кількість в упаковці: 1 шт
товар відсутній
| IRS2008SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Supply voltage: 10...20V DC
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Topology: MOSFET half-bridge
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Output current: -600...290mA
Kind of package: tube
Voltage class: 200V
Power: 625mW
Turn-on time: 750ns
Turn-off time: 180ns
кількість в упаковці: 3800 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Supply voltage: 10...20V DC
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Topology: MOSFET half-bridge
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Output current: -600...290mA
Kind of package: tube
Voltage class: 200V
Power: 625mW
Turn-on time: 750ns
Turn-off time: 180ns
кількість в упаковці: 3800 шт
товар відсутній
| IRS2011PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Power: 1W
Mounting: THT
Supply voltage: 10...20V DC
Number of channels: 2
Case: DIP8
Operating temperature: -40...125°C
Kind of package: tube
Output current: -1...1A
Topology: MOSFET half-bridge
Voltage class: 200V
Turn-on time: 85ns
Turn-off time: 75ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Power: 1W
Mounting: THT
Supply voltage: 10...20V DC
Number of channels: 2
Case: DIP8
Operating temperature: -40...125°C
Kind of package: tube
Output current: -1...1A
Topology: MOSFET half-bridge
Voltage class: 200V
Turn-on time: 85ns
Turn-off time: 75ns
кількість в упаковці: 1 шт
товар відсутній
| IRS20752LTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Turn-off time: 255ns
Supply voltage: 10...18V DC
Turn-on time: 225ns
Operating temperature: -40...125°C
Output current: -240...160mA
Type of integrated circuit: driver
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 200V
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Turn-off time: 255ns
Supply voltage: 10...18V DC
Turn-on time: 225ns
Operating temperature: -40...125°C
Output current: -240...160mA
Type of integrated circuit: driver
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 200V
кількість в упаковці: 1 шт
товар відсутній
| IRS2092STRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Frequency: 800kHz
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Frequency: 800kHz
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| IRS2093MTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 4
Amplifier class: D
Case: MLPQ48
Kind of package: reel; tape
кількість в упаковці: 3000 шт
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 4
Amplifier class: D
Case: MLPQ48
Kind of package: reel; tape
кількість в упаковці: 3000 шт
товар відсутній
| IRS20957STRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| IRS2101SPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 230ns
Turn-off time: 185ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 230ns
Turn-off time: 185ns
кількість в упаковці: 1 шт
товар відсутній
| IRS2103PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Turn-on time: 750ns
Turn-off time: 185ns
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Case: DIP8
Power: 1W
Supply voltage: 10...20V DC
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Turn-on time: 750ns
Turn-off time: 185ns
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Case: DIP8
Power: 1W
Supply voltage: 10...20V DC
кількість в упаковці: 1 шт
товар відсутній
| IRS2103SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Turn-on time: 750ns
Turn-off time: 185ns
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Case: SO8
Power: 625mW
Supply voltage: 10...20V DC
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Turn-on time: 750ns
Turn-off time: 185ns
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Case: SO8
Power: 625mW
Supply voltage: 10...20V DC
кількість в упаковці: 1 шт
товар відсутній
| IRS2104PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
кількість в упаковці: 1 шт
товар відсутній
| IRS2104SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
кількість в упаковці: 1 шт
на замовлення 162 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 121.92 грн |
| 5+ | 112.01 грн |
| 13+ | 85.58 грн |
| 34+ | 81.12 грн |
| IRS21064PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
кількість в упаковці: 1 шт
на замовлення 51 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 338.88 грн |
| 3+ | 289.75 грн |
| 5+ | 254.06 грн |
| 10+ | 242.47 грн |
| 12+ | 240.69 грн |
| 25+ | 231.77 грн |
| IRS21064SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
кількість в упаковці: 1 шт
товар відсутній
| IRS2106PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
кількість в упаковці: 1 шт
товар відсутній
| IRS2106SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
кількість в упаковці: 1 шт
товар відсутній
| IRS2108PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
кількість в упаковці: 1 шт
товар відсутній
| IRS2108SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
кількість в упаковці: 1 шт
на замовлення 8 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 215.04 грн |
