Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (139451) > Сторінка 1239 з 2325
Фото | Назва | Виробник | Інформація |
Доступність |
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IRFB4620PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 25A Power dissipation: 144W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 72.5mΩ Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 468 шт: термін постачання 14-21 дні (днів) |
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IRFB4710PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IRFB52N15DPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 60A Power dissipation: 320W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 32mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 45 шт: термін постачання 14-21 дні (днів) |
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IRFB5615PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 35A Power dissipation: 144W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 300 шт: термін постачання 14-21 дні (днів) |
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IRFB5620PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 25A Power dissipation: 144W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 72.5mΩ Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 266 шт: термін постачання 14-21 дні (днів) |
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IRFB7430PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 409A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: THT Gate charge: 300nC Kind of package: tube Kind of channel: enhanced Trade name: StrongIRFET кількість в упаковці: 1 шт |
на замовлення 213 шт: термін постачання 14-21 дні (днів) |
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IRFB7434PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 317A; 294W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 317A Power dissipation: 294W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: THT Gate charge: 216nC Kind of package: tube Kind of channel: enhanced Trade name: StrongIRFET кількість в упаковці: 1 шт |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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IRFB7437PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 250A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Trade name: StrongIRFET кількість в упаковці: 1 шт |
на замовлення 170 шт: термін постачання 14-21 дні (днів) |
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IRFB7440PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 208A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced Trade name: StrongIRFET кількість в упаковці: 1 шт |
на замовлення 81 шт: термін постачання 14-21 дні (днів) |
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IRFB7446PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 123A Power dissipation: 99W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhanced Trade name: StrongIRFET кількість в упаковці: 1 шт |
на замовлення 946 шт: термін постачання 14-21 дні (днів) |
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IRFB7530PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 295A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Gate charge: 274nC Kind of package: tube Kind of channel: enhanced Trade name: StrongIRFET кількість в упаковці: 1 шт |
на замовлення 102 шт: термін постачання 14-21 дні (днів) |
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IRFB7534PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 195A Power dissipation: 294W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Gate charge: 186nC Kind of package: tube Kind of channel: enhanced Trade name: StrongIRFET кількість в упаковці: 1 шт |
на замовлення 20 шт: термін постачання 14-21 дні (днів) |
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IRFB7537PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 173A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: THT Gate charge: 142nC Kind of package: tube Kind of channel: enhanced Trade name: StrongIRFET кількість в упаковці: 1 шт |
на замовлення 18 шт: термін постачання 14-21 дні (днів) |
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IRFB7540PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 160W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 33 шт: термін постачання 14-21 дні (днів) |
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IRFB7545PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 95A; 125W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 95A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhanced Trade name: StrongIRFET кількість в упаковці: 1 шт |
на замовлення 221 шт: термін постачання 14-21 дні (днів) |
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IRFB7546PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 99W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 75A Power dissipation: 99W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7.3mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1343 шт: термін постачання 14-21 дні (днів) |
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IRFB7730PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 246A Power dissipation: 375W Case: TO220AB On-state resistance: 2.2mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 294 шт: термін постачання 14-21 дні (днів) |
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IRFB7734PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 183A Power dissipation: 290W Case: TO220AB On-state resistance: 2.8mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFH3702TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 2.8W; PQFN3X3 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 42A Power dissipation: 2.8W Case: PQFN3X3 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH4210DTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 255A; 3.5W; PQFN5X6; FastIRFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 255A Power dissipation: 3.5W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced Trade name: FastIRFET кількість в упаковці: 4000 шт |
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IRFH4234TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 22A; 3.5W; PQFN5X6; FastIRFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 22A Power dissipation: 3.5W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced Trade name: FastIRFET кількість в упаковці: 1 шт |
на замовлення 1664 шт: термін постачання 14-21 дні (днів) |
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IRFH4251DTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 31W; PQFN5X6; FastIRFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 45A Power dissipation: 31W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced Trade name: FastIRFET кількість в упаковці: 4000 шт |
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IRFH5004TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 28A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 28A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH5006TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 250W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Power dissipation: 250W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH5007TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 250W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 17A Power dissipation: 250W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH5010TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 250W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Power dissipation: 250W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH5015TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 10A; 250W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 10A Power dissipation: 250W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH5020TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.1A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.1A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH5025TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 3.8A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 3.8A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH5053TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.3A; 3.1W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.3A Power dissipation: 3.1W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH5110TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH5210TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH5215TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 5A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 5A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH5250DTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 40A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH5250TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 45A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH5300TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH5301TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH5302DTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 29A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH5302TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH5304TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH5406TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH6200TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 45A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH7004TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 1247A; 156W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 164A Pulsed drain current: 1247A Power dissipation: 156W Case: PQFN5X6 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH7084TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH7110TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRFH7440TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 85A Power dissipation: 104W Case: PQFN5X6 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 92nC Kind of package: reel Kind of channel: enhanced Trade name: StrongIRFET кількість в упаковці: 1 шт |
на замовлення 3619 шт: термін постачання 14-21 дні (днів) |
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IRFH7446TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6 Case: PQFN5X6 Mounting: SMD Power dissipation: 78W Drain-source voltage: 40V Drain current: 117A On-state resistance: 3.3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel Gate charge: 65nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Trade name: StrongIRFET кількість в упаковці: 1 шт |
товар відсутній |
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IRFH7545TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 54A; Idm: 340A; 83W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 54A Pulsed drain current: 340A Power dissipation: 83W Case: PQFN5X6 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 4000 шт |
товар відсутній |
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IRFH7914TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 3.1W; PQFN5X6 Mounting: SMD Drain-source voltage: 30V Drain current: 15A Type of transistor: N-MOSFET Power dissipation: 3.1W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Case: PQFN5X6 кількість в упаковці: 4000 шт |
товар відсутній |
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IRFH7921TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 3.1W; PQFN8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 34A Power dissipation: 3.1W Case: PQFN8 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
товар відсутній |
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IRFH7934TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 3.1W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Power dissipation: 3.1W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
товар відсутній |
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IRFH8201TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 324A; 156W; PQFN5X6 Mounting: SMD Case: PQFN5X6 Kind of package: reel Power dissipation: 156W Drain current: 324A Type of transistor: N-MOSFET Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Drain-source voltage: 25V кількість в упаковці: 4000 шт |
товар відсутній |
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IRFH8303TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 280A; 156W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 280A Power dissipation: 156W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
товар відсутній |
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IRFH8307TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6 Mounting: SMD Drain-source voltage: 30V Drain current: 42A Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Case: PQFN5X6 кількість в упаковці: 4000 шт |
товар відсутній |
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IRFH8311TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IRFH8316TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 27A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 27A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IRFH8321TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 3.4W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IRFH8324TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 23A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 23A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
товар відсутній |
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IRFH8325TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
товар відсутній |
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IRFH8330TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17A; 3.3W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 17A Power dissipation: 3.3W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
товар відсутній |
IRFB4620PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 468 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 229.5 грн |
3+ | 202.62 грн |
7+ | 151.96 грн |
20+ | 143.87 грн |
50+ | 139.37 грн |
IRFB4710PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFB52N15DPBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 45 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 197.54 грн |
9+ | 129.79 грн |
24+ | 117.79 грн |
500+ | 115.09 грн |
1000+ | 113.3 грн |
IRFB5615PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 300 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 129.76 грн |
10+ | 93.38 грн |
17+ | 65.64 грн |
45+ | 62.04 грн |
IRFB5620PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 266 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 203.35 грн |
9+ | 122.32 грн |
25+ | 111.5 грн |
500+ | 107 грн |
IRFB7430PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 409A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 409A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
на замовлення 213 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 321.49 грн |
3+ | 278.26 грн |
6+ | 205.01 грн |
15+ | 194.22 грн |
IRFB7434PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 317A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 317A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 216nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 317A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 317A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 216nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
на замовлення 100 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 143.31 грн |
10+ | 114.85 грн |
11+ | 101.61 грн |
29+ | 96.21 грн |
100+ | 92.61 грн |
IRFB7437PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
на замовлення 170 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 100.71 грн |
4+ | 88.71 грн |
10+ | 74.63 грн |
17+ | 63.84 грн |
45+ | 61.14 грн |
IRFB7440PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 208A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 208A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
на замовлення 81 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 122.98 грн |
10+ | 74.7 грн |
18+ | 58.45 грн |
50+ | 55.75 грн |
1000+ | 53.05 грн |
IRFB7446PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 123A
Power dissipation: 99W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 123A
Power dissipation: 99W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
на замовлення 946 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 113.3 грн |
10+ | 93.38 грн |
19+ | 55.75 грн |
52+ | 53.05 грн |
1000+ | 52.15 грн |
2000+ | 50.35 грн |
IRFB7530PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 274nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 274nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
на замовлення 102 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 191.73 грн |
9+ | 126.99 грн |
24+ | 115.99 грн |
IRFB7534PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 186nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 186nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
на замовлення 20 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 138.47 грн |
10+ | 98.04 грн |
12+ | 89.92 грн |
32+ | 85.42 грн |
500+ | 81.82 грн |
IRFB7537PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
на замовлення 18 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 97.11 грн |
10+ | 87.22 грн |
15+ | 71.93 грн |
41+ | 68.34 грн |
500+ | 65.64 грн |
IRFB7540PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 33 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 85.21 грн |
10+ | 72.46 грн |
23+ | 46.94 грн |
62+ | 44.42 грн |
IRFB7545PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 95A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 95A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 95A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 95A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
на замовлення 221 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 49.38 грн |
10+ | 41.08 грн |
34+ | 31.47 грн |
93+ | 29.67 грн |
500+ | 28.59 грн |
IRFB7546PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 99W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 99W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 99W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 99W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1343 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 98.77 грн |
4+ | 76.57 грн |
10+ | 61.14 грн |
20+ | 53.05 грн |
55+ | 50.35 грн |
IRFB7730PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 246A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 246A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 294 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 308.9 грн |
3+ | 267.99 грн |
6+ | 205.91 грн |
15+ | 195.12 грн |
IRFB7734PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 183A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 183A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFH3702TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 2.8W; PQFN3X3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 2.8W
Case: PQFN3X3
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 2.8W; PQFN3X3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 2.8W
Case: PQFN3X3
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH4210DTRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 255A; 3.5W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 255A
Power dissipation: 3.5W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Trade name: FastIRFET
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 255A; 3.5W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 255A
Power dissipation: 3.5W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Trade name: FastIRFET
кількість в упаковці: 4000 шт
товар відсутній
IRFH4234TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 22A; 3.5W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 22A
Power dissipation: 3.5W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Trade name: FastIRFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 22A; 3.5W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 22A
Power dissipation: 3.5W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Trade name: FastIRFET
кількість в упаковці: 1 шт
на замовлення 1664 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 20.34 грн |
IRFH4251DTRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 31W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 31W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Trade name: FastIRFET
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 31W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 31W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Trade name: FastIRFET
кількість в упаковці: 4000 шт
товар відсутній
IRFH5004TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 28A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 28A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH5006TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH5007TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 17A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 17A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH5010TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH5015TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH5020TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.1A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.1A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.1A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.1A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH5025TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3.8A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3.8A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3.8A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3.8A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH5053TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.3A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.3A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.3A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.3A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH5110TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH5210TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH5215TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH5250DTRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH5250TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH5300TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH5301TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH5302DTRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 29A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 29A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH5302TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH5304TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH5406TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH6200TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH7004TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 1247A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 164A
Pulsed drain current: 1247A
Power dissipation: 156W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 1247A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 164A
Pulsed drain current: 1247A
Power dissipation: 156W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH7084TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH7110TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH7440TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 85A
Power dissipation: 104W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 85A
Power dissipation: 104W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel
Kind of channel: enhanced
Trade name: StrongIRFET
кількість в упаковці: 1 шт
на замовлення 3619 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 121.04 грн |
5+ | 103.65 грн |
13+ | 86.32 грн |
34+ | 81.82 грн |
IRFH7446TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6
Case: PQFN5X6
Mounting: SMD
Power dissipation: 78W
Drain-source voltage: 40V
Drain current: 117A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel
Gate charge: 65nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Trade name: StrongIRFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6
Case: PQFN5X6
Mounting: SMD
Power dissipation: 78W
Drain-source voltage: 40V
Drain current: 117A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel
Gate charge: 65nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Trade name: StrongIRFET
кількість в упаковці: 1 шт
товар відсутній
IRFH7545TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 54A; Idm: 340A; 83W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 54A
Pulsed drain current: 340A
Power dissipation: 83W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 54A; Idm: 340A; 83W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 54A
Pulsed drain current: 340A
Power dissipation: 83W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH7914TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 3.1W; PQFN5X6
Mounting: SMD
Drain-source voltage: 30V
Drain current: 15A
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN5X6
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 3.1W; PQFN5X6
Mounting: SMD
Drain-source voltage: 30V
Drain current: 15A
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN5X6
кількість в упаковці: 4000 шт
товар відсутній
IRFH7921TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 3.1W; PQFN8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 34A
Power dissipation: 3.1W
Case: PQFN8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 3.1W; PQFN8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 34A
Power dissipation: 3.1W
Case: PQFN8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH7934TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH8201TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 324A; 156W; PQFN5X6
Mounting: SMD
Case: PQFN5X6
Kind of package: reel
Power dissipation: 156W
Drain current: 324A
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 25V
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 324A; 156W; PQFN5X6
Mounting: SMD
Case: PQFN5X6
Kind of package: reel
Power dissipation: 156W
Drain current: 324A
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 25V
кількість в упаковці: 4000 шт
товар відсутній
IRFH8303TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 280A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 280A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 280A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 280A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH8307TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6
Mounting: SMD
Drain-source voltage: 30V
Drain current: 42A
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN5X6
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6
Mounting: SMD
Drain-source voltage: 30V
Drain current: 42A
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN5X6
кількість в упаковці: 4000 шт
товар відсутній
IRFH8311TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFH8316TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFH8321TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.4W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.4W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFH8324TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 23A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 23A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 23A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 23A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH8325TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRFH8330TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; 3.3W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17A
Power dissipation: 3.3W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; 3.3W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17A
Power dissipation: 3.3W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній