IPW65R310CFDFKSA1 ROCHESTER ELECTRONICS
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Description: ROCHESTER ELECTRONICS - IPW65R310CFDFKSA1 - IPW65R310 650V AND 700V COOLMOS N-CHANN
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
на замовлення 9448 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
211+ | 115.12 грн |
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Технічний опис IPW65R310CFDFKSA1 ROCHESTER ELECTRONICS
Description: MOSFET N-CH 650V 11.4A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc), Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V, Power Dissipation (Max): 104.2W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 440µA, Supplier Device Package: PG-TO247-3-1, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V.
Інші пропозиції IPW65R310CFDFKSA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IPW65R310CFDFKSA1 | Виробник : Infineon Technologies |
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товар відсутній |
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IPW65R310CFDFKSA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 11.4A Power dissipation: 104.2W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.31Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IPW65R310CFDFKSA1 | Виробник : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V Power Dissipation (Max): 104.2W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 440µA Supplier Device Package: PG-TO247-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
товар відсутній |
|
![]() |
IPW65R310CFDFKSA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 11.4A Power dissipation: 104.2W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.31Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
товар відсутній |