| 5+ | 184.22 грн |
| 7+ | 153.33 грн |
| 19+ | 145.3 грн |
| IRS21091SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
кількість в упаковці: 1 шт
товар відсутній
| IRS21094PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
кількість в упаковці: 1 шт
на замовлення 132 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 161.28 грн |
| 3+ | 145.34 грн |
| IRS21094SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
кількість в упаковці: 1 шт
товар відсутній
| IRS2110SPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 155ns
Turn-off time: 137ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 155ns
Turn-off time: 137ns
кількість в упаковці: 1 шт
товар відсутній
| IRS2113PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Output current: -2...2A
Number of channels: 2
Case: DIP14
Mounting: THT
Operating temperature: -40...125°C
Topology: MOSFET half-bridge
Supply voltage: 10...20V DC
Kind of package: tube
Power: 1.6W
Voltage class: 600V
Turn-on time: 155ns
Turn-off time: 137ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Output current: -2...2A
Number of channels: 2
Case: DIP14
Mounting: THT
Operating temperature: -40...125°C
Topology: MOSFET half-bridge
Supply voltage: 10...20V DC
Kind of package: tube
Power: 1.6W
Voltage class: 600V
Turn-on time: 155ns
Turn-off time: 137ns
кількість в упаковці: 1 шт
товар відсутній
| IRS2113SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 155ns
Turn-off time: 137ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 155ns
Turn-off time: 137ns
кількість в упаковці: 1 шт
товар відсутній
| IRS2117SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
кількість в упаковці: 1 шт
товар відсутній
| IRS2118PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
кількість в упаковці: 1 шт
товар відсутній
| IRS2118SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
кількість в упаковці: 95 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
кількість в упаковці: 95 шт
товар відсутній
| IRS21271SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current sensor; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 190ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current sensor; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 190ns
кількість в упаковці: 1 шт
товар відсутній
| IRS2153DPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -260...180mA
Power: 1W
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -260...180mA
Power: 1W
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
кількість в упаковці: 1 шт
на замовлення 67 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 194.88 грн |
| 7+ | 162 грн |
| 10+ | 152.43 грн |
| 19+ | 147.09 грн |
| 50+ | 142.63 грн |
| IRS2153DSPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
кількість в упаковці: 1 шт
на замовлення 68 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 197.76 грн |
| 5+ | 168.48 грн |
| 8+ | 139.95 грн |
| 21+ | 131.93 грн |
| IRS2168DSTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V
Supply voltage: 11.5...16.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 0.12µs
Turn-off time: 50ns
Output current: -260...180mA
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Case: SO16
Power: 1.4W
кількість в упаковці: 2500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V
Supply voltage: 11.5...16.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 0.12µs
Turn-off time: 50ns
Output current: -260...180mA
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Case: SO16
Power: 1.4W
кількість в упаковці: 2500 шт
товар відсутній
| IRS21814SPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
кількість в упаковці: 1 шт
товар відсутній
| IRS2183SPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
кількість в упаковці: 1 шт
товар відсутній
| IRS21844PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2.3...1.9A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2.3...1.9A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
кількість в упаковці: 1 шт
товар відсутній
| IRS21844SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Output current: -2.3...1.9A
Number of channels: 2
Case: SO14
Mounting: SMD
Operating temperature: -40...125°C
Topology: MOSFET half-bridge
Supply voltage: 10...20V DC
Kind of package: tube
Power: 1W
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Output current: -2.3...1.9A
Number of channels: 2
Case: SO14
Mounting: SMD
Operating temperature: -40...125°C
Topology: MOSFET half-bridge
Supply voltage: 10...20V DC
Kind of package: tube
Power: 1W
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
кількість в упаковці: 1 шт
товар відсутній
| IRS2184PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
кількість в упаковці: 1 шт
товар відсутній
| IRS2184SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
кількість в упаковці: 1 шт
товар відсутній
| IRS2184STRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
кількість в упаковці: 1 шт
товар відсутній