IPZ40N04S5-8R4

IPZ40N04S5-8R4 INFINEON TECHNOLOGIES


IPZ40N04S5-8R4.pdf Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 34W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Mounting: SMD
Gate charge: 13.7nC
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 5000 шт
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Технічний опис IPZ40N04S5-8R4 INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8, Type of transistor: N-MOSFET, Technology: OptiMOS™ 5, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 40A, Power dissipation: 34W, Case: PG-TSDSON-8, Gate-source voltage: ±20V, On-state resistance: 9.9mΩ, Mounting: SMD, Gate charge: 13.7nC, Kind of channel: enhanced, Application: automotive industry, кількість в упаковці: 5000 шт.

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IPZ40N04S5-8R4 IPZ40N04S5-8R4 Виробник : INFINEON TECHNOLOGIES IPZ40N04S5-8R4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 34W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Mounting: SMD
Gate charge: 13.7nC
Kind of channel: enhanced
Application: automotive industry
товар відсутній