Технічний опис IRFSL4310ZPBF Infineon / IR
Description: MOSFET N-CH 100V 120A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: TO-262, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V.
Інші пропозиції IRFSL4310ZPBF
Фото | Назва | Виробник | Інформація |
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IRFSL4310ZPBF | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262 Technology: HEXFET® Mounting: THT Case: TO262 Kind of package: tube Drain-source voltage: 100V Drain current: 127A Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IRFSL4310ZPBF | Виробник : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V |
товар відсутній |
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![]() |
IRFSL4310ZPBF | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262 Technology: HEXFET® Mounting: THT Case: TO262 Kind of package: tube Drain-source voltage: 100V Drain current: 127A Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Kind of channel: enhanced |
товар відсутній |