IRG7PH35UD-EP International Rectifier
на замовлення 4605 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 325.49 грн |
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Технічний опис IRG7PH35UD-EP International Rectifier
Description: IGBT 1200V 50A COPAK247, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 105 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A, Supplier Device Package: TO-247AD, IGBT Type: Trench, Td (on/off) @ 25°C: 30ns/160ns, Switching Energy: 1.06mJ (on), 620µJ (off), Test Condition: 600V, 20A, 10Ohm, 15V, Gate Charge: 85 nC, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 180 W.
Інші пропозиції IRG7PH35UD-EP за ціною від 325.49 грн до 325.49 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
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IRG7PH35UD-EP | Виробник : Infineon Technologies |
 Description: IGBT 1200V 50A COPAK247Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: TO-247AD IGBT Type: Trench Td (on/off) @ 25°C: 30ns/160ns Switching Energy: 1.06mJ (on), 620µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 85 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 180 W |
на замовлення 436 шт: термін постачання 21-31 дні (днів) |
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IRG7PH35UD-EP | Виробник : Infineon Technologies |
Trans IGBT Chip N-CH 1200V 50A 180000mW 3-Pin(3+Tab) TO-247AD Tube |
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IRG7PH35UD-EP | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 70W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 70W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 85nC Kind of package: tube Turn-on time: 45ns Turn-off time: 240ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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IRG7PH35UD-EP | Виробник : Infineon Technologies |
Description: IGBT 1200V 50A COPAK247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: TO-247AD IGBT Type: Trench Td (on/off) @ 25°C: 30ns/160ns Switching Energy: 1.06mJ (on), 620µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 85 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 180 W |
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IRG7PH35UD-EP | Виробник : Infineon Technologies |
IGBTs INDUSTRY 59 |
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IRG7PH35UD-EP | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 70W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 70W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 85nC Kind of package: tube Turn-on time: 45ns Turn-off time: 240ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |