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IRG4RC10UDPBF INFINEON TECHNOLOGIES
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Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK; single transistor
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8.5A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Semiconductor structure: single transistor
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
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Технічний опис IRG4RC10UDPBF INFINEON TECHNOLOGIES
Description: IGBT 600V 8.5A 38W DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 28 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A, Supplier Device Package: D-Pak, Td (on/off) @ 25°C: 40ns/87ns, Switching Energy: 140µJ (on), 120µJ (off), Test Condition: 480V, 5A, 100Ohm, 15V, Gate Charge: 15 nC, Current - Collector (Ic) (Max): 8.5 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 34 A, Power - Max: 38 W.
Інші пропозиції IRG4RC10UDPBF
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRG4RC10UDPBF | Виробник : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 28 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A Supplier Device Package: D-Pak Td (on/off) @ 25°C: 40ns/87ns Switching Energy: 140µJ (on), 120µJ (off) Test Condition: 480V, 5A, 100Ohm, 15V Gate Charge: 15 nC Current - Collector (Ic) (Max): 8.5 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 34 A Power - Max: 38 W |
товар відсутній |
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![]() |
IRG4RC10UDPBF | Виробник : Infineon Technologies |
![]() |
товар відсутній |
|
![]() |
IRG4RC10UDPBF | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK; single transistor Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 8.5A Power dissipation: 38W Case: DPAK Mounting: SMD Semiconductor structure: single transistor Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |