Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (137832) > Сторінка 1234 з 2298
Фото | Назва | Виробник | Інформація |
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IRFR5305TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -28A Power dissipation: 89W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IRFR5305TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -28A Power dissipation: 89W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 927 шт: термін постачання 14-21 дні (днів) |
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IRFR5410TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -13A Power dissipation: 66W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2740 шт: термін постачання 14-21 дні (днів) |
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IRFR5410TRRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -13A Power dissipation: 66W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 3000 шт |
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IRFR5505TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -18A Power dissipation: 57W Case: DPAK On-state resistance: 0.11Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2000 шт: термін постачання 14-21 дні (днів) |
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IRFR6215TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK Kind of package: reel Drain-source voltage: -150V Drain current: -13A Type of transistor: P-MOSFET Power dissipation: 110W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: DPAK кількість в упаковці: 1 шт |
на замовлення 501 шт: термін постачання 14-21 дні (днів) |
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IRFR7440TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 125A Pulsed drain current: 760A Power dissipation: 140W Case: DPAK Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2000 шт |
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IRFR7446TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 98W; DPAK Power dissipation: 98W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: DPAK Drain-source voltage: 40V Drain current: 56A Type of transistor: N-MOSFET кількість в упаковці: 2000 шт |
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IRFR7540TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 110A Power dissipation: 140W Case: DPAK On-state resistance: 4.8mΩ Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 2000 шт |
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IRFR7546TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 71A; 99W; DPAK Case: DPAK Drain-source voltage: 60V Drain current: 71A On-state resistance: 7.9mΩ Type of transistor: N-MOSFET Power dissipation: 99W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Mounting: SMD кількість в упаковці: 1 шт |
на замовлення 1527 шт: термін постачання 14-21 дні (днів) |
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IRFR812TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 2.3A; Idm: 14.4A; 78W; DPAK Case: DPAK Mounting: SMD Drain-source voltage: 500V Drain current: 2.3A On-state resistance: 2.2Ω Type of transistor: N-MOSFET Power dissipation: 78W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 14.4A кількість в упаковці: 2000 шт |
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IRFR825TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 119W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 500V Drain current: 6A Power dissipation: 119W Case: DPAK Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFR8314TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 127A; 125W; DPAK Mounting: SMD Polarisation: unipolar Drain-source voltage: 30V Drain current: 127A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 125W Kind of package: reel Gate charge: 36nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Case: DPAK кількість в упаковці: 1 шт |
на замовлення 338 шт: термін постачання 14-21 дні (днів) |
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IRFR9024NTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -11A Power dissipation: 38W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 3000 шт |
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IRFR9024NTRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -11A Power dissipation: 38W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 12253 шт: термін постачання 14-21 дні (днів) |
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IRFR9120NTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -6.5A Power dissipation: 39W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 3000 шт |
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IRFR9120NTRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -6.5A Power dissipation: 39W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1667 шт: термін постачання 14-21 дні (днів) |
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IRFR9N20DTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 9.4A; 86W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 9.4A Power dissipation: 86W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 2000 шт |
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IRFS23N20DTRLP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 170W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 17A Power dissipation: 170W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 57nC Kind of package: reel Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFS3004TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 240A; Idm: 1.31kA; 380W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 240A Pulsed drain current: 1.31kA Power dissipation: 380W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 1.75mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFS3006TRL7PP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 293A; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 293A Power dissipation: 375W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFS3006TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 191A; Idm: 1.08kA; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 191A Pulsed drain current: 1.08kA Power dissipation: 375W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFS3107TRL7PP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 260A; 370W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 260A Power dissipation: 370W Case: D2PAK-7 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFS3107TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 370W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 230A Power dissipation: 370W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFS31N20DTRLP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 31A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFS3206TRRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 210A Power dissipation: 300W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFS3207TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 180A; 330W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel Technology: HEXFET® Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Power dissipation: 330W Drain-source voltage: 75V Drain current: 180A кількість в упаковці: 800 шт |
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IRFS3306TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 110A; Idm: 620A; 230W; D2PAK Case: D2PAK Drain-source voltage: 60V Drain current: 110A On-state resistance: 4.2mΩ Type of transistor: N-MOSFET Power dissipation: 230W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 620A Mounting: SMD кількість в упаковці: 1 шт |
на замовлення 602 шт: термін постачання 14-21 дні (днів) |
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IRFS3307ZTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 120A Power dissipation: 230W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFS3607TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 140W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFS3806TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 31A; Idm: 170A; 71W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 31A Pulsed drain current: 170A Power dissipation: 71W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 15.8mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFS38N20DTRLP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 44A Power dissipation: 320W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFS4010TRL7PP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 130A; Idm: 740A; 380W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Pulsed drain current: 740A Power dissipation: 380W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFS4010TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 127A Power dissipation: 375W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 143nC Kind of package: reel Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFS4020TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; D2PAK Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Type of transistor: N-MOSFET Power dissipation: 100W Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: D2PAK кількість в упаковці: 800 шт |
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IRFS4115TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 70A; Idm: 396A; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 70A Pulsed drain current: 396A Power dissipation: 375W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 12.1mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFS4127TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; D2PAK Mounting: SMD Power dissipation: 375W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Case: D2PAK Drain-source voltage: 200V Drain current: 72A Type of transistor: N-MOSFET кількість в упаковці: 800 шт |
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IRFS4227TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 62A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFS4229TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 45A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFS4310TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFS4310ZTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 127A Power dissipation: 250W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFS4321TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK Case: D2PAK Drain-source voltage: 150V Drain current: 83A Type of transistor: N-MOSFET Power dissipation: 330W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Mounting: SMD кількість в упаковці: 1 шт |
на замовлення 419 шт: термін постачання 14-21 дні (днів) |
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IRFS4410TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 96A Power dissipation: 250W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFS4410ZTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 69A Pulsed drain current: 390A Power dissipation: 230W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFS4510TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 250A; 140W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 43A Pulsed drain current: 250A Power dissipation: 140W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 13.9mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFS4610TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 73A Power dissipation: 190W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFS4615TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 33A Power dissipation: 144W Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRFS4620TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 17A; Idm: 100A; 144W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 17A Pulsed drain current: 100A Power dissipation: 144W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 77.5mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 800 шт |
товар відсутній |
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IRFS52N15DTRLP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 60A Power dissipation: 320W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
товар відсутній |
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IRFS52N15DTRRP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 60A Power dissipation: 320W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
товар відсутній |
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IRFS7430TRL7PP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 240A Power dissipation: 375W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 0.55mΩ Mounting: SMD Gate charge: 305nC Kind of channel: enhanced кількість в упаковці: 800 шт |
товар відсутній |
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IRFS7434TRL7PP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 229A; Idm: 1.3kA; 245W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 229A Pulsed drain current: 1.3kA Power dissipation: 245W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 800 шт |
товар відсутній |
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IRFS7437TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 230W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IRFS7440TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 208W Case: D2PAK Mounting: SMD Kind of channel: enhanced кількість в упаковці: 800 шт |
товар відсутній |
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IRFS7530TRL7PP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 240A Power dissipation: 375W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 236nC Kind of channel: enhanced Trade name: StrongIRFET кількість в упаковці: 1 шт |
товар відсутній |
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IRFS7530TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 295A Power dissipation: 375W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 274nC Kind of channel: enhanced Trade name: StrongIRFET кількість в упаковці: 800 шт |
товар відсутній |
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IRFS7534TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; D2PAK; StrongIRFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 195A Power dissipation: 294W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 186nC Kind of channel: enhanced Trade name: StrongIRFET кількість в упаковці: 800 шт |
товар відсутній |
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IRFS7540TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 160W; D2PAK; StrongIRFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 110A Power dissipation: 160W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: SMD Gate charge: 88nC Kind of channel: enhanced Trade name: StrongIRFET кількість в упаковці: 1 шт |
товар відсутній |
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IRFS7730TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 174A; Idm: 984A; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 174A Pulsed drain current: 984A Power dissipation: 375W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 407nC Kind of package: reel Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IRFS7734TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 290W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 130A Power dissipation: 290W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 180nC Kind of package: reel Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
IRFR5305TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFR5305TRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 927 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 68.12 грн |
6+ | 49.82 грн |
25+ | 43.05 грн |
32+ | 32.95 грн |
86+ | 31.19 грн |
IRFR5410TRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2740 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 107.86 грн |
10+ | 86.49 грн |
25+ | 76.08 грн |
30+ | 34.44 грн |
82+ | 32.51 грн |
IRFR5410TRRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR5505TRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2000 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 73.8 грн |
8+ | 37.77 грн |
25+ | 32.07 грн |
36+ | 28.9 грн |
97+ | 27.32 грн |
500+ | 26.88 грн |
IRFR6215TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Kind of package: reel
Drain-source voltage: -150V
Drain current: -13A
Type of transistor: P-MOSFET
Power dissipation: 110W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DPAK
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Kind of package: reel
Drain-source voltage: -150V
Drain current: -13A
Type of transistor: P-MOSFET
Power dissipation: 110W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DPAK
кількість в упаковці: 1 шт
на замовлення 501 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 73.8 грн |
5+ | 58.76 грн |
24+ | 43.93 грн |
65+ | 41.47 грн |
IRFR7440TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 125A
Pulsed drain current: 760A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 125A
Pulsed drain current: 760A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR7446TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 98W; DPAK
Power dissipation: 98W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DPAK
Drain-source voltage: 40V
Drain current: 56A
Type of transistor: N-MOSFET
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 98W; DPAK
Power dissipation: 98W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DPAK
Drain-source voltage: 40V
Drain current: 56A
Type of transistor: N-MOSFET
кількість в упаковці: 2000 шт
товар відсутній
IRFR7540TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 140W
Case: DPAK
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 140W
Case: DPAK
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR7546TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; 99W; DPAK
Case: DPAK
Drain-source voltage: 60V
Drain current: 71A
On-state resistance: 7.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 99W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; 99W; DPAK
Case: DPAK
Drain-source voltage: 60V
Drain current: 71A
On-state resistance: 7.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 99W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
кількість в упаковці: 1 шт
на замовлення 1527 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 70.02 грн |
6+ | 45.8 грн |
25+ | 38.22 грн |
33+ | 31.45 грн |
90+ | 29.7 грн |
IRFR812TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.3A; Idm: 14.4A; 78W; DPAK
Case: DPAK
Mounting: SMD
Drain-source voltage: 500V
Drain current: 2.3A
On-state resistance: 2.2Ω
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 14.4A
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.3A; Idm: 14.4A; 78W; DPAK
Case: DPAK
Mounting: SMD
Drain-source voltage: 500V
Drain current: 2.3A
On-state resistance: 2.2Ω
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 14.4A
кількість в упаковці: 2000 шт
товар відсутній
IRFR825TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 119W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 119W
Case: DPAK
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 119W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 119W
Case: DPAK
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFR8314TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 127A; 125W; DPAK
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 127A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Kind of package: reel
Gate charge: 36nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 127A; 125W; DPAK
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 127A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Kind of package: reel
Gate charge: 36nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
кількість в упаковці: 1 шт
на замовлення 338 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 77.58 грн |
5+ | 66.6 грн |
19+ | 56.23 грн |
51+ | 52.71 грн |
500+ | 50.96 грн |
IRFR9024NTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR9024NTRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 12253 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 70.96 грн |
9+ | 33.57 грн |
25+ | 26.36 грн |
46+ | 22.76 грн |
100+ | 22.58 грн |
125+ | 21.52 грн |
500+ | 21 грн |
IRFR9120NTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR9120NTRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1667 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 70.02 грн |
6+ | 46.8 грн |
10+ | 37.43 грн |
31+ | 34.09 грн |
83+ | 32.24 грн |
500+ | 31.01 грн |
IRFR9N20DTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.4A; 86W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.4A
Power dissipation: 86W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.4A; 86W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.4A
Power dissipation: 86W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFS23N20DTRLP |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 57nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 57nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFS3004TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; Idm: 1.31kA; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Pulsed drain current: 1.31kA
Power dissipation: 380W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; Idm: 1.31kA; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Pulsed drain current: 1.31kA
Power dissipation: 380W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS3006TRL7PP |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 293A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 293A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 293A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 293A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS3006TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 191A; Idm: 1.08kA; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 191A
Pulsed drain current: 1.08kA
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 191A; Idm: 1.08kA; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 191A
Pulsed drain current: 1.08kA
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS3107TRL7PP |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 260A; 370W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 260A
Power dissipation: 370W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 260A; 370W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 260A
Power dissipation: 370W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS3107TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS31N20DTRLP |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS3206TRRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS3207TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 180A; 330W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 330W
Drain-source voltage: 75V
Drain current: 180A
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 180A; 330W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 330W
Drain-source voltage: 75V
Drain current: 180A
кількість в упаковці: 800 шт
товар відсутній
IRFS3306TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; Idm: 620A; 230W; D2PAK
Case: D2PAK
Drain-source voltage: 60V
