IPW60R031CFD7 INFINEON TECHNOLOGIES
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 962.23 грн |
2+ | 787.69 грн |
3+ | 744.33 грн |
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Технічний опис IPW60R031CFD7 INFINEON TECHNOLOGIES
Description: 600V COOLMOS N-CHANNEL POWER MOS, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 63A (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 32.6A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.63mA, Supplier Device Package: PG-TO247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V.
Інші пропозиції IPW60R031CFD7 за ціною від 857.05 грн до 1154.67 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
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IPW60R031CFD7 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 40A Power dissipation: 278W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 141nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 7 шт: термін постачання 14-21 дні (днів) |
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IPW60R031CFD7 | Виробник : Infineon Technologies |
Description: 600V COOLMOS N-CHANNEL POWER MOS Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 32.6A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.63mA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V |
товар відсутній |
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IPW60R031CFD7 | Виробник : Infineon Technologies | MOSFET HIGH POWER_NEW |
товар відсутній |