Drain current: 110A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 620A
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; Idm: 620A; 230W; D2PAK
Case: D2PAK
Drain-source voltage: 60V
Drain current: 110A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 620A
Mounting: SMD
кількість в упаковці: 1 шт
на замовлення 602 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 175.04 грн |
5+ | 152.36 грн |
10+ | 113.34 грн |
25+ | 107.19 грн |
IRFS3307ZTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS3607TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS3806TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 31A; Idm: 170A; 71W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 31A
Pulsed drain current: 170A
Power dissipation: 71W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 31A; Idm: 170A; 71W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 31A
Pulsed drain current: 170A
Power dissipation: 71W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS38N20DTRLP |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS4010TRL7PP |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; Idm: 740A; 380W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 740A
Power dissipation: 380W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; Idm: 740A; 380W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 740A
Power dissipation: 380W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS4010TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFS4020TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; D2PAK
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Type of transistor: N-MOSFET
Power dissipation: 100W
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: D2PAK
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; D2PAK
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Type of transistor: N-MOSFET
Power dissipation: 100W
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: D2PAK
кількість в упаковці: 800 шт
товар відсутній
IRFS4115TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 70A; Idm: 396A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70A
Pulsed drain current: 396A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 70A; Idm: 396A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70A
Pulsed drain current: 396A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS4127TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; D2PAK
Mounting: SMD
Power dissipation: 375W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: D2PAK
Drain-source voltage: 200V
Drain current: 72A
Type of transistor: N-MOSFET
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; D2PAK
Mounting: SMD
Power dissipation: 375W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: D2PAK
Drain-source voltage: 200V
Drain current: 72A
Type of transistor: N-MOSFET
кількість в упаковці: 800 шт
товар відсутній
IRFS4227TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 62A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 62A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS4229TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 45A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 45A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS4310TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS4310ZTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS4321TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK
Case: D2PAK
Drain-source voltage: 150V
Drain current: 83A
Type of transistor: N-MOSFET
Power dissipation: 330W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK
Case: D2PAK
Drain-source voltage: 150V
Drain current: 83A
Type of transistor: N-MOSFET
Power dissipation: 330W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
кількість в упаковці: 1 шт
на замовлення 419 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 187.34 грн |
5+ | 162.4 грн |
9+ | 115.09 грн |
25+ | 108.94 грн |
IRFS4410TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS4410ZTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 69A
Pulsed drain current: 390A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 69A
Pulsed drain current: 390A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS4510TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 250A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 250A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 250A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 250A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS4610TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS4615TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS4620TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; Idm: 100A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Pulsed drain current: 100A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 77.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; Idm: 100A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Pulsed drain current: 100A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 77.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS52N15DTRLP |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS52N15DTRRP |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS7430TRL7PP |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 0.55mΩ
Mounting: SMD
Gate charge: 305nC
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 0.55mΩ
Mounting: SMD
Gate charge: 305nC
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS7434TRL7PP |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 229A; Idm: 1.3kA; 245W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 229A
Pulsed drain current: 1.3kA
Power dissipation: 245W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 229A; Idm: 1.3kA; 245W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 229A
Pulsed drain current: 1.3kA
Power dissipation: 245W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS7437TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFS7440TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 208W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 208W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS7530TRL7PP |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 236nC
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 236nC
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
товар відсутній
IRFS7530TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 274nC
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 274nC
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 800 шт
товар відсутній
IRFS7534TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 186nC
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 186nC
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 800 шт
товар відсутній
IRFS7540TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 160W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 88nC
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 160W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 88nC
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
товар відсутній
IRFS7730TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 174A; Idm: 984A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 174A
Pulsed drain current: 984A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 407nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 174A; Idm: 984A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 174A
Pulsed drain current: 984A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 407nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFS7734TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 290W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 290W